Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results ind...Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results indicate that total EL2 concentration radial distribution is W-shaped and net acceptor concentration radial distribution is sample-dependent, it can present a n shape, a A shape, or a W shape corresponding to different samples.展开更多
It has advantages of accuracy, rapidity and non-destruction that EL2 distribution in semi-insulating LECGaAs crystal has been measured by near infrared absorption method with a high spatial resolution. Now EL2defect e...It has advantages of accuracy, rapidity and non-destruction that EL2 distribution in semi-insulating LECGaAs crystal has been measured by near infrared absorption method with a high spatial resolution. Now EL2defect existed in all wafer is directly observed by 1 .0972 μm and 2 μm absorption curves obtained from a suc-cessive and automatical horizontal scan across the different bands parallelly ranged with tbe diameter of asemi-insulating GaAs wafer. Not only EL2 distribution across the wafer corresponding with that of dislocationdensities has been indicated but also the fine structure found.展开更多
Undoped semi-insulating (SI) LEC GaAs samples were investigated. The concentrations of ionized EL2and carbon acceptor were measured by multiple wavelength infrared absorption and local vibrational modeinfrared absorpt...Undoped semi-insulating (SI) LEC GaAs samples were investigated. The concentrations of ionized EL2and carbon acceptor were measured by multiple wavelength infrared absorption and local vibrational modeinfrared absorption methods. The results indicate that for the same sample the ionized EL2 concentration([EL2￣+]) is higher than the carbon acceptor concentration ([C]). The value of [EL2￣+]-[C] is of the order ofmagnitude of 10￣(15) cm￣(-3), which means that acceptors other than carbon exist with a concentration of10￣(15) cm￣(-3) in the samples. This is in conflict with the conventional 3-level compensation model. The radialdistribution of [EL2￣+] was investigated. The radial distribution of carbon acceptor does not present any regu-larity.展开更多
文摘Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results indicate that total EL2 concentration radial distribution is W-shaped and net acceptor concentration radial distribution is sample-dependent, it can present a n shape, a A shape, or a W shape corresponding to different samples.
文摘It has advantages of accuracy, rapidity and non-destruction that EL2 distribution in semi-insulating LECGaAs crystal has been measured by near infrared absorption method with a high spatial resolution. Now EL2defect existed in all wafer is directly observed by 1 .0972 μm and 2 μm absorption curves obtained from a suc-cessive and automatical horizontal scan across the different bands parallelly ranged with tbe diameter of asemi-insulating GaAs wafer. Not only EL2 distribution across the wafer corresponding with that of dislocationdensities has been indicated but also the fine structure found.
文摘Undoped semi-insulating (SI) LEC GaAs samples were investigated. The concentrations of ionized EL2and carbon acceptor were measured by multiple wavelength infrared absorption and local vibrational modeinfrared absorption methods. The results indicate that for the same sample the ionized EL2 concentration([EL2￣+]) is higher than the carbon acceptor concentration ([C]). The value of [EL2￣+]-[C] is of the order ofmagnitude of 10￣(15) cm￣(-3), which means that acceptors other than carbon exist with a concentration of10￣(15) cm￣(-3) in the samples. This is in conflict with the conventional 3-level compensation model. The radialdistribution of [EL2￣+] was investigated. The radial distribution of carbon acceptor does not present any regu-larity.
