In this paper, a new current expression based on both the direct currect （DC） characteristics of the A1GaN/GaN high election mobility transistor （HEMT） and the hyperbolic tangent function tanh is proposed, by whic...In this paper, a new current expression based on both the direct currect （DC） characteristics of the A1GaN/GaN high election mobility transistor （HEMT） and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the A1GaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of Ⅰ-Ⅴ, S-parameter, and radio frequency （RF） large-signal characteristics are compared for a self-developed on-wafer A1GaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-p-m wide （Such an A1GaN/GaN HEMT is denoted as A1GaN/GaN HEMT （10 × 125 μm））. The improved large signal model simulates the Ⅰ-Ⅴ characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61334002)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(Grant No.ZHD201206)the Program for New Century Excellent Talents in University(Grant No.NCET-12-0915)
文摘In this paper, a new current expression based on both the direct currect （DC） characteristics of the A1GaN/GaN high election mobility transistor （HEMT） and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the A1GaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of Ⅰ-Ⅴ, S-parameter, and radio frequency （RF） large-signal characteristics are compared for a self-developed on-wafer A1GaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-p-m wide （Such an A1GaN/GaN HEMT is denoted as A1GaN/GaN HEMT （10 × 125 μm））. The improved large signal model simulates the Ⅰ-Ⅴ characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data.
