Irradiation experiments on p-Ga N gate high-electron-mobility transistors(HEMTs) were conducted using neutrons at Back-streaming White Neutron(Back-n) facility at the China Spallation Neutron Source(CSNS).Two groups o...Irradiation experiments on p-Ga N gate high-electron-mobility transistors(HEMTs) were conducted using neutrons at Back-streaming White Neutron(Back-n) facility at the China Spallation Neutron Source(CSNS).Two groups of devices were float-biased,while one group was ON-biased.Post-irradiation analysis revealed that the electrical performance of the devices exhibited progressive degradation with increasing Back-n fluence,with the ON-biased group demonstrating the most pronounced deterioration.This degradation was primarily characterized by a negative shift in the threshold voltage,a significant increase in reverse gate leakage current,and a slight reduction in forward gate leakage.Further analysis of the gate leakage current and capacitance-voltage characteristics indicated an elevated concentration of two-dimensional electron gas(2DEG),attributed to donor-type defects introduced within the barrier layer by Back-n irradiation.These defects act as hole traps,converting into fixed positive charges that deepen the quantum-well conduction band,thereby enhancing the 2DEG density.Additionally,through the trap-assisted tunneling mechanism,these defects serve as tunneling centers,increasing the probability of electron tunneling and consequently elevating the reverse gate leakage current.展开更多
Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradi...Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.展开更多
This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the Chi...This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.展开更多
This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deepsubmicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, includi...This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deepsubmicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductanee, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co- 60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed.展开更多
Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the reg...Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.展开更多
Neutron radiation experiments of optocouplers at back-streaming white neutrons(back-n)in China Spallation Neutron Source(CSNS)are presented.The displacement damages induced by neutron radiation are analyzed.The perfor...Neutron radiation experiments of optocouplers at back-streaming white neutrons(back-n)in China Spallation Neutron Source(CSNS)are presented.The displacement damages induced by neutron radiation are analyzed.The performance degradations of two types of optocouplers are compared.The degradations of current transfer ratio(CTR)are analyzed,and the mechanisms induced by radiation are also demonstrated.With the increase of the accumulated fluence,the CTR is degrading linearly with neutron fluence.The radiation hardening of optocouplers can be improved when the forward current is increased.Other parameters related to CTR degradation of optocouplers are also analyzed.展开更多
Owing to the unique characteristics of ultra-thin body and nanoscale sensitivity volume,MoS_(2)-based field-effect tran-sistors(FETs)are regarded as optimal components for radiation-hardened integrated circuits(ICs),w...Owing to the unique characteristics of ultra-thin body and nanoscale sensitivity volume,MoS_(2)-based field-effect tran-sistors(FETs)are regarded as optimal components for radiation-hardened integrated circuits(ICs),which is exponentially grow-ing demanded especially in the fields of space exploration and the nuclear industry.Many researches on MoS_(2)-based radiation tolerance electronics focused on the total ionizing dose(TID)effect,while few works concerned the displacement damage(DD)effects,which is more challenging to measure and more crucial for practical applications.We first conducted measurements to assess the DD effects of MoS_(2) FETs,and then presented the stopping and ranges of ions in matter(SRIM)simulation to analysis the DD degradation mechanism in MoS_(2) electronics.The monolayer MoS_(2)-based FETs exhibit DD radiation tolerance up to 1.56×1013 MeV/g,which is at least two order of magnitude than that in conventional radiation hardened ICs.The exceptional DD radiation tolerance will significantly enhance the deployment of MoS_(2) integrated circuits in environments characterized by high-energy solar and cosmic radiation exposure.展开更多
The characteristic degradations in silicon NPN bipolar junction transistors（BJTs） of type 3DD155 are examined under the irradiations of 25-MeV carbon（C）,40-MeV silicon（Si）,and 40-MeV chlorine（Cl） ions respecti...The characteristic degradations in silicon NPN bipolar junction transistors（BJTs） of type 3DD155 are examined under the irradiations of 25-MeV carbon（C）,40-MeV silicon（Si）,and 40-MeV chlorine（Cl） ions respectively.Different electrical parameters are measured in-situ during the exposure of heavy ions.The experimental data shows that the changes in the reciprocal of the gain variation（（1/β）） of 3DD155 transistors irradiated respectively by 25-MeV C,40-MeV Si,and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence.The（1/β） of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence,a little smaller when the device is irradiated by 40-MeV Si ions,and smallest in the case of the 40-MeV Cl ions irradiation.The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.展开更多
Structure damage identification and alarming of long-span bridge were conducted with three-dimensional dynamic displacement data collected by GPS subsystem of health monitoring system on Runyang Suspension Bridge.Firs...Structure damage identification and alarming of long-span bridge were conducted with three-dimensional dynamic displacement data collected by GPS subsystem of health monitoring system on Runyang Suspension Bridge.First,the effects of temperature on the main girder spatial position coordinates were analyzed from the transverse,longitudinal and vertical directions of bridge,and the correlation regression models were built between temperature and the position coordinates of main girder in the longitudinal and vertical directions;then the alarming indices of coordinate residuals were conducted,and the mean-value control chart was applied to making statistical pattern identification for abnormal changes of girder dynamic coordinates;and finally,the structural damage alarming method of main girder was established.Analysis results show that temperature has remarkable correlation with position coordinates in the longitudinal and vertical directions of bridge,and has weak correlation with the transverse coordinates.The 3%abnormal change of the longitudinal coordinates and 5%abnormal change of the vertical ones caused by structural damage are respectively identified by the mean-value control chart method based on GPS dynamic monitoring data and hence the structural abnormalities state identification and damage alarming for main girder of long-span suspension bridge can be realized in multiple directions.展开更多
Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work comb...Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.展开更多
An investigation of ionization and displacement damage in silicon NPN bipolar junction transistors （BJTs） is presented. The transistors were irradiated separately with 90-keV electrons, 3-MeV protons and 40-MeV Br i...An investigation of ionization and displacement damage in silicon NPN bipolar junction transistors （BJTs） is presented. The transistors were irradiated separately with 90-keV electrons, 3-MeV protons and 40-MeV Br ions, Key parameters were measured in-situ and the change in current gain of the NPN BJTS was obtained at a fixed collector current （Ic=1 mA）. To characterise the radiation damage of NPN BJTs, the ionizing dose Di and displacement dose Dd as functions of chip depth in the NPN BJTs were calculated using the SRIM and Geant4 code for protons, electrons and Br ions, respectively. Based on the discussion of the radiation damage equation for current gain, it is clear that the current gain degradation of the NPN BJTs is sensitive to both ionization and displacement damage. The degradation mechanism of the current gain is related to the ratio of Dd/（Dd -k Di） in the sensitive region given by charged particles. The irradiation particles leading to lower Dd/（Dd ＋ Di） within the same chip depth at a given total dose would mainly produce ionization damage to the NPN BJTs. On the other hand, the charged particles causing larger Dd/（Dd ＋ Di） at a given total dose would tend to generate displacement damage to the NPN BJTs. The Messenger-Spratt equation could be used to describe the experimental data for the latter case.展开更多
The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively....The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.展开更多
The characteristic degradations in a silicon NPN bipolar junction transistor （BJT） of 3DG142 type are examined under irradiation with 40-MeV chlorine （C1） ions under forward, grounded, and reverse bias conditions,...The characteristic degradations in a silicon NPN bipolar junction transistor （BJT） of 3DG142 type are examined under irradiation with 40-MeV chlorine （C1） ions under forward, grounded, and reverse bias conditions, respectively. Different electrical parameters are in-situ measured during the exposure under each bias condition. From the experimental data, a larger variation of base current （IB） is observed after irradiation at a given value of base-emitter voJtage （VBE）, while the collector current is slightly affected by irradiation at a given VBE. The gain degradation is affected mostly by the behaviour of the base current. From the experimental data, the variation of current gain in the case of forward bias is much smaller than that in the other conditions. Moreover, for 3DG142 BJT, the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence, while at high fluence, the gain degradation in the reverse bias case becomes smaller than that in the grounded case.展开更多
Many multicomponent concentrated solid solution alloys(CSAs),including high-entropy alloys(HEAs),exhibit improved radiation resistance and enhanced structural stability in harsh environments.To study and assess irradi...Many multicomponent concentrated solid solution alloys(CSAs),including high-entropy alloys(HEAs),exhibit improved radiation resistance and enhanced structural stability in harsh environments.To study and assess irradiation resistance of nuclear materials,energetic ion and electron beams are commonly used to create displacement damage.Moreover,charged particles of ions,electrons,and positrons are unique tools to create and characterize radiation effects.Ion beam analysis(e.g.,Rutherford backscattering spectrometry,nuclear reaction analysis,and time-of-flight elastic recoil detection analysis),electron microscopy techniques(e.g.,transmission or scanning electron microscopy,and electron diffraction),and positron annihilation spectroscopy have been applied to characterize irradiated CSAs or HEAs to understand defect formation and evolution together with chemical and microstructural information.Their distinctive analyzing power and some perspectives in these techniques are reviewed.In developing structural alloys desirable for applications in advanced reactors,neutron exposure is a critical test but the limitation in achievable high damage levels is,however,a bottleneck.Ion irradiation is often used as a surrogate for neutron irradiation,and the associated reduced transmutations and higher displacements per atom(dpa)rates are desirable for materials research.Nevertheless,cautions need to be taken when relying on ion irradiation results for reactor evaluations.Literature on differences between ions and neutrons is briefly reviewed.In addition,the links to bridge the current advances on fundamental understandings to reactor applications are discussed to lay the groundwork between neutrons and ions for radiation effects studies.展开更多
In this paper,high-energy Ne ions were used to irradiate Zr_(63.5)Cu_(23)Al_(9)Fe_(4.5) metallic glass(MG)and crystalline W to investigate their difference in mechanical response after irradiation.The results showed t...In this paper,high-energy Ne ions were used to irradiate Zr_(63.5)Cu_(23)Al_(9)Fe_(4.5) metallic glass(MG)and crystalline W to investigate their difference in mechanical response after irradiation.The results showed that with the irradiation dose increased,the tensile micro-strain increased,nano-hardness increased from 7.11 GPa to 7.90 GPa and 8.62 GPa,Young’s modulus increased,and H3/E2 increased which indicating that the plastic deformability decreased in crystalline W.Under the same irradiation conditions,the Zr_(63.5)Cu_(23)Al_(9)Fe_(4.5) MG still maintained the amorphous structure and became more disordered despite the longer range and stronger displacement damage of Ne ions in Zr_(63.5)Cu_(23)Al_(9)Fe_(4.5) MG than in crystalline W.Unlike the irradiation hardening and embrittlement behavior of crystalline W,Zr_(63.5)Cu_(23)Al_(9)Fe_(4.5) MG showed the gradual decrease in hardness from 6.02 GPa to 5.89 GPa and 5.50 GPa,the decrease in modulus and the increase in plastic deformability with the increasing dose.Possibly,the irradiation softening and toughening phenomenon of Zr_(63.5)Cu_(23)Al_(9)Fe_(4.5) MG could provide new ideas for the design of nuclear materials.展开更多
The radiation effects of the metal-oxide-semiconductor （MOS） and the bipolar devices are characterised using 8 MeV protons, 60 MeV Br ions and 1 MeV electrons. Key parameters are measured in-situ and compared for th...The radiation effects of the metal-oxide-semiconductor （MOS） and the bipolar devices are characterised using 8 MeV protons, 60 MeV Br ions and 1 MeV electrons. Key parameters are measured in-situ and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contributions to MOS and bipolar devices. The irradiation particles, which cause a larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.展开更多
In our previous studies, we have proved that neutron irradiation can decrease the single event latch-up （SEL） sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset （MCU） is the para...In our previous studies, we have proved that neutron irradiation can decrease the single event latch-up （SEL） sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset （MCU） is the parasitic bipolar amplification, it bring us to study the impact of neutron irradiation on the SRAM＇s MCU sensitivity. After the neutron experiment, we test the devices＇ function and electrical parameters. Then, we use the heavy ion fluence to examine the changes on the devices＇ MCU sensitivity pre- and post-neutron-irradiation. Unfortunately, neutron irradiation makes the MCU phenomenon worse. Finally, we use the electric static discharge （ESD） testing technology to deduce the experimental results and find that the changes on the WPM region take the lead rather than the changes on the parasitic bipolar amplification for the 90 nm process.展开更多
The displacement damage dose methodology for analysing and modelling the performance of triple-junction InGaP2/GaAs/Ge solar cells in an electron radiation environment is presented. Degradations at different electron ...The displacement damage dose methodology for analysing and modelling the performance of triple-junction InGaP2/GaAs/Ge solar cells in an electron radiation environment is presented. Degradations at different electron energies are correlated with displacement damage dose （Dd）. One particular electron radiation environment, relative to a geosynchronous earth orbit （GEO）, is chosen to calculate the total Dd behind the different thicknesses coverglasses to predict the performance degradation at the end of the 15-year mission.展开更多
This study investigates the damage mechanisms of triple-junction GaAs solar cells under 10MeV high-energy electron irradiation,addressing limitations of previous low-energy(e.g.,1 MeV)electron studies.Experimental res...This study investigates the damage mechanisms of triple-junction GaAs solar cells under 10MeV high-energy electron irradiation,addressing limitations of previous low-energy(e.g.,1 MeV)electron studies.Experimental results show that with increasing electron fluence,the electrical performance degrades significantly,with open-circuit voltage decreasing more markedly than short-circuit current.Combined CASINO and TCAD simulations reveal higher non-ionizing energy deposition and more severe displacement damage in the GaAs middle subcell.Analysis of recombination rates and energy band structure indicates an evolution of defect types from simple point defects to complex clusters under high-energy irradiation,leading to increase in recombination rate and severe band distortion.These findings provide deeper insights into the damage mechanism of high-energy electrons and lay a theoretical foundation for radiation-hardened design and lifetime assessment of space solar cells.展开更多
The effects of the physical damages induced by heavy ion irradiation on the performance of partiallydepleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are o...The effects of the physical damages induced by heavy ion irradiation on the performance of partiallydepleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance,and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos.12120101005,U2030104,12175174,11975174,and 12105229)State Key Laboratory Foundation of Laser Interaction with Matter (Grant Nos.SKLLIM1807 and SKLLIM2106)+1 种基金the Postdoctoral Fellowship Program of CPSF (Grant No.GZC20241372)National Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No.NKLIPR2419)。
文摘Irradiation experiments on p-Ga N gate high-electron-mobility transistors(HEMTs) were conducted using neutrons at Back-streaming White Neutron(Back-n) facility at the China Spallation Neutron Source(CSNS).Two groups of devices were float-biased,while one group was ON-biased.Post-irradiation analysis revealed that the electrical performance of the devices exhibited progressive degradation with increasing Back-n fluence,with the ON-biased group demonstrating the most pronounced deterioration.This degradation was primarily characterized by a negative shift in the threshold voltage,a significant increase in reverse gate leakage current,and a slight reduction in forward gate leakage.Further analysis of the gate leakage current and capacitance-voltage characteristics indicated an elevated concentration of two-dimensional electron gas(2DEG),attributed to donor-type defects introduced within the barrier layer by Back-n irradiation.These defects act as hole traps,converting into fixed positive charges that deepen the quantum-well conduction band,thereby enhancing the 2DEG density.Additionally,through the trap-assisted tunneling mechanism,these defects serve as tunneling centers,increasing the probability of electron tunneling and consequently elevating the reverse gate leakage current.
基金Project supported by the Foundation of State Key Laboratory of China(Grant Nos.SKLIPR1903Z,1803)the National Natural Science Foundation of China(Grant Nos.U2167208 and 11875223).
文摘Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.
基金supported by the Young Elite Scientists Sponsorship Program by CAST(No.YESS20210441)the National Natural Science Foundation of China(Nos.U2167208,11875223)。
文摘This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.
基金Project supported by the National Natural Science Foundation of China (Grants No. 60625403,60836004,60925015 and 90207004)the Major State Basic Research Development Program of China (973 Program) (Grant No. 2006CB302701)
文摘This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deepsubmicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductanee, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co- 60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed.
文摘Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11875223,11805155,and 11690043)the Chinese Academy of Sciences Strategic Pilot Science and Technology Project(Grant No.XDA15015000)+1 种基金the Innovation Foundation of Radiation Application,China(Grant No.KFZC2018040201)the Foundation of State Key Laboratory of China(Grant Nos.SKLIPR1803 and 1903Z)
文摘Neutron radiation experiments of optocouplers at back-streaming white neutrons(back-n)in China Spallation Neutron Source(CSNS)are presented.The displacement damages induced by neutron radiation are analyzed.The performance degradations of two types of optocouplers are compared.The degradations of current transfer ratio(CTR)are analyzed,and the mechanisms induced by radiation are also demonstrated.With the increase of the accumulated fluence,the CTR is degrading linearly with neutron fluence.The radiation hardening of optocouplers can be improved when the forward current is increased.Other parameters related to CTR degradation of optocouplers are also analyzed.
基金supported by the National Natural Science Foundation of China (Grant No.62301247)the Fundamental Research Funds for the Central Universities (Grant No.2024300427)+4 种基金the Natural Science Foundation of Jiangsu Province (Grant No.BK20230778)the Key Research and Development Program of Jiangsu Province (Grant No.BK20232009)the Innovation Leading Talent Foundation of Suzhou (Grant No.ZXL2023164)Guangdong Major Project of Basic Research (Grant No.2021B0301030003)Jihua Laboratory (Project No.X210141TL210).
文摘Owing to the unique characteristics of ultra-thin body and nanoscale sensitivity volume,MoS_(2)-based field-effect tran-sistors(FETs)are regarded as optimal components for radiation-hardened integrated circuits(ICs),which is exponentially grow-ing demanded especially in the fields of space exploration and the nuclear industry.Many researches on MoS_(2)-based radiation tolerance electronics focused on the total ionizing dose(TID)effect,while few works concerned the displacement damage(DD)effects,which is more challenging to measure and more crucial for practical applications.We first conducted measurements to assess the DD effects of MoS_(2) FETs,and then presented the stopping and ranges of ions in matter(SRIM)simulation to analysis the DD degradation mechanism in MoS_(2) electronics.The monolayer MoS_(2)-based FETs exhibit DD radiation tolerance up to 1.56×1013 MeV/g,which is at least two order of magnitude than that in conventional radiation hardened ICs.The exceptional DD radiation tolerance will significantly enhance the deployment of MoS_(2) integrated circuits in environments characterized by high-energy solar and cosmic radiation exposure.
基金Project supported by the Fundamental Research Funds for the Central Universities (Grant No. HIT.KLOF.2010003)the National Basis Research Program of China (Grant No. 51320)
文摘The characteristic degradations in silicon NPN bipolar junction transistors（BJTs） of type 3DD155 are examined under the irradiations of 25-MeV carbon（C）,40-MeV silicon（Si）,and 40-MeV chlorine（Cl） ions respectively.Different electrical parameters are measured in-situ during the exposure of heavy ions.The experimental data shows that the changes in the reciprocal of the gain variation（（1/β）） of 3DD155 transistors irradiated respectively by 25-MeV C,40-MeV Si,and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence.The（1/β） of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence,a little smaller when the device is irradiated by 40-MeV Si ions,and smallest in the case of the 40-MeV Cl ions irradiation.The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.
基金Project(51078080)supported by the National Natural Science Foundation of ChinaProject(20130969010)supported by Aeronautical Science Foundation of China+1 种基金Project(2011Y03-6)supported by Traffic Transportation Technology Project of Jiangsu Province,ChinaProject(BK2012562)supported by the Natural Science Foundation of Jiangsu Province,China
文摘Structure damage identification and alarming of long-span bridge were conducted with three-dimensional dynamic displacement data collected by GPS subsystem of health monitoring system on Runyang Suspension Bridge.First,the effects of temperature on the main girder spatial position coordinates were analyzed from the transverse,longitudinal and vertical directions of bridge,and the correlation regression models were built between temperature and the position coordinates of main girder in the longitudinal and vertical directions;then the alarming indices of coordinate residuals were conducted,and the mean-value control chart was applied to making statistical pattern identification for abnormal changes of girder dynamic coordinates;and finally,the structural damage alarming method of main girder was established.Analysis results show that temperature has remarkable correlation with position coordinates in the longitudinal and vertical directions of bridge,and has weak correlation with the transverse coordinates.The 3%abnormal change of the longitudinal coordinates and 5%abnormal change of the vertical ones caused by structural damage are respectively identified by the mean-value control chart method based on GPS dynamic monitoring data and hence the structural abnormalities state identification and damage alarming for main girder of long-span suspension bridge can be realized in multiple directions.
基金This work was financially supported by the National Natural Science Foundation of China(No.61704189)the Common Information System Equipment Pre-Research Special Technology Project(31513020404-2)Youth Innovation Promotion Association of Chinese Academy of Sciences and the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,and the Key Research Program of Frontier Sciences,CAS(Grant ZDBS-LY-JSC015)。
文摘Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.
基金Project supported by the National Basic Research Program of China (Grant No.61343)
文摘An investigation of ionization and displacement damage in silicon NPN bipolar junction transistors （BJTs） is presented. The transistors were irradiated separately with 90-keV electrons, 3-MeV protons and 40-MeV Br ions, Key parameters were measured in-situ and the change in current gain of the NPN BJTS was obtained at a fixed collector current （Ic=1 mA）. To characterise the radiation damage of NPN BJTs, the ionizing dose Di and displacement dose Dd as functions of chip depth in the NPN BJTs were calculated using the SRIM and Geant4 code for protons, electrons and Br ions, respectively. Based on the discussion of the radiation damage equation for current gain, it is clear that the current gain degradation of the NPN BJTs is sensitive to both ionization and displacement damage. The degradation mechanism of the current gain is related to the ratio of Dd/（Dd -k Di） in the sensitive region given by charged particles. The irradiation particles leading to lower Dd/（Dd ＋ Di） within the same chip depth at a given total dose would mainly produce ionization damage to the NPN BJTs. On the other hand, the charged particles causing larger Dd/（Dd ＋ Di） at a given total dose would tend to generate displacement damage to the NPN BJTs. The Messenger-Spratt equation could be used to describe the experimental data for the latter case.
基金supported by the National Natural Science Foundation of China(Grant No.60976013)
文摘The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.
基金Project supported by the Fundamental Research Funds for the Central Universities,China (Grant No. HIT.KLOF.2010003)the National Basis Research Foundation of China (Grant No. 51320)
文摘The characteristic degradations in a silicon NPN bipolar junction transistor （BJT） of 3DG142 type are examined under irradiation with 40-MeV chlorine （C1） ions under forward, grounded, and reverse bias conditions, respectively. Different electrical parameters are in-situ measured during the exposure under each bias condition. From the experimental data, a larger variation of base current （IB） is observed after irradiation at a given value of base-emitter voJtage （VBE）, while the collector current is slightly affected by irradiation at a given VBE. The gain degradation is affected mostly by the behaviour of the base current. From the experimental data, the variation of current gain in the case of forward bias is much smaller than that in the other conditions. Moreover, for 3DG142 BJT, the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence, while at high fluence, the gain degradation in the reverse bias case becomes smaller than that in the grounded case.
基金supported as part of Energy Dissipation to Defect Evolution(EDDE)an Energy Frontier Research Center funded by the U.S.Department of Energy,Office of Science,Basic Energy Sciences,under contract number DE-AC05-00OR22725.
文摘Many multicomponent concentrated solid solution alloys(CSAs),including high-entropy alloys(HEAs),exhibit improved radiation resistance and enhanced structural stability in harsh environments.To study and assess irradiation resistance of nuclear materials,energetic ion and electron beams are commonly used to create displacement damage.Moreover,charged particles of ions,electrons,and positrons are unique tools to create and characterize radiation effects.Ion beam analysis(e.g.,Rutherford backscattering spectrometry,nuclear reaction analysis,and time-of-flight elastic recoil detection analysis),electron microscopy techniques(e.g.,transmission or scanning electron microscopy,and electron diffraction),and positron annihilation spectroscopy have been applied to characterize irradiated CSAs or HEAs to understand defect formation and evolution together with chemical and microstructural information.Their distinctive analyzing power and some perspectives in these techniques are reviewed.In developing structural alloys desirable for applications in advanced reactors,neutron exposure is a critical test but the limitation in achievable high damage levels is,however,a bottleneck.Ion irradiation is often used as a surrogate for neutron irradiation,and the associated reduced transmutations and higher displacements per atom(dpa)rates are desirable for materials research.Nevertheless,cautions need to be taken when relying on ion irradiation results for reactor evaluations.Literature on differences between ions and neutrons is briefly reviewed.In addition,the links to bridge the current advances on fundamental understandings to reactor applications are discussed to lay the groundwork between neutrons and ions for radiation effects studies.
基金supported by National Natural Science Foundation of China(Nos.12305224,U23B2099 and 11975065)the Natural Science Foundation of Liaoning Province(No.2021-BS-223)+1 种基金the Liaoning Provincial Department of Education Youth Fund Project(No.LJKQZ20222309)supports from the National Laboratory of Heavy-ion Research Facility(HIRFL)in the Institute of Modern Physics in Lanzhou,China.
文摘In this paper,high-energy Ne ions were used to irradiate Zr_(63.5)Cu_(23)Al_(9)Fe_(4.5) metallic glass(MG)and crystalline W to investigate their difference in mechanical response after irradiation.The results showed that with the irradiation dose increased,the tensile micro-strain increased,nano-hardness increased from 7.11 GPa to 7.90 GPa and 8.62 GPa,Young’s modulus increased,and H3/E2 increased which indicating that the plastic deformability decreased in crystalline W.Under the same irradiation conditions,the Zr_(63.5)Cu_(23)Al_(9)Fe_(4.5) MG still maintained the amorphous structure and became more disordered despite the longer range and stronger displacement damage of Ne ions in Zr_(63.5)Cu_(23)Al_(9)Fe_(4.5) MG than in crystalline W.Unlike the irradiation hardening and embrittlement behavior of crystalline W,Zr_(63.5)Cu_(23)Al_(9)Fe_(4.5) MG showed the gradual decrease in hardness from 6.02 GPa to 5.89 GPa and 5.50 GPa,the decrease in modulus and the increase in plastic deformability with the increasing dose.Possibly,the irradiation softening and toughening phenomenon of Zr_(63.5)Cu_(23)Al_(9)Fe_(4.5) MG could provide new ideas for the design of nuclear materials.
基金Project supported by the National Basis Research Program of China (Grant No. 61343)
文摘The radiation effects of the metal-oxide-semiconductor （MOS） and the bipolar devices are characterised using 8 MeV protons, 60 MeV Br ions and 1 MeV electrons. Key parameters are measured in-situ and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contributions to MOS and bipolar devices. The irradiation particles, which cause a larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.
文摘In our previous studies, we have proved that neutron irradiation can decrease the single event latch-up （SEL） sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset （MCU） is the parasitic bipolar amplification, it bring us to study the impact of neutron irradiation on the SRAM＇s MCU sensitivity. After the neutron experiment, we test the devices＇ function and electrical parameters. Then, we use the heavy ion fluence to examine the changes on the devices＇ MCU sensitivity pre- and post-neutron-irradiation. Unfortunately, neutron irradiation makes the MCU phenomenon worse. Finally, we use the electric static discharge （ESD） testing technology to deduce the experimental results and find that the changes on the WPM region take the lead rather than the changes on the parasitic bipolar amplification for the 90 nm process.
基金Project supported by the National Key Laboratory for Vacuum & Cryogenics Technology and Physics Foundation of China (Grant No 9140C5503060802)the National High Technology Development Program of China (Grant No 2007AA042431)
文摘The displacement damage dose methodology for analysing and modelling the performance of triple-junction InGaP2/GaAs/Ge solar cells in an electron radiation environment is presented. Degradations at different electron energies are correlated with displacement damage dose （Dd）. One particular electron radiation environment, relative to a geosynchronous earth orbit （GEO）, is chosen to calculate the total Dd behind the different thicknesses coverglasses to predict the performance degradation at the end of the 15-year mission.
基金supported by the Fund of National Innovation Center of Radiation Application(No.KFZC2023020401)Yangzhou Science and Technology Bureau,China(No.YZ2020263).
文摘This study investigates the damage mechanisms of triple-junction GaAs solar cells under 10MeV high-energy electron irradiation,addressing limitations of previous low-energy(e.g.,1 MeV)electron studies.Experimental results show that with increasing electron fluence,the electrical performance degrades significantly,with open-circuit voltage decreasing more markedly than short-circuit current.Combined CASINO and TCAD simulations reveal higher non-ionizing energy deposition and more severe displacement damage in the GaAs middle subcell.Analysis of recombination rates and energy band structure indicates an evolution of defect types from simple point defects to complex clusters under high-energy irradiation,leading to increase in recombination rate and severe band distortion.These findings provide deeper insights into the damage mechanism of high-energy electrons and lay a theoretical foundation for radiation-hardened design and lifetime assessment of space solar cells.
文摘The effects of the physical damages induced by heavy ion irradiation on the performance of partiallydepleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance,and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design.
