The III–V alloys and doping to tune the bandgap for solar cells and other optoelectronic devices has remained a hot topic of research for the last few decades.In the present article,the bandgap tuning and its influen...The III–V alloys and doping to tune the bandgap for solar cells and other optoelectronic devices has remained a hot topic of research for the last few decades.In the present article,the bandgap tuning and its influence on optical properties of In1-xGaxN/P,where(x=0.0,0.25,0.50,0.75,and 1.0)alloys are comprehensively analyzed by density functional theory based on full-potential linearized augmented plane wave method(FP-LAPW)and modified Becke and Johnson potentials(TB-mBJ).The direct bandgaps turn from 0.7 eV to 3.44 eV,and 1.41 eV to 2.32 eV for In1-xGaxN/P alloys,which increases their potentials for optoelectronic devices.The optical properties are discussed such as dielectric constants,refraction,absorption,optical conductivity,and reflection.The light is polarized in the low energy region with minimum reflection.The absorption and optical conduction are maxima in the visible region,and they are shifted into the ultraviolet region by Ga doping.Moreover,static dielectric constant e1(0)is in line with the bandgap from Penn’s model.展开更多
Two-dimensional magnets have received increasing attention since Cr_2Ge_2Te_6 and CrI_3 were experimentally exfoliated and measured in 2017. Although layered ferromagnetic metals were demonstrated at room temperature,...Two-dimensional magnets have received increasing attention since Cr_2Ge_2Te_6 and CrI_3 were experimentally exfoliated and measured in 2017. Although layered ferromagnetic metals were demonstrated at room temperature, a layered ferromagnetic semiconductor with high Curie temperature(Tc) is yet to be unveiled. Here, we theoretically predicted a family of high Tcferromagnetic monolayers, namely MnNX and CrCX(X = Cl, Br and I; C = S, Se and Te). Their Tcvalues were predicted from over 100 K to near 500 K with Monte Carlo simulations using an anisotropic Heisenberg model. Eight members among them show semiconducting bandgaps varying from roughly 0.23 to 1.85 eV. These semiconducting monolayers also show extremely large anisotropy, i.e. ～10~1 for effective masses and ～10~2 for carrier mobilities, along the two in-plane lattice directions of these layers. Additional orbital anisotropy leads to a spin-locked linear dichroism, in different from previously known circular and linear dichroisms in layered materials.Together with the mobility anisotropy, it offers a spin-, dichroism-and mobility-anisotropy locking.These results manifest the potential of this 2D family for both fundamental research and high performance spin-dependent electronic and optoelectronic devices.展开更多
文摘The III–V alloys and doping to tune the bandgap for solar cells and other optoelectronic devices has remained a hot topic of research for the last few decades.In the present article,the bandgap tuning and its influence on optical properties of In1-xGaxN/P,where(x=0.0,0.25,0.50,0.75,and 1.0)alloys are comprehensively analyzed by density functional theory based on full-potential linearized augmented plane wave method(FP-LAPW)and modified Becke and Johnson potentials(TB-mBJ).The direct bandgaps turn from 0.7 eV to 3.44 eV,and 1.41 eV to 2.32 eV for In1-xGaxN/P alloys,which increases their potentials for optoelectronic devices.The optical properties are discussed such as dielectric constants,refraction,absorption,optical conductivity,and reflection.The light is polarized in the low energy region with minimum reflection.The absorption and optical conduction are maxima in the visible region,and they are shifted into the ultraviolet region by Ga doping.Moreover,static dielectric constant e1(0)is in line with the bandgap from Penn’s model.
基金supported by the National Natural Science Foundation of China(11274380,91433103,11622437 and 61674171)the Fundamental Research Funds for the Central Universities of China+2 种基金the Research Funds of Renmin University of China(16XNLQ01)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000)supported by the Outstanding Innovative Talents Cultivation Funded Programs 2017 of Renmin University of China
文摘Two-dimensional magnets have received increasing attention since Cr_2Ge_2Te_6 and CrI_3 were experimentally exfoliated and measured in 2017. Although layered ferromagnetic metals were demonstrated at room temperature, a layered ferromagnetic semiconductor with high Curie temperature(Tc) is yet to be unveiled. Here, we theoretically predicted a family of high Tcferromagnetic monolayers, namely MnNX and CrCX(X = Cl, Br and I; C = S, Se and Te). Their Tcvalues were predicted from over 100 K to near 500 K with Monte Carlo simulations using an anisotropic Heisenberg model. Eight members among them show semiconducting bandgaps varying from roughly 0.23 to 1.85 eV. These semiconducting monolayers also show extremely large anisotropy, i.e. ～10~1 for effective masses and ～10~2 for carrier mobilities, along the two in-plane lattice directions of these layers. Additional orbital anisotropy leads to a spin-locked linear dichroism, in different from previously known circular and linear dichroisms in layered materials.Together with the mobility anisotropy, it offers a spin-, dichroism-and mobility-anisotropy locking.These results manifest the potential of this 2D family for both fundamental research and high performance spin-dependent electronic and optoelectronic devices.
