In this work, the near-eutectic Nb-24Ti-15Si-4Cr-2Al-2Hf（at%） alloy was directionally solidified at 1900 ℃ with withdrawal rates of 6, 18, 36, 50 mm·min^-1 and then heat-treated at 1450 ℃ for 12 h. The micros...In this work, the near-eutectic Nb-24Ti-15Si-4Cr-2Al-2Hf（at%） alloy was directionally solidified at 1900 ℃ with withdrawal rates of 6, 18, 36, 50 mm·min^-1 and then heat-treated at 1450 ℃ for 12 h. The microstructure evolution was investigated. The results show that the microstructure of the directionally solidified（DS） alloy is composed of Nbss＋Nb5Si3 eutectics within the whole withdrawal rate range, while the variation of rates makes a great difference on the solidification routes,the morphology and size of Nb_（ss）＋Nb_5Si_3 eutectic cells.With the increase in withdrawal rates, the petaloid Nbss＋Nb5Si3 eutectic cells transform into granular morphology. After the heat treatment, a mesh structure Nbssis formed gradually which isolates the Nb5Si3, and the phase boundaries become smoother in order to reduce the interfacial energy. Moreover, two kinds of Nb5Si3 exist in the heat-treated（HT） samples identified by crystal form and element composition, which are supposed as α-Nb5Si3 and γ-Nb5Si3, respectively. This study exhibits significant merits in guiding the optimization of Nb-Si-based alloys＇ mechanical properties.展开更多
Al-Si eutectic growth mechanism was investigated in a directionally-solidified AI-1 3 wt% Si alloy with different strontium （Sr） and magnesium （Mg） additions, growth velocities and temperature gradients. Macro- an...Al-Si eutectic growth mechanism was investigated in a directionally-solidified AI-1 3 wt% Si alloy with different strontium （Sr） and magnesium （Mg） additions, growth velocities and temperature gradients. Macro- and micro- scale metallographic analyses revealed that addition level of Sr and Mg, temperature gradient and growth velocity are important factors affecting stability of solidifying AI-Si eutectic front and the final morphology of eutectic grains in the solidified A1-13 wt% Si alloys. By varying （tailoring） these factors, a variety of eutectic grain structures and morphologies such as planar front, cellular structure, a mix of cellular and columnar, or equiaxed dendrites, can be obtained. Increasing temperature gradient, reducing growth velocity, or decreasing Sr and Mg contents is beneficial to stabilizing planar growth front of eutectic grains, which is qualitatively in accordance with constitutional supercooling criterion for binary eutectic growth. In contrast, adding more Sr and Mg, increasing growth velocity, or decreasing temperature gradient produces large constitutional supercooling, leading to columnar-equiaxed transition （CET） of eutectic structure, which can be interpreted on the basis of Hunt＇s Model. It is also found that both solute concentration and solidification variables have significant impact not only on eutectic growth, but also on gas porosity formation.展开更多
The magnetic property of soft magnetic metals and alloys depends strongly on the crystallo-graphic orientation. In automated equipment for orientation research, the intensity for drawing up the pole figure is measured...The magnetic property of soft magnetic metals and alloys depends strongly on the crystallo-graphic orientation. In automated equipment for orientation research, the intensity for drawing up the pole figure is measured in detail. The present research shows that the accurate pole figure can be drawn up without measuring concretely the intensity. For directional Si steel sheet the measuring step may be 4～5 degrees. In this paper the experimental equation for defo-cusing correction was derived from the experimental data in different specimens with random orientation.展开更多
Integrally directional solidification of an Nb-Ti-Si based ultrahigh temperature alloy was performed in an ultrahigh temperature and high thermal gradient furnace with the use of ceramic crucibles. The microstructural...Integrally directional solidification of an Nb-Ti-Si based ultrahigh temperature alloy was performed in an ultrahigh temperature and high thermal gradient furnace with the use of ceramic crucibles. The microstructural evolution with the withdrawing rate increasing during directional solidification was revealed. The integrally directionally solidified microstructure was composed of couple grown lamellar (Nbss+(Nb,X)5Si3) eutectic colonies and a few hexagonally cross-sectioned (Nb,X)5Si3 columns (X represents Ti and Hf elements). All the directionally solidified microstructure was straightly aligned along the longitudinal axis of the specimens. With increasing of the withdrawing rate, the average diameter of the eutectic cells and inter lamella spacings in the eutectic cell decreased. The near-planar solid/liquid interface appeared when the withdrawing rate was 1μm/s, and the cellular solid/liquid interface formed when the withdrawing rate was 5 μm/s.展开更多
The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantu...The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.展开更多
It is well known that femtosecond laser pulses can easily spontaneously induce deep-subwavelength periodic surface structures on transparent dielectrics but not on non-transparent semiconductors.Nevertheless,in this s...It is well known that femtosecond laser pulses can easily spontaneously induce deep-subwavelength periodic surface structures on transparent dielectrics but not on non-transparent semiconductors.Nevertheless,in this study,we demonstrate that using high-numerical-aperture 800 nm femtosecond laser direct writing with controlled pulse energy and scanning speed in the near-damage-threshold regime,polarization-dependent deep-subwavelength single grooves with linewidths of~180 nm can be controllably prepared on Si.Generally,the single-groove linewidth increases slightly with increase in the pulse energy and decrease in the scanning speed,whereas the single-groove depth significantly increases from~300 nm to~600 nm with decrease in the scanning speed,or even to over 1μm with multi-processing,indicating the characteristics of transverse clamping and longitudinal growth of such deep-subwavelength single grooves.Energy dispersive spectroscopy composition analysis of the near-groove region confirms that single-groove formation tends to be an ultrafast,non-thermal ablation process,and the oxidized deposits near the grooves are easy to clean up.Furthermore,the results,showing both the strong dependence of groove orientation on laser polarization and the occurrence of double-groove structures due to the interference of pre-formed orthogonal grooves,indicate that the extraordinary field enhancement of strong polarization sensitivity in the deep-subwavelength groove plays an important role in single-groove growth with high stability and collimation.展开更多
Sialon/ Si C m ultiphase refractory w as directly synthesized using cheap clay , Si C particlesand proper ad ditives . The new synthesizing process is si m ple an d of low cost . The synthesizedm aterial has good ...Sialon/ Si C m ultiphase refractory w as directly synthesized using cheap clay , Si C particlesand proper ad ditives . The new synthesizing process is si m ple an d of low cost . The synthesizedm aterial has good roo m tem perature m echanical properties and ther m al shock resistance . Thisw ork has provided the experi mental basis for the ap plication of high property an d cheap Sialon/ Si C m ultiphase refractories .展开更多
The formation of a special Si-rich layer on the periphery of Al-Si eutectic alloy specimen during directional solidification in rotary electromagnetic field has been investigated.This layer seems due to the migration ...The formation of a special Si-rich layer on the periphery of Al-Si eutectic alloy specimen during directional solidification in rotary electromagnetic field has been investigated.This layer seems due to the migration of some Si grains onto the crucible wall,then stagnating and coarsening further.展开更多
Pulsed Nd:YAG laser was used to irradiate Si substrate immersed in AgNO3 ethylene glycol solution to deposit Ag films along the lines scanned by laser on the substrate, which is a photo-thermal decomposing process. Th...Pulsed Nd:YAG laser was used to irradiate Si substrate immersed in AgNO3 ethylene glycol solution to deposit Ag films along the lines scanned by laser on the substrate, which is a photo-thermal decomposing process. The decomposed Ag atoms congregate and form polycrystalline Ag particles. The Ag concentration changes greatly with the total laser energyA absorbed by substrate. Transmission electron microscopy (TEM) observation shows the Ag particles are inlaid in the Si substrate. Auger electron spectrum (AES) shows that the Ag concentration decreases with the increase of the sputtering depth, and there is no oxygen element on the surface of the deposited Ag films.展开更多
SiCp/Al2O3-Al composites were synthesized by means of direct metal oxidation method. The composition and microstructures of the composites were investigated using X-ray diffraction （XRD）, scanning electron microsco...SiCp/Al2O3-Al composites were synthesized by means of direct metal oxidation method. The composition and microstructures of the composites were investigated using X-ray diffraction （XRD）, scanning electron microscopy （SEM） and metallurgical microscope. The effects of technical parameters on the properties of the product were analyzed. The results indicate that the composite possesses a dense microstructure, composed of three interpenetrated phases. Of them, SiO2 layer prohibits the powdering of the composites; Mg promotes the wetting and infiltration of the system and Si restricts the interfacial reaction while improving the wetting ability between reinforcement and matrix.展开更多
基金financially supported by the National Natural Science Foundation of China (No.51101005)
文摘In this work, the near-eutectic Nb-24Ti-15Si-4Cr-2Al-2Hf（at%） alloy was directionally solidified at 1900 ℃ with withdrawal rates of 6, 18, 36, 50 mm·min^-1 and then heat-treated at 1450 ℃ for 12 h. The microstructure evolution was investigated. The results show that the microstructure of the directionally solidified（DS） alloy is composed of Nbss＋Nb5Si3 eutectics within the whole withdrawal rate range, while the variation of rates makes a great difference on the solidification routes,the morphology and size of Nb_（ss）＋Nb_5Si_3 eutectic cells.With the increase in withdrawal rates, the petaloid Nbss＋Nb5Si3 eutectic cells transform into granular morphology. After the heat treatment, a mesh structure Nbssis formed gradually which isolates the Nb5Si3, and the phase boundaries become smoother in order to reduce the interfacial energy. Moreover, two kinds of Nb5Si3 exist in the heat-treated（HT） samples identified by crystal form and element composition, which are supposed as α-Nb5Si3 and γ-Nb5Si3, respectively. This study exhibits significant merits in guiding the optimization of Nb-Si-based alloys＇ mechanical properties.
基金financially supported by the National Natural Science Foundation of China(No.50771031)GM Research Foundation(No.GM-RP-07-211)
文摘Al-Si eutectic growth mechanism was investigated in a directionally-solidified AI-1 3 wt% Si alloy with different strontium （Sr） and magnesium （Mg） additions, growth velocities and temperature gradients. Macro- and micro- scale metallographic analyses revealed that addition level of Sr and Mg, temperature gradient and growth velocity are important factors affecting stability of solidifying AI-Si eutectic front and the final morphology of eutectic grains in the solidified A1-13 wt% Si alloys. By varying （tailoring） these factors, a variety of eutectic grain structures and morphologies such as planar front, cellular structure, a mix of cellular and columnar, or equiaxed dendrites, can be obtained. Increasing temperature gradient, reducing growth velocity, or decreasing Sr and Mg contents is beneficial to stabilizing planar growth front of eutectic grains, which is qualitatively in accordance with constitutional supercooling criterion for binary eutectic growth. In contrast, adding more Sr and Mg, increasing growth velocity, or decreasing temperature gradient produces large constitutional supercooling, leading to columnar-equiaxed transition （CET） of eutectic structure, which can be interpreted on the basis of Hunt＇s Model. It is also found that both solute concentration and solidification variables have significant impact not only on eutectic growth, but also on gas porosity formation.
文摘The magnetic property of soft magnetic metals and alloys depends strongly on the crystallo-graphic orientation. In automated equipment for orientation research, the intensity for drawing up the pole figure is measured in detail. The present research shows that the accurate pole figure can be drawn up without measuring concretely the intensity. For directional Si steel sheet the measuring step may be 4～5 degrees. In this paper the experimental equation for defo-cusing correction was derived from the experimental data in different specimens with random orientation.
基金Supported by the National Natural Science Foundation of China (No 500671081) the Doctorate Foundation of Northwestern Polytechnical University (No CX200605)
文摘Integrally directional solidification of an Nb-Ti-Si based ultrahigh temperature alloy was performed in an ultrahigh temperature and high thermal gradient furnace with the use of ceramic crucibles. The microstructural evolution with the withdrawing rate increasing during directional solidification was revealed. The integrally directionally solidified microstructure was composed of couple grown lamellar (Nbss+(Nb,X)5Si3) eutectic colonies and a few hexagonally cross-sectioned (Nb,X)5Si3 columns (X represents Ti and Hf elements). All the directionally solidified microstructure was straightly aligned along the longitudinal axis of the specimens. With increasing of the withdrawing rate, the average diameter of the eutectic cells and inter lamella spacings in the eutectic cell decreased. The near-planar solid/liquid interface appeared when the withdrawing rate was 1μm/s, and the cellular solid/liquid interface formed when the withdrawing rate was 5 μm/s.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11434010,11574356 and 11504415the Funds from the Royal Society,the Defense Science Technology Laboratory and UK Engineering and Physics Research Council
文摘The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.
基金Project supported by the Natural Science Foundation of Guangdong Province (Grant No.2021A1515012335)the National Natural Science Foundation of China (Grant No.11274400)+2 种基金Pearl River S&T Nova Program of Guangzhou (Grant No.201506010059)State Key Laboratory of High Field Laser Physics (Shanghai Institute of Optics and Fine Mechanics)State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University)。
文摘It is well known that femtosecond laser pulses can easily spontaneously induce deep-subwavelength periodic surface structures on transparent dielectrics but not on non-transparent semiconductors.Nevertheless,in this study,we demonstrate that using high-numerical-aperture 800 nm femtosecond laser direct writing with controlled pulse energy and scanning speed in the near-damage-threshold regime,polarization-dependent deep-subwavelength single grooves with linewidths of~180 nm can be controllably prepared on Si.Generally,the single-groove linewidth increases slightly with increase in the pulse energy and decrease in the scanning speed,whereas the single-groove depth significantly increases from~300 nm to~600 nm with decrease in the scanning speed,or even to over 1μm with multi-processing,indicating the characteristics of transverse clamping and longitudinal growth of such deep-subwavelength single grooves.Energy dispersive spectroscopy composition analysis of the near-groove region confirms that single-groove formation tends to be an ultrafast,non-thermal ablation process,and the oxidized deposits near the grooves are easy to clean up.Furthermore,the results,showing both the strong dependence of groove orientation on laser polarization and the occurrence of double-groove structures due to the interference of pre-formed orthogonal grooves,indicate that the extraordinary field enhancement of strong polarization sensitivity in the deep-subwavelength groove plays an important role in single-groove growth with high stability and collimation.
文摘Sialon/ Si C m ultiphase refractory w as directly synthesized using cheap clay , Si C particlesand proper ad ditives . The new synthesizing process is si m ple an d of low cost . The synthesizedm aterial has good roo m tem perature m echanical properties and ther m al shock resistance . Thisw ork has provided the experi mental basis for the ap plication of high property an d cheap Sialon/ Si C m ultiphase refractories .
文摘The formation of a special Si-rich layer on the periphery of Al-Si eutectic alloy specimen during directional solidification in rotary electromagnetic field has been investigated.This layer seems due to the migration of some Si grains onto the crucible wall,then stagnating and coarsening further.
基金This work was financially supported by the special funds for the major basic research projects(No.G2000067205-4).
文摘Pulsed Nd:YAG laser was used to irradiate Si substrate immersed in AgNO3 ethylene glycol solution to deposit Ag films along the lines scanned by laser on the substrate, which is a photo-thermal decomposing process. The decomposed Ag atoms congregate and form polycrystalline Ag particles. The Ag concentration changes greatly with the total laser energyA absorbed by substrate. Transmission electron microscopy (TEM) observation shows the Ag particles are inlaid in the Si substrate. Auger electron spectrum (AES) shows that the Ag concentration decreases with the increase of the sputtering depth, and there is no oxygen element on the surface of the deposited Ag films.
基金National Natural Science Foundation of China (50372037)Scientific Research Foundations of Shaanxi University of Science and Technology (SUST-B14)
文摘SiCp/Al2O3-Al composites were synthesized by means of direct metal oxidation method. The composition and microstructures of the composites were investigated using X-ray diffraction （XRD）, scanning electron microscopy （SEM） and metallurgical microscope. The effects of technical parameters on the properties of the product were analyzed. The results indicate that the composite possesses a dense microstructure, composed of three interpenetrated phases. Of them, SiO2 layer prohibits the powdering of the composites; Mg promotes the wetting and infiltration of the system and Si restricts the interfacial reaction while improving the wetting ability between reinforcement and matrix.
