A novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor（CMOS） technology, is proposed in this paper. An embedded gated-Pi N junction...A novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor（CMOS） technology, is proposed in this paper. An embedded gated-Pi N junction structure is employed to reduce the diode string leakage current to 13 n A/μm in a temperature range from 25°C to 85°C. To provide the effective electrostatic discharge（ESD） protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.展开更多
The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced tech- nologies as an electrostatic-discharge （ESD） protection device. This paper presents the reverse breakdown, curr...The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced tech- nologies as an electrostatic-discharge （ESD） protection device. This paper presents the reverse breakdown, current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes. To evaluate the ESD robustness, the forward and reverse TLP I-V characteristics were measured. The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally, to explain the effects of the device parameters, we analyze and discuss the inherent properties ofpolysilicon p-i-n diodes.展开更多
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00606)
文摘A novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor（CMOS） technology, is proposed in this paper. An embedded gated-Pi N junction structure is employed to reduce the diode string leakage current to 13 n A/μm in a temperature range from 25°C to 85°C. To provide the effective electrostatic discharge（ESD） protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.
文摘The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced tech- nologies as an electrostatic-discharge （ESD） protection device. This paper presents the reverse breakdown, current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes. To evaluate the ESD robustness, the forward and reverse TLP I-V characteristics were measured. The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally, to explain the effects of the device parameters, we analyze and discuss the inherent properties ofpolysilicon p-i-n diodes.
