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Different Diffusion Behavior of Cu and Ni Undergoing Liquidesolid Electromigration 被引量:1
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作者 M.L.Huang Z.J.Zhang +1 位作者 H.T.Ma L.D.Chen 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2014年第12期1235-1242,共8页
The diffusion behavior of Cu and Ni atoms undergoing liquidesolid electromigration(L-S EM) was investigated using Cu/Sn/Ni interconnects under a current density of 5.0 103A/cm2 at 250℃. The flowing direction of ele... The diffusion behavior of Cu and Ni atoms undergoing liquidesolid electromigration(L-S EM) was investigated using Cu/Sn/Ni interconnects under a current density of 5.0 103A/cm2 at 250℃. The flowing direction of electrons significantly influences the cross-solder interaction of Cu and Ni atoms, i.e., under downwind diffusion, both Cu and Ni atoms can diffuse to the opposite interfaces; while under upwind diffusion,Cu atoms but not Ni atoms can diffuse to the opposite interface. When electrons flow from the Cu to the Ni, only Cu atoms diffuse to the opposite anode Ni interface, resulting in the transformation of interfacial intermetallic compound(IMC) from Ni3Sn4into(Cu,Ni)6Sn5and further into [(Cu,Ni)6Sn5t Cu6Sn5], while no Ni atoms diffuse to the opposite cathode Cu interface and thus the interfacial Cu6Sn5 remained.When electrons flow from the Ni to the Cu, both Cu and Ni atoms diffuse to the opposite interfaces,resulting in the interfacial IMC transformation from initial Cu6Sn5into(Cu,Ni)6Sn5and further into[(Cu,Ni)6Sn5t(Ni,Cu)3Sn4] at the anode Cu interface while that from initial Ni3Sn4into(Cu,Ni)6Sn5and further into(Ni,Cu)3Sn4at the cathode Ni interface. It is more damaging with electrons flowing from the Cu to the Ni than the other way. 展开更多
关键词 Cu/Sn/Ni electromigration Cross-solder interaction Interfacial reaction diffusion
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Energy variation in diffusive void nucleation induced by electromigration
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作者 Yuexing Wang Yao Yao +1 位作者 Zhang Long Leon Keer 《Acta Mechanica Sinica》 SCIE EI CAS CSCD 2020年第4期866-872,共7页
An energy approach is proposed to describe electromigration induced void nucleation based on phase transformation theory.The chemical potential for an individual migrated atom is predicted by diffusion induced back st... An energy approach is proposed to describe electromigration induced void nucleation based on phase transformation theory.The chemical potential for an individual migrated atom is predicted by diffusion induced back stress equivalent principle.After determining the chemical potential for the dilfusing atoms,the Gibbs free energy controlling the void nucleation can be determined and the mass diffusion process is considered.The critical void radius and nucleation time are determined analytically when the Gibbs free energy approaches the extreme value.The theoretical predictions are compared with the experimental results from literatures and show good accuracy.The proposed model can also be applied to other diffusion induced damage processes such as thermomigration and stress migration. 展开更多
关键词 ENERGY electromigration Void nucleation diffusion
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Effect of temperature on interface diffusion in micro solder joint under current stressing 被引量:1
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作者 李雪梅 孙凤莲 +1 位作者 张浩 辛瞳 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第5期1699-1703,共5页
The effects of temperature on Cu pad consumption and intermetallic compound(IMC) growth were investigated under current stressing. The Cu/Sn-3.0Ag-0.5Cu(SAC305)/Cu solder joints were used, with a certain current d... The effects of temperature on Cu pad consumption and intermetallic compound(IMC) growth were investigated under current stressing. The Cu/Sn-3.0Ag-0.5Cu(SAC305)/Cu solder joints were used, with a certain current density of 0.76×104A/cm^2 at 100, 140, 160 and 180 °C. The constitutive equations of cathode Cu pad consumption and anode interface IMC growth are established, respectively, based on the loading time and sample temperature. The cathode Cu pad consumption(δ) increases linearly with the loading time and the consumption rate shows parabolic curve relationships with sample temperature. The anode interface IMC thickness(δ1) increased is linearly with the square root of loading time and the interface IMC growth coefficient shows parabolic curve relationship with sample temperature. The δ and δ1 have different variation laws under current stressing, due to the current facilitating larger amount of IMC formation in the bulk solder. 展开更多
关键词 electromigration element diffusion intermetallic compounds Cu pad consumption
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Fast and Huge Anisotropic Diffusion of Cu(Ag) and Its Resistance on the Sn Self-diffusivity in Solid β–Sn
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作者 Peitao Liu Shoulong Wang +2 位作者 Dianzhong Li Yiyi Li Xing-Qiu Chen 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2016年第2期121-128,共8页
The site preferences, fast and huge anisotropic diffusion mechanisms of Cu (Ag) in β-Sn as well as their reduction on the self-diffusivity of Sn, have been investigated using the first-principles and ab initio mole... The site preferences, fast and huge anisotropic diffusion mechanisms of Cu (Ag) in β-Sn as well as their reduction on the self-diffusivity of Sn, have been investigated using the first-principles and ab initio molecular dynamics methods. We have found that Cu prefers the interstitial site, whereas Ag is preferable in the substitutional site, which is mostly dominated by their different size factors. Electronic structure further evidences that the d-s hybridization between the solute and the host atom also contributes to the site preferences. It is also deduced that the fast diffusion of Cu (Ag) is mostly due to the interstitial diffusion mechanism and their diffusivity can be correlated with the amount of their respective interstitial solution. Their faster diffusion along the c-axis can be attributed to the extremely low migration energy barrier caused by the straight tunnel of considerable size with the screw axis symmetry of 2π/4 along the c-axis. Furthermore, it is found that during the process of diffusion the interstitially dissolved Cu (Ag) atoms would combine with the nearby Sn-vacancy and further annihilate the vacancy, thereby reducin~ the self-diffusion of Sn. 展开更多
关键词 diffusion electromigration β-snfirst-principles
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A theoretical analysis of the electromigration-induced void morphological evolution under high current density 被引量:7
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作者 Yuexing Wang Yao Yao 《Acta Mechanica Sinica》 SCIE EI CAS CSCD 2017年第5期868-878,共11页
In this work, analysis of electromigration-induced void morphological evolution in solder interconnects is performed based on mass diffusion theory. The analysis is conducted for three typical experimentally observed ... In this work, analysis of electromigration-induced void morphological evolution in solder interconnects is performed based on mass diffusion theory. The analysis is conducted for three typical experimentally observed void shapes: circular, ellipse, and cardioid. Void morphological evolution is governed by the competition between the electric field and surface capillary force. In the developed model, both the electric field and capillary force on the void's surface are solved analytically. Based on the mass conversation principle, the normal velocity on the void surface during diffusion is obtained. The void morphological evolution behavior is investigated, and a physical model is developed to predict void collapse to a crack or to split into sub-voids under electric current. It is noted that when the electric current is being applied from the horizontal direction, a circular void may either move stably along the electric current direction or collapse to a finger shape, depending on the relative magnitude of the electric current and surface capillary force. However, the elliptical-shaped void will elongate along the electric current direction and finally collapse to the finger shape. On the other hand, the cardioid-shaped void could bifurcate into two sub-voids when the electric current reaches a critical value. The theoretical predictions agree well with the experimental observations. 展开更多
关键词 electromigration Analytical solution Void evolution High current density Mass diffusion
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Effect of Interconnect Linewidth on Evolution of Intragranular Microcracks Due to Electromigration Analyzed by Finite Element Method 被引量:3
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作者 HE Dingni HUANG Peizhen 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2019年第2期290-297,共8页
The effect of interconnect linewidth on the evolution of intragranular microcracks due to surface diffusion induced by electromigration is analyzed by finite element method.The numerical results indicate that there ex... The effect of interconnect linewidth on the evolution of intragranular microcracks due to surface diffusion induced by electromigration is analyzed by finite element method.The numerical results indicate that there exists critical values of the linewidth hc,the electric fieldχc and the aspect ratioβc.When h>hc,χ<χc orβ<βc,the microcrack will evolve into a stable shape as it migrates along the interconnect line.When h≤hc,χ≥χc orβ≥βc,the microcrack will split into two smaller microcracks.The critical electric field,the critical aspect ratio and the splitting time have a stronger dependence on the linewidth when h≤6.In addition,the decrease of the linewidth,the increase of the electric field or the aspect ratio is beneficial to accelerate microcrack splitting,which may delay the open failure of the interconnect line. 展开更多
关键词 finite element method surface diffusion electromigration LINEWIDTH MICROCRACK EVOLUTION
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Numerical Simulation on Intergranular Microcracks in Interconnect Lines Due to Surface Diffusion Induced by Stress-,Electro-and Thermo-migration 被引量:3
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作者 ZHOU Linyong HUANG Peizhen 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2019年第6期1004-1017,共14页
Based on the weak formulation for combined surface diffusion and evaporation-condensation,a governing equation of the finite element is derived for simulating the evolution of intergranular microcracks in copper inter... Based on the weak formulation for combined surface diffusion and evaporation-condensation,a governing equation of the finite element is derived for simulating the evolution of intergranular microcracks in copper interconnects induced simultaneously by stressmigration,electromigration and thermomigration.Unlike previously published works,the effect of thermomigration is considered.The results show that thermomigration can contribute to the microcrack splitting and accelerate the drifting process along the direction of the electric field.The evolution of the intergranular microcracks depends on the mechanical stress field,the temperature gradient field,the electric field,the initial aspect ratio and the linewidth.And there exists a critical electric fieldχ_c,a critical stress field■,a critical aspect ratioβ_c and a critical linewidth■.When■or■,the intergranular microcrack will split into two or three small intergranular microcracks.Otherwise,the microcrack will evolve into a stable shape as it migrates along the interconnect line.The critical stress field,the critical electric field and the critical aspect ratio decrease with a decrease in the linewidth,and the critical linewidth increases with an increase in the electric field and the aspect ratio.The increase of the stress field,the electric field or the aspect ratio and the decrease of the linewidth are not only beneficial for the intergranular microcrack to split but also accelerate the microcrack splitting process. 展开更多
关键词 stressmigration electromigration thermomigration surface diffusion finite element method intergranular microcrack
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Mechanism of improved electromigration reliability using Fe-Ni UBM in wafer level package 被引量:3
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作者 Li-Yin Gao Hao Zhang +2 位作者 Cai-Fu Li Jingdong GUO Zhi-Quan Liu 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2018年第8期1305-1314,共10页
Fe-Ni films with compositions of 73 wt% of Ni and 45 wt% of Ni were used as under bump metallization (UBM) in wafer level chip scale package, and their reliability was evaluated through electromigration (EM) test ... Fe-Ni films with compositions of 73 wt% of Ni and 45 wt% of Ni were used as under bump metallization (UBM) in wafer level chip scale package, and their reliability was evaluated through electromigration (EM) test compared with commercial Cu UBM. For Sn3.SAg0.7Cu(SAC)]Cu solder joints, voids had initiated at Cu cathode after 300 h and typical failures of depletion of Cu cathode and cracks were detected after 1000 h EM. While the SAC]Fe-Ni solder joints kept at a perfect condition without any failures after 1000 h EM. Moreover, the characteristic lifetime calculated by Weibull analysis for Fe-73Ni UBM (2121 h), Fe-45Ni UBM (2340 h) were both over three folds to Cu UBM's (698 h). The failure modes for Fe-Ni solder joints varied with the different growth behavior of intermetallic compounds (IMCs), which can all be classified as the crack at the cathodic interface between solder and outer IMC layer. The atomic fluxes concerned cathode dissolution and crack initiation were analyzed. When Fe-Ni UBM was added, cathode dissolution was suppressed due to the low diffusivity of IMCs and opposite transferring direction to electron flow of Fe atoms. The smaller EM flux within solder material led a smaller vacancy flux in Fe-Ni solder joints, which can explain the delay of solder voids and cracks as well as the much longer lifetime under EM. 展开更多
关键词 Fe-Ni under bump metallization (UBM) Intermetallic compounds (IMCs) electromigration (EM) diffusion Vacancy formation
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An analytical model to predict diffusion induced intermetallic compounds growth in Cu-Sn-Cu sandwich structures
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作者 Yuexing Wang Yao Yao Leon Keer 《Theoretical & Applied Mechanics Letters》 CAS CSCD 2020年第1期33-37,共5页
A mass diffusion model is developed to describe the growth kinetics of Cu6Sn5 intermetallic compounds(IMC)in the Cu-Sn-Cu sandwich structure.The proposed model is based on the local interfacial mass conversation law w... A mass diffusion model is developed to describe the growth kinetics of Cu6Sn5 intermetallic compounds(IMC)in the Cu-Sn-Cu sandwich structure.The proposed model is based on the local interfacial mass conversation law where interfacial Cu/Sn reactions and atomic diffusion are considered.Theoretical analysis shows that the IMC thickness growth is proportional to the square root of the product of the diffusion coefficient and time.The proposed model can explain the polarity effect of electromigration on kinetics of IMC growth where all the parameters have clear physical meaning.The theoretical predictions are compared with experimental results and show reasonable accuracy. 展开更多
关键词 Intermetallic compounds Polarity effect electromigration diffusion Size effect
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电子封装铜互连线多场耦合可靠性及损伤机制的研究进展
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作者 曾超凡 朱忆雪 +2 位作者 杨兆凯 包宏伟 马飞 《中国材料进展》 北大核心 2025年第10期881-892,共12页
伴随着集成电路集成度的增加,芯片尺寸不断减小,铜互连线的尺寸也逐渐达到纳米级别,铜互连线在力、热、电多场耦合条件下的电迁移行为是影响小尺寸下其可靠性的重要因素。首先介绍了小尺寸铜互连面临的主要问题,如,电子散射及扩散阻挡... 伴随着集成电路集成度的增加,芯片尺寸不断减小,铜互连线的尺寸也逐渐达到纳米级别,铜互连线在力、热、电多场耦合条件下的电迁移行为是影响小尺寸下其可靠性的重要因素。首先介绍了小尺寸铜互连面临的主要问题,如,电子散射及扩散阻挡层导致的电阻率的增加以及电迁移现象的加剧。其次,探讨了微观结构、宏观尺寸以及制作工艺等方面对铜互连线电迁移行为的影响,这些影响因素显著改变了铜互连线的电迁移行为及寿命;介绍了对铜互连线进行电迁移行为及寿命预测的有限元法、相场法、熵损伤模型等模拟方法。最后,根据目前已知的影响电迁移的因素进一步指出了有望改善铜互连线的电迁移的发展策略以及研究方向,为高性能铜互连材料设计提供重要参考。 展开更多
关键词 集成电路 铜互连线 电迁移 扩散阻挡层 模拟方法
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外加电场作用下氯离子在钢筋混凝土结构中的扩散模拟 被引量:9
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作者 胡少伟 朱雅仙 +2 位作者 游日 吴烨 蔡伟成 《水运工程》 北大核心 2010年第8期7-11,共5页
对强制电流阴极保护下氯离子在钢筋混凝土结构中扩散进行了有限元数值模拟;通过建立阻盐系统的数学模型,计算比较了不同电场下特定区域的氯离子浓度,研究了电场、氯离子浓度之间的相关性,从而为阻盐防护技术的实施提供依据。
关键词 外加电场 氯离子扩散 电迁移 阴极保护
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铜互连电迁移失效的研究与进展 被引量:4
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作者 刘彬 刘静 +2 位作者 吴振宇 汪家友 杨银堂 《微纳电子技术》 CAS 2007年第4期211-216,共6页
Cu/低k互连的电迁移失效与互连材料、工艺、结构和测试条件都有着密切的联系。论述了近年来铜互连电迁移可靠性的研究进展,讨论了电迁移的基本原理、失效现象及其相关机制和微效应以及主导失效的机制——界面扩散等,同时探讨了改善铜互... Cu/低k互连的电迁移失效与互连材料、工艺、结构和测试条件都有着密切的联系。论述了近年来铜互连电迁移可靠性的研究进展,讨论了电迁移的基本原理、失效现象及其相关机制和微效应以及主导失效的机制——界面扩散等,同时探讨了改善铜互连电迁移性能的各种方法,主要有铜合金、增加金属覆盖层及等离子体表面处理等方法,并指出了Cu互连电迁移可靠性研究有待解决的问题。 展开更多
关键词 铜互连 电迁移 界面扩散 失效
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三维封装电迁移Cu互连线的多物理场模拟仿真 被引量:10
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作者 张墅野 鲍天宇 +1 位作者 修子扬 何鹏 《材料导报》 EI CAS CSCD 北大核心 2021年第2期2133-2138,共6页
随着三维封装微互连尺寸向亚微米发展,电流密度大、应力大、散热困难等问题愈发严重,原子尺度迁移失效现象逐渐成为超大规模集成电路不可忽视的可靠性问题。铜比铝的电阻率低,抗电迁移性能更好,是新一代的可靠互连材料,但是对铜互连的... 随着三维封装微互连尺寸向亚微米发展,电流密度大、应力大、散热困难等问题愈发严重,原子尺度迁移失效现象逐渐成为超大规模集成电路不可忽视的可靠性问题。铜比铝的电阻率低,抗电迁移性能更好,是新一代的可靠互连材料,但是对铜互连的原子迁移研究仍有不足。现有的电迁移(Electromigration)可靠性解析化模型主要针对单根金属线恒定温度情形下的电迁移分析,这种方法虽然计算较为简单,但是对现实情况的指导意义较小,主要原因:一是现实情况下高密度集成电路中存在温度梯度,二是互连线的三维结构对互连线的温度以及电流分布有重要影响,而这些参数严重影响着金属原子的抗电迁移性能。本工作提出一种新的电迁移仿真建模方法,通过COMSOL多物理场软件建立了经典三维Cu互连线结构。通过有限元仿真得到三维互连线的温度、电流密度和应力分布,获得了更优的数据仿真结果。结果显示,金属互连线中电流在直角内侧有严重的淤积现象,电迁移在互连线转折处最为剧烈;高温区域位于直角内外侧之间,热迁移的程度随着温度的升高而升高;高应力区域主要是互连线的外边缘处,但是应力迁移在总体电迁移中占比较小,几乎可以忽略。另外,Cu互连线的抗电迁移性能总体优于Ag互连线,是优异的高密度集成电路导体材料。 展开更多
关键词 电迁移 互连线 原子扩散通量散度 温度影响 材料影响
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微焊点Cu/SAC305/Cu固-液界面反应及电迁移行为 被引量:7
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作者 李雪梅 孙凤莲 +1 位作者 张浩 辛瞳 《焊接学报》 EI CAS CSCD 北大核心 2016年第9期61-64,131,共4页
研究了电迁移过程中Cu/Sn-3.0Ag-0.5Cu/Cu微焊点界面金属间化合物(IMC)的生长演变机制,分析了电载荷作用下固-液电迁移与固-固电迁移的区别.结果表明,固-液电迁移过程中,随着加载时间的延长,两极IMC层厚度均增厚,且阳极IMC层厚度增长速... 研究了电迁移过程中Cu/Sn-3.0Ag-0.5Cu/Cu微焊点界面金属间化合物(IMC)的生长演变机制,分析了电载荷作用下固-液电迁移与固-固电迁移的区别.结果表明,固-液电迁移过程中,随着加载时间的延长,两极IMC层厚度均增厚,且阳极IMC层厚度增长速率比阴极大;阴极侧IMC晶粒径向尺寸一直增大,轴向尺寸呈先增大后减小的变化规律,阳极侧IMC晶粒的尺寸在轴向与径向均增大;加载过程中,阳极IMC晶粒尺寸始终大于阴极;与固-固电迁移相比,固-液电迁移后,阴极侧,焊点IMC形貌更规则,且表面光滑度提高;阳极侧,固-固扩散时界面IMC晶粒形貌为多边形球状,而固-液扩散时界面IMC形貌为多边形柱状. 展开更多
关键词 电迁移 界面金属间化合物 元素扩散 无铅焊点
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电-热耦合作用下Cu/SAC305/Cu中IMC的生长及元素扩散 被引量:1
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作者 李雪梅 孙凤莲 +2 位作者 刘洋 张浩 辛瞳 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2014年第12期3047-3051,共5页
在一定温度及电流密度下对Cu/SAC305(Sn-3.0Ag-0.5Cu)/Cu焊点进行不同加载时间的电迁移时效试验。分析了电-热耦合作用下,焊点界面IMC的生长机理及界面近区元素扩散特征。结果表明:电-热耦合作用下阳极界面IMC(金属间化合物)层厚度变化... 在一定温度及电流密度下对Cu/SAC305(Sn-3.0Ag-0.5Cu)/Cu焊点进行不同加载时间的电迁移时效试验。分析了电-热耦合作用下,焊点界面IMC的生长机理及界面近区元素扩散特征。结果表明:电-热耦合作用下阳极界面IMC(金属间化合物)层厚度变化与加载时间成抛物线关系;阴极界面IMC层形貌变化显著,其厚度随加载时间的延长呈现先增厚后减薄的变化特征;焊点界面近区元素扩散分为两个阶段:初始阶段由于焊点各部分元素浓度相差悬殊,浓度梯度引起的元素扩散起主导作用,促进两极界面IMC厚度增加;扩散到一定程度后界面近区元素浓度梯度相对减小,电子风力引起的元素扩散占主导部分,促进阴极IMC分解阳极IMC形成,导致阴极IMC层厚度减薄,阳极IMC层厚度逐渐增大。 展开更多
关键词 SAC 电迁移 IMC 元素扩散
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电迁移不同失效模式的微观机理及其有限元寿命预测 被引量:5
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作者 张继成 张元祥 +1 位作者 王静 梁利华 《电子元件与材料》 CAS CSCD 北大核心 2018年第9期9-15,共7页
基于电迁移加速试验,在不同的电流密度及温度条件下对BGA结构的电迁移失效模式进行了分析。从原子扩散剧烈程度的角度,得到了由原子的显著迁移以及裂纹的扩展所引起的电迁移失效模式的竞争机制。同时利用原子密度积分算法,通过自适应时... 基于电迁移加速试验,在不同的电流密度及温度条件下对BGA结构的电迁移失效模式进行了分析。从原子扩散剧烈程度的角度,得到了由原子的显著迁移以及裂纹的扩展所引起的电迁移失效模式的竞争机制。同时利用原子密度积分算法,通过自适应时间增量步算法来提高其计算精度及效率,并用来分析其电迁移寿命。将试验及模拟结果进行对比,分析了目前电迁移算法的弊端,并提出了改进方案。 展开更多
关键词 电迁移试验 原子扩散 裂纹扩展 失效模式 数值模拟 寿命预测
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管脚无铅覆层的Sn晶须问题 被引量:2
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作者 吴懿平 刘一波 +3 位作者 吴丰顺 安兵 张金松 陈明辉 《功能材料》 EI CAS CSCD 北大核心 2005年第7期971-974,共4页
Sn镀层表面在某些情况下会长出长达数百微米的晶须,在电子器件服役过程中会导致电路短路等严重的可靠性问题。目前普遍认为内部压应力是导致Sn晶须生长的主要动力之一;晶须生长所需的Sn原子主要以扩散方式或位错运动方式提供,而温度因... Sn镀层表面在某些情况下会长出长达数百微米的晶须,在电子器件服役过程中会导致电路短路等严重的可靠性问题。目前普遍认为内部压应力是导致Sn晶须生长的主要动力之一;晶须生长所需的Sn原子主要以扩散方式或位错运动方式提供,而温度因素既影响原子扩散速度,又影响镀层的应力松弛。预镀Ni或者预先热处理以形成扩散阻挡层来抑制晶须生长的方法较为常用。温度循环是加速晶须生长的一种有效手段。 展开更多
关键词 晶须 无铅 可靠性 电迁移 封装
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ULSI中Cu互连线的显微结构及可靠性 被引量:1
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作者 王晓冬 吉元 +4 位作者 李志国 卢振军 夏洋 刘丹敏 肖卫强 《电子学报》 EI CAS CSCD 北大核心 2004年第8期1302-1304,共3页
观察了ULSI中大马士革结构的Cu互连线的晶粒生长和晶体学取向 .分析了线宽及退火对Cu互连线显微结构及电徙动的影响 .Cu互连线的晶粒尺寸随着线宽的变窄而减小 .与平坦Cu膜相比 ,Cu互连线形成微小的晶粒和较弱的 (111)织构 .30 0℃、30... 观察了ULSI中大马士革结构的Cu互连线的晶粒生长和晶体学取向 .分析了线宽及退火对Cu互连线显微结构及电徙动的影响 .Cu互连线的晶粒尺寸随着线宽的变窄而减小 .与平坦Cu膜相比 ,Cu互连线形成微小的晶粒和较弱的 (111)织构 .30 0℃、30min退火促使Cu互连线的晶粒长大、(111)织构发展 ,从而提高了Cu互连线抗电徙动的能力 .结果表明 ,Cu的扩散涉及晶界扩散与界面扩散 ,而对于较窄线宽的Cu互连线 ,界面扩散成为Cu互连线电徙动失效的主要扩散途径 . 展开更多
关键词 Cu互连线 晶体学取向 晶粒尺寸 电徙动
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电场增强Ni诱导非晶硅横向结晶及其电迁移效应 被引量:1
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作者 王光伟 张建民 +1 位作者 张平 许书云 《微电子学》 CAS CSCD 北大核心 2009年第4期588-592,共5页
在外加直流电场作用下,Ni诱导非晶硅(a-Si)薄膜发生横向结晶。影响Ni诱导a-Si薄膜横向结晶的因素有很多,如场强、反应以及退火条件等。适当强度的电场能显著加快Ni横向诱导a-Si结晶速率,当场强超过某一临界值,则该速率降低。基于电迁移... 在外加直流电场作用下,Ni诱导非晶硅(a-Si)薄膜发生横向结晶。影响Ni诱导a-Si薄膜横向结晶的因素有很多,如场强、反应以及退火条件等。适当强度的电场能显著加快Ni横向诱导a-Si结晶速率,当场强超过某一临界值,则该速率降低。基于电迁移效应,给出较为合理的解释。 展开更多
关键词 金属诱导横向结晶 电场增强横向诱导结晶 扩散 固相反应 电迁移 晶粒生长
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金属诱导a-Si横向结晶速率与外电场的关系
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作者 王光伟 姚素英 +1 位作者 王雅欣 刘颖 《材料导报》 EI CAS CSCD 北大核心 2010年第15期18-21,共4页
分析了外加直流电场对Al和Ni诱导非晶硅(a-Si)薄膜横向结晶速率的影响,指出,在热处理条件下,Al和Ni能加快诱导a-Si薄膜横向结晶的速率;适当强度的外加电场能明显加快金属诱导a-Si横向结晶速率;Al和Ni诱导a-Si结晶速率的增大主要是电场... 分析了外加直流电场对Al和Ni诱导非晶硅(a-Si)薄膜横向结晶速率的影响,指出,在热处理条件下,Al和Ni能加快诱导a-Si薄膜横向结晶的速率;适当强度的外加电场能明显加快金属诱导a-Si横向结晶速率;Al和Ni诱导a-Si结晶速率的增大主要是电场提高了扩散物的迁移率。但场强超过某临界值后该速率降低。基于电迁移效应,对此结果作了较合理的解释。结合文献,提出一经验公式,并用MATLAB模拟了外电场中Al和Ni诱导a-Si薄膜横向结晶速率曲线。 展开更多
关键词 电场增强横向诱导结晶 扩散 电迁移 晶粒长大
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