A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor（HEMT）.An anomalous critical drain-to-gate voltage with a negative temperature coefficient ...A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor（HEMT）.An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence,beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress.While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress,the recovery is attributed to high field induced electron detrapping.The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT.展开更多
Up-conversion charging(UCC)is a promising approach for charging storage phosphors using low-energy excitation light sources.For further understanding the UCC,research on the competition between trapping and detrapping...Up-conversion charging(UCC)is a promising approach for charging storage phosphors using low-energy excitation light sources.For further understanding the UCC,research on the competition between trapping and detrapping during illumination is essentially required.Here we demonstrate the effect of detrapping on UCC dynamics by a rate equation approach.Accordingly,taking LaMgGa_(11)O_(19):Pr^(^(3+))phosphor as an example,we experimentally verified the dependence of illumination dose and duration on the thermoluminescence intensities using 450 nm laser excitation.The present model and experimental approach appear to be transferable to other phosphors,Thus,many existing persistent phosphors can now be revisited,paving the way toward advancing the understanding of UCC.展开更多
N-dodecanethiol capped zinc sulfide（Zn S） nanocrystals were synthesized by the one-pot approach and blended with poly（N-vinylcarbazole）（PVK） to fabricate electrical bistable devices. The corresponding devices di...N-dodecanethiol capped zinc sulfide（Zn S） nanocrystals were synthesized by the one-pot approach and blended with poly（N-vinylcarbazole）（PVK） to fabricate electrical bistable devices. The corresponding devices did exhibit electrical bistability and negative differential resistance（NDR） effects. A large ON/OFF current ratio of 104 at negative voltages was obtained by applying different amplitudes of sweeping voltage. The observed conductance switching and the negative differential resistance are attributed to the electric-field-induced charge transfer between the nanocrystals and the polymer,and the charge trapping/detrapping in the nanocrystals.展开更多
The influence of white light illumination on the stability of an amorphous In GaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light e...The influence of white light illumination on the stability of an amorphous In GaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed.展开更多
This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors(HEMTs) submitted to off-state stress. The threshold voltage shows a posit...This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors(HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.展开更多
The broadband photochromic effect on undoped and rare-earth-doped lead lanthanum zirconate titanate(PLZT) ceramics was studied under the illumination of ultraviolet light at 360 nm. The photocarriers’ trapping and de...The broadband photochromic effect on undoped and rare-earth-doped lead lanthanum zirconate titanate(PLZT) ceramics was studied under the illumination of ultraviolet light at 360 nm. The photocarriers’ trapping and detrapping processes of thermal disconnected traps played the vital role in both darkening and bleaching processes. The interaction between photocarrier traps and rare-earth ion energy levels was demonstrated, which influenced the photochromatic darkening performance greatly. The transformation of photoluminescence spectra in Er3+-doped PLZT ceramics also improved the physical picture of the trap’s distribution of the materials.This work could be used to modulate the photoluminescence and lasing behavior.展开更多
A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Star...A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by extensive experimental data of trapping and de-trapping stress from different high-k gate configurations.展开更多
文摘A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor（HEMT）.An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence,beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress.While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress,the recovery is attributed to high field induced electron detrapping.The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT.
基金Project supported by the National Natural Science Foundation of China(11774046)the Department of Science and Technology of Jilin Province(20180414082 GH)。
文摘Up-conversion charging(UCC)is a promising approach for charging storage phosphors using low-energy excitation light sources.For further understanding the UCC,research on the competition between trapping and detrapping during illumination is essentially required.Here we demonstrate the effect of detrapping on UCC dynamics by a rate equation approach.Accordingly,taking LaMgGa_(11)O_(19):Pr^(^(3+))phosphor as an example,we experimentally verified the dependence of illumination dose and duration on the thermoluminescence intensities using 450 nm laser excitation.The present model and experimental approach appear to be transferable to other phosphors,Thus,many existing persistent phosphors can now be revisited,paving the way toward advancing the understanding of UCC.
基金supported by the National Natural Science Foundation of China(Grant No.61377028)the Natural Science Funds for Distinguished Young Scholar,China(Grant No.61125505)the Fundamental Research Funds for the Central Universities,China(Grant No.2014JBZ009)
文摘N-dodecanethiol capped zinc sulfide（Zn S） nanocrystals were synthesized by the one-pot approach and blended with poly（N-vinylcarbazole）（PVK） to fabricate electrical bistable devices. The corresponding devices did exhibit electrical bistability and negative differential resistance（NDR） effects. A large ON/OFF current ratio of 104 at negative voltages was obtained by applying different amplitudes of sweeping voltage. The observed conductance switching and the negative differential resistance are attributed to the electric-field-induced charge transfer between the nanocrystals and the polymer,and the charge trapping/detrapping in the nanocrystals.
基金supported by the State Key Program for Basic Research of China(Grant Nos.2011CB301900 and 2011CB922100)the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province,China
文摘The influence of white light illumination on the stability of an amorphous In GaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed.
基金Project supported by the Program for New Century Excellent Talents in Universities, China （Grant No. NCET-12-0915）.
文摘This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors(HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.
基金supported by the National Natural Science Foundation of China (NSFC)(Nos. 61805206 and11804036)the Fund of China Scholarship Council(No. 201806995045)。
文摘The broadband photochromic effect on undoped and rare-earth-doped lead lanthanum zirconate titanate(PLZT) ceramics was studied under the illumination of ultraviolet light at 360 nm. The photocarriers’ trapping and detrapping processes of thermal disconnected traps played the vital role in both darkening and bleaching processes. The interaction between photocarrier traps and rare-earth ion energy levels was demonstrated, which influenced the photochromatic darkening performance greatly. The transformation of photoluminescence spectra in Er3+-doped PLZT ceramics also improved the physical picture of the trap’s distribution of the materials.This work could be used to modulate the photoluminescence and lasing behavior.
基金supported by the Special Funds for the State Key Development Program for Basic Research of Chinathe National Natural Science Foundation of China (No.60876027)
文摘A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by extensive experimental data of trapping and de-trapping stress from different high-k gate configurations.
