A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the tr...A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement,respectively.The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.The high 2DEG mobility in excess of 1260cm2/(V·s) is achieved with an electron density of 1.429×10 13cm -2 at 297K,corresponding to a sheet-density-mobility product of 1.8×10 16V -1·s -1.Devices based on the structure are fabricated and characterized.Better DC characteristics,maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer.The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.展开更多
The spin-dependent conductance and magnetoresistance ratio （MRR） for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix...The spin-dependent conductance and magnetoresistance ratio （MRR） for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300% and 3800% for the magnetic barrier spaces W = 81.3 and 243.9 nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics.展开更多
In this paper, we obtain considerable spin-orbit （SO） parameters in AlxGa1-xN/GaN quantum wells （QWs） with sheet carrier concentration N8 = 120 × 10^11/cm^2. With increasing AI content （x） of the barrier, t...In this paper, we obtain considerable spin-orbit （SO） parameters in AlxGa1-xN/GaN quantum wells （QWs） with sheet carrier concentration N8 = 120 × 10^11/cm^2. With increasing AI content （x） of the barrier, the SO parameters increase as a whole, and the two major contributions are found to be the decrease of the expansion region of the envelope functions and the increase of the polarized electric field in the well. Compared with the Rashba parameters for the first two subbands, the intersubband SO parameter is a bit smaller and varies more slowly with x. The results indicate the SO parameters, especially the Rashba parameters can be engineered by the AI composition of the barrier, which may be helpful to the spin manipulation of III-nitride low-dimensional heterostructures.展开更多
Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electro...Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas （2DEG） at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.展开更多
文摘A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement,respectively.The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.The high 2DEG mobility in excess of 1260cm2/(V·s) is achieved with an electron density of 1.429×10 13cm -2 at 297K,corresponding to a sheet-density-mobility product of 1.8×10 16V -1·s -1.Devices based on the structure are fabricated and characterized.Better DC characteristics,maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer.The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10574042 and 10974052)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20060542002)
文摘The spin-dependent conductance and magnetoresistance ratio （MRR） for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300% and 3800% for the magnetic barrier spaces W = 81.3 and 243.9 nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics.
文摘In this paper, we obtain considerable spin-orbit （SO） parameters in AlxGa1-xN/GaN quantum wells （QWs） with sheet carrier concentration N8 = 120 × 10^11/cm^2. With increasing AI content （x） of the barrier, the SO parameters increase as a whole, and the two major contributions are found to be the decrease of the expansion region of the envelope functions and the increase of the polarized electric field in the well. Compared with the Rashba parameters for the first two subbands, the intersubband SO parameter is a bit smaller and varies more slowly with x. The results indicate the SO parameters, especially the Rashba parameters can be engineered by the AI composition of the barrier, which may be helpful to the spin manipulation of III-nitride low-dimensional heterostructures.
文摘Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas （2DEG） at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.
