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Electronic transport of bilayer graphene with asymmetry line defects
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作者 赵小明 吴亚杰 +2 位作者 陈婵 梁颖 寇谡鹏 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第11期461-465,共5页
In this paper,we study the quantum properties of a bilayer graphene with(asymmetry) line defects.The localized states are found around the line defects.Thus,the line defects on one certain layer of the bilayer graph... In this paper,we study the quantum properties of a bilayer graphene with(asymmetry) line defects.The localized states are found around the line defects.Thus,the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel.By adding a bias potential along the direction of the line defects,we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Biittiker theory,and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene.This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering. 展开更多
关键词 defects nanotechnology adding asymmetry remarkably localized perfect conductance zigzag nanotube
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