Progress in the design and fabrication of ultraviolet and deep-ultraviolet groupⅢ–nitride optoelectronic devices,based on aluminum gallium nitride and boron nitride and their alloys,and the heterogeneous integration...Progress in the design and fabrication of ultraviolet and deep-ultraviolet groupⅢ–nitride optoelectronic devices,based on aluminum gallium nitride and boron nitride and their alloys,and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed.We emphasize wide-bandgap nitride compound semiconductors(i.e.,(B,Al,Ga)N)as the deep-ultraviolet materials of interest,and two-dimensional materials,namely graphene,two-dimensional boron nitride,and two-dimensional transition metal dichalcogenides,along with gallium oxide,as the hybrid integrated materials.We examine their crystallographic properties and elaborate on the challenges that hinder the realization of efficient and reliable ultraviolet and deep-ultraviolet devices.In this article we provide an overview of aluminum nitride,sapphire,and gallium oxide as platforms for deep-ultraviolet optoelectronic devices,in which we criticize the status of sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on aluminum nitride and gallium oxide substrates.A critical review of the current status of deep-ultraviolet light emission and detection materials and devices is provided.展开更多
Deep-ultraviolet（DUV） light-emitting devices（LEDs） have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-p...Deep-ultraviolet（DUV） light-emitting devices（LEDs） have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-performance DUV LEDs.To realize such optoelectronic devices,the modulation of the bandgap is required.This has been demonstrated by the developments of Mg_xZn_（1-x）O and Be_xZn_（1-x）O alloys for the larger bandgap materials.Many efforts have been made to obtain DUV LEDs,and promising successes have been achieved continuously.In this article,we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.展开更多
A graphene/AlGaN deep-ultraviolet(UV)photodetector is presented with ultrahigh responsivity of 3.4×105 A/W at 261 nm incident wavelength and 149 pW light power.A gain mechanism based on electron trapping at the p...A graphene/AlGaN deep-ultraviolet(UV)photodetector is presented with ultrahigh responsivity of 3.4×105 A/W at 261 nm incident wavelength and 149 pW light power.A gain mechanism based on electron trapping at the potential well is proposed to be responsible for the high responsivity.To optimize the trade-off between responsivity and response speed,a back-gate electrode is designed at the AlGaN/GaN two-dimensional electron gas(2DEG)area which eliminates the persistent photocurrent effect and shortens the recovery time from several hours to milliseconds.The 2DEG gate is proposed as an alternative way to apply the back gate electrode on AlGaN based devices on insulating substrates.This work sheds light on a possible way for weak deep-UV light detection.展开更多
We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti：sapphire laser. A β-BaB2O4 walk-of...We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti：sapphire laser. A β-BaB2O4 walk-off compensation configuration and a KBe2BO3F2 prism-coupled device are adopted for the generation of second harmonic and fourth harmonics, respectively. The highest power is 3.72 mW at 193 nm, and the fluctuation at 2.85 mW in 130 rain is less than ±2%.展开更多
The localized surface plasmon resonance properties of Al and Alcore/Al2O3shell nanosphere dimers with Al and Al core nanosphere radii of 20 nm and Al2O3 shell of 2 nm in the deep-ultraviolet region have been studied u...The localized surface plasmon resonance properties of Al and Alcore/Al2O3shell nanosphere dimers with Al and Al core nanosphere radii of 20 nm and Al2O3 shell of 2 nm in the deep-ultraviolet region have been studied using the finite difference time domain method. The extinction spectra and the electric field distribution profiles of the two dimers for various gap distances between two individual nanospheres are compared with those of the corresponding monomers to reveal the extent of plasmon coupling. It is found that with the interparticle distance decreasing, a strong plasmon coupling between two Al or Alcore/Al2O3shell nanospheres is observed accompanied by a significant red shift in the extinction spectra at the parallel polarization direction of the incident light related to the dimer axis, while for the case of the perpendicular polarization direction, a weak plasmon coupling arises characterized by a slight blue shift in the extinction spectra. The electric field distribution profiles show that benefiting from the dielectric Al2O3 shell, the gap distance of Alcore/Al2O3shell nanosphere dimers can be tailored to 〈 1 nm scale and results in a very high electric field enhancement. The estimated surface-enhanced Raman scattering enhancement factors suggests that the Alcore/Al2O3shell nanosphere dimers with the gap of 〈 1 nm gave rise to an enhancement as high as 8.1 × 10^7 for interparticle gap = 0.5 nm. Our studies reveal that the Alcore/Al2O3shell nanosphere dimers may be promising substrates for surface-enhanced spectroscopy in the deep-ultraviolet region.展开更多
MoS_(2) monolayer, as a highly promising two-dimensional semiconducting material for electronic and optoelectronic applications, exhibits deep-ultraviolet(DUV) laser-induced anomalous lattice dynamics as revealed by R...MoS_(2) monolayer, as a highly promising two-dimensional semiconducting material for electronic and optoelectronic applications, exhibits deep-ultraviolet(DUV) laser-induced anomalous lattice dynamics as revealed by Raman spectroscopy. Remarkably, not only the Raman intensity of many second-order Raman peaks but also the intensity ratio between the first-order modes E′and A′_1 exhibits a non-monotonic behavior that depends on laser energy. Moreover, there are significant inconsistencies in the literature regarding the assignments of these second-order Raman modes. In this work, we perform a thorough exploration of the anomalous lattice dynamics and conduct a renewed assignment of the numerous double resonant Raman modes of MoS_(2) monolayer. At three laser energies(E_L= 2.33, 3.50, and 4.66 e V) spanning from the visible to the ultraviolet and further into the DUV region, the calculated double-resonance Raman spectra correlate reasonably well with the experimental ones in terms of both peak positions and relative intensities. We confirm that the P_1 peak at ~450 cm^(-1) represents the second-order longitudinal acoustic(2LA) overtone mode. Each of the P_i(i = 1, 2,..., 7) peaks has multiple contributions from two phonons with distinct q wavevectors. Our calculations further reveal that the DUV laser-induced anomalous lattice dynamics stems from the quantum interference effect among different Raman scattering channels.展开更多
As a promising candidate,the fluorooxoborate has enkindled new explorations of nonlinear optical materials to meet the deep-ultraviolet criteria.However,big challenges and open questions still remain facing this excit...As a promising candidate,the fluorooxoborate has enkindled new explorations of nonlinear optical materials to meet the deep-ultraviolet criteria.However,big challenges and open questions still remain facing this exciting new field,especially the birefringence and dispersion of refractive index which are fundamental parameters for determining the phasematching second harmonic generation wavelength.Here we designed possible anionic groups in fluorooxoborates,and analyzed the optical anisotropy to check its influence on birefringence,which was proved further by the response electronic distribution anisotropy approximation.The functional modules modulating birefringence in fluorooxoborates were explored systematically.We developed an approach for evaluating the behavior of the refractive index dispersions and found that the fluorooxoborates had small refractive index dispersions owing to the introduction of fluorooxoborate modules.Our results demonstrate that fluorooxoborates can be utilized to realize short phase-matching wavelength markedly and offer a path toward novel performance-driven materials design.展开更多
This paper reviews and introduces the techniques for boosting the light-extraction efficiency(LEE) of AlGaNbased deep-ultraviolet(DUV: λ < 300 nm) light-emitting diodes(LEDs) on the basis of the discussion of thei...This paper reviews and introduces the techniques for boosting the light-extraction efficiency(LEE) of AlGaNbased deep-ultraviolet(DUV: λ < 300 nm) light-emitting diodes(LEDs) on the basis of the discussion of their molecular structures and optical characteristics, focusing on organoencapsulation materials. Comparisons of various fluororesins, silicone resin, and nonorgano materials are described. The only usable organomaterial for encapsulating DUV-LEDs is currently considered to be polymerized perfluoro(4-vinyloxy-1-butene)(p-BVE)terminated with a —CF3 end group. By forming hemispherical lenses on DUV-LED dies using p-BVE having a —CF3 end group with a refractive index of about 1.35, the LEE was improved by 1.5-fold, demonstrating a cost-feasible packaging technique.展开更多
Deep-ultraviolet(DUV)nonlinear optical(NLO)crystal is indispensable in current DUV all-solid-state laser technology,which is the key device to generate DUV light by frequency conversion.Due to stringent criteria,DUV N...Deep-ultraviolet(DUV)nonlinear optical(NLO)crystal is indispensable in current DUV all-solid-state laser technology,which is the key device to generate DUV light by frequency conversion.Due to stringent criteria,DUV NLO crystals are scarce and their discovery faces a big challenge.Although KBe2BO3F2(KBBF)is already excellent for current uses,the development of DUV science requires the materials with shorter output wavelengths and larger NLO effects,so as to meet the needs of DUV lasers with higher precision and higher power.Therefore,how to efficiently design DUV NLO materials has always been the core issue in NLO materials science.Looking back on the development of NLO materials,it turns out that theoretical modeling and simulation is an effective and efficient method,not only for mechanism understandings,but also for experimental exploration.In this article,in order to accelerate the process of DUV materials discovery,we summarize and propose a powerful computeraided modeling system and design blueprint that can be used to evaluate the DUV NLO performance in a faster way than pure experiments.With this in hand,we enrich the understanding of NLO structure-property correlation,and systematically prospect the DUV NLO properties on the basis of many existing and designed structures according to different structural types and chemical compositions.Seven novel structures are predicted for the first time to exhibit potential DUV NLO capabilities.All the results enable us to believe that the computer-aided modeling blueprint will play an important role in the exploration of new DUV NLO crystals.展开更多
We report the experimental demonstration of fluorescence of CdSe quantum dots with surface plasmon excitation in deep-ultraviolet （deep-UV） region. Surface plasmon resonance in deep-UV is excited by aluminum thin fi...We report the experimental demonstration of fluorescence of CdSe quantum dots with surface plasmon excitation in deep-ultraviolet （deep-UV） region. Surface plasmon resonance in deep-UV is excited by aluminum thin film in the Kretschmann-Raether geometry. Considering the oxidation thickness of aluminum, the experimental results of incident angle dependence of reflectance show good agreement with Fresnel theory. Surface plasmon resonance with 19 nm-thick aluminum and 5 nm-thick almnina was excited at the incident angle of 48 degrees for 266 nm excitation. Fluorescence of CdSe quantum dots coated on this aluminum film was observed by the surface plasmon excitation.展开更多
Deep-ultraviolet(UV)nonlinear optical(NLO)crystals with excellent performances are of great importance in laser science and technology.However,to design and synthesize an ideal deep-UV NLO material with a balance betw...Deep-ultraviolet(UV)nonlinear optical(NLO)crystals with excellent performances are of great importance in laser science and technology.However,to design and synthesize an ideal deep-UV NLO material with a balance between second harmonic generation(SHG)response and UV cut-off edge is still a huge challenge.Herein,a new oxy-borate BaYOBO_(3)(BaYBO)was designed and synthesized by substituting Be^(2+)with Y^(3+)from Sr_(2)Be_(2)B_(2(O_(7).The BaYBO features a stable three-dimensional framework and satisfies the property balance between a large SHG response(~2.6×KH_(2)PO_(4)KDP))and a short UV cut-off edge(<190 nm)as a promising deep-UV NLO candidate.The study of structure-property relationship indicates that the large SHG response of BaYBO is mainly attributed to the coplanar arrangement and large number density of BO_(3 )triangles.These results demonstrate that substituting Be^(2+)with Y^(3+)cations is also a feasible strategy for developing new deep-UV NLO crystals.展开更多
By the combination of the isolated P2O7 dimers and Mg O4 tetrahedra,α-andβ-Rb2Mg3(P2O7)2 polymorphs were synthesized by a high-temperature solution method.α-Rb2Mg3(P2O7)2 crystallizes in non-centrosymmetric space g...By the combination of the isolated P2O7 dimers and Mg O4 tetrahedra,α-andβ-Rb2Mg3(P2O7)2 polymorphs were synthesized by a high-temperature solution method.α-Rb2Mg3(P2O7)2 crystallizes in non-centrosymmetric space group P212121,whileβ-Rb2Mg3(P2O7)2 crystallizes in centrosymmetric P21/c.Both structures contain a three dimensional[Mg3P4O14]^2- anionic framework,while Rb^+ cations are in the space.Structure analyses show that the isolated P2O7 dimers can easily adjust their variable configurations and orientations to fit the different coordination environments of the cations,which is conducive to the formation of polymorphs.The phase transformation process fromα-toβ-Rb2Mg3(P2O7)2 was further investigated by powder X-ray diffraction and thermal gravimetric/differential scanning calorimetry measurements.In addition,UV-vis-NIR diffusion spectra indicate both materials have deep-ultraviolet cut-off edges(below 190 nm).α-Rb2Mg3(P2O7)2 is second-harmonic generation(SHG)-active and the origin of SHG response was investigated by the SHG density calculations.The first-principle calculations were also carried out to illuminate their structure-property relationships.展开更多
A new deep-ultraviolet(DUV)birefringent crystal,LiB_(5)O_(5)F_(2)(OH)_(4)(LBOFH),was designed and synthesized by a high-temperature solution method.Its structure features a[B_(5)O_(5)F_(2)(OH)_(4)]anionic group that i...A new deep-ultraviolet(DUV)birefringent crystal,LiB_(5)O_(5)F_(2)(OH)_(4)(LBOFH),was designed and synthesized by a high-temperature solution method.Its structure features a[B_(5)O_(5)F_(2)(OH)_(4)]anionic group that is constructed by four π-conjugated units,i.e.,two[BO_(3)]units and two[BO(OH)_(2)]units connected by the[BO_(2)F_(2)]unit,which forms a near-coplanar configuration.The group exhibits large anisotropic polarizability and highest unoccupied molecular orbital-lowest unoccupied molecular orbital(HUMO-LUMO)gap,thus providing a good balance between the large birefringence(0.124 at 546 nm)and band gap(7.99 eV)in LBOFH.This work suggests new possibilities for the design and fabrication of advanced DUV birefringent crystals using the novel anionic group and the expansion of their alternative system with new hydroxyfluorooxoborates.展开更多
基金financial support from the King Abdulaziz City for Science and Technology (KACST) under grant no. KACST TIC R2-FP-008partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding no. BAS/1/1614-01-01MBE equipment funding no. C/M-20000-12-001-77 and KCR/1/4055-01-01
文摘Progress in the design and fabrication of ultraviolet and deep-ultraviolet groupⅢ–nitride optoelectronic devices,based on aluminum gallium nitride and boron nitride and their alloys,and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed.We emphasize wide-bandgap nitride compound semiconductors(i.e.,(B,Al,Ga)N)as the deep-ultraviolet materials of interest,and two-dimensional materials,namely graphene,two-dimensional boron nitride,and two-dimensional transition metal dichalcogenides,along with gallium oxide,as the hybrid integrated materials.We examine their crystallographic properties and elaborate on the challenges that hinder the realization of efficient and reliable ultraviolet and deep-ultraviolet devices.In this article we provide an overview of aluminum nitride,sapphire,and gallium oxide as platforms for deep-ultraviolet optoelectronic devices,in which we criticize the status of sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on aluminum nitride and gallium oxide substrates.A critical review of the current status of deep-ultraviolet light emission and detection materials and devices is provided.
基金Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China(Grant No.61425021)the Natural Natural Science Foundation of China(Grant Nos.11374296,61376054,61475153,and 61604132)
文摘Deep-ultraviolet（DUV） light-emitting devices（LEDs） have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-performance DUV LEDs.To realize such optoelectronic devices,the modulation of the bandgap is required.This has been demonstrated by the developments of Mg_xZn_（1-x）O and Be_xZn_（1-x）O alloys for the larger bandgap materials.Many efforts have been made to obtain DUV LEDs,and promising successes have been achieved continuously.In this article,we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.
基金Project supported by the Research Innovation Fund for College Students of Beijing University of Posts and Telecommunications(Grant No.202002046)the National Natural Science Foundation of China(Grant No.61804012).
文摘A graphene/AlGaN deep-ultraviolet(UV)photodetector is presented with ultrahigh responsivity of 3.4×105 A/W at 261 nm incident wavelength and 149 pW light power.A gain mechanism based on electron trapping at the potential well is proposed to be responsible for the high responsivity.To optimize the trade-off between responsivity and response speed,a back-gate electrode is designed at the AlGaN/GaN two-dimensional electron gas(2DEG)area which eliminates the persistent photocurrent effect and shortens the recovery time from several hours to milliseconds.The 2DEG gate is proposed as an alternative way to apply the back gate electrode on AlGaN based devices on insulating substrates.This work sheds light on a possible way for weak deep-UV light detection.
基金supported by the State Key Program for Basic Research of China (Grant No. 2010CB630706)National High Technology Research and Development Program of Chinathe National Natural Science Foundation of China (Grant No. 61138004)
文摘We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti：sapphire laser. A β-BaB2O4 walk-off compensation configuration and a KBe2BO3F2 prism-coupled device are adopted for the generation of second harmonic and fourth harmonics, respectively. The highest power is 3.72 mW at 193 nm, and the fluctuation at 2.85 mW in 130 rain is less than ±2%.
基金supported by the National Natural Science Foundation of China(Grant Nos.11104079 and 61378033)the National Key Scientific Instrument Project of China(Grant No.2012YQ150092)+1 种基金the Research Foundation for the Doctoral Program of Higher Education of China(Grant No.20110076120019)the State Key Laboratory of Luminescent Materials and Devices at South China University of Technology
文摘The localized surface plasmon resonance properties of Al and Alcore/Al2O3shell nanosphere dimers with Al and Al core nanosphere radii of 20 nm and Al2O3 shell of 2 nm in the deep-ultraviolet region have been studied using the finite difference time domain method. The extinction spectra and the electric field distribution profiles of the two dimers for various gap distances between two individual nanospheres are compared with those of the corresponding monomers to reveal the extent of plasmon coupling. It is found that with the interparticle distance decreasing, a strong plasmon coupling between two Al or Alcore/Al2O3shell nanospheres is observed accompanied by a significant red shift in the extinction spectra at the parallel polarization direction of the incident light related to the dimer axis, while for the case of the perpendicular polarization direction, a weak plasmon coupling arises characterized by a slight blue shift in the extinction spectra. The electric field distribution profiles show that benefiting from the dielectric Al2O3 shell, the gap distance of Alcore/Al2O3shell nanosphere dimers can be tailored to 〈 1 nm scale and results in a very high electric field enhancement. The estimated surface-enhanced Raman scattering enhancement factors suggests that the Alcore/Al2O3shell nanosphere dimers with the gap of 〈 1 nm gave rise to an enhancement as high as 8.1 × 10^7 for interparticle gap = 0.5 nm. Our studies reveal that the Alcore/Al2O3shell nanosphere dimers may be promising substrates for surface-enhanced spectroscopy in the deep-ultraviolet region.
基金Project supported by the Strategic Priority Research Program of CAS (Grant No. XDB0460000)the National Natural Science Foundation of China (Grant Nos. 12404213, 52031014, and 51702146)the National Key Research and Development Program of China (Grant No. 2022YFA1203900)。
文摘MoS_(2) monolayer, as a highly promising two-dimensional semiconducting material for electronic and optoelectronic applications, exhibits deep-ultraviolet(DUV) laser-induced anomalous lattice dynamics as revealed by Raman spectroscopy. Remarkably, not only the Raman intensity of many second-order Raman peaks but also the intensity ratio between the first-order modes E′and A′_1 exhibits a non-monotonic behavior that depends on laser energy. Moreover, there are significant inconsistencies in the literature regarding the assignments of these second-order Raman modes. In this work, we perform a thorough exploration of the anomalous lattice dynamics and conduct a renewed assignment of the numerous double resonant Raman modes of MoS_(2) monolayer. At three laser energies(E_L= 2.33, 3.50, and 4.66 e V) spanning from the visible to the ultraviolet and further into the DUV region, the calculated double-resonance Raman spectra correlate reasonably well with the experimental ones in terms of both peak positions and relative intensities. We confirm that the P_1 peak at ~450 cm^(-1) represents the second-order longitudinal acoustic(2LA) overtone mode. Each of the P_i(i = 1, 2,..., 7) peaks has multiple contributions from two phonons with distinct q wavevectors. Our calculations further reveal that the DUV laser-induced anomalous lattice dynamics stems from the quantum interference effect among different Raman scattering channels.
基金supported by the National Natural Science Foundation of China(51922014,11774414,51972336 and 61835014)the Key Research Program of Frontier Sciences,CAS(ZDBSLY-SLH035)+2 种基金Tianshan Innovation Team Program(2018D14001)the Western Light Foundation of CAS(Y92S191301)Fujian Institute of Innovation,CAS。
文摘As a promising candidate,the fluorooxoborate has enkindled new explorations of nonlinear optical materials to meet the deep-ultraviolet criteria.However,big challenges and open questions still remain facing this exciting new field,especially the birefringence and dispersion of refractive index which are fundamental parameters for determining the phasematching second harmonic generation wavelength.Here we designed possible anionic groups in fluorooxoborates,and analyzed the optical anisotropy to check its influence on birefringence,which was proved further by the response electronic distribution anisotropy approximation.The functional modules modulating birefringence in fluorooxoborates were explored systematically.We developed an approach for evaluating the behavior of the refractive index dispersions and found that the fluorooxoborates had small refractive index dispersions owing to the introduction of fluorooxoborate modules.Our results demonstrate that fluorooxoborates can be utilized to realize short phase-matching wavelength markedly and offer a path toward novel performance-driven materials design.
文摘This paper reviews and introduces the techniques for boosting the light-extraction efficiency(LEE) of AlGaNbased deep-ultraviolet(DUV: λ < 300 nm) light-emitting diodes(LEDs) on the basis of the discussion of their molecular structures and optical characteristics, focusing on organoencapsulation materials. Comparisons of various fluororesins, silicone resin, and nonorgano materials are described. The only usable organomaterial for encapsulating DUV-LEDs is currently considered to be polymerized perfluoro(4-vinyloxy-1-butene)(p-BVE)terminated with a —CF3 end group. By forming hemispherical lenses on DUV-LED dies using p-BVE having a —CF3 end group with a refractive index of about 1.35, the LEE was improved by 1.5-fold, demonstrating a cost-feasible packaging technique.
基金supported by the National Natural Science Foundation of China(NSFC 51872297,51890864,11574024)NSAF(U1930402)+1 种基金support from outstanding member in Youth Innovation Promotion Association at the Chinese Academy of Sciences(CAS)Fujian Institute of Innovation(FJCXY18010201)in CAS。
文摘Deep-ultraviolet(DUV)nonlinear optical(NLO)crystal is indispensable in current DUV all-solid-state laser technology,which is the key device to generate DUV light by frequency conversion.Due to stringent criteria,DUV NLO crystals are scarce and their discovery faces a big challenge.Although KBe2BO3F2(KBBF)is already excellent for current uses,the development of DUV science requires the materials with shorter output wavelengths and larger NLO effects,so as to meet the needs of DUV lasers with higher precision and higher power.Therefore,how to efficiently design DUV NLO materials has always been the core issue in NLO materials science.Looking back on the development of NLO materials,it turns out that theoretical modeling and simulation is an effective and efficient method,not only for mechanism understandings,but also for experimental exploration.In this article,in order to accelerate the process of DUV materials discovery,we summarize and propose a powerful computeraided modeling system and design blueprint that can be used to evaluate the DUV NLO performance in a faster way than pure experiments.With this in hand,we enrich the understanding of NLO structure-property correlation,and systematically prospect the DUV NLO properties on the basis of many existing and designed structures according to different structural types and chemical compositions.Seven novel structures are predicted for the first time to exhibit potential DUV NLO capabilities.All the results enable us to believe that the computer-aided modeling blueprint will play an important role in the exploration of new DUV NLO crystals.
文摘We report the experimental demonstration of fluorescence of CdSe quantum dots with surface plasmon excitation in deep-ultraviolet （deep-UV） region. Surface plasmon resonance in deep-UV is excited by aluminum thin film in the Kretschmann-Raether geometry. Considering the oxidation thickness of aluminum, the experimental results of incident angle dependence of reflectance show good agreement with Fresnel theory. Surface plasmon resonance with 19 nm-thick aluminum and 5 nm-thick almnina was excited at the incident angle of 48 degrees for 266 nm excitation. Fluorescence of CdSe quantum dots coated on this aluminum film was observed by the surface plasmon excitation.
基金supported by the National Natural Science Foundation of China(51972230,22071179,51890864,61835014,51802217,51890865)the Natural Science Foundation of Tianjin(20JCJQJC00060,19JCZDJC38200)+1 种基金Tianjin Science and Technology Plan Program(19ZYPTJC00070)the National Key R&D Program of China(2016YFB0402103)。
文摘Deep-ultraviolet(UV)nonlinear optical(NLO)crystals with excellent performances are of great importance in laser science and technology.However,to design and synthesize an ideal deep-UV NLO material with a balance between second harmonic generation(SHG)response and UV cut-off edge is still a huge challenge.Herein,a new oxy-borate BaYOBO_(3)(BaYBO)was designed and synthesized by substituting Be^(2+)with Y^(3+)from Sr_(2)Be_(2)B_(2(O_(7).The BaYBO features a stable three-dimensional framework and satisfies the property balance between a large SHG response(~2.6×KH_(2)PO_(4)KDP))and a short UV cut-off edge(<190 nm)as a promising deep-UV NLO candidate.The study of structure-property relationship indicates that the large SHG response of BaYBO is mainly attributed to the coplanar arrangement and large number density of BO_(3 )triangles.These results demonstrate that substituting Be^(2+)with Y^(3+)cations is also a feasible strategy for developing new deep-UV NLO crystals.
基金financially supported by the National Natural Science Foundation of China (51972230, 51802217, 61835014, 51890864 and 51890865)the Natural Science Foundation of Tianjin (19JCZDJC38200)the National Key Research and Development Project (2016YFB0402103)
文摘By the combination of the isolated P2O7 dimers and Mg O4 tetrahedra,α-andβ-Rb2Mg3(P2O7)2 polymorphs were synthesized by a high-temperature solution method.α-Rb2Mg3(P2O7)2 crystallizes in non-centrosymmetric space group P212121,whileβ-Rb2Mg3(P2O7)2 crystallizes in centrosymmetric P21/c.Both structures contain a three dimensional[Mg3P4O14]^2- anionic framework,while Rb^+ cations are in the space.Structure analyses show that the isolated P2O7 dimers can easily adjust their variable configurations and orientations to fit the different coordination environments of the cations,which is conducive to the formation of polymorphs.The phase transformation process fromα-toβ-Rb2Mg3(P2O7)2 was further investigated by powder X-ray diffraction and thermal gravimetric/differential scanning calorimetry measurements.In addition,UV-vis-NIR diffusion spectra indicate both materials have deep-ultraviolet cut-off edges(below 190 nm).α-Rb2Mg3(P2O7)2 is second-harmonic generation(SHG)-active and the origin of SHG response was investigated by the SHG density calculations.The first-principle calculations were also carried out to illuminate their structure-property relationships.
基金supported by the National Natural Science Foundation of China(61875229 and 61922084)the Key Research Project of Frontier Science of CAS(QYZDB-SSW-JSC049)+1 种基金the West Light Foundation of CAS(2020-JCTD-002)the Instrument Developing Project of CAS(GJJSTD20200007)。
文摘A new deep-ultraviolet(DUV)birefringent crystal,LiB_(5)O_(5)F_(2)(OH)_(4)(LBOFH),was designed and synthesized by a high-temperature solution method.Its structure features a[B_(5)O_(5)F_(2)(OH)_(4)]anionic group that is constructed by four π-conjugated units,i.e.,two[BO_(3)]units and two[BO(OH)_(2)]units connected by the[BO_(2)F_(2)]unit,which forms a near-coplanar configuration.The group exhibits large anisotropic polarizability and highest unoccupied molecular orbital-lowest unoccupied molecular orbital(HUMO-LUMO)gap,thus providing a good balance between the large birefringence(0.124 at 546 nm)and band gap(7.99 eV)in LBOFH.This work suggests new possibilities for the design and fabrication of advanced DUV birefringent crystals using the novel anionic group and the expansion of their alternative system with new hydroxyfluorooxoborates.
