In this paper, crust medium is treated as Maxwell medium, and crust model includes hard inclusion, soft inclusion,deep-level fault. The stress concentration and its evolution with time are obtained by using three-dime...In this paper, crust medium is treated as Maxwell medium, and crust model includes hard inclusion, soft inclusion,deep-level fault. The stress concentration and its evolution with time are obtained by using three-dimensional finite element method and differential method. The conclusions are drawn as follows:①The average stress concentration and maximum shear stress concentration caused by non-heterogeneous of crust are very high in hard inclusion and around the deep fault. With the time passing by, the concentration of average stress in the model gradually trends to uniform. At the same time, the concentration of maximum shear stress in hard inclusion increases gradually. This character is favorable to transfer shear strain energy from soft inclusion to hard inclusion. ② When the upper mantle beneath the inclusion upheave at a certain velocity of 1 cm/a the changes of average stress concentration with time become complex, and the boundary of the hard and soft inclusion become unconspicuous, but the maximum shear stress concentration increases much more in the hard inclusion with time at a higher velocity. This feature make for transformation of energy from the soft inclusion to the hard inclusion. @ The changes of average stress concentration and maximum shear stress concentration with time around the deep-level fault result in further accumulation of maximum shear stress concentration and finally cause the deep-level fault instable and accelerated creep along fault direction. ④ The changes of vertical displacement on the surface of the model, which is caused by the accelerated creep of the deep-level fault, is similar to that of the observation data before Xingtai strong earthquake.展开更多
AgCrSe2-based compounds have attracted much attention as an environmentally friendly thermoelectric material in recent years due to the intriguing liquid-like properties.However,the ultra-low carrier concentration and...AgCrSe2-based compounds have attracted much attention as an environmentally friendly thermoelectric material in recent years due to the intriguing liquid-like properties.However,the ultra-low carrier concentration and the high Ag_(Cr)deep-level defects limit the overall thermoelectric performance.Here,we successfully introduced Pb into Ag-deficient Ag_(0.97)CrSe_(2) alloys to tune the carrier concentration across a broad temperature range.The Pb^(2+) as an acceptor dopant preferentially occupies Cr sites,boosting the hole carrier concentration to 1.77×10^(19) cm^(-3) at room temperature.Furthermore,the Pb strongly inhibits the creation of intrinsic Ag_(Cr) defects,weakens the increased thermal excited ionization with the increasing temperature and slowed the rising trend of the carrier concentration.The designed carrier concentration matches the theoretically predicted optimized one over the entire temperature range,leading to a remarkable enhancement in power factor,especially the maximum power factor of ~500 μW·m^(-1)·K^(-2) at 750 K is superior to most previous results.Additionally,the abundant point defects promote phonon scattering,thus reducing the lattice thermal conductivity.As a result,the maximum figure of merit zT(~0.51 at 750 K) is achieved in Ag_(0.97)Cr_(0.995)Pb_(0.005)Se_(2).This work confirms the feasibility of manipulating deep-level defects to achieve temperature-dependent optimal carrier concentration and provides a valuable guidance for other thermoelectric materials.展开更多
On the basis of ANSYS finite element model(FEM) software, the deep-level rockburst in Fuxin coalfield was simulated numerically. Based on Haizhou Mine and Wulong Mine as two typical deep-level rockburst examples in Fu...On the basis of ANSYS finite element model(FEM) software, the deep-level rockburst in Fuxin coalfield was simulated numerically. Based on Haizhou Mine and Wulong Mine as two typical deep-level rockburst examples in Fuxin coalfield, the rules and characteristics of the deep-level rockburst were analyzed. And the models were es- tablished. For Haizhou mine, the relationship between mining distance and rockburst was presented when 100, 300, 600 m were mined in 3313 working face. When 300 m were mined, the rockburst began to emerge. When 600 m were mined, the rockburst was the most possible to happen and the compression stress of the working face reached to the maximum value. The effect of tectonic stress on synclinal axis is also a key factor to rockburst occurrence. This was verified by the rockburst happened when 496 m were mined. For Wulong mine, based on the 311 working face as an example, the contours of Y stress in the roof and floor were obtained when the mining distance were 100, 200, 300 and 400 m. When 100 and 400 m were mined, the high stress con- centration regions occurred in the front of working face. This shows the rockburst is easy to happen. It is confirmed by the rockburst when 91m were mined in 311 working plane. The above indicates that the numerical simulation has instructive rule to study the deep-level rockburst in Fuxin coalfield.展开更多
The influence of a deep-level-defect（DLD） band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN（p^＋＋-GaN） contact layer w...The influence of a deep-level-defect（DLD） band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN（p^＋＋-GaN） contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping（VRH） transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p^＋＋-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p^＋＋-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97×10^-4Ω·cm^2 is achieved.展开更多
Defect engineering is pivotal in comprehending physical mechanisms that govern carrier transport and device performance.The defect evolution and carrier manipulation in Sn-doped Ga_(2)O_(3)bulk crystals subjected to d...Defect engineering is pivotal in comprehending physical mechanisms that govern carrier transport and device performance.The defect evolution and carrier manipulation in Sn-doped Ga_(2)O_(3)bulk crystals subjected to different thermal treatments were investigated,utilizing depth-profiled deep-level transient spectroscopy(DLTS)and frequency-dependent capacitance-voltage(C-V-f)techniques.In untreated Sn-doped Ga_(2)O_(3)with an electron concentration of 6.37×10^(17)cm^(−3),two dominant electron traps,E_(T1)(E_(C)−0.68 eV)and E_(T2)(E_(C)−0.76 eV),were identified,corresponding to gallium vacancy(V_(Ga))and the neutral complex of V_(Ga)-V_(O),respectively,and characterized as bulk traps.Fe Ga-related defects,E_(T3)(E_(C)−0.84 eV),were concentrated near surface.Nitrogen annealing significantly reduced E_(T1),increased E_(T2)density from 6.13×10^(15)to 1.1×10^(16)cm^(−3),and raised the interfacial state density(D_(it))to 3.36×10^(15)eV^(−1)cm^(−2),accompanied by an elevated electron concentration of 7.48×10^(18)cm^(−3).In contrast,air annealing enhanced E_(T1),with a density of 1.42×10^(16)cm^(−3),suppressed of E_(T2)/E_(T3)traps,resulting in a lower D_(it)of 1.74×10^(14)eV^(−1)cm^(−2),and a reduced electron concentration to 3.01×10^(16)cm^(−3).The findings reveal that a reducing environment induces V_(O)formation and converts discrete V_(Ga)acceptors into neutral V_(Ga)-V_(O)complexes,leading to downward surface band bending and electron accumulation.Conversely,V_(Ga)-V_(O)complexes are dissociated into V_(Ga)acceptors in oxidizing conditions,leading to an upward surface band bending and electron compensation.This work underscores the carrier concentration manipulation by defect engineering in Ga_(2)O_(3),offering insights essential for developing high-performance gallium oxide electronics.展开更多
The deep-level defects of Cd Zn Te（CZT）crystals grown by the modified vertical Bridgman（MVB）method act as trapping centers or recombination centers in the band gap,which have significant effects on its electrical ...The deep-level defects of Cd Zn Te（CZT）crystals grown by the modified vertical Bridgman（MVB）method act as trapping centers or recombination centers in the band gap,which have significant effects on its electrical properties.The resistivity and electron mobility–lifetime product of high resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT1 and low resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT2 were tested respectively.Their deep-level defects were identified by thermally stimulated current（TSC）spectroscopy and thermoelectric effect spectroscopy（TEES）respectively.Then the trap-related parameters were characterized by the simultaneous multiple peak analysis（SIMPA）method.The deep donor level（EDD/dominating dark current was calculated by the relationship between dark current and temperature.The Fermi-level was characterized by current–voltage measurements of temperature dependence.The width of the band gap was characterized by ultraviolet-visible-infrared transmittance spectroscopy.The results show the traps concentration and capture cross section of CZT1 are lower than CZT2,so its electron mobility–lifetime product is greater than CZT2.The Fermi-level of CZT1 is closer to the middle gap than CZT2.The degree of Fermi-level pinned by EDDof CZT1 is larger than CZT2.It can be concluded that the resistivity of CZT crystals increases as the degree of Fermi-level pinned near the middle gap by the deep donor level enlarges.展开更多
文摘In this paper, crust medium is treated as Maxwell medium, and crust model includes hard inclusion, soft inclusion,deep-level fault. The stress concentration and its evolution with time are obtained by using three-dimensional finite element method and differential method. The conclusions are drawn as follows:①The average stress concentration and maximum shear stress concentration caused by non-heterogeneous of crust are very high in hard inclusion and around the deep fault. With the time passing by, the concentration of average stress in the model gradually trends to uniform. At the same time, the concentration of maximum shear stress in hard inclusion increases gradually. This character is favorable to transfer shear strain energy from soft inclusion to hard inclusion. ② When the upper mantle beneath the inclusion upheave at a certain velocity of 1 cm/a the changes of average stress concentration with time become complex, and the boundary of the hard and soft inclusion become unconspicuous, but the maximum shear stress concentration increases much more in the hard inclusion with time at a higher velocity. This feature make for transformation of energy from the soft inclusion to the hard inclusion. @ The changes of average stress concentration and maximum shear stress concentration with time around the deep-level fault result in further accumulation of maximum shear stress concentration and finally cause the deep-level fault instable and accelerated creep along fault direction. ④ The changes of vertical displacement on the surface of the model, which is caused by the accelerated creep of the deep-level fault, is similar to that of the observation data before Xingtai strong earthquake.
基金Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0702100and 2022YFB3803900)the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences (CAS)’ Large-Scale Scientific Facility (Grant No. U1932106)the Sichuan University Innovation Research Program of China (Grant No. 2020SCUNL112)。
文摘AgCrSe2-based compounds have attracted much attention as an environmentally friendly thermoelectric material in recent years due to the intriguing liquid-like properties.However,the ultra-low carrier concentration and the high Ag_(Cr)deep-level defects limit the overall thermoelectric performance.Here,we successfully introduced Pb into Ag-deficient Ag_(0.97)CrSe_(2) alloys to tune the carrier concentration across a broad temperature range.The Pb^(2+) as an acceptor dopant preferentially occupies Cr sites,boosting the hole carrier concentration to 1.77×10^(19) cm^(-3) at room temperature.Furthermore,the Pb strongly inhibits the creation of intrinsic Ag_(Cr) defects,weakens the increased thermal excited ionization with the increasing temperature and slowed the rising trend of the carrier concentration.The designed carrier concentration matches the theoretically predicted optimized one over the entire temperature range,leading to a remarkable enhancement in power factor,especially the maximum power factor of ~500 μW·m^(-1)·K^(-2) at 750 K is superior to most previous results.Additionally,the abundant point defects promote phonon scattering,thus reducing the lattice thermal conductivity.As a result,the maximum figure of merit zT(~0.51 at 750 K) is achieved in Ag_(0.97)Cr_(0.995)Pb_(0.005)Se_(2).This work confirms the feasibility of manipulating deep-level defects to achieve temperature-dependent optimal carrier concentration and provides a valuable guidance for other thermoelectric materials.
基金Supported by National Nature Science Foundation of China (50490275)
文摘On the basis of ANSYS finite element model(FEM) software, the deep-level rockburst in Fuxin coalfield was simulated numerically. Based on Haizhou Mine and Wulong Mine as two typical deep-level rockburst examples in Fuxin coalfield, the rules and characteristics of the deep-level rockburst were analyzed. And the models were es- tablished. For Haizhou mine, the relationship between mining distance and rockburst was presented when 100, 300, 600 m were mined in 3313 working face. When 300 m were mined, the rockburst began to emerge. When 600 m were mined, the rockburst was the most possible to happen and the compression stress of the working face reached to the maximum value. The effect of tectonic stress on synclinal axis is also a key factor to rockburst occurrence. This was verified by the rockburst happened when 496 m were mined. For Wulong mine, based on the 311 working face as an example, the contours of Y stress in the roof and floor were obtained when the mining distance were 100, 200, 300 and 400 m. When 100 and 400 m were mined, the high stress con- centration regions occurred in the front of working face. This shows the rockburst is easy to happen. It is confirmed by the rockburst when 91m were mined in 311 working plane. The above indicates that the numerical simulation has instructive rule to study the deep-level rockburst in Fuxin coalfield.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61474110,61377020,61376089,61223005,and 61176126)the National Science Fund for Distinguished Young Scholars of China(Grant No.60925017)+1 种基金One Hundred Person Project of the Chinese Academy of Sciencesthe Basic Research Project of Jiangsu Province,China(Grant No.BK20130362)
文摘The influence of a deep-level-defect（DLD） band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN（p^＋＋-GaN） contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping（VRH） transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p^＋＋-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p^＋＋-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97×10^-4Ω·cm^2 is achieved.
基金supported by the National Key R&D Program of China(2022YFB3605403)the Provincial Science and Technology Major Project of Jiangsu(BG2024030)the National Natural Science Foundation of China(62425403,62234007,62293521,U21A20503,U21A2071,62004183).
文摘Defect engineering is pivotal in comprehending physical mechanisms that govern carrier transport and device performance.The defect evolution and carrier manipulation in Sn-doped Ga_(2)O_(3)bulk crystals subjected to different thermal treatments were investigated,utilizing depth-profiled deep-level transient spectroscopy(DLTS)and frequency-dependent capacitance-voltage(C-V-f)techniques.In untreated Sn-doped Ga_(2)O_(3)with an electron concentration of 6.37×10^(17)cm^(−3),two dominant electron traps,E_(T1)(E_(C)−0.68 eV)and E_(T2)(E_(C)−0.76 eV),were identified,corresponding to gallium vacancy(V_(Ga))and the neutral complex of V_(Ga)-V_(O),respectively,and characterized as bulk traps.Fe Ga-related defects,E_(T3)(E_(C)−0.84 eV),were concentrated near surface.Nitrogen annealing significantly reduced E_(T1),increased E_(T2)density from 6.13×10^(15)to 1.1×10^(16)cm^(−3),and raised the interfacial state density(D_(it))to 3.36×10^(15)eV^(−1)cm^(−2),accompanied by an elevated electron concentration of 7.48×10^(18)cm^(−3).In contrast,air annealing enhanced E_(T1),with a density of 1.42×10^(16)cm^(−3),suppressed of E_(T2)/E_(T3)traps,resulting in a lower D_(it)of 1.74×10^(14)eV^(−1)cm^(−2),and a reduced electron concentration to 3.01×10^(16)cm^(−3).The findings reveal that a reducing environment induces V_(O)formation and converts discrete V_(Ga)acceptors into neutral V_(Ga)-V_(O)complexes,leading to downward surface band bending and electron accumulation.Conversely,V_(Ga)-V_(O)complexes are dissociated into V_(Ga)acceptors in oxidizing conditions,leading to an upward surface band bending and electron compensation.This work underscores the carrier concentration manipulation by defect engineering in Ga_(2)O_(3),offering insights essential for developing high-performance gallium oxide electronics.
基金supported by the National Natural Science Foundation of China(No.51502234)the Scientific Research Plan Projects of Shaanxi Provincial Department of Education of China(No.15JS040)
文摘The deep-level defects of Cd Zn Te（CZT）crystals grown by the modified vertical Bridgman（MVB）method act as trapping centers or recombination centers in the band gap,which have significant effects on its electrical properties.The resistivity and electron mobility–lifetime product of high resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT1 and low resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT2 were tested respectively.Their deep-level defects were identified by thermally stimulated current（TSC）spectroscopy and thermoelectric effect spectroscopy（TEES）respectively.Then the trap-related parameters were characterized by the simultaneous multiple peak analysis（SIMPA）method.The deep donor level（EDD/dominating dark current was calculated by the relationship between dark current and temperature.The Fermi-level was characterized by current–voltage measurements of temperature dependence.The width of the band gap was characterized by ultraviolet-visible-infrared transmittance spectroscopy.The results show the traps concentration and capture cross section of CZT1 are lower than CZT2,so its electron mobility–lifetime product is greater than CZT2.The Fermi-level of CZT1 is closer to the middle gap than CZT2.The degree of Fermi-level pinned by EDDof CZT1 is larger than CZT2.It can be concluded that the resistivity of CZT crystals increases as the degree of Fermi-level pinned near the middle gap by the deep donor level enlarges.
