This work reports the growth and characterization of p-AlInN layers doped with Mg by plasma-assisted molecular beam epitaxy(PAMBE).AlInN was grown with an Al molar fraction of 0.80 by metal-modulated epitaxy(MME)with ...This work reports the growth and characterization of p-AlInN layers doped with Mg by plasma-assisted molecular beam epitaxy(PAMBE).AlInN was grown with an Al molar fraction of 0.80 by metal-modulated epitaxy(MME)with a thickness of 180 nm on Si(111)substrates using AlN as buffer layers.Low substrate temperatures were used to enhance the incorporation of indium atoms into the alloy without clustering,as confirmed by X-ray diffraction(XRD).Cathodoluminescence measurements revealed ultraviolet(UV)range emissions.Meanwhile,Hall effect measurements indicated a maximum hole mobility of 146 cm^(2)/(V∙s),corresponding to a free hole concentration of 1.23×10^(19)cm^(−3).The samples were analyzed by X-ray photoelectron spectroscopy(XPS)estimating the alloy composition and extracting the Fermi level by valence band analysis.Mg-doped AlInN layers were studied for use as the electron-blocking layer(EBL)in LED structures.We varied the Al composition in the EBL from 0.84 to 0.96 molar fraction to assess its theoretical effects on electroluminescence,carrier concentration,and electric field,using SILVACO Atlas.The results from this study highlight the importance and capability of producing high-quality Mg-doped p-AlInN layers through PAMBE.Our simulations suggest that an Al content of 0.86 is optimal for achieving desired outcomes in electroluminescence,carrier concentration,and electric field.展开更多
We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an...We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an ultrathin p-GaN(4 nm)ohmic contact layer capable of emitting 277 nm.The experimental results show that the external quantum efficiency(EQE)and wall plug efficiency(WPE)of the structure graded from 0.75 to 0.55 in the HIL reach 5.49%and 5.04%,which are improved significantly by 182%and 209%,respectively,compared with the structure graded from 0.75 to 0.45,exhibiting a tremendous improvement.Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL,the higher the hole concentration that should be induced;thus,the DUV-LED has a higher internal quantum efficiency(IQE).Meanwhile,as the value of x decreases,the absorption of the DUV light emitted from the active region by the HIL is enhanced,reducing the light extraction efficiency(LEE).The IQE and LEE together affect the EQE performance of DUV-LEDs.To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition,the Al composition in the HIL was optimized through theoretical calculations and experiments.展开更多
Recently ozone is one of natural hazards which comes from cars, industry using ozone for sterilization of organic and inorganic materials and for water purification. So, ozone sensing becomes very important, and conve...Recently ozone is one of natural hazards which comes from cars, industry using ozone for sterilization of organic and inorganic materials and for water purification. So, ozone sensing becomes very important, and convenient and accurate ozone sensor is required. A new high sensitivity ozone sensing system using an deep ultra-violet light emitting diode (DUV-LED) operated at the wavelength of 280 nm has been successfully constructed. The fabrication of diode operated at 280 nm is much easier than that of DUV-LED operated at Hg lamp wavelength of 254 nm. The system is compact and possible to sense the ozone concentration less than 0.1 ppm with an accuracy of 0.5% easily with low power DUV-LED of around 200 micro Watts operated at 280 nm without any data processing circuit.展开更多
文摘This work reports the growth and characterization of p-AlInN layers doped with Mg by plasma-assisted molecular beam epitaxy(PAMBE).AlInN was grown with an Al molar fraction of 0.80 by metal-modulated epitaxy(MME)with a thickness of 180 nm on Si(111)substrates using AlN as buffer layers.Low substrate temperatures were used to enhance the incorporation of indium atoms into the alloy without clustering,as confirmed by X-ray diffraction(XRD).Cathodoluminescence measurements revealed ultraviolet(UV)range emissions.Meanwhile,Hall effect measurements indicated a maximum hole mobility of 146 cm^(2)/(V∙s),corresponding to a free hole concentration of 1.23×10^(19)cm^(−3).The samples were analyzed by X-ray photoelectron spectroscopy(XPS)estimating the alloy composition and extracting the Fermi level by valence band analysis.Mg-doped AlInN layers were studied for use as the electron-blocking layer(EBL)in LED structures.We varied the Al composition in the EBL from 0.84 to 0.96 molar fraction to assess its theoretical effects on electroluminescence,carrier concentration,and electric field,using SILVACO Atlas.The results from this study highlight the importance and capability of producing high-quality Mg-doped p-AlInN layers through PAMBE.Our simulations suggest that an Al content of 0.86 is optimal for achieving desired outcomes in electroluminescence,carrier concentration,and electric field.
基金the National Natural Science Foundation of China(Grant No.62104085)the Innovation/Entrepreneurship Program of Jiangsu Province,China(Grant No.JSSCTD202146)。
文摘We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an ultrathin p-GaN(4 nm)ohmic contact layer capable of emitting 277 nm.The experimental results show that the external quantum efficiency(EQE)and wall plug efficiency(WPE)of the structure graded from 0.75 to 0.55 in the HIL reach 5.49%and 5.04%,which are improved significantly by 182%and 209%,respectively,compared with the structure graded from 0.75 to 0.45,exhibiting a tremendous improvement.Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL,the higher the hole concentration that should be induced;thus,the DUV-LED has a higher internal quantum efficiency(IQE).Meanwhile,as the value of x decreases,the absorption of the DUV light emitted from the active region by the HIL is enhanced,reducing the light extraction efficiency(LEE).The IQE and LEE together affect the EQE performance of DUV-LEDs.To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition,the Al composition in the HIL was optimized through theoretical calculations and experiments.
文摘Recently ozone is one of natural hazards which comes from cars, industry using ozone for sterilization of organic and inorganic materials and for water purification. So, ozone sensing becomes very important, and convenient and accurate ozone sensor is required. A new high sensitivity ozone sensing system using an deep ultra-violet light emitting diode (DUV-LED) operated at the wavelength of 280 nm has been successfully constructed. The fabrication of diode operated at 280 nm is much easier than that of DUV-LED operated at Hg lamp wavelength of 254 nm. The system is compact and possible to sense the ozone concentration less than 0.1 ppm with an accuracy of 0.5% easily with low power DUV-LED of around 200 micro Watts operated at 280 nm without any data processing circuit.
