A CMOS RF（radio frequency） front-end for digital radio broadcasting applications is presented that contains a wideband LNA,I/Q-mixers and VGAs,supporting other various wireless communication standards in the ultrawi...A CMOS RF（radio frequency） front-end for digital radio broadcasting applications is presented that contains a wideband LNA,I/Q-mixers and VGAs,supporting other various wireless communication standards in the ultrawide frequency band from 200 kHz to 2 GHz as well.Improvement of the NF（noise figure） and IP3（third-order intermodulation distortion） is attained without significant degradation of other performances like voltage gain and power consumption.The NF is minimized by noise-canceling technology,and the IP3 is improved by using differential multiple gate transistors（DMGTR）.The dB-in-linear VGA（variable gain amplifier） exploits a single PMOS to achieve exponential gain control.The circuit is fabricated in 0.18-μm CMOS technology.The S11 of the RF front-end is lower than -11.4 dB over the whole band of 200 kHz-2 GHz.The variable gain range is 12-42 dB at 0.25 GHz and 4-36 dB at 2 GHz.The DSB NF at maximum gain is 3.1-6.1 dB.The IIP3 at middle gain is -4.7 to 0.2 dBm.It consumes a DC power of only 36 mW at 1.8 V supply.展开更多
The wideband CMOS voltage-controlled oscillator（VCO）with low phase noise and low power consumption is presented for a DRM/DAB（digital radio mondiale and digital audio broadcasting）frequency synthesizer.In order to...The wideband CMOS voltage-controlled oscillator（VCO）with low phase noise and low power consumption is presented for a DRM/DAB（digital radio mondiale and digital audio broadcasting）frequency synthesizer.In order to obtain a wide band and a large tuning range,a parallel switched capacitor bank is added in the LC tank.The proposed VCO is implemented in SMIC 0.18-μm RF CMOS technology and the chip area is 750 μm×560 μm,including the test buffer circuit and the pads.Measured results show that the tuning range is 44.6%;i.e.,the frequency turning range is from 2.27 to 3.57 GHz.The measured phase noise is-122.22 dBc/Hz at a 1 MHz offset from the carrier.The maximum power consumption of the core part is 6.16 mW at a 1.8 V power supply.展开更多
文摘A CMOS RF（radio frequency） front-end for digital radio broadcasting applications is presented that contains a wideband LNA,I/Q-mixers and VGAs,supporting other various wireless communication standards in the ultrawide frequency band from 200 kHz to 2 GHz as well.Improvement of the NF（noise figure） and IP3（third-order intermodulation distortion） is attained without significant degradation of other performances like voltage gain and power consumption.The NF is minimized by noise-canceling technology,and the IP3 is improved by using differential multiple gate transistors（DMGTR）.The dB-in-linear VGA（variable gain amplifier） exploits a single PMOS to achieve exponential gain control.The circuit is fabricated in 0.18-μm CMOS technology.The S11 of the RF front-end is lower than -11.4 dB over the whole band of 200 kHz-2 GHz.The variable gain range is 12-42 dB at 0.25 GHz and 4-36 dB at 2 GHz.The DSB NF at maximum gain is 3.1-6.1 dB.The IIP3 at middle gain is -4.7 to 0.2 dBm.It consumes a DC power of only 36 mW at 1.8 V supply.
文摘The wideband CMOS voltage-controlled oscillator（VCO）with low phase noise and low power consumption is presented for a DRM/DAB（digital radio mondiale and digital audio broadcasting）frequency synthesizer.In order to obtain a wide band and a large tuning range,a parallel switched capacitor bank is added in the LC tank.The proposed VCO is implemented in SMIC 0.18-μm RF CMOS technology and the chip area is 750 μm×560 μm,including the test buffer circuit and the pads.Measured results show that the tuning range is 44.6%;i.e.,the frequency turning range is from 2.27 to 3.57 GHz.The measured phase noise is-122.22 dBc/Hz at a 1 MHz offset from the carrier.The maximum power consumption of the core part is 6.16 mW at a 1.8 V power supply.
