期刊文献+
共找到315篇文章
< 1 2 16 >
每页显示 20 50 100
A high output power 340 GHz balanced frequency doubler designed based on linear optimization method
1
作者 LIU Zhi-Cheng ZHOU Jing-Tao +5 位作者 MENG Jin WEI Hao-Miao YANG Cheng-Yue SU Yong-Bo JIN Zhi JIA Rui 《红外与毫米波学报》 北大核心 2025年第2期184-191,共8页
In this paper,a linear optimization method(LOM)for the design of terahertz circuits is presented,aimed at enhancing the simulation efficacy and reducing the time of the circuit design workflow.This method enables the ... In this paper,a linear optimization method(LOM)for the design of terahertz circuits is presented,aimed at enhancing the simulation efficacy and reducing the time of the circuit design workflow.This method enables the rapid determination of optimal embedding impedance for diodes across a specific bandwidth to achieve maximum efficiency through harmonic balance simulations.By optimizing the linear matching circuit with the optimal embedding impedance,the method effectively segregates the simulation of the linear segments from the nonlinear segments in the frequency multiplier circuit,substantially improving the speed of simulations.The design of on-chip linear matching circuits adopts a modular circuit design strategy,incorporating fixed load resistors to simplify the matching challenge.Utilizing this approach,a 340 GHz frequency doubler was developed and measured.The results demonstrate that,across a bandwidth of 330 GHz to 342 GHz,the efficiency of the doubler remains above 10%,with an input power ranging from 98 mW to 141mW and an output power exceeding 13 mW.Notably,at an input power of 141 mW,a peak output power of 21.8 mW was achieved at 334 GHz,corresponding to an efficiency of 15.8%. 展开更多
关键词 linear optimization method(LOM) three-dimensional electromagnetic model(3D-EM) Harmonic impedance optimization Schottky planar diode Terahertz frequency doubler
在线阅读 下载PDF
A 5.4mW and 6.1% efficiency fixed-tuned 214GHz frequency doubler with Schottky barrier diodes 被引量:4
2
作者 姚常飞 Zhou Ming +2 位作者 Luo Yunsheng Kou Yanan Li Jiao 《High Technology Letters》 EI CAS 2015年第1期85-89,共5页
A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumpe... A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model. All the matching circuit is designed "on-chip" and the mul- tiplier is self-biasing. To the doubler, a conversion efficiency of 6.1% and output power of 5.4mW are measured at 214GHz with input power of 88mW, and the typical measured efficiency is 4.5% in 200 - 225 GHz. 展开更多
关键词 frequency doubler planar schottky diode quartz substrate EFFICIENCY
在线阅读 下载PDF
The ultimate strength of doubler plate reinforced Y-joints under compression loading 被引量:1
3
作者 FENQ Qi TAN Jia-hua 《Journal of Marine Science and Application》 2005年第2期13-19,共7页
It is common practice in the offshore industry to solve the punching shear problem due to compression by using doubler plate. The finite-element method is a useful tool for studying this problem. The aim of this paper... It is common practice in the offshore industry to solve the punching shear problem due to compression by using doubler plate. The finite-element method is a useful tool for studying this problem. The aim of this paper is to study the static strength of doubler plate reinforced Y-joints subjected to compression loading. The finite-element method is adopted in numerical parametric studies. The individual influences of the geometric parameters βand τd (doubler plate to chord wall thickness ratio) and ld/d1(dubler plate length to brace diameter ratio) on the ultimate strength are made clear. The results show the size of plate may have important effects on the strength of reinforced joints. It is found that the ultimate strength of Y-joints reinforced with appropriately proportioned doubler plates can be greatly improved nearly up tothree times to un-reinforced Y-joints. 展开更多
关键词 static strength finite element analysis doubler plates reinforced joints Y-joints
在线阅读 下载PDF
基于dikson charge pump的voltage doubler设计
4
作者 盖啸尘 张海良 +1 位作者 梅金硕 田洪光 《微处理机》 2011年第3期13-15,19,共4页
随着集成电路工艺的发展,电源电压不断降低,使得charge pump在芯片上的地位更加重要。传统的voltage doubler基于开关的实现方法,由于MOS管阈值电压的影响,使得voltagedoubler的输出电压与2VDD电平相差甚远。在分析dikson charge pump... 随着集成电路工艺的发展,电源电压不断降低,使得charge pump在芯片上的地位更加重要。传统的voltage doubler基于开关的实现方法,由于MOS管阈值电压的影响,使得voltagedoubler的输出电压与2VDD电平相差甚远。在分析dikson charge pump工作原理的基础上,提出了一种新型的基于dikson charge pump的voltage doubler,通过外加电容的方法,可以实现对diksoncharge pump的输出电压进行微调,从而得到所需要的2VDD的电平。采用smic0.35μm工艺仿真后发现当VDD=5V时,传统的voltage doubler输出电平为8.54V,而dikson voltage doubler的输出电平为理想的10V。 展开更多
关键词 电荷泵 倍压器 非交叠
在线阅读 下载PDF
Generation of self-oscillations from a singly resonant periodically poled potassium titanyl phosphate crystal frequency doubler
5
作者 李渊骥 刘勤 +1 位作者 冯晋霞 张宽收 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第6期418-423,共6页
We report on the generation of self-oscillations from a continuously pumped singly resonant frequency doubler based on a periodically poled potassium titanyl phosphate crystal (PPKTP). The sustained square-wave and ... We report on the generation of self-oscillations from a continuously pumped singly resonant frequency doubler based on a periodically poled potassium titanyl phosphate crystal (PPKTP). The sustained square-wave and staircase curve of self-oscillations are obtained when the incident pump powers are below and above the threshold of subharmonic-pumped parametric oscillation (SPO), respectively. The self-oscillations can be explained by the competition between the phase shifts induced by cascading nonlinearity and thermal effect, and the influence of fundamental nonlinear phase shift by the generation of SPO. The simulation results are in good agreement with the experiment data. 展开更多
关键词 SELF-OSCILLATIONS singly resonant frequency doubler phase shift
原文传递
深紫外KBBF薄片晶体的连续波激光倍频器设计
6
作者 王晓洋 刘丽娟 《人工晶体学报》 北大核心 2025年第10期1732-1739,共8页
深紫外激光(波长<200nm)在光刻、角分辨光电子能谱、激光精密加工等前沿领域具有不可替代的应用价值。为实现实用化、高精度的深紫外激光输出,基于非线性光学晶体的多级倍频技术已成为最具可行性的方案,其极限性能由终端深紫外倍频... 深紫外激光(波长<200nm)在光刻、角分辨光电子能谱、激光精密加工等前沿领域具有不可替代的应用价值。为实现实用化、高精度的深紫外激光输出,基于非线性光学晶体的多级倍频技术已成为最具可行性的方案,其极限性能由终端深紫外倍频晶体决定。然而,目前见诸报道的深紫外非线性晶体仅有KBBF(KBe_(2)BO_(3)F_(2))和RBBF(RbBe_(2)BO_(3)F_(2))两种,且二者均受层状生长习性限制,仅能获得毫米级厚度的薄片状晶体。针对薄片状非线性光学晶体制作倍频器件的技术挑战,传统解决方案采用在晶体两面光胶两个异质材料棱镜的耦合技术。但该方案存在固有缺陷,形成的两个异质界面引入了额外光损耗,也成为激光损伤的薄弱环节,使器件的损伤阈值比晶体下降超过一个数量级。本研究创新性地提出布儒斯特角的特殊切割方法,可在保证相位匹配的前提下,使晶体获得最大有效通光长度。这种无棱镜的倍频器件摒弃了异质棱镜结构,充分发挥非线性晶体本征的高损伤阈值特性,提高了倍频器件的总透过率,为实现高功率/连续波深紫外激光输出提供了新途径。 展开更多
关键词 非线性光学晶体 深紫外 KBBF晶体 连续波激光 倍频器件 布儒斯特切割 薄片晶体
在线阅读 下载PDF
一种波导内阻抗匹配的0.4THz宽带倍频器
7
作者 胡松祥 宋旭波 +2 位作者 顾国栋 刘庆彬 冯志红 《半导体技术》 北大核心 2025年第8期822-827,共6页
为满足近场通信和成像等应用领域对0.4 THz宽带倍频器的需求,基于GaAs肖特基势垒二极管(SBD)设计了一款工作在0.4 THz的宽带平衡式二倍频器。该设计采用波导内输出阻抗匹配结构,解决了传统悬置带线设计中阻抗失配导致的带宽受限问题。... 为满足近场通信和成像等应用领域对0.4 THz宽带倍频器的需求,基于GaAs肖特基势垒二极管(SBD)设计了一款工作在0.4 THz的宽带平衡式二倍频器。该设计采用波导内输出阻抗匹配结构,解决了传统悬置带线设计中阻抗失配导致的带宽受限问题。二倍频器采用反向偏置工作模式,通过优化散射参数的相位一致性,提高了谐波合成效率。设计了0.4 THz宽带的E面探针过渡和直流偏置的集成复合结构,采用紧凑型谐振器结构低通滤波器实现悬置带线至波导的高效转换,并抑制了信号泄漏。测试结果表明,在0.37~0.43 THz工作频带内,二倍频器实现了3.4%以上的转换效率,最高转换效率达6.7%,峰值输出功率为4.4 mW,为太赫兹频段宽带二倍频器设计提供了新的解决方案。 展开更多
关键词 太赫兹 二倍频器 肖特基势垒二极管(SBD) GAAS 宽带
原文传递
基于PIN二极管的兆瓦级快速倒相开关设计
8
作者 陈良萍 殷勇 +6 位作者 江涛 秦雨 李海龙 王彬 毕亮杰 熊正锋 蒙林 《强激光与粒子束》 北大核心 2025年第9期20-26,共7页
为研究基于磁控管等电真空振荡器的低成本、小型化、稳定且可阵列化应用的SLAC能量倍增器(SLED),设计了一种功率容量兆瓦级、响应时间纳秒级的高功率快速倒相开关。在波导结构中插入传统PIN二极管加载线型移相电路单元,通过波导外置偏... 为研究基于磁控管等电真空振荡器的低成本、小型化、稳定且可阵列化应用的SLAC能量倍增器(SLED),设计了一种功率容量兆瓦级、响应时间纳秒级的高功率快速倒相开关。在波导结构中插入传统PIN二极管加载线型移相电路单元,通过波导外置偏置电路控制PIN二极管的“开”/“关”状态,改变移相电路的等效阻抗以控制波导传输微波相位。已通过高功率实验验证了此类二极管波导移相器的高功率特性。通过级联8个移相电路单元实现180°相移。对所设计的倒相开关进行了频域与时域参数测试:频域测试结果表明,该倒相开关在工作频率下的插损小于0.7 dB,在中心频率2.458 GHz处相移172°,相移量与仿真设计值相比误差在±4°以内;时域测试结果表明,该倒相开关的倒相时间约为5 ns。 展开更多
关键词 能量倍增器 脉冲压缩器 倒相开关 PIN二极管
在线阅读 下载PDF
基于开关电容与耦合电感倍压单元的高增益直流变换器
9
作者 熊振阳 尹靖元 +2 位作者 霍群海 韩立博 韦统振 《北京航空航天大学学报》 北大核心 2025年第8期2652-2662,共11页
针对激光无线能量传输系统中光伏电池阵列输出电压低,需要高增益变换器进行升压变换的问题,提出一种基于开关电容与三绕组耦合电感倍压单元的新型高增益直流变换器。该变换器将电荷泵电容、箝位电容、倍压电容与三绕组耦合电感各绕组相... 针对激光无线能量传输系统中光伏电池阵列输出电压低,需要高增益变换器进行升压变换的问题,提出一种基于开关电容与三绕组耦合电感倍压单元的新型高增益直流变换器。该变换器将电荷泵电容、箝位电容、倍压电容与三绕组耦合电感各绕组相配合,使电压均匀分配,提高变换器电压增益的同时使功率器件的电压应力显著下降。开关电容中的箝位电容实现了对功率开关管断开瞬间耦合电感漏感能量的缓冲吸收,避免尖峰电压产生的同时,实现了功率开关管的零电流导通,有助于变换器效率的提升。通过模拟仿真和实验对所提变换器工作原理和性能进行了分析验证。 展开更多
关键词 激光无线电能传输技术 高增益直流变换器 耦合电感 开关电容 倍压单元
原文传递
基于元件复用的单相无桥倍压式功率因数校正变换器
10
作者 丁明远 李浩昱 +2 位作者 赵雷 贲洪奇 王志亮 《电工技术学报》 北大核心 2025年第6期1840-1852,共13页
该文提出一类元件复用型单相无桥倍压式功率因数校正(PFC)电路拓扑,在Sepic、Cuk、Zeta型双变换单元无桥PFC拓扑的基础上,通过重构电流路径以实现双变换单元的合并,使元件利用率得以提高,同时交流侧的高功率因数特性以及相同输出电压下... 该文提出一类元件复用型单相无桥倍压式功率因数校正(PFC)电路拓扑,在Sepic、Cuk、Zeta型双变换单元无桥PFC拓扑的基础上,通过重构电流路径以实现双变换单元的合并,使元件利用率得以提高,同时交流侧的高功率因数特性以及相同输出电压下开关管的低电压应力优势被完全保留。该文详尽分析中间储能单元的换流过程以及电路结构的推衍过程,并进行拓扑的性能比较。考虑到电路工作原理分析过程的类似性,以Sepic型单相无桥倍压式PFC变换器为例,对其进行开关周期的模态分析,推导变换器的输入电流特性、稳态电压增益以及器件应力,并对相关电路参数进行设计。最后,搭建实验样机,实验结果验证了该拓扑推衍方案的可行性以及理论分析与参数设计的正确性。 展开更多
关键词 无桥功率因数校正(PFC)变换器 拓扑推衍 元件复用 倍压式结构
在线阅读 下载PDF
Well-balanced ambipolar diketopyrrolopyrrole-based copolymers for OFETs,inverters and frequency doublers 被引量:2
11
作者 Jiaxin Yang Qingqing Liu +7 位作者 Mengxiao Hu Shang Ding Jinyu Liu Yongshuai Wang Dan Liu Haikuo Gao Wenping Hu Huanli Dong 《Science China Chemistry》 SCIE EI CSCD 2021年第8期1410-1416,共7页
Conjugated polymers with well-balanced ambipolar charge transport is essential for organic circuits at low cost and large area with simplified fabrication techniques.Aiming at this point,herein,a novel asymmetric thio... Conjugated polymers with well-balanced ambipolar charge transport is essential for organic circuits at low cost and large area with simplified fabrication techniques.Aiming at this point,herein,a novel asymmetric thiophene/pyridine-flanked diketopyrrolopyrrole-based copolymer(PPyTDPP-2FBT)is designed and synthesized.Due to the effect of incorporating F atoms on molecular energy alignment and conjugation conformation,the PPyTDPP-2FBT copolymer exhibits typical V-shaped ambipolar field-effect transfer characteristics with well-balanced hole and electron mobilities of 0.64 and 0.46 cm^(2)V^(−1)s^(−1),respectively.Furthermore,organic digital and analog circuits such as inverters and frequency doublers are successfully constructed based on solution-processed films of the PPyTDPP-2FBT copolymers which show a typical circuit operating mode with a high gain of 133 due to the well-balanced electrical properties.In addition,PPyTDPP-2FBT-based devices also demonstrate good stability and batch repeatability,suggesting their great potential applications in organic integrated electronic circuits. 展开更多
关键词 conjugated polymers balanced ambipolar transport property organic field effect transistor inverter frequency doubler
原文传递
W-band push–push monolithic frequency doubler in 1-μm InP DHBT technology 被引量:1
12
作者 姚鸿飞 王显泰 +5 位作者 吴旦昱 苏永波 曹玉雄 葛霁 宁晓曦 金智 《Journal of Semiconductors》 EI CAS CSCD 2013年第9期122-127,共6页
A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with ... A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz. 展开更多
关键词 frequency doubler W-BAND lnP DHBT push-push
原文传递
基于GaN肖特基二极管的200 GHz二倍频器研制
13
作者 杨岚馨 骆祥 +1 位作者 肖飞 张勇 《太赫兹科学与电子信息学报》 2025年第1期44-48,共5页
基于GaN肖特基二极管设计并实现了一款200 GHz高功率二倍频器。该倍频器采用高功率容量的氮化镓(GaN)肖特基二极管代替传统GaAs肖特基二极管,并结合高热导率的氮化铝(AlN)衬底,较大提升了倍频器的散热性能和输出功率;采用含有楔形膜片... 基于GaN肖特基二极管设计并实现了一款200 GHz高功率二倍频器。该倍频器采用高功率容量的氮化镓(GaN)肖特基二极管代替传统GaAs肖特基二极管,并结合高热导率的氮化铝(AlN)衬底,较大提升了倍频器的散热性能和输出功率;采用含有楔形膜片的悬置微带-波导过渡结构,通过插入标准矩形波导中的楔形膜片实现模式转换并使输入输出同向,实现倍频器的小型化。考虑到温度对二极管工作的影响,对传统二极管模型进行修正,并进行电热耦合仿真。实际测试结果表明,在500 mW连续波输入的情况下,该二倍频器在190~220 GHz频率范围内输出均高于20 mW,并在218 GHz实现了最大36 mW的功率输出,转换效率为7.2%。 展开更多
关键词 太赫兹 氮化镓 二倍频 氮化铝
在线阅读 下载PDF
Nanoindentation on the doubler plane of KDP single crystal 被引量:1
14
作者 郭晓光 张小冀 +3 位作者 唐宪钊 郭东明 高航 滕晓辑 《Journal of Semiconductors》 EI CAS CSCD 2013年第3期21-25,共5页
The nanohardness is from 1.44 to 2.61 GPa,the Vickers hardness is from 127 to 252 Vickers,and elastic modulus is from 52 to 123 GPa by the nanoindentation experiments on the doubler plane of KDP crystal. An indentatio... The nanohardness is from 1.44 to 2.61 GPa,the Vickers hardness is from 127 to 252 Vickers,and elastic modulus is from 52 to 123 GPa by the nanoindentation experiments on the doubler plane of KDP crystal. An indentation size effect is observed on the doubler plane in the test as the nanohardness and elastic modulus decreases with the increase of the maximum load.Slippage is identified as the major mode of plastic deformation, and pop-in events are attributed to the initiation of slippage.And the variation of unloading curve end is the result of stick effects between the indenter and the contact surface.The depth of the elastic deformation,which is between 40 and 75 nm,is responsible for the elastic deformation.The doubler plane of KDP crystal has anisotropy,and the relative anisotropy of nanohardness is 8.2%and the relative anisotropy of elastic modulus is 8.0%. 展开更多
关键词 KDP crystal the doubler plane NANOINDENTATION size effect ANISOTROPY
原文传递
Frequency-stabilized semimonolithic frequency doubler with high output power 被引量:1
15
作者 罗玉 李莹 +2 位作者 谢常德 彭堃墀 潘庆 《Chinese Optics Letters》 SCIE EI CAS CSCD 2005年第7期395-398,共4页
We present a semimonolithic frequency-doubler from 1080 to 540 nm with 80% doubling efficiency and up to 849-mW output power of green light. A frequency-stabilized laser diode (LD) pumped continuous wave (CW) Nd:YAP l... We present a semimonolithic frequency-doubler from 1080 to 540 nm with 80% doubling efficiency and up to 849-mW output power of green light. A frequency-stabilized laser diode (LD) pumped continuous wave (CW) Nd:YAP laser is used as the pump source of the doubler consisting of an α-cut KTP crystal and an input mirror. The frequency stabilities of the output second harmonic wave are better than ±246 kHz and ±2.3 MHz in 1 and 30 minutes, respectively, and the intensity fluctuation is less than ±0.65%. 展开更多
关键词 Continuous wave lasers Frequency doublers Mirrors Optical pumping Optically pumped lasers Second harmonic generation Semiconductor lasers
原文传递
全桥倍流整流变换器磁集成优化设计
16
作者 吴宏强 张丽萍 陈润 《电气开关》 2025年第2期16-21,共6页
基于全桥倍流整流变换器的工作原理,设计变压器和电感的集成磁件。针对电感和变压器的集成,从解耦集成结构中推导出所需要的集成结构,分析了集成磁件的交流磁通和直流磁通。进一步通过磁路-电路对偶变换法,从电路的角度对采用集成磁件... 基于全桥倍流整流变换器的工作原理,设计变压器和电感的集成磁件。针对电感和变压器的集成,从解耦集成结构中推导出所需要的集成结构,分析了集成磁件的交流磁通和直流磁通。进一步通过磁路-电路对偶变换法,从电路的角度对采用集成磁件的变换器的功能进行验证。最后,搭建了1kW全桥倍流整流变换器对磁元件样品进行测试,测试结果表明采用解耦磁集成的变换器相较于采用分立磁件的变换器,效率提高了1.5%。实验验证了理论分析的正确性以及采用集成磁件可以提高变换器的效率。 展开更多
关键词 倍流整流 磁元件设计 磁集成
在线阅读 下载PDF
方钢管覆板及竖向插板加强节点平面内抗弯性能
17
作者 温志宏 李照伟 +1 位作者 魏海丰 龙帮云 《工业建筑》 2025年第2期130-137,共8页
为研究覆板及插板加强对方钢管节点平面内抗弯性能的影响,对支主管宽度比β=0.8的未加强和覆板加强、竖向插板加强节点,以及等宽节点试件进行静力加载试验,分析了节点的破坏模式、弯矩-应变和弯矩-转角曲线,建立了β=0.4,0.6,0.8的未加... 为研究覆板及插板加强对方钢管节点平面内抗弯性能的影响,对支主管宽度比β=0.8的未加强和覆板加强、竖向插板加强节点,以及等宽节点试件进行静力加载试验,分析了节点的破坏模式、弯矩-应变和弯矩-转角曲线,建立了β=0.4,0.6,0.8的未加强、覆板加强及插板加强节点有限元模型,并进行节点抗弯承载机理分析。试验表明:覆板及竖向插板对节点抗弯能力的加强效果明显,竖向插板加强节点的抗弯承载力和初始刚度较未加强节点提高可达71%和123%;竖向插板加强可较好保护支管根部焊缝,将破坏转移为支管屈服;覆板则通过保护主管翼缘,将节点的破坏模式由主管翼缘屈服变为覆板屈服;加强节点的延性较好,但其承载力和刚度低于等宽节点。进一步的机理分析表明:覆板对主管翼缘的局部加厚可提高其受压刚度,进而提高节点的抗弯能力;竖向插板则通过加劲肋效应增强节点域抗弯刚度,保护支管根部焊缝,实现节点的抗弯加强。 展开更多
关键词 方钢管 覆板加强节点 竖向插板加强节点 平面内抗弯 试验研究 有限元
原文传递
A broadband GaAs MMIC frequency doubler on left-handed nonlinear transmission lines
18
作者 董军荣 黄杰 +2 位作者 田超 杨浩 张海英 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第9期89-92,共4页
A broadband frequency doubler using left-handed nonlinear transmission lines(LH NLTLs) based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A... A broadband frequency doubler using left-handed nonlinear transmission lines(LH NLTLs) based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4×0.8 mm^2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power,the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz—6 dBm bandwidth.The experimental results were quite consistent with the simulated results.The compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application. 展开更多
关键词 GAAS MMIC technology LH NLTLs frequency doubler
原文传递
W-band high output power Schottky diode doublers with quartz substrate
19
作者 姚常飞 周明 +2 位作者 罗运生 李姣 许从海 《Journal of Semiconductors》 EI CAS CSCD 2013年第12期77-81,共5页
W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the no... W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz. 展开更多
关键词 high output power frequency doubler planar Schottky diode EFFICIENCY
原文传递
Design of 20-44 GHz broadband doubler MMIC
20
作者 李芹 王志功 李伟 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第4期113-116,共4页
This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15 μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz. This chip is composed of a s... This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15 μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz. This chip is composed of a single ended-into differential-out active Balun, balanced FETs in push-push configuration, and a distributed amplifier. The MMIC doubler exhibits more than 4 dB conversion gain with 12 dBm of output power, and the fundamental frequency suppression is typically -20 dBc up to 44 GHz. The MMIC works at VDD = 3.5 V, Vss = -3.5 V, Id = 200 mA and the chip size is 1.5× 1.8 mm^2. 展开更多
关键词 frequency doubler active Balun distributed amplifier
原文传递
上一页 1 2 16 下一页 到第
使用帮助 返回顶部