NaNbO_(3)-based lead-free dielectric ceramics possess significant application prospects in the field of dielectric capacitors.However,their development is hindered by low recoverable energy storage density(W_(rec))and...NaNbO_(3)-based lead-free dielectric ceramics possess significant application prospects in the field of dielectric capacitors.However,their development is hindered by low recoverable energy storage density(W_(rec))and energy storage efficiency(η).Herein,novel NaNbO_(3)-based ceramics,(1-x)[0.7Na_(0.97)Sm_(0.01)NbO_(3)–0.3(Sr_(0.7)Bi_(0.2))(Ti_(0.8)Zr_(0.2))O_(3)]–xCaTiO_(3),were created by adding CaTiO_(3) linear dielectric,aiming to improve their energy storage performance(ESP).The phase structure,microstructure,dielectric properties,energy storage and charge–discharge performances of the ceramics were methodically analyzed.All components of the ceramics exhibit a perovskite structure consisting of two phases:antiferroelectric P-phase(AFE P)and antiferroelectric R-phase(AFE R),with the AFE R phase increasing as x rises.All ceramic surfaces exhibit clear grain morphology.The resultant ceramics have an appropriate dielectric constant and a small dielectric loss,which are beneficial for improving breakdown field strength(E_(b)).Finally,at an E_(b) of 470 kV/cm,0.85[0.7Na_(0.97)Sm_(0.01)NbO_(3)–0.3(Sr_(0.7)Bi_(0.2))(Ti_(0.8)Zr_(0.2))O_(3)]–0.15CaTiO_(3) ceramic achieves optimal ESP:W_(rec)=3.9 J/cm^(3),η=72.49%.In addition,it has remarkable stability with temperature and frequency in energy storage and displays ultrafast speed in the charge–discharge process(t_(0.9)=27 ns).展开更多
A direct tunneling model through gate dielectric s in CMOS devices in the frame of WKB approximation is reported.In the model,an im proved one-band effective mass approximation is used for the hole quantization, wher...A direct tunneling model through gate dielectric s in CMOS devices in the frame of WKB approximation is reported.In the model,an im proved one-band effective mass approximation is used for the hole quantization, where valence band mixing is taken into account.By comparing to the experiments, the model is demonstrated to be applicable to both electron and hole tunneling c urrents in CMOS devices.The effect of the dispersion in oxide energy gap on the tunneling current is also studied.This model can be further extended to study th e direct tunneling current in future high-k materials.展开更多
The designing approaches and key fabricating technologies for high frequency high power double dielectrics gate static induction transistor (DDG SIT) with mixed non-saturating I-V characteristics are presented.The eff...The designing approaches and key fabricating technologies for high frequency high power double dielectrics gate static induction transistor (DDG SIT) with mixed non-saturating I-V characteristics are presented.The effects of parasitic gate-source capacitance (C gs) on the power performance of SIT are discussed.The main methods and considerations to diminish C gs,consequently to improve the high power performance are given.Synchronous epitaxy technology is the critical step to decrease C gs.The 7-μm pitch DDG SIT delivering output power >20W with >7dB power gain and >70% drain efficiency at 400MHz,and delivering output power >7W with >5dB power gain and >50% drain efficiency at 700MHz are successfully fabricated.展开更多
In this work,a non-toxic and environmentally friendly aqueous-solution-based method has been adopted to prepare gadolinium-doped hafnium oxide(HfO2) gate dielectric thin films.By adjusting the gadolinium(Gd) doping co...In this work,a non-toxic and environmentally friendly aqueous-solution-based method has been adopted to prepare gadolinium-doped hafnium oxide(HfO2) gate dielectric thin films.By adjusting the gadolinium(Gd) doping concentration,the oxygen vacancy content,band offset,interface trap density,and dielectric constant of HfGdOx(HGO) thin films have been optimized.Results have confirmed that HGO thin films with Gd doping ratio of 15 at.% have demonstrated appropriate dielectric constant of 27.1 and lower leakage current density of 5.8×10-9 A cm-2.Amorphous indium-gallium-zinc oxide(α-IGZO) thin film transistors(TFTs) based on HGO thin film(Gd:15 at.%) as gate dielectric layer have exhibited excellent electrical performance,such as larger saturated carrier mobility(μsat) of 20.1 cm2 V-1 S-1,high on/off current ratio(Ion/Ioff) of ~108,smaller sub-threshold swing(SS) of 0.07 V decade-1,and a negligible threshold voltage shift(ΔVTH) of 0.08 V under positive bias stress(PBS) for 7200 s.To confirm its potential application in logic circuit,a resistor-loaded inverter based on HGO/α-IGZO TFTs has been constructed.A high voltage gain of 19.8 and stable full swing characteristics have been detected.As a result,it can be concluded that aqueous-solution-driven HGO dielectrics have potential application in high resolution flat panel displays and ultra-large-scale integrated logic circuits.展开更多
Nanocomposite dielectrics show great promising application in developing next generation wearable all-solidstate cooling devices owing to the possessed advantages of high cooling efficiency, light-weight and small vol...Nanocomposite dielectrics show great promising application in developing next generation wearable all-solidstate cooling devices owing to the possessed advantages of high cooling efficiency, light-weight and small volume without the induced greenhouse effect or serious harm to ozone layer in the exploited refrigerants. However, low electrocaloric strength in nanocomposite dielectric is severely restricting its wide-spread application because of high applied operating voltage to improve electrocaloric effect. After addressing the chosen optimized ferroelectric ceramic and ferroelectric polymer matrix in conjunction with the analysis of crucial parameters, recent progress of electrocaloric effect(ECE) in polymer nanocomposites has been considerably reviewed. Subsequently, prior to proposing the conceptual design and devices/systems in electrocaloric nanocomposites, the existing developed devices/systems are reviewed. Finally, conclusions and prospects are conducted, including the aspects of materials chosen, structural design and key issues to be considered in improving electrocaloric effect of polymer nanocomposite dielectrics for flexible solidstate cooling devices.展开更多
The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because...The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.展开更多
We present the feasibility study of nonlinear dielectrics for the energy storage applications. Corona deposition of electric charges to the surface of thin films of highly polarizable organic molecules (dielectrophore...We present the feasibility study of nonlinear dielectrics for the energy storage applications. Corona deposition of electric charges to the surface of thin films of highly polarizable organic molecules (dielectrophores) shows that the electric field inside the dielectric has a highly nonlinear response. The stored energy densities are superior to the polypropylene films, measured for the comparison, and at least comparable to the current electrochemical batteries. These results make us believe that the dielectrophores-based electrostatic capacitors can revolutionize the energy storage market.展开更多
By applying the perturbation method and the complex-source-point theory, the theoretical research of measurement of complex permittivity of uniaxial anisotropic materials by means of an electromagnetic open resonator ...By applying the perturbation method and the complex-source-point theory, the theoretical research of measurement of complex permittivity of uniaxial anisotropic materials by means of an electromagnetic open resonator has been made, and the double refraction phenomenon due to anisotropy of measured dielectric materials has been quantitatively analyzed. Finally, measurements have been made on some single-crystal quartz specimens using an automated open resonator measurement system at 8mm band.展开更多
We consider the system of equations determining the linear thermoelastic deformations of dielectrics within the recently called Moore-Gibson-Thompson(MGT)theory.First,we obtain the system of equations for such a case....We consider the system of equations determining the linear thermoelastic deformations of dielectrics within the recently called Moore-Gibson-Thompson(MGT)theory.First,we obtain the system of equations for such a case.Second,we consider the case of a rigid solid and show the existence and the exponential decay of solutions.Third,we consider the thermoelastic case and obtain the existence and the stability of the solutions.Exponential decay of solutions in the one-dimensional case is also recalled.展开更多
We study a series of（HfO2）x（Al2O3）1-x /4H-SiC MOS capacitors. It is shown that the conduction band offset of HfO2 is 0.5 e V and the conduction band offset of Hf AlO is 1.11–1.72 e V. The conduction band offsets...We study a series of（HfO2）x（Al2O3）1-x /4H-SiC MOS capacitors. It is shown that the conduction band offset of HfO2 is 0.5 e V and the conduction band offset of Hf AlO is 1.11–1.72 e V. The conduction band offsets of（Hf O2）x（Al2O3）1-x are increased with the increase of the Al composition, and the（HfO2）x（Al2O3）1-x offer acceptable barrier heights（〉 1 e V）for both electrons and holes. With a higher conduction band offset,（Hf O2）x（Al2O3）1-x/4H-SiC MOS capacitors result in a ～ 3 orders of magnitude lower gate leakage current at an effective electric field of 15 MV/cm and roughly the same effective breakdown field of ～ 25 MV/cm compared to HfO2. Considering the tradeoff among the band gap, the band offset, and the dielectric constant, we conclude that the optimum Al2O3 concentration is about 30% for an alternative gate dielectric in 4H-Si C power MOS-based transistors.展开更多
We studied the dielectric properties of organosilicon-containing helical cyclopolymer PbMA which consists of PMMA main chains and tetramethyldisiloxane side rings.PbMA formed films with excellent uniformity through sp...We studied the dielectric properties of organosilicon-containing helical cyclopolymer PbMA which consists of PMMA main chains and tetramethyldisiloxane side rings.PbMA formed films with excellent uniformity through spin-coating onto highly n-doped silicon(n-Si)wafers for constructing devices of dielectric measurements,on which the dielectric properties and I-V characteristics of PbMA were studied.PbMA has a much lower dielectric constant(lower than 2.6)in the frequency range of 10-10^(5) Hz,and better thermal stability than PMMA does.I-V data showed that the metal/PbMA/n-Si devices have different conducting directions,depending on whether Au or Al deposited over PbMA layers.展开更多
A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibit...A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ~4 V, a small leakage current density of ~2 ×10-6 Acre-2 at a gate voltage of 7V, a high charge trapping density of 1.42 × 1013 cm-2 at a working vo]tage of 4-10 V and good retention characteristics are observed. Furthermore, the programming （△ VFB = 2.8 V at 10 V for 10μs） and erasing speeds （△VFB =-1.7 V at -10 V for 10μs） of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.展开更多
Nanodielectric composites have been developed in recent years attempting to improve the dielectric properties such as dielectric constant, dielectric strength and voltage endurance. Among various investigations, nanop...Nanodielectric composites have been developed in recent years attempting to improve the dielectric properties such as dielectric constant, dielectric strength and voltage endurance. Among various investigations, nanoparticle dispersion was particularly emphasized in this work. General Electric Global Research Center in Niskayuna NY USA has investigated various nanoparticles, nanocomposites and nanocomposite synthesis methods intending to understand particle dispersion and their impact on the nanocomposite dielectric properties. The breakdown strength and microstructures of the nanocomposites containing different particles were studied for projects related to capacitor and electrical insulation technologies. The nanocomposite synthesis methods either employed commerical nanoparticles or utilized nanoparticles that were self-assembled (in-situ precipitation) in a matrix. Our investigations have shown that nanocomposites prepared with solution chemistry were more favorable for producing uniform dispersion of nanoparticles. Structural information of nanocomposites was studied with transmission electron microscopy and the interection between particles and matrix polymers were tentatively probed using dielectric spectroscopy. In these new class of materials high energy densities on the order of 15J/cc were achievable in nanocomposites.展开更多
Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe_(2)/SnSe_(...Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe_(2)/SnSe_(2)TFET with various gate dielectric materials is investigated based on quantum transport sim-ulation.Results show that TFETs with high-k gate dielectric materials exhibit improved on-offratio and enhanced transconductance.The optimized WSe_(2)/SnSe_(2)TFET with TiO_(2)gate dielectrics achieves an on-state current of 1560μA/μm and a subthreshold swing(SS)of 48 mV/dec.The utilization of high-k gate dielectric materials results in shorter tunneling length,higher transmission efficiency,and increased elec-tron tunneling probability.The performance of the WSe_(2)/SnSe_(2)TFET would be affected by the presence of the underlap region.Moreover,WSe_(2)/SnSe_(2)TFETs with La_(2)O_(3)dielectric can be scaled down to 3 nm while meeting high-performance(HP)device requirements according to the International Technology Roadmap for Semiconductors(ITRS).This research presents a practical solution for designing advanced logic devices in the sub-5 nm technology node.展开更多
The relative permittivity is one of the essential parameters determines the physical polarization behaviors of the nanocomposite dielectrics in many applications,particularly for capacitive energy storage.Predicting t...The relative permittivity is one of the essential parameters determines the physical polarization behaviors of the nanocomposite dielectrics in many applications,particularly for capacitive energy storage.Predicting the relative permittivity of particle/polymer nanocomposites from the microstructure is of great significance.However,the classical effective medium theory and physics-based numerical calculation represented by finite element method are time-consuming and cumbersome for complex structures and nonlinear problem.The work explores a novel architecture combining the convolutional neural network(ConvNet)and finite element method(FEM)to predict the relative permittivity of nanocomposite dielectrics with incorporated barium titanite(BT)particles in polyvinylidene fluoride(PVDF)matrix.The ConvNet was trained and evaluated on big datasets with 14266 training data and 3514 testing data generated form a programmatic algorithm.Through numerical experiments,we demonstrate that the trained network can efficiently provide an accurate agreement between the ConvNet model and FEM by virtue of the significant evaluation metrics R2,which reaches as high as 0.9783 and 0.9375 on training and testing data,respectively.The strong universality of the presented method allows for an extension to fast and accurately predict other properties of the nanocomposite dielectrics.展开更多
It is enunciated in this paper that the volume density of the dipole moment of the induced charges in a dielectric does not in general qualify as a field in terms of which the actual induced charge distribution in the...It is enunciated in this paper that the volume density of the dipole moment of the induced charges in a dielectric does not in general qualify as a field in terms of which the actual induced charge distribution in the dielectric can he expressed as a volume charge density inside the interior of the dielectric equal to the negative of the divergence of that field and a surface charge density on the boundary of the dielectric equal to the component of that field in the direction of the outward normal to the boundary, unless the induced charge density inside the dielectric vanishes. The field that qualifies to satisfy the second criterion is in the general case named ＂absolute polarization＂, and the interconnection between the two polarizations is established. It is then demonstrated that although a few major equations of linear media electrostatics change, the results for the field of a uniformly polarized object remain unchanged, and all the existing methods of analytical evaluation can be justified if the ＂polarization＂ defined by the first criterion of being a field that equals the volume density of the dipole moment of bound charges is just replaced by the ＂absolute polarization＂, the concept of which is introduced here.展开更多
With the expanding application of capacitors,thermal resistant dielectric materials are in high demand due to the increasing harsh environments where the capacitors are needed and the heat generated by the capacitors....With the expanding application of capacitors,thermal resistant dielectric materials are in high demand due to the increasing harsh environments where the capacitors are needed and the heat generated by the capacitors.Herein,we present polyarylene ether nitrile and titanium dioxide hybrids which can be used as thermal resistant dielectrics for these capacitors.Phthalonitrile modified titanium dioxide(TiO_(2)-CN)and phthalonitrile end-capped polyarylene ether nitrile(PEN-Ph)are firstly prepared.After being cast into TiO_(2)-CN/PEN nanocomposite films,these composites self-crosslink upon heating at 320℃for 4 h,forming the polyarylene ether nitrile and titanium dioxide hybrids(TiO_(2)-PEN).Improved dielectric constants which are stable from room temperature to 200℃of these hybrids are observed,indicating the potential application of the hybrids as thermal resistant dielectrics.展开更多
Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outs...Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outstanding physical and chemical stability in contact with silicon substrates.This paper reviews the recent development of rare earth oxide-based gate dielectric films.Aiming at the problem that k value of rare earth oxides(REOs)is generally inversely proportio nal to the band gap value,one of the biggest technical obstacles of high k films,we reviewed three strategies reported in recent papers,namely doping modification,nitriding treatment and multilayer composite,which can provide some insights for long-term development of MOS devices in integrated circuit(IC).展开更多
A simple and effective photochemical method was developed for cross-linking of polymer gate dielectrics. Laborious synthetic processes for functionalizing polymer dielectrics with photo-cross-linkable groups were avoi...A simple and effective photochemical method was developed for cross-linking of polymer gate dielectrics. Laborious synthetic processes for functionalizing polymer dielectrics with photo-cross-linkable groups were avoided. The photo-cross-linker, BBP-4, was added into host polymers by simple solution blending process, which was capable of abstracting hydrogen atoms from polymers containing active C--H groups upon exposure to ultraviolet （UV） radiation. The cross-linking can be completed with a relatively long wavelength UV light （365 nm）. The approach has been applied to methacrylate and styrenic polymers such as commercial poly（methylmethacrylate） （PMMA）, poly（iso-butylmethacrylate） （PiBMA） and poly（4-methylstyrene） （PMS）. The cross-linked networks enhanced dielectric properties and solvent resistance of the thin films. The bottom-gate organic field-effect transistors （OFETs） through all solution processes on plastic substrate were fabricated. The OFET devices showed low voltage operation and steep subthreshold swing at relatively small gate dielectric capacitance.展开更多
This paper presents experimental results concerning the effect of dielectric type on ozone concentration and the efficiency of its generation in plasma reactor with two mesh electrodes.Three types of dielectric solid ...This paper presents experimental results concerning the effect of dielectric type on ozone concentration and the efficiency of its generation in plasma reactor with two mesh electrodes.Three types of dielectric solid were used in the study; glass, micanite and Kapton insulating foil. The experiments were conducted for voltage ranges from 2.3 to 13 k V. A plasma reactor equipped with two 0.3×0.3 mm^2 mesh electrodes made of acid resistant AISI 304 mesh was used in the experiments. The influence of the dielectric type on the concentration and efficiency of ozone generation was described. The resulting maximum concentration of the ozone was about 2.70–9.30 g O3 m^-3, depending on the dielectrics used. The difference between the maximum and the minimum ozone concentration depends on the dielectric used,this accounts for 70% at the variance. The reactor capacity has also been described in the paper; total Ct and dielectric capacitance Cd depending on the dielectric used and its thickness.展开更多
基金Project supported by the Natural Science Foundation of Anhui Provincial Education Department(Grant No.KJ2019A0054)。
文摘NaNbO_(3)-based lead-free dielectric ceramics possess significant application prospects in the field of dielectric capacitors.However,their development is hindered by low recoverable energy storage density(W_(rec))and energy storage efficiency(η).Herein,novel NaNbO_(3)-based ceramics,(1-x)[0.7Na_(0.97)Sm_(0.01)NbO_(3)–0.3(Sr_(0.7)Bi_(0.2))(Ti_(0.8)Zr_(0.2))O_(3)]–xCaTiO_(3),were created by adding CaTiO_(3) linear dielectric,aiming to improve their energy storage performance(ESP).The phase structure,microstructure,dielectric properties,energy storage and charge–discharge performances of the ceramics were methodically analyzed.All components of the ceramics exhibit a perovskite structure consisting of two phases:antiferroelectric P-phase(AFE P)and antiferroelectric R-phase(AFE R),with the AFE R phase increasing as x rises.All ceramic surfaces exhibit clear grain morphology.The resultant ceramics have an appropriate dielectric constant and a small dielectric loss,which are beneficial for improving breakdown field strength(E_(b)).Finally,at an E_(b) of 470 kV/cm,0.85[0.7Na_(0.97)Sm_(0.01)NbO_(3)–0.3(Sr_(0.7)Bi_(0.2))(Ti_(0.8)Zr_(0.2))O_(3)]–0.15CaTiO_(3) ceramic achieves optimal ESP:W_(rec)=3.9 J/cm^(3),η=72.49%.In addition,it has remarkable stability with temperature and frequency in energy storage and displays ultrafast speed in the charge–discharge process(t_(0.9)=27 ns).
文摘A direct tunneling model through gate dielectric s in CMOS devices in the frame of WKB approximation is reported.In the model,an im proved one-band effective mass approximation is used for the hole quantization, where valence band mixing is taken into account.By comparing to the experiments, the model is demonstrated to be applicable to both electron and hole tunneling c urrents in CMOS devices.The effect of the dispersion in oxide energy gap on the tunneling current is also studied.This model can be further extended to study th e direct tunneling current in future high-k materials.
文摘The designing approaches and key fabricating technologies for high frequency high power double dielectrics gate static induction transistor (DDG SIT) with mixed non-saturating I-V characteristics are presented.The effects of parasitic gate-source capacitance (C gs) on the power performance of SIT are discussed.The main methods and considerations to diminish C gs,consequently to improve the high power performance are given.Synchronous epitaxy technology is the critical step to decrease C gs.The 7-μm pitch DDG SIT delivering output power >20W with >7dB power gain and >70% drain efficiency at 400MHz,and delivering output power >7W with >5dB power gain and >50% drain efficiency at 700MHz are successfully fabricated.
基金financially supported by the National Natural Science Foundation of China (Nos. 11774001 and 51572002)Open fund for Discipline Construction, Institute of Physical Science and Information Technology, Anhui University (No. S01003101)。
文摘In this work,a non-toxic and environmentally friendly aqueous-solution-based method has been adopted to prepare gadolinium-doped hafnium oxide(HfO2) gate dielectric thin films.By adjusting the gadolinium(Gd) doping concentration,the oxygen vacancy content,band offset,interface trap density,and dielectric constant of HfGdOx(HGO) thin films have been optimized.Results have confirmed that HGO thin films with Gd doping ratio of 15 at.% have demonstrated appropriate dielectric constant of 27.1 and lower leakage current density of 5.8×10-9 A cm-2.Amorphous indium-gallium-zinc oxide(α-IGZO) thin film transistors(TFTs) based on HGO thin film(Gd:15 at.%) as gate dielectric layer have exhibited excellent electrical performance,such as larger saturated carrier mobility(μsat) of 20.1 cm2 V-1 S-1,high on/off current ratio(Ion/Ioff) of ~108,smaller sub-threshold swing(SS) of 0.07 V decade-1,and a negligible threshold voltage shift(ΔVTH) of 0.08 V under positive bias stress(PBS) for 7200 s.To confirm its potential application in logic circuit,a resistor-loaded inverter based on HGO/α-IGZO TFTs has been constructed.A high voltage gain of 19.8 and stable full swing characteristics have been detected.As a result,it can be concluded that aqueous-solution-driven HGO dielectrics have potential application in high resolution flat panel displays and ultra-large-scale integrated logic circuits.
基金Project(202045007) supported by the Start-up Funds for Outstanding Talents in Central South University,China。
文摘Nanocomposite dielectrics show great promising application in developing next generation wearable all-solidstate cooling devices owing to the possessed advantages of high cooling efficiency, light-weight and small volume without the induced greenhouse effect or serious harm to ozone layer in the exploited refrigerants. However, low electrocaloric strength in nanocomposite dielectric is severely restricting its wide-spread application because of high applied operating voltage to improve electrocaloric effect. After addressing the chosen optimized ferroelectric ceramic and ferroelectric polymer matrix in conjunction with the analysis of crucial parameters, recent progress of electrocaloric effect(ECE) in polymer nanocomposites has been considerably reviewed. Subsequently, prior to proposing the conceptual design and devices/systems in electrocaloric nanocomposites, the existing developed devices/systems are reviewed. Finally, conclusions and prospects are conducted, including the aspects of materials chosen, structural design and key issues to be considered in improving electrocaloric effect of polymer nanocomposite dielectrics for flexible solidstate cooling devices.
基金support from Natural Science Foundation of Jiangsu Province (ProjectNo. BK2007130)National Natural Science Foundation of China (Grant Nos. 10874065, 60576023 and 60636010)+3 种基金Ministry of Science and Technology of China (Grant No.2009CB929503)Ministry of Science and Technology of China (Grant Nos. 2009CB929503 and2009ZX02101-4)the project sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education MinistryNational Found for Fostering Talents of Basic Science (NFFTBS) (ProjectNo. J0630316)
文摘The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.
文摘We present the feasibility study of nonlinear dielectrics for the energy storage applications. Corona deposition of electric charges to the surface of thin films of highly polarizable organic molecules (dielectrophores) shows that the electric field inside the dielectric has a highly nonlinear response. The stored energy densities are superior to the polypropylene films, measured for the comparison, and at least comparable to the current electrochemical batteries. These results make us believe that the dielectrophores-based electrostatic capacitors can revolutionize the energy storage market.
基金Supported by the Doctoral Fbundation of the State Education Commission of China
文摘By applying the perturbation method and the complex-source-point theory, the theoretical research of measurement of complex permittivity of uniaxial anisotropic materials by means of an electromagnetic open resonator has been made, and the double refraction phenomenon due to anisotropy of measured dielectric materials has been quantitatively analyzed. Finally, measurements have been made on some single-crystal quartz specimens using an automated open resonator measurement system at 8mm band.
文摘We consider the system of equations determining the linear thermoelastic deformations of dielectrics within the recently called Moore-Gibson-Thompson(MGT)theory.First,we obtain the system of equations for such a case.Second,we consider the case of a rigid solid and show the existence and the exponential decay of solutions.Third,we consider the thermoelastic case and obtain the existence and the stability of the solutions.Exponential decay of solutions in the one-dimensional case is also recalled.
基金supported by the National Natural Science Foundation of China(Grant Nos.51272202 and 61234006)the Science Project of State Grid,China(Grant No.SGRI-WD-71-14-004)
文摘We study a series of（HfO2）x（Al2O3）1-x /4H-SiC MOS capacitors. It is shown that the conduction band offset of HfO2 is 0.5 e V and the conduction band offset of Hf AlO is 1.11–1.72 e V. The conduction band offsets of（Hf O2）x（Al2O3）1-x are increased with the increase of the Al composition, and the（HfO2）x（Al2O3）1-x offer acceptable barrier heights（〉 1 e V）for both electrons and holes. With a higher conduction band offset,（Hf O2）x（Al2O3）1-x/4H-SiC MOS capacitors result in a ～ 3 orders of magnitude lower gate leakage current at an effective electric field of 15 MV/cm and roughly the same effective breakdown field of ～ 25 MV/cm compared to HfO2. Considering the tradeoff among the band gap, the band offset, and the dielectric constant, we conclude that the optimum Al2O3 concentration is about 30% for an alternative gate dielectric in 4H-Si C power MOS-based transistors.
基金This work was supported by the National Natural Science Foundation of China(No.51673181).
文摘We studied the dielectric properties of organosilicon-containing helical cyclopolymer PbMA which consists of PMMA main chains and tetramethyldisiloxane side rings.PbMA formed films with excellent uniformity through spin-coating onto highly n-doped silicon(n-Si)wafers for constructing devices of dielectric measurements,on which the dielectric properties and I-V characteristics of PbMA were studied.PbMA has a much lower dielectric constant(lower than 2.6)in the frequency range of 10-10^(5) Hz,and better thermal stability than PMMA does.I-V data showed that the metal/PbMA/n-Si devices have different conducting directions,depending on whether Au or Al deposited over PbMA layers.
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007the National Key Research and Development Program of China under Grant No 2016YFA0301701the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112
文摘A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ~4 V, a small leakage current density of ~2 ×10-6 Acre-2 at a gate voltage of 7V, a high charge trapping density of 1.42 × 1013 cm-2 at a working vo]tage of 4-10 V and good retention characteristics are observed. Furthermore, the programming （△ VFB = 2.8 V at 10 V for 10μs） and erasing speeds （△VFB =-1.7 V at -10 V for 10μs） of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.
文摘Nanodielectric composites have been developed in recent years attempting to improve the dielectric properties such as dielectric constant, dielectric strength and voltage endurance. Among various investigations, nanoparticle dispersion was particularly emphasized in this work. General Electric Global Research Center in Niskayuna NY USA has investigated various nanoparticles, nanocomposites and nanocomposite synthesis methods intending to understand particle dispersion and their impact on the nanocomposite dielectric properties. The breakdown strength and microstructures of the nanocomposites containing different particles were studied for projects related to capacitor and electrical insulation technologies. The nanocomposite synthesis methods either employed commerical nanoparticles or utilized nanoparticles that were self-assembled (in-situ precipitation) in a matrix. Our investigations have shown that nanocomposites prepared with solution chemistry were more favorable for producing uniform dispersion of nanoparticles. Structural information of nanocomposites was studied with transmission electron microscopy and the interection between particles and matrix polymers were tentatively probed using dielectric spectroscopy. In these new class of materials high energy densities on the order of 15J/cc were achievable in nanocomposites.
基金supported by the National Natural Science Foun-dation of China(Grant Nos.62174122 and U2241244)the Fun-damental Research Funds for the Central Universities(Grant No.2042023kf0116)+1 种基金the Science and Technology Project of China Southern Power Grid Co.,Ltd.(Grant No.GXKJXM20220095)the Hubei Key Laboratory of Electronic Manufacturing and Pack-aging Integration of Wuhan University(Grant No.EMPI2023016)。
文摘Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe_(2)/SnSe_(2)TFET with various gate dielectric materials is investigated based on quantum transport sim-ulation.Results show that TFETs with high-k gate dielectric materials exhibit improved on-offratio and enhanced transconductance.The optimized WSe_(2)/SnSe_(2)TFET with TiO_(2)gate dielectrics achieves an on-state current of 1560μA/μm and a subthreshold swing(SS)of 48 mV/dec.The utilization of high-k gate dielectric materials results in shorter tunneling length,higher transmission efficiency,and increased elec-tron tunneling probability.The performance of the WSe_(2)/SnSe_(2)TFET would be affected by the presence of the underlap region.Moreover,WSe_(2)/SnSe_(2)TFETs with La_(2)O_(3)dielectric can be scaled down to 3 nm while meeting high-performance(HP)device requirements according to the International Technology Roadmap for Semiconductors(ITRS).This research presents a practical solution for designing advanced logic devices in the sub-5 nm technology node.
基金supported by the National Natural Science Foundation of China(Nos.52107018 and 51937007)National Key Research and Development Program of China(No.2021YFB2401502).
文摘The relative permittivity is one of the essential parameters determines the physical polarization behaviors of the nanocomposite dielectrics in many applications,particularly for capacitive energy storage.Predicting the relative permittivity of particle/polymer nanocomposites from the microstructure is of great significance.However,the classical effective medium theory and physics-based numerical calculation represented by finite element method are time-consuming and cumbersome for complex structures and nonlinear problem.The work explores a novel architecture combining the convolutional neural network(ConvNet)and finite element method(FEM)to predict the relative permittivity of nanocomposite dielectrics with incorporated barium titanite(BT)particles in polyvinylidene fluoride(PVDF)matrix.The ConvNet was trained and evaluated on big datasets with 14266 training data and 3514 testing data generated form a programmatic algorithm.Through numerical experiments,we demonstrate that the trained network can efficiently provide an accurate agreement between the ConvNet model and FEM by virtue of the significant evaluation metrics R2,which reaches as high as 0.9783 and 0.9375 on training and testing data,respectively.The strong universality of the presented method allows for an extension to fast and accurately predict other properties of the nanocomposite dielectrics.
文摘It is enunciated in this paper that the volume density of the dipole moment of the induced charges in a dielectric does not in general qualify as a field in terms of which the actual induced charge distribution in the dielectric can he expressed as a volume charge density inside the interior of the dielectric equal to the negative of the divergence of that field and a surface charge density on the boundary of the dielectric equal to the component of that field in the direction of the outward normal to the boundary, unless the induced charge density inside the dielectric vanishes. The field that qualifies to satisfy the second criterion is in the general case named ＂absolute polarization＂, and the interconnection between the two polarizations is established. It is then demonstrated that although a few major equations of linear media electrostatics change, the results for the field of a uniformly polarized object remain unchanged, and all the existing methods of analytical evaluation can be justified if the ＂polarization＂ defined by the first criterion of being a field that equals the volume density of the dipole moment of bound charges is just replaced by the ＂absolute polarization＂, the concept of which is introduced here.
基金financially supported by the National Natural Science Foundation of China(No.51773028)。
文摘With the expanding application of capacitors,thermal resistant dielectric materials are in high demand due to the increasing harsh environments where the capacitors are needed and the heat generated by the capacitors.Herein,we present polyarylene ether nitrile and titanium dioxide hybrids which can be used as thermal resistant dielectrics for these capacitors.Phthalonitrile modified titanium dioxide(TiO_(2)-CN)and phthalonitrile end-capped polyarylene ether nitrile(PEN-Ph)are firstly prepared.After being cast into TiO_(2)-CN/PEN nanocomposite films,these composites self-crosslink upon heating at 320℃for 4 h,forming the polyarylene ether nitrile and titanium dioxide hybrids(TiO_(2)-PEN).Improved dielectric constants which are stable from room temperature to 200℃of these hybrids are observed,indicating the potential application of the hybrids as thermal resistant dielectrics.
基金MOST of China(2017YFB0405902,2018YFB1502102)China Postdoctoral Science Foundation(BX20200004)。
文摘Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outstanding physical and chemical stability in contact with silicon substrates.This paper reviews the recent development of rare earth oxide-based gate dielectric films.Aiming at the problem that k value of rare earth oxides(REOs)is generally inversely proportio nal to the band gap value,one of the biggest technical obstacles of high k films,we reviewed three strategies reported in recent papers,namely doping modification,nitriding treatment and multilayer composite,which can provide some insights for long-term development of MOS devices in integrated circuit(IC).
基金financially supported by the National Natural Science Foundation of China (Nos.21674060,21274087,61674102,and 61334008)National Key R&D Program (No.2016YFB0401100)
文摘A simple and effective photochemical method was developed for cross-linking of polymer gate dielectrics. Laborious synthetic processes for functionalizing polymer dielectrics with photo-cross-linkable groups were avoided. The photo-cross-linker, BBP-4, was added into host polymers by simple solution blending process, which was capable of abstracting hydrogen atoms from polymers containing active C--H groups upon exposure to ultraviolet （UV） radiation. The cross-linking can be completed with a relatively long wavelength UV light （365 nm）. The approach has been applied to methacrylate and styrenic polymers such as commercial poly（methylmethacrylate） （PMMA）, poly（iso-butylmethacrylate） （PiBMA） and poly（4-methylstyrene） （PMS）. The cross-linked networks enhanced dielectric properties and solvent resistance of the thin films. The bottom-gate organic field-effect transistors （OFETs） through all solution processes on plastic substrate were fabricated. The OFET devices showed low voltage operation and steep subthreshold swing at relatively small gate dielectric capacitance.
文摘This paper presents experimental results concerning the effect of dielectric type on ozone concentration and the efficiency of its generation in plasma reactor with two mesh electrodes.Three types of dielectric solid were used in the study; glass, micanite and Kapton insulating foil. The experiments were conducted for voltage ranges from 2.3 to 13 k V. A plasma reactor equipped with two 0.3×0.3 mm^2 mesh electrodes made of acid resistant AISI 304 mesh was used in the experiments. The influence of the dielectric type on the concentration and efficiency of ozone generation was described. The resulting maximum concentration of the ozone was about 2.70–9.30 g O3 m^-3, depending on the dielectrics used. The difference between the maximum and the minimum ozone concentration depends on the dielectric used,this accounts for 70% at the variance. The reactor capacity has also been described in the paper; total Ct and dielectric capacitance Cd depending on the dielectric used and its thickness.
