Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received wides...Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices.During bipolar high electric-field cycling in numbers close to dielectric breakdown,the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf_(0.5)Zr_(0.5)O_(2) thin-film capacitors.Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the diameter of 3.85μm when the ferroelectricity suddenly disappears without high-field cycling.The stored charge density is as high as 183μC cm^(−2) at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 10^(12) without inducing dielectric breakdown.The study of synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase.The image of electron energy loss spectroscopy shows the preferred oxygen-vacancy accumulation at the regions near top/bottom electrodes as well as grain boundaries.The ultrahigh dielectric-permittivity material enables high-density integration of extremely scaled logic and memory devices in the future.展开更多
The feldspar-based microwave dielectric ceramic with low relative permittivity(εr)and excellent mechanical properties has attracted much attention in the fifth-generation wireless communication technology.In this wor...The feldspar-based microwave dielectric ceramic with low relative permittivity(εr)and excellent mechanical properties has attracted much attention in the fifth-generation wireless communication technology.In this work,a series of microwave dielectric ceramic SrAl_(2-x)Ga_(x)Si_(2)O_(8)(0.1≤x≤2.0)was synthesized using the traditional solid-state method.X-ray diffraction pattern indicates that Ga^(3+)can be dissolved into Al^(3+),forming a solid solution.Meanwhile,substitution of Ga^(3+)for Al^(3+)can promote the space group transition from I2/c(0.1≤x≤1.4)to P21/a(1.6≤x≤2.0)with coefficient of thermal expansion(CTE)increasing from 2.9×10^(-6)℃^(-1) to 5.2×10^(-6)℃^(-1).During this substitution,the phase transition can significantly improve the structural symmetry to enhance the dielectric properties and mechanical properties.Rietveld refinement results indicate that Ga^(3+)averagely occupied four Al^(3+)compositions to form solid solution.All ceramics have a dense microstructure and high relative density above 95%.An ultralower of 5.8 was obtained at x=1.6 composition with high quality factor(Q´f)of 50700 GHz and negative temperature coefficients of resonant frequency(tf)of approximately−35×10^(-6)℃^(-1).The densification temperature can be reduced to 940℃by adding 4%(in mass)LiF,resulting in good chemical compatibility with Ag electrode.Meanwhile,negativetf can be tuned to near-zero(+3.7×10^(-6)℃^(-1))by adding CaTiO_(3) ceramic.展开更多
Dielectric films are critical components in the fabrication of capacitors. However, their reliance on petroleum-derived polymers presents significant environmental challenges. To address this issue, we report on a hig...Dielectric films are critical components in the fabrication of capacitors. However, their reliance on petroleum-derived polymers presents significant environmental challenges. To address this issue, we report on a high-performance biomass-based dielectric material derived from vanillin(VA), a renewable aromatic aldehyde. Vanillin was first esterified to synthesize vanillin methacrylate(VMA), which was then copolymerized with methyl methacrylate(MMA) via free-radical polymerization to yield P(VMA-MMA). By crosslinking the aldehyde groups in VMA with the amine groups in the polyether amine D400(PEA), we fabricated a series of P(VMA-MMA)@PEA dielectric films with precisely tunable crosslinking densities. The unique molecular structure of vanillin, featuring both a benzene ring and an ester group, facilitates strong δ-π interactions and dipolar polarization, synergistically enhancing energy storage density while minimizing dielectric loss. At an optimal P(VMA-MMA) ratio of 1:10and 80% theoretical crosslinking degree, the dielectric constant reaches 3.4 at 10^(-3 )Hz, while the breakdown strength reaches 670.2 MV/m. Furthermore, the film exhibits an energy storage density of 7.1 J/cm3at 500 MV/m while maintaining a charge-discharge efficiency exceeding 90%.This study demonstrates a green and reliable strategy for designing biomass-based dielectric materials and opens new avenues for the development of eco-friendly energy-storage technologies.展开更多
As a popular approach to producing atmospheric pressure non-thermal plasma,dielectric barrier discharge(DBD)has been extensively used in various application fields.In this paper,DBD with wavy dielectric layers is nume...As a popular approach to producing atmospheric pressure non-thermal plasma,dielectric barrier discharge(DBD)has been extensively used in various application fields.In this paper,DBD with wavy dielectric layers is numerically simulated in atmospheric pressure helium mixed with trace nitrogen based on a fluid model.With varying relative position(phase difference(Δφ))of the wavy surfaces,there is a positive discharge and a negative discharge per voltage cycle,each of which consists of a pulse stage and a hump stage.For the pulse stage,maximal current increases with increasingΔφ.Results show that DBD with the wavy surfaces appears as discrete micro-discharges(MDs),which are self-organized to different patterns with varyingΔφ.The MDs are vertical and uniformly-spaced withΔφ=0,which are self-organized in pairs withΔφ=π/4.These MD pairs are merged into some bright wide MDs withΔφ=π/2.In addition,narrow MDs appear between tilted wide MDs withΔφ=3π/4.WithΔφ=π,the pattern is composed of wide and narrow MDs,which are vertical and appear alternately.To elucidate the formation mechanism of the patterns with differentΔφ,temporal evolutions of electron density and electric field are investigated for the positive discharge.Moreover,surface charge on the wavy dielectric layers has also been compared with differentΔφ.展开更多
A series of Cu-substituted Ni_(0.5-x)Cu_xZn_(0.5)Fe_2O_4(x=0.12,0.16,0.20,0.24 and 0.28) spinel ferrites were prepared by conventional ceramic method to investigate the effects of Cu compositional variation on the str...A series of Cu-substituted Ni_(0.5-x)Cu_xZn_(0.5)Fe_2O_4(x=0.12,0.16,0.20,0.24 and 0.28) spinel ferrites were prepared by conventional ceramic method to investigate the effects of Cu compositional variation on the structure and dielectric properties.XRD patterns demonstrate that all the samples are crystallized in single-phase cubic spinel structure and the lattice constant increases with increasing Cu content.White grains observed by SEM are Cu-rich phase.The dielectric constant versus frequency curve displays a normal dielectric behavior of spinel ferrites.While the frequency dependence of dielectric loss tangent is found to be abnormal,exhibiting a peak at certain frequency for all Cu-substituted Ni-Zn ferrites.A maximum of the resistivity is observed at x=0.2 due to the decrease of hopping electrons between Fe^(2+) and Fe^(3+) in per unit volume,which is in contrast with the Cu content dependence of dielectric constant and dielectric loss.展开更多
The development of low-temperature solid oxide fuel cells(LT-SOFCs)is of significant importance for realizing the widespread application of SOFCs.This has stimulated a substantial materials research effort in developi...The development of low-temperature solid oxide fuel cells(LT-SOFCs)is of significant importance for realizing the widespread application of SOFCs.This has stimulated a substantial materials research effort in developing high oxide-ion conductivity in the electrolyte layer of SOFCs.In this context,for the first time,a dielectric material,CaCu_(3)Ti_(4)O_(12)(CCTO)is designed for LT-SOFCs electrolyte application in this study.Both individual CCTO and its heterostructure materials with a p-type Ni_(0.8)Co_(0.15)Al_(0.05)LiO_(2−δ)(NCAL)semiconductor are evaluated as alternative electrolytes in LT-SOFC at 450–550℃.The single cell with the individual CCTO electrolyte exhibits a power output of approximately 263 mW cm^(-2) and an open-circuit voltage(OCV)of 0.95 V at 550℃,while the cell with the CCTO–NCAL heterostructure electrolyte capably delivers an improved power output of approximately 605 mW cm^(-2) along with a higher OCV over 1.0 V,which indicates the introduction of high hole-conducting NCAL into the CCTO could enhance the cell performance rather than inducing any potential short-circuiting risk.It is found that these promising outcomes are due to the interplay of the dielectric material,its structure,and overall properties that led to improve electrochemical mechanism in CCTO–NCAL.Furthermore,density functional theory calculations provide the detailed information about the electronic and structural properties of the CCTO and NCAL and their heterostructure CCTO–NCAL.Our study thus provides a new approach for developing new advanced electrolytes for LT-SOFCs.展开更多
Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive ...Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.展开更多
Introduction Frequency-dependent dielectric response is one of the important properties of ferroelectrics,reflecting the polarization response to high-frequency electric fields.Polarizations are closely related to fer...Introduction Frequency-dependent dielectric response is one of the important properties of ferroelectrics,reflecting the polarization response to high-frequency electric fields.Polarizations are closely related to ferroelectric domain structures,such as single domain,which represents the region with homogeneous polarizations direction.Ferroelectrics usually possess complex domain structures with domain walls(DWs)separating adjacent homogeneously polarized domains.DWs have attracted much attention during the past two decades due to their properties and potential for device designing.The related issues include DW motion,nonvolatile memory,topological defects,enhanced susceptibility,enhanced quality factor,low dielectric loss,and others.(Ba0.8,Sr0.2)TiO3(BST0.8)is a ferroelectric usually with multi-domain structures.Previous work identified two typical types of domain walls(DWs),i.e.,90°DWs and 180°DWs.The enhancement of dielectric response in systems with 90°DWs is now well understood,and the behavior of dielectric response in multi-domain systems with 180°DWs remains unclear.Therefore,gaining insights into how 180°DWs affect the dielectric response can clarify the effects in multidomain systems.Methods We performed molecular dynamics simulations using the ALFE-H code with the first-principles-based effective Hamiltonian method to study the BST0.8 system.All the calculations were performed in the NPT ensemble using the Evans-Hoover thermostat,and periodic boundary condition(PBC)along all three directions.To simulate the substrate,a uniform biaxial strain was fixed to the 1.55%in-plane strain.To analyze the multi-domain with different DWs,the simulations started with a self-constructed initial multi-domain polarization configuration.Subsequent 50 ps MD simulation was performed under chosen strains for structural relaxation.In the initial configuration,the magnitude of non-zero components of soft mode on each site was set to 0.1Å,atomic occupations(alloying)were randomized,and unless otherwise specified,all other mode variables were set to zero.The trajectory of local mode averaged over the supercell during MD simulations was extracted to calculate the dielectric response.The 8 ns MD simulations were performed to obtain an autocorrelation function for any time t ranging from 0 to 1 ns by one step of 10 fs.The fast Fourier transformation(FFT)was performed to calculate the dielectric response.Then two uncoupled damped harmonic oscillators(DHOs)were used to fit the data of dielectric response.Results and discussion The dielectric response of single domain at 300 K with the different electric fields along[110]from 0 to 2 MV/cm was computed.The computational results can be well fitted with the model of two uncoupled DHOs.The real and imaginary parts of the predicted dielectric response at each chosen electric field both exhibit two peaks.As the electric field increases,the low-frequency mode with 300 GHz at zero field in the system gradually disappears,and a high-frequency mode of larger than 8 THz appears when electric field is larger than 1 MV/cm.The high frequencies modes of 3 THz at zero filed and 8 THz under 1 MV/cm shift towards higher frequencies as the electric field increases.In other words,the present simulations reveal that it is possible to manipulate the frequency of peaks in dielectric response via changing the magnitude of the external electric field.The dielectric responses of multi-domain with 90°DWs and 180°DWs are further analyzed.According to the experimental PFM results,the multi-domain structures are simulated and the dielectric response through MD simulations is calculated.The analysis of the dielectric response of single domain structure and multi-domain structures shows that the single domain structures exhibit high-frequency peaks at>300 GHz,whereas the multi-domain structures exhibit low-frequency peaks at 8 GHz and 120 GHz for 180°DWs system and at 10 GHz for 90°DWs system,revealing that there exists a low-frequency mode related to collective oscillation of DWs in multi-domain structures.In addition,the frequencies of peaks in multi-domain with DWs are in a gigahertz range,whereas the single domain structure exhibits peaks in a terahertz range.The contribution of DWs to the dielectric response primarily arises from the timescale of DWs motion,such as sliding or breathing,which differs significantly from the high-frequency vibrations of optical phonon modes.The vibrational frequency of DWs is much lower,with relaxation times in the order of nanoseconds,resulting in a response frequency in GHz range,which is far below the terahertz range of optical phonon modes.Therefore,DWs oscillations dominate the dielectric response at a low frequency.Moreover,multi-domain structure with 180°DWs exhibits a unique low frequency mode at 120 GHz,which is significantly different from single domain and 90°DWs system.In other words,multi-domain structures with 180°DWs and 90°DWs exhibit different dielectric responses.There exists a common low-frequency mode related to the oscillations of DWs in BST0.8.Conclusions It was possible to manipulate the frequency of peaks in dielectric response of single domain through changing the magnitude of the external electric field.Domain walls oscillations dominated the dielectric response in a low frequency gigahertz range,whereas the single domain structures exhibited resonant peaks in a terahertz range.Moreover,multi-domain structures with different domain walls in BST0.8 had different dielectric responses,but the both have a same low-frequency mode at 10 GHz related to the domain walls oscillations.The results of this study indicated the dielectric response behaviors of ferroelectrics induced in an external electric field and internal multi-domain configurations and provided the potential mechanisms and guidance for optimizing application performance.展开更多
Introduction Pure NBT exhibits the frequency-dependent Curie temperature,indicating that its dielectric properties are affected by temperature,measurement frequency,and material processing condition.To enhance the die...Introduction Pure NBT exhibits the frequency-dependent Curie temperature,indicating that its dielectric properties are affected by temperature,measurement frequency,and material processing condition.To enhance the dielectric and relaxor properties of NBT,various dopants such as Sr,K,Li and Bi are incorporated into the NBT structure.These modifications significantly alter the dielectric constant and relaxation behavior,demonstrating a dominant influence of dopant on the material properties.Among these,the solid solution of BaTiO_(3)(BT)with NBT is widely investigated due to its ability to stabilize the perovskite structure and improve dielectric performance.However,the temperature-dependent stability of dielectric properties remains a critical challenge for high-temperature applications.In this study,(1-x)(0.75Na_(0.5)Bi_(0.5)TiO_(3)-0.25BaTiO_(3))-xBaZrO_(3)(NBT-BT-xBZ,x=0,0.08,0.14,and 0.20)ceramics were prepared by a solid-state reaction method.The effect of BaZrO_(3)(BZ)addition on the structural,dielectric,and energy storage properties was systematically investigated.In addition,the phase transition and relaxation behaviors were also analyzed based on the modified Curie-Weiss law,Vogel-Fulcher relation,and Lorentz-type empirical law.Methods The starting materials were powders of high purity Na_(2)CO_(3),Bi_(2)O_(3),TiO_(2),BaCO_(3),and ZrO_(2).The powders were weighed according to a stoichiometric ratio(with 1%excess of Na and Bi)and ground with ethanol in a ball mill at 300 r/min for more than 12 h,and the weight ratio of raw material to ethanol and zirconium balls was 1:1:2.The dried material was heat-treated at 850℃ for 2 h to promote the formation of NBT-BT-BZ.After further grinding for 12 h,the samples were mixed with a small amount of polyvinyl alcohol(PVA).The samples were sintered in air at 1150℃for 2 h and cooled to room temperature.The phase composition of the ceramic samples was determined by an model D8 ADVANDCE X-ray diffractometer(D8 ADVANDCEXRD,Bruker AXS Ltd.,Germany)with Cu target Kαrays,at X-ray wavelengthλof 1.5406Å,2θin the range of 10°to 80°,applied voltage of 40 kV,and a current of 500 mA.A silver paste was coated on the two surfaces as electrodes and heat-treated at 700℃ for 10 min.The dielectric properties of the ceramic samples were determined at different frequencies by a model DMS-1000 high-temperature dielectric temperature spectroscope(BALAB Tech.Co.,China)with at a ramp rate of 3(°)/min in a temperature range from room temperature to 450℃.The overdamped(200Ω)discharge tests for bulk ceramic samples were performed by a model CFD-005 discharge tester(Gogo(GG)Instruments Technology,China)).Results and discussion The XRD patterns indicate that all the ceramic samples have a perovskite structure without any detectable secondary phase,proving that zirconium ions can completely enter the lattice and form a solid solution.Based on the locally magnified XRD peaks,the XRD peak shape shifts towards lower angles as a whole as the BZ content increases.This indicates that the overall volume of the crystal cell shows an expansion as the Zr ions replace Ti ions due to different ionic radii of Zr and Ti ions.The SEM images show that the grain size gradually increases with increasing the BZ content.The addition of BZ promotes the grain growth.However,this gradually slows down with the increase of content up to x of 0.20.The limited grain size variation appears in the latter two samples.All the samples show a relatively dense morphology.The Curie temperature of the NBT-0.25BT ceramic samples is 256℃,which is similar to the reported results.The Curie temperature decreases gradually with the increase of BZ additive,and the dielectric temperature spectrum flattens out,indicating that the enhanced structural and temperature stability of the NBT-BT-BZ ceramics.The maximum values of all dielectric constants correspond to temperatures that increase with frequency,indicating a dielectric relaxor behavior.A frequency dispersion is accompanied at near the Curie temperature,which can be ascribed to the thermal evolution of the tetragonal polar nanoregions(PNRs)and the mixing effect of the transition from tripartite to tetragonal PNRs.Theγvalues obtained from the experimental data at 100 kHz are 1.79,1.83,1.89,and 1.92 for NBT-BT,NBT-BT-0.08BZ,NBT-BT-0.14BZ,and NBT-BT-0.20BZ,respectively.Theγvalue increases gradually with the addition of the BZ content,showing an enhanced relaxation of the NBT-BT-BZ ceramics.The comparison of discharge current curves and energy density of all the ceramics indicate that the addition of BZ significantly improves the discharge current and energy storage performance.A high discharging energy density(Wd)of 1.6 J·cm^(-3) with a fast discharging speed(τ0.9)of 75 ns is obtained for the ceramic samples with x of 0.14.This can be attributed to an increased relaxation as the BZ content increases.Conclusions NBT-BT-BZ ceramics were prepared by a solid-state reaction method.The XRD patterns revealed a phase transition from a tetragonal phase to a pseudocubic phase as the BZ content increased.The dielectric relaxation behavior of the ceramics could be described by three empirical laws(i.e.,modified Curie-Weiss law,Vogel-Fulcher relation and Lorentz-type empirical law).The dielectric relaxation followed the modified Curie-Weiss law and the Vogel-Fulcher relationship.The parametersγand Ea,which were obtained to evaluate the relaxation behavior,increased at a higher BZ content.The Lorentz-type relationship effectively described the temperature dependence of the dielectric constant on both the low-and high-temperature sides within a specific temperature range for all the ceramics.展开更多
Ceramic dielectric materials with high dielectric strength and mechanisms of their internal factors affecting dielectric strength are significantly valuable for industrial application,especially for selection of suita...Ceramic dielectric materials with high dielectric strength and mechanisms of their internal factors affecting dielectric strength are significantly valuable for industrial application,especially for selection of suitable dielectric materials for high-power microwave transmission devices and reliable power transmission.Pure magnesium oxide(MgO),a kind of ceramic dielectric material,possesses great application potential in high-power microwave transmission devices due to its high theoretical dielectric strength,low dielectric constant,and low dielectric loss properties,but its application is limited by high sintering temperature during preparation.This work presented the preparation of a new type of multiphase ceramics based on MgO,which was MgO-1%ZrO_(2)-1%CaCO_(3-x)%MnCO_(3)(MZCM_(x),x=0,0.25,0.50,1.00,1.50,in molar),and their phase structures,morphological features,and dielectric properties were investigated.It was found that inclusion of ZrO_(2) and CaCO_(3) effectively inhibited excessive growth of MgO grains by formation of second phase,while addition of MnCO_(3) promoted the grain boundary diffusion process during the sintering process and reduced activation energy for the grain growth,resulting in a lower ceramic sintering temperature.Excellent performance,including high dielectric strength(Eb=92.3 kV/mm)and quality factor(Q×f=216642 GHz),simultaneously accompanying low dielectric loss(<0.03%),low temperature coefficient of dielectric constant(20.3×10^(–6)℃^(–1),85℃)and resonance frequency(–12.54×10^(–6)℃^(–1)),was achieved in MZCM1.00 ceramics under a relatively low sintering temperature of 1350℃.This work offers an effective solution for selecting dielectric materials for high-power microwave transmission devices.展开更多
Meta-devices have significantly revitalized the study of nonlinear optical phenomena.At the nanoscale,the detrimental effects of phase mismatching between fundamental and harmonic waves can be substantially reduced.Th...Meta-devices have significantly revitalized the study of nonlinear optical phenomena.At the nanoscale,the detrimental effects of phase mismatching between fundamental and harmonic waves can be substantially reduced.This review analyzes the theoretical frameworks of how plasmonic and dielectric materials induce nonlinear optical properties.Plasmonic and dielectric nonlinear meta-devices that can excite strong resonant modes for efficiency enhancement are explored.We outline different strategies designed to shape the radiation pattern in order to increase the collection capability of nonlinear signals emitted from meta-devices.In addition,we discuss how nonlinear phase manipulation in meta-devices can integrate the benefits of efficiency enhancement and radiation shaping,not only boosting the energy density of the nonlinear signal but also facilitating a wide range of applications.Finally,potential research directions within this field are discussed.展开更多
Flexible pressure sensors show great promise for applications in such fields as electronic skin,healthcare,and intelligent robotics.Traditional capacitive pressure sensors,however,face the problem of low sensitivity,w...Flexible pressure sensors show great promise for applications in such fields as electronic skin,healthcare,and intelligent robotics.Traditional capacitive pressure sensors,however,face the problem of low sensitivity,which limits their wider application.In this paper,a flexible capacitive pressure sensor with microstructured ionization layer is fabricated by a sandwich-type process,with a low-cost and simple process of inverted molding with sandpapers being used to form a thermoplastic polyurethane elastomer ionic film with double-sided microstructure as the dielectric layer of the sensor,with silver nanowires as electrodes.The operating mechanism of this iontronic pressure sensor is analyzed using a graphical method,and the sensor is tested on a pressure platform.The test results show that the sensor has ultrahigh pressure sensitivities of 3.744 and 1.689 kPa^(−1) at low(0-20 kPa)and high(20-800 kPa)pressures,respectively,as well as a rapid response time(100 ms),and it exhibits good stability and repeatability.The sensor can be used for sensitive monitoring of activities such as finger bending,and for facial expression(smile,frown)recognition,as well as speech recognition.展开更多
The phenomena of thermal runaway and accidental deformation due to external stresses in lithium batteries or film capacitors consti-tute their primary failure mechanisms.Therefore,monitoring and early warning of overh...The phenomena of thermal runaway and accidental deformation due to external stresses in lithium batteries or film capacitors consti-tute their primary failure mechanisms.Therefore,monitoring and early warning of overheating or localized strain are of great value for the safe use of lithium batteries or film capacitors;however,this function usually requires a system of multiple complex sensors.The realization of the above multiple hazards using a single sensor for monitoring and alarm functions has not been reported.Here,we exploit the thermally induced conductivity and modulus change during solid-liquid conversion of low melting point polyalloys to modulate the electronic relaxation polariza-tion and interfacial polarization in the composites for dielectric switching,and the reduction of alloy particle spacing during bending/compres-sive strain can be used to generate switchable tunneling effects for insulator-conductor transition.By synergizing dielectric switching and insula-tor-conductor transition,the final flexible thermoplastic polyurethane elastomer/low-melting-point polyalloy composite film achieves the func-tional integration of multi-level overheating warning and small deformation monitoring.展开更多
A 4H-SiC superjunction(SJ)MOSFET(SJMOS)with integrated high-K gate dielectric and split gate(HKSG-SJMOS)is proposed in this paper.The key features of HKSG-SJMOS involve the utilization of high-K(HK)dielectric as the g...A 4H-SiC superjunction(SJ)MOSFET(SJMOS)with integrated high-K gate dielectric and split gate(HKSG-SJMOS)is proposed in this paper.The key features of HKSG-SJMOS involve the utilization of high-K(HK)dielectric as the gate dielectric,which surrounds the source-connected split gate(SG)and metal gate.The high-K gate dielectric optimizes the electric field distribution within the drift region,creating a low-resistance conductive channel.This enhancement leads to an increase in the breakdown voltage(BV)and a reduction in the specific on resistance(R_(on,sp)).The introduction of split gate surrounded by high-K dielectric reduces the gate-drain capacitance(C_(gd))and gate-drain charge(Q_(gd)),which improves the switching characteristics.The simulation results indicate that compared to conventional 4H-SiC SJMOS,the HKSG-SJMOS exhibits a 110.5%enhancement in figure of merit(FOM,FOM=BV^(2)/R_(on,sp)),a 93.6%reduction in the high frequency figure of merit(HFFOM)of R_(on,sp)·C_(gd),and reductions in turn-on loss(E_(on))and turn-off loss(E_(off))by 38.3%and 31.6%,respectively.Furthermore,the reverse recovery characteristics of HKSG-SJMOS has also discussed,revealing superior performance compared to conventional 4H-SiC SJMOS.展开更多
In this research work,sol-gel technique was employed to prepare the strontium based spinel ferrite nanoparticles(SrFe_(2)O_(4))with different ratios of terbium(Tb).Different characterization techniques were used to in...In this research work,sol-gel technique was employed to prepare the strontium based spinel ferrite nanoparticles(SrFe_(2)O_(4))with different ratios of terbium(Tb).Different characterization techniques were used to investigate the structural,morphological,dielectric and magnetic properties of the prepared samples.X-ray diffraction(XRD)result suggests that face-centered cube spinel nanocrystalline structure is formed.Crystallite size of the SrFe_(2)O_(4)decreases with rising of Tb ratio.The morphology,shape and size of the SrFe_(2)O_(4)were examined by scanning electron microscopy(SEM)analysis and results reveal inhomogeneous distributions of the nanostructures with high agglomeration.The electrical resistivity of the SrFe_(2)O_(4)increases with rising of Tb ratio,which is confirmed from the cyclic voltammetry.It is observed that dielectric constant of all the samples decreases with the increasing frequency range.It is determined that the dielectric constants of the spinel ferrites are frequency dependent and decrease with increasing the frequency of applied electric field.The magnetic behavior of SrFe_(2)O_(4)with different ratios of Tb was studied and it is found that the saturation magnetization values of samples decrease with increase in the substitution of Tb^(3+)at octahedral sites for Fe^(3+).This decrease in the values of M_(s) is also attributed to spin at surface of nanoparticles.展开更多
The present work reports the structural,optical,dielectric,and electrical properties of Eu-Er substituted M-type Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19)(x=0.0.05,0.1,0.15,and 0.2)hexaferrites synthesized by sol-g...The present work reports the structural,optical,dielectric,and electrical properties of Eu-Er substituted M-type Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19)(x=0.0.05,0.1,0.15,and 0.2)hexaferrites synthesized by sol-gel combustion method.The hexagonal structure of the Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19) samples was confirmed from X-ray diffraction(XRD)analysis.The values of lattice parameters of the Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19)samples are increased as compared to Ba_(0.5)Sr_(0.5)Fe_(12)O_(19) sample.This increase in the value of lattice parameters is attributed to the substitution of larger cations(Eu^(3+)and Er^(3+))in place of smaller cations(Fe^(3+)ions).The crystallite sizes of the Ba0.5Sr0.5EuxErxFe12-2x019 samples also increase due to the substitution of larger cations.The force constants(K_o and K_t)increases with increasing Eu-Er concentration.The octahedral cluster shifts towards the higher wavenumber side whereas the tetrahedral cluster shifts towards the lower wavenumber side due to Eu-Er substitution in the Fourier transform infrared(FTIR)spectra.The photoluminescence(PL)emission spectra for the Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19) samples are observed at 365 nm.The dielectric dispersion in the Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19) samples can be understood by Koop's theory and Maxwell-Wagner type of inte rfacial polarization.Using Jonscher's power law and the co rrelated barrier hopping(CBH)model,the frequency and temperature-dependent be haviour of ac conductivity of Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19) samples are described.The temperature-dependent behaviour of the dc conductivity of the Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19) samples is explained by the variable range hopping(VRH)model.The Motto temperature of the sample varies from 4.55×10^(9) to 2.31×10^(8) K.The estimated maximum barrier height(WM)of the compound varies from 0.6603 to 0.1199 eV.The temperature coefficient and activation energy of the samples were also calculated as a function of Eu-Er concentration.展开更多
Low dielectric constant(low-k)materials are critical for advanced packaging in high-density microelectronic devices and high-frequency communication technologies.Ladder polysiloxanes,which are characterized by their u...Low dielectric constant(low-k)materials are critical for advanced packaging in high-density microelectronic devices and high-frequency communication technologies.Ladder polysiloxanes,which are characterized by their unique double-chain structure and intrinsic microporosity,offer remarkable advantages in terms of thermal stability,oxidation resistance,and dielectric performance.However,structural defects in ladder polysiloxanes,such as cage-like and irregular oligomers,and their effects on dielectric properties remain underexplored.In this study,a series of ladder-like polysiloxanes(X-TMS)with diverse side groups weresynthesized via a one-step base-catalyzed method.The influence of the benzocyclobutene(BCB)side groups on the formation of regular ladder structures was systematically investigated.Notably,BCB incorporation disrupted the structural regularity,favoring the formation of cage-like and irregular topologies,which were extensively characterized using 29silicon nuclear magnetic resonance spectroscopy(^(29)Si-NMR),Fourier transform infrared spectroscopy(FTIR),gel permeation chromatography(GPC),and X-ray diffraction(XRD).These structural defects were beneficial for improving the hydrophobicity and thermal stability.Copolymerization of X-TMS with commercial DVS-BCB resins further enhanced the mechanical properties,with the elastic modulus increasing from 3.6 GPa to 4.4 GPa and water absorption reduced from 0.33 wt%to 0.06 wt%.This study establishes a clear correlation between topological structures and material properties.These findings not only advance the understanding of the structure-property relationships in ladder polysiloxanes but also provide a novel approach for designing high-performance interlayer dielectric materials for next-generation microelectronics.展开更多
In high-frequency electrical energy systems,polyimide(PI)composite insulation materials need to possess a low dielectric constant,sufficient thermal conductivity,and robust interfacial adhesion to ensure reliable perf...In high-frequency electrical energy systems,polyimide(PI)composite insulation materials need to possess a low dielectric constant,sufficient thermal conductivity,and robust interfacial adhesion to ensure reliable performance under elevated temperatures and pressures.These aspects are crucial for preventing local overheating and electrical breakdown,thereby ensuring reliable equipment operation.Traditional PI insulation materials often exhibit high dielectric constants and pronounced dielectric losses,compromising their insulation efficiency.In this study,molecular dynamics simulations were employed to incorporate polyhedral oligomeric silsesquioxanes(POSS)into PI through physical blending and chemical bonding to enhance dielectric properties.Key parameters of the PI/POSS composite system,including dielectric constant,thermal conductivity,glass transition temperature,Young’s modulus,Poisson’s ratio,and interfacial adhesion energy,were systematically evaluated for both doping methods.The degradation behavior of the PI composites under high-temperature and electric field conditions was also simulated to elucidate degradation pathways and product distributions,providing insights for designing low-dielectric insulation materials.Doping with POSS significantly reduces the dielectric constant of PI,thereby improving insulation performance,thermal stability,mechanical strength,and interfacial adhesion.At an optimal POSS doping ratio,the thermal conductivity of PI is enhanced.Compared with the physical blending system,the chemical bonding system yields more substantial improvements across all evaluated properties.Under high-temperature and strong electric field conditions,POSS doping enhances interfacial adhesion and thermal stability,effectively suppressing the cleavage of key chemical bonds,reducingCOemissions,and increasing the formation of oxygen-containing intermediates and water molecules,which contributes to improved environmental sustainability.展开更多
To adapt to the trend of increasing miniaturization and high integration of microelectronic equipments,there is a high demand for multifunctional thermally conductive(TC)polymeric films combining excellent flame retar...To adapt to the trend of increasing miniaturization and high integration of microelectronic equipments,there is a high demand for multifunctional thermally conductive(TC)polymeric films combining excellent flame retardancy and low dielectric constant(ε).To date,there have been few successes that achieve such a performance portfolio in polymer films due to their different and even mutually exclusive governing mechanisms.Herein,we propose a trinity strategy for creating a rationally engineered heterostructure nanoadditive(FG@CuP@ZTC)by in situ self-assembly immobilization of copper-phenyl phosphonate(CuP)and zinc-3,5-diamino-1,2,4-triazole complex(ZTC)onto the fluorinated graphene(FG)surface.Benefiting from the synergistic effects of FG,CuP,and ZTC and the bionic lay-by-lay(LBL)strategy,the as-fabricated waterborne polyurethane(WPU)nanocomposite film with 30 wt%FG@CuP@ZTC exhibits a 55.6%improvement in limiting oxygen index(LOI),66.0%and 40.5%reductions in peak heat release rate and total heat release,respectively,and 93.3%increase in tensile strength relative to pure WPU film due to the synergistic effects between FG,CuP,and ZTC.Moreover,the WPU nanocomposite film presents a high thermal conductivity(λ)of 12.7 W m^(−1) K^(−1) and a lowεof 2.92 at 106 Hz.This work provides a commercially viable rational design strategy to develop high-performance multifunctional polymer nanocomposite films,which hold great potential as advanced polymeric thermal dissipators for high-power-density microelectronics.展开更多
It is urgent to develop high-performance polyimide(PI)films that simultaneously exhibit high transparency,exceptional thermal stability,mechanical robustness,and low dielectric to fulfil the requirements of flexible d...It is urgent to develop high-performance polyimide(PI)films that simultaneously exhibit high transparency,exceptional thermal stability,mechanical robustness,and low dielectric to fulfil the requirements of flexible display technologies.Herein,a series of fluorinated polyimide films(FPIs)were fabricated by the condensation of 5,5′-(perfluoropropane-2,2-diyl)bis(isobenzofuran-1,3-dione)(6FDA)and the fluorinated triphenylmethane diamine monomer(EDA,MEDA and DMEDA)with heat-crosslinkable tetrafluorostyrene side groups,which was incorporated by different numbers of methyl groups pendant in the ortho position of amino groups.Subsequently,the FPI films underwent heating to produce crosslinking FPIs(C-FPIs)through the self-crosslinking of double bonds in the tetrafluorostyrene.The transparency,solvent resistance,thermal stability,mechanical robustness and dielectric properties of FPI and C-FPI films can be tuned by the number of methyl groups and crosslinking,which were deeply investigated by virtue of molecular dynamics(MD)simulations and density functional theory(DFT).As a result,all the films exhibited exceptional optically colorless and transparent,with transmittance in the visible region of 450-700 nm exceeding 79.9%,and the cut-off wavelengths(λ_(off))were nearly 350 nm.The thermal decomposition temperatures at 5% weight loss(T_(d5%))for all samples exceeded 504℃.These films exhibited a wide range of tunable tensile strength(46.5-75.1 MPa).Significantly,they showed exceptional dielectric properties with the dielectric constant of 2.3-2.5 at full frequency(10^(7)-20 Hz).This study not only highlights the relationship between the polymer molecular structure and properties,but offer insights for balancing optical transparency,heat resistance and low dielectric constant in PI films.展开更多
基金supported by the National Key Basic Research Program of China (2022YFA1402904)Basic Research Project of Shanghai Science and Technology Innovation Action (grant number 24CL2900900)the National Natural Science Foundation of China (grant number 61904034)
文摘Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices.During bipolar high electric-field cycling in numbers close to dielectric breakdown,the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf_(0.5)Zr_(0.5)O_(2) thin-film capacitors.Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the diameter of 3.85μm when the ferroelectricity suddenly disappears without high-field cycling.The stored charge density is as high as 183μC cm^(−2) at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 10^(12) without inducing dielectric breakdown.The study of synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase.The image of electron energy loss spectroscopy shows the preferred oxygen-vacancy accumulation at the regions near top/bottom electrodes as well as grain boundaries.The ultrahigh dielectric-permittivity material enables high-density integration of extremely scaled logic and memory devices in the future.
基金National Natural Science Foundation of China (52302140)Major Scientific and Technological Innovation Project of Wenzhou (ZG2023040, ZG2023042)Joint Funds of the National Natural Science Foundation of China Key Program (U21B2068)。
文摘The feldspar-based microwave dielectric ceramic with low relative permittivity(εr)and excellent mechanical properties has attracted much attention in the fifth-generation wireless communication technology.In this work,a series of microwave dielectric ceramic SrAl_(2-x)Ga_(x)Si_(2)O_(8)(0.1≤x≤2.0)was synthesized using the traditional solid-state method.X-ray diffraction pattern indicates that Ga^(3+)can be dissolved into Al^(3+),forming a solid solution.Meanwhile,substitution of Ga^(3+)for Al^(3+)can promote the space group transition from I2/c(0.1≤x≤1.4)to P21/a(1.6≤x≤2.0)with coefficient of thermal expansion(CTE)increasing from 2.9×10^(-6)℃^(-1) to 5.2×10^(-6)℃^(-1).During this substitution,the phase transition can significantly improve the structural symmetry to enhance the dielectric properties and mechanical properties.Rietveld refinement results indicate that Ga^(3+)averagely occupied four Al^(3+)compositions to form solid solution.All ceramics have a dense microstructure and high relative density above 95%.An ultralower of 5.8 was obtained at x=1.6 composition with high quality factor(Q´f)of 50700 GHz and negative temperature coefficients of resonant frequency(tf)of approximately−35×10^(-6)℃^(-1).The densification temperature can be reduced to 940℃by adding 4%(in mass)LiF,resulting in good chemical compatibility with Ag electrode.Meanwhile,negativetf can be tuned to near-zero(+3.7×10^(-6)℃^(-1))by adding CaTiO_(3) ceramic.
基金supported by the National Natural Science Foundation of China(No.52203011).
文摘Dielectric films are critical components in the fabrication of capacitors. However, their reliance on petroleum-derived polymers presents significant environmental challenges. To address this issue, we report on a high-performance biomass-based dielectric material derived from vanillin(VA), a renewable aromatic aldehyde. Vanillin was first esterified to synthesize vanillin methacrylate(VMA), which was then copolymerized with methyl methacrylate(MMA) via free-radical polymerization to yield P(VMA-MMA). By crosslinking the aldehyde groups in VMA with the amine groups in the polyether amine D400(PEA), we fabricated a series of P(VMA-MMA)@PEA dielectric films with precisely tunable crosslinking densities. The unique molecular structure of vanillin, featuring both a benzene ring and an ester group, facilitates strong δ-π interactions and dipolar polarization, synergistically enhancing energy storage density while minimizing dielectric loss. At an optimal P(VMA-MMA) ratio of 1:10and 80% theoretical crosslinking degree, the dielectric constant reaches 3.4 at 10^(-3 )Hz, while the breakdown strength reaches 670.2 MV/m. Furthermore, the film exhibits an energy storage density of 7.1 J/cm3at 500 MV/m while maintaining a charge-discharge efficiency exceeding 90%.This study demonstrates a green and reliable strategy for designing biomass-based dielectric materials and opens new avenues for the development of eco-friendly energy-storage technologies.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12375250,11875121,51977057,11805013)the Natural Science Foundation of Hebei Province,China(Grant Nos.A2020201025 and A2022201036)+3 种基金the Hebei Province Optoelectronic Information Materials Laboratory Performance Subsidy Fund Project(Grant No.22567634H)the Funds for Distinguished Young Scientists of Hebei Province,China(Grant No.A2012201045)the Natural Science Interdisciplinary Research Program of Hebei University(Grant Nos.DXK201908 and DXK202011)the Post-graduate’s Innovation Fund Project of Hebei University(Grant No.HBU2022bs004)。
文摘As a popular approach to producing atmospheric pressure non-thermal plasma,dielectric barrier discharge(DBD)has been extensively used in various application fields.In this paper,DBD with wavy dielectric layers is numerically simulated in atmospheric pressure helium mixed with trace nitrogen based on a fluid model.With varying relative position(phase difference(Δφ))of the wavy surfaces,there is a positive discharge and a negative discharge per voltage cycle,each of which consists of a pulse stage and a hump stage.For the pulse stage,maximal current increases with increasingΔφ.Results show that DBD with the wavy surfaces appears as discrete micro-discharges(MDs),which are self-organized to different patterns with varyingΔφ.The MDs are vertical and uniformly-spaced withΔφ=0,which are self-organized in pairs withΔφ=π/4.These MD pairs are merged into some bright wide MDs withΔφ=π/2.In addition,narrow MDs appear between tilted wide MDs withΔφ=3π/4.WithΔφ=π,the pattern is composed of wide and narrow MDs,which are vertical and appear alternately.To elucidate the formation mechanism of the patterns with differentΔφ,temporal evolutions of electron density and electric field are investigated for the positive discharge.Moreover,surface charge on the wavy dielectric layers has also been compared with differentΔφ.
基金Project(M26012)supported by the Foundation of National Laboratory of Solid State Microstructures,China
文摘A series of Cu-substituted Ni_(0.5-x)Cu_xZn_(0.5)Fe_2O_4(x=0.12,0.16,0.20,0.24 and 0.28) spinel ferrites were prepared by conventional ceramic method to investigate the effects of Cu compositional variation on the structure and dielectric properties.XRD patterns demonstrate that all the samples are crystallized in single-phase cubic spinel structure and the lattice constant increases with increasing Cu content.White grains observed by SEM are Cu-rich phase.The dielectric constant versus frequency curve displays a normal dielectric behavior of spinel ferrites.While the frequency dependence of dielectric loss tangent is found to be abnormal,exhibiting a peak at certain frequency for all Cu-substituted Ni-Zn ferrites.A maximum of the resistivity is observed at x=0.2 due to the decrease of hopping electrons between Fe^(2+) and Fe^(3+) in per unit volume,which is in contrast with the Cu content dependence of dielectric constant and dielectric loss.
基金National Natural Science Foundation of China(NSFC)supported this work under Grant No.32250410309,11674086,51736006,and 51772080funding from Science and Technology Department of Jiangsu Province under Grant No.BE2022029Shenzhen University under Grant No.86902/000248 also supported part of this work.
文摘The development of low-temperature solid oxide fuel cells(LT-SOFCs)is of significant importance for realizing the widespread application of SOFCs.This has stimulated a substantial materials research effort in developing high oxide-ion conductivity in the electrolyte layer of SOFCs.In this context,for the first time,a dielectric material,CaCu_(3)Ti_(4)O_(12)(CCTO)is designed for LT-SOFCs electrolyte application in this study.Both individual CCTO and its heterostructure materials with a p-type Ni_(0.8)Co_(0.15)Al_(0.05)LiO_(2−δ)(NCAL)semiconductor are evaluated as alternative electrolytes in LT-SOFC at 450–550℃.The single cell with the individual CCTO electrolyte exhibits a power output of approximately 263 mW cm^(-2) and an open-circuit voltage(OCV)of 0.95 V at 550℃,while the cell with the CCTO–NCAL heterostructure electrolyte capably delivers an improved power output of approximately 605 mW cm^(-2) along with a higher OCV over 1.0 V,which indicates the introduction of high hole-conducting NCAL into the CCTO could enhance the cell performance rather than inducing any potential short-circuiting risk.It is found that these promising outcomes are due to the interplay of the dielectric material,its structure,and overall properties that led to improve electrochemical mechanism in CCTO–NCAL.Furthermore,density functional theory calculations provide the detailed information about the electronic and structural properties of the CCTO and NCAL and their heterostructure CCTO–NCAL.Our study thus provides a new approach for developing new advanced electrolytes for LT-SOFCs.
基金financially supported by the National Natural Science Foundation of China(Nos.52272160,U2330112,and 52002254)Sichuan Science and Technology Foundation(Nos.2020YJ0262,2021YFH0127,2022YFH0083,2022YFSY0045,and 2023YFSY0002)+1 种基金the Chunhui Plan of Ministry of Education,Fundamental Research Funds for the Central Universities,China(No.YJ201893)the Foundation of Key Laboratory of Lidar and Device,Sichuan Province,China(No.LLD2023-006)。
文摘Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.
文摘Introduction Frequency-dependent dielectric response is one of the important properties of ferroelectrics,reflecting the polarization response to high-frequency electric fields.Polarizations are closely related to ferroelectric domain structures,such as single domain,which represents the region with homogeneous polarizations direction.Ferroelectrics usually possess complex domain structures with domain walls(DWs)separating adjacent homogeneously polarized domains.DWs have attracted much attention during the past two decades due to their properties and potential for device designing.The related issues include DW motion,nonvolatile memory,topological defects,enhanced susceptibility,enhanced quality factor,low dielectric loss,and others.(Ba0.8,Sr0.2)TiO3(BST0.8)is a ferroelectric usually with multi-domain structures.Previous work identified two typical types of domain walls(DWs),i.e.,90°DWs and 180°DWs.The enhancement of dielectric response in systems with 90°DWs is now well understood,and the behavior of dielectric response in multi-domain systems with 180°DWs remains unclear.Therefore,gaining insights into how 180°DWs affect the dielectric response can clarify the effects in multidomain systems.Methods We performed molecular dynamics simulations using the ALFE-H code with the first-principles-based effective Hamiltonian method to study the BST0.8 system.All the calculations were performed in the NPT ensemble using the Evans-Hoover thermostat,and periodic boundary condition(PBC)along all three directions.To simulate the substrate,a uniform biaxial strain was fixed to the 1.55%in-plane strain.To analyze the multi-domain with different DWs,the simulations started with a self-constructed initial multi-domain polarization configuration.Subsequent 50 ps MD simulation was performed under chosen strains for structural relaxation.In the initial configuration,the magnitude of non-zero components of soft mode on each site was set to 0.1Å,atomic occupations(alloying)were randomized,and unless otherwise specified,all other mode variables were set to zero.The trajectory of local mode averaged over the supercell during MD simulations was extracted to calculate the dielectric response.The 8 ns MD simulations were performed to obtain an autocorrelation function for any time t ranging from 0 to 1 ns by one step of 10 fs.The fast Fourier transformation(FFT)was performed to calculate the dielectric response.Then two uncoupled damped harmonic oscillators(DHOs)were used to fit the data of dielectric response.Results and discussion The dielectric response of single domain at 300 K with the different electric fields along[110]from 0 to 2 MV/cm was computed.The computational results can be well fitted with the model of two uncoupled DHOs.The real and imaginary parts of the predicted dielectric response at each chosen electric field both exhibit two peaks.As the electric field increases,the low-frequency mode with 300 GHz at zero field in the system gradually disappears,and a high-frequency mode of larger than 8 THz appears when electric field is larger than 1 MV/cm.The high frequencies modes of 3 THz at zero filed and 8 THz under 1 MV/cm shift towards higher frequencies as the electric field increases.In other words,the present simulations reveal that it is possible to manipulate the frequency of peaks in dielectric response via changing the magnitude of the external electric field.The dielectric responses of multi-domain with 90°DWs and 180°DWs are further analyzed.According to the experimental PFM results,the multi-domain structures are simulated and the dielectric response through MD simulations is calculated.The analysis of the dielectric response of single domain structure and multi-domain structures shows that the single domain structures exhibit high-frequency peaks at>300 GHz,whereas the multi-domain structures exhibit low-frequency peaks at 8 GHz and 120 GHz for 180°DWs system and at 10 GHz for 90°DWs system,revealing that there exists a low-frequency mode related to collective oscillation of DWs in multi-domain structures.In addition,the frequencies of peaks in multi-domain with DWs are in a gigahertz range,whereas the single domain structure exhibits peaks in a terahertz range.The contribution of DWs to the dielectric response primarily arises from the timescale of DWs motion,such as sliding or breathing,which differs significantly from the high-frequency vibrations of optical phonon modes.The vibrational frequency of DWs is much lower,with relaxation times in the order of nanoseconds,resulting in a response frequency in GHz range,which is far below the terahertz range of optical phonon modes.Therefore,DWs oscillations dominate the dielectric response at a low frequency.Moreover,multi-domain structure with 180°DWs exhibits a unique low frequency mode at 120 GHz,which is significantly different from single domain and 90°DWs system.In other words,multi-domain structures with 180°DWs and 90°DWs exhibit different dielectric responses.There exists a common low-frequency mode related to the oscillations of DWs in BST0.8.Conclusions It was possible to manipulate the frequency of peaks in dielectric response of single domain through changing the magnitude of the external electric field.Domain walls oscillations dominated the dielectric response in a low frequency gigahertz range,whereas the single domain structures exhibited resonant peaks in a terahertz range.Moreover,multi-domain structures with different domain walls in BST0.8 had different dielectric responses,but the both have a same low-frequency mode at 10 GHz related to the domain walls oscillations.The results of this study indicated the dielectric response behaviors of ferroelectrics induced in an external electric field and internal multi-domain configurations and provided the potential mechanisms and guidance for optimizing application performance.
基金国家自然科学基金(12104188,12474095 and 52402323)开放基金(2023KF03,KYCX24-4102)。
文摘Introduction Pure NBT exhibits the frequency-dependent Curie temperature,indicating that its dielectric properties are affected by temperature,measurement frequency,and material processing condition.To enhance the dielectric and relaxor properties of NBT,various dopants such as Sr,K,Li and Bi are incorporated into the NBT structure.These modifications significantly alter the dielectric constant and relaxation behavior,demonstrating a dominant influence of dopant on the material properties.Among these,the solid solution of BaTiO_(3)(BT)with NBT is widely investigated due to its ability to stabilize the perovskite structure and improve dielectric performance.However,the temperature-dependent stability of dielectric properties remains a critical challenge for high-temperature applications.In this study,(1-x)(0.75Na_(0.5)Bi_(0.5)TiO_(3)-0.25BaTiO_(3))-xBaZrO_(3)(NBT-BT-xBZ,x=0,0.08,0.14,and 0.20)ceramics were prepared by a solid-state reaction method.The effect of BaZrO_(3)(BZ)addition on the structural,dielectric,and energy storage properties was systematically investigated.In addition,the phase transition and relaxation behaviors were also analyzed based on the modified Curie-Weiss law,Vogel-Fulcher relation,and Lorentz-type empirical law.Methods The starting materials were powders of high purity Na_(2)CO_(3),Bi_(2)O_(3),TiO_(2),BaCO_(3),and ZrO_(2).The powders were weighed according to a stoichiometric ratio(with 1%excess of Na and Bi)and ground with ethanol in a ball mill at 300 r/min for more than 12 h,and the weight ratio of raw material to ethanol and zirconium balls was 1:1:2.The dried material was heat-treated at 850℃ for 2 h to promote the formation of NBT-BT-BZ.After further grinding for 12 h,the samples were mixed with a small amount of polyvinyl alcohol(PVA).The samples were sintered in air at 1150℃for 2 h and cooled to room temperature.The phase composition of the ceramic samples was determined by an model D8 ADVANDCE X-ray diffractometer(D8 ADVANDCEXRD,Bruker AXS Ltd.,Germany)with Cu target Kαrays,at X-ray wavelengthλof 1.5406Å,2θin the range of 10°to 80°,applied voltage of 40 kV,and a current of 500 mA.A silver paste was coated on the two surfaces as electrodes and heat-treated at 700℃ for 10 min.The dielectric properties of the ceramic samples were determined at different frequencies by a model DMS-1000 high-temperature dielectric temperature spectroscope(BALAB Tech.Co.,China)with at a ramp rate of 3(°)/min in a temperature range from room temperature to 450℃.The overdamped(200Ω)discharge tests for bulk ceramic samples were performed by a model CFD-005 discharge tester(Gogo(GG)Instruments Technology,China)).Results and discussion The XRD patterns indicate that all the ceramic samples have a perovskite structure without any detectable secondary phase,proving that zirconium ions can completely enter the lattice and form a solid solution.Based on the locally magnified XRD peaks,the XRD peak shape shifts towards lower angles as a whole as the BZ content increases.This indicates that the overall volume of the crystal cell shows an expansion as the Zr ions replace Ti ions due to different ionic radii of Zr and Ti ions.The SEM images show that the grain size gradually increases with increasing the BZ content.The addition of BZ promotes the grain growth.However,this gradually slows down with the increase of content up to x of 0.20.The limited grain size variation appears in the latter two samples.All the samples show a relatively dense morphology.The Curie temperature of the NBT-0.25BT ceramic samples is 256℃,which is similar to the reported results.The Curie temperature decreases gradually with the increase of BZ additive,and the dielectric temperature spectrum flattens out,indicating that the enhanced structural and temperature stability of the NBT-BT-BZ ceramics.The maximum values of all dielectric constants correspond to temperatures that increase with frequency,indicating a dielectric relaxor behavior.A frequency dispersion is accompanied at near the Curie temperature,which can be ascribed to the thermal evolution of the tetragonal polar nanoregions(PNRs)and the mixing effect of the transition from tripartite to tetragonal PNRs.Theγvalues obtained from the experimental data at 100 kHz are 1.79,1.83,1.89,and 1.92 for NBT-BT,NBT-BT-0.08BZ,NBT-BT-0.14BZ,and NBT-BT-0.20BZ,respectively.Theγvalue increases gradually with the addition of the BZ content,showing an enhanced relaxation of the NBT-BT-BZ ceramics.The comparison of discharge current curves and energy density of all the ceramics indicate that the addition of BZ significantly improves the discharge current and energy storage performance.A high discharging energy density(Wd)of 1.6 J·cm^(-3) with a fast discharging speed(τ0.9)of 75 ns is obtained for the ceramic samples with x of 0.14.This can be attributed to an increased relaxation as the BZ content increases.Conclusions NBT-BT-BZ ceramics were prepared by a solid-state reaction method.The XRD patterns revealed a phase transition from a tetragonal phase to a pseudocubic phase as the BZ content increased.The dielectric relaxation behavior of the ceramics could be described by three empirical laws(i.e.,modified Curie-Weiss law,Vogel-Fulcher relation and Lorentz-type empirical law).The dielectric relaxation followed the modified Curie-Weiss law and the Vogel-Fulcher relationship.The parametersγand Ea,which were obtained to evaluate the relaxation behavior,increased at a higher BZ content.The Lorentz-type relationship effectively described the temperature dependence of the dielectric constant on both the low-and high-temperature sides within a specific temperature range for all the ceramics.
基金Student Training Program for Innovation and Entrepreneurship of Hangzhou Institute for Advanced Study,UCAS(CXCY20230305)Chinese Academy of Sciences Key Project(ZDRW-CN-2021-3-1-18)。
文摘Ceramic dielectric materials with high dielectric strength and mechanisms of their internal factors affecting dielectric strength are significantly valuable for industrial application,especially for selection of suitable dielectric materials for high-power microwave transmission devices and reliable power transmission.Pure magnesium oxide(MgO),a kind of ceramic dielectric material,possesses great application potential in high-power microwave transmission devices due to its high theoretical dielectric strength,low dielectric constant,and low dielectric loss properties,but its application is limited by high sintering temperature during preparation.This work presented the preparation of a new type of multiphase ceramics based on MgO,which was MgO-1%ZrO_(2)-1%CaCO_(3-x)%MnCO_(3)(MZCM_(x),x=0,0.25,0.50,1.00,1.50,in molar),and their phase structures,morphological features,and dielectric properties were investigated.It was found that inclusion of ZrO_(2) and CaCO_(3) effectively inhibited excessive growth of MgO grains by formation of second phase,while addition of MnCO_(3) promoted the grain boundary diffusion process during the sintering process and reduced activation energy for the grain growth,resulting in a lower ceramic sintering temperature.Excellent performance,including high dielectric strength(Eb=92.3 kV/mm)and quality factor(Q×f=216642 GHz),simultaneously accompanying low dielectric loss(<0.03%),low temperature coefficient of dielectric constant(20.3×10^(–6)℃^(–1),85℃)and resonance frequency(–12.54×10^(–6)℃^(–1)),was achieved in MZCM1.00 ceramics under a relatively low sintering temperature of 1350℃.This work offers an effective solution for selecting dielectric materials for high-power microwave transmission devices.
基金supported by the University Grants Committee/Research Grants Council of the Hong Kong Special Administrative Region,China(AoE/P-502/20,C1015-21E,C5031-22G,CityU15303521,CityU11305223,CityU11310522,CityU11300123,and G-CityU 101/22)the City University of Hong Kong(9380131 and 7005867)the National Natural Science Foundation of China(62375232).
文摘Meta-devices have significantly revitalized the study of nonlinear optical phenomena.At the nanoscale,the detrimental effects of phase mismatching between fundamental and harmonic waves can be substantially reduced.This review analyzes the theoretical frameworks of how plasmonic and dielectric materials induce nonlinear optical properties.Plasmonic and dielectric nonlinear meta-devices that can excite strong resonant modes for efficiency enhancement are explored.We outline different strategies designed to shape the radiation pattern in order to increase the collection capability of nonlinear signals emitted from meta-devices.In addition,we discuss how nonlinear phase manipulation in meta-devices can integrate the benefits of efficiency enhancement and radiation shaping,not only boosting the energy density of the nonlinear signal but also facilitating a wide range of applications.Finally,potential research directions within this field are discussed.
基金supported by the Youth Project of the National Natural Science Foundation of China(Grant No.52105594)the Youth Project of the Applied Basic Research Program of Shanxi Province(Grant No.20210302124274)+4 种基金the Key Research and Development Program of Shanxi Province(Grant No.202102030201005)the Natural Youth Science Foundation of Shanxi Province(Grant Nos.202103021223005 and 202203021212015)the Fund for Shanxi 1331 Project,the Science and Technology Innovation Plan for Colleges and Universities in Shanxi Province(Grant No.2022L575)the Science and Technology Innovation Project in Higher Schools in Shanxi(Grant No.J2020383)Teaching Reform and Innovation Project of the Education Department of Shanxi Province(Grant No.J20221195).
文摘Flexible pressure sensors show great promise for applications in such fields as electronic skin,healthcare,and intelligent robotics.Traditional capacitive pressure sensors,however,face the problem of low sensitivity,which limits their wider application.In this paper,a flexible capacitive pressure sensor with microstructured ionization layer is fabricated by a sandwich-type process,with a low-cost and simple process of inverted molding with sandpapers being used to form a thermoplastic polyurethane elastomer ionic film with double-sided microstructure as the dielectric layer of the sensor,with silver nanowires as electrodes.The operating mechanism of this iontronic pressure sensor is analyzed using a graphical method,and the sensor is tested on a pressure platform.The test results show that the sensor has ultrahigh pressure sensitivities of 3.744 and 1.689 kPa^(−1) at low(0-20 kPa)and high(20-800 kPa)pressures,respectively,as well as a rapid response time(100 ms),and it exhibits good stability and repeatability.The sensor can be used for sensitive monitoring of activities such as finger bending,and for facial expression(smile,frown)recognition,as well as speech recognition.
基金financially supported by the National Natural Science Foundation of China (No.51503158)Key R&D Program of Hubei Province (No.2023BAB104)Open Project Program of High-Tech Organic Fibers Key Laboratory of Sichuan Province(No.PLN2024-08)
文摘The phenomena of thermal runaway and accidental deformation due to external stresses in lithium batteries or film capacitors consti-tute their primary failure mechanisms.Therefore,monitoring and early warning of overheating or localized strain are of great value for the safe use of lithium batteries or film capacitors;however,this function usually requires a system of multiple complex sensors.The realization of the above multiple hazards using a single sensor for monitoring and alarm functions has not been reported.Here,we exploit the thermally induced conductivity and modulus change during solid-liquid conversion of low melting point polyalloys to modulate the electronic relaxation polariza-tion and interfacial polarization in the composites for dielectric switching,and the reduction of alloy particle spacing during bending/compres-sive strain can be used to generate switchable tunneling effects for insulator-conductor transition.By synergizing dielectric switching and insula-tor-conductor transition,the final flexible thermoplastic polyurethane elastomer/low-melting-point polyalloy composite film achieves the func-tional integration of multi-level overheating warning and small deformation monitoring.
基金supported by the National Natural Science Foundation of China(Grant Nos.62074080 and U23B2042)in part by the Natural Science Foundation of Jiangsu Province(Grant No.BK20211104)in part by the Jiangsu Provincial Key Research and Development Program(Grant No.BE2022126)。
文摘A 4H-SiC superjunction(SJ)MOSFET(SJMOS)with integrated high-K gate dielectric and split gate(HKSG-SJMOS)is proposed in this paper.The key features of HKSG-SJMOS involve the utilization of high-K(HK)dielectric as the gate dielectric,which surrounds the source-connected split gate(SG)and metal gate.The high-K gate dielectric optimizes the electric field distribution within the drift region,creating a low-resistance conductive channel.This enhancement leads to an increase in the breakdown voltage(BV)and a reduction in the specific on resistance(R_(on,sp)).The introduction of split gate surrounded by high-K dielectric reduces the gate-drain capacitance(C_(gd))and gate-drain charge(Q_(gd)),which improves the switching characteristics.The simulation results indicate that compared to conventional 4H-SiC SJMOS,the HKSG-SJMOS exhibits a 110.5%enhancement in figure of merit(FOM,FOM=BV^(2)/R_(on,sp)),a 93.6%reduction in the high frequency figure of merit(HFFOM)of R_(on,sp)·C_(gd),and reductions in turn-on loss(E_(on))and turn-off loss(E_(off))by 38.3%and 31.6%,respectively.Furthermore,the reverse recovery characteristics of HKSG-SJMOS has also discussed,revealing superior performance compared to conventional 4H-SiC SJMOS.
基金the Deanship of Scientific Research at King Khalid University for funding this work through Large Groups Project under(RGP.2/111/44)。
文摘In this research work,sol-gel technique was employed to prepare the strontium based spinel ferrite nanoparticles(SrFe_(2)O_(4))with different ratios of terbium(Tb).Different characterization techniques were used to investigate the structural,morphological,dielectric and magnetic properties of the prepared samples.X-ray diffraction(XRD)result suggests that face-centered cube spinel nanocrystalline structure is formed.Crystallite size of the SrFe_(2)O_(4)decreases with rising of Tb ratio.The morphology,shape and size of the SrFe_(2)O_(4)were examined by scanning electron microscopy(SEM)analysis and results reveal inhomogeneous distributions of the nanostructures with high agglomeration.The electrical resistivity of the SrFe_(2)O_(4)increases with rising of Tb ratio,which is confirmed from the cyclic voltammetry.It is observed that dielectric constant of all the samples decreases with the increasing frequency range.It is determined that the dielectric constants of the spinel ferrites are frequency dependent and decrease with increasing the frequency of applied electric field.The magnetic behavior of SrFe_(2)O_(4)with different ratios of Tb was studied and it is found that the saturation magnetization values of samples decrease with increase in the substitution of Tb^(3+)at octahedral sites for Fe^(3+).This decrease in the values of M_(s) is also attributed to spin at surface of nanoparticles.
文摘The present work reports the structural,optical,dielectric,and electrical properties of Eu-Er substituted M-type Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19)(x=0.0.05,0.1,0.15,and 0.2)hexaferrites synthesized by sol-gel combustion method.The hexagonal structure of the Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19) samples was confirmed from X-ray diffraction(XRD)analysis.The values of lattice parameters of the Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19)samples are increased as compared to Ba_(0.5)Sr_(0.5)Fe_(12)O_(19) sample.This increase in the value of lattice parameters is attributed to the substitution of larger cations(Eu^(3+)and Er^(3+))in place of smaller cations(Fe^(3+)ions).The crystallite sizes of the Ba0.5Sr0.5EuxErxFe12-2x019 samples also increase due to the substitution of larger cations.The force constants(K_o and K_t)increases with increasing Eu-Er concentration.The octahedral cluster shifts towards the higher wavenumber side whereas the tetrahedral cluster shifts towards the lower wavenumber side due to Eu-Er substitution in the Fourier transform infrared(FTIR)spectra.The photoluminescence(PL)emission spectra for the Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19) samples are observed at 365 nm.The dielectric dispersion in the Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19) samples can be understood by Koop's theory and Maxwell-Wagner type of inte rfacial polarization.Using Jonscher's power law and the co rrelated barrier hopping(CBH)model,the frequency and temperature-dependent be haviour of ac conductivity of Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19) samples are described.The temperature-dependent behaviour of the dc conductivity of the Ba_(0.5)Sr_(0.5)Eu_(x)Er_(x)Fe_(12-2x)O_(19) samples is explained by the variable range hopping(VRH)model.The Motto temperature of the sample varies from 4.55×10^(9) to 2.31×10^(8) K.The estimated maximum barrier height(WM)of the compound varies from 0.6603 to 0.1199 eV.The temperature coefficient and activation energy of the samples were also calculated as a function of Eu-Er concentration.
基金financially supported by the National Natural Science Foundation of China(Nos.52373316,22075298,and52373020)the Beijing Municipal Natural Science Foundation(No.2212053)。
文摘Low dielectric constant(low-k)materials are critical for advanced packaging in high-density microelectronic devices and high-frequency communication technologies.Ladder polysiloxanes,which are characterized by their unique double-chain structure and intrinsic microporosity,offer remarkable advantages in terms of thermal stability,oxidation resistance,and dielectric performance.However,structural defects in ladder polysiloxanes,such as cage-like and irregular oligomers,and their effects on dielectric properties remain underexplored.In this study,a series of ladder-like polysiloxanes(X-TMS)with diverse side groups weresynthesized via a one-step base-catalyzed method.The influence of the benzocyclobutene(BCB)side groups on the formation of regular ladder structures was systematically investigated.Notably,BCB incorporation disrupted the structural regularity,favoring the formation of cage-like and irregular topologies,which were extensively characterized using 29silicon nuclear magnetic resonance spectroscopy(^(29)Si-NMR),Fourier transform infrared spectroscopy(FTIR),gel permeation chromatography(GPC),and X-ray diffraction(XRD).These structural defects were beneficial for improving the hydrophobicity and thermal stability.Copolymerization of X-TMS with commercial DVS-BCB resins further enhanced the mechanical properties,with the elastic modulus increasing from 3.6 GPa to 4.4 GPa and water absorption reduced from 0.33 wt%to 0.06 wt%.This study establishes a clear correlation between topological structures and material properties.These findings not only advance the understanding of the structure-property relationships in ladder polysiloxanes but also provide a novel approach for designing high-performance interlayer dielectric materials for next-generation microelectronics.
基金financially supported by the Natural Science Foundation of Shandong Province(No.ZR2021ME011)State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(No.LAPS20001)。
文摘In high-frequency electrical energy systems,polyimide(PI)composite insulation materials need to possess a low dielectric constant,sufficient thermal conductivity,and robust interfacial adhesion to ensure reliable performance under elevated temperatures and pressures.These aspects are crucial for preventing local overheating and electrical breakdown,thereby ensuring reliable equipment operation.Traditional PI insulation materials often exhibit high dielectric constants and pronounced dielectric losses,compromising their insulation efficiency.In this study,molecular dynamics simulations were employed to incorporate polyhedral oligomeric silsesquioxanes(POSS)into PI through physical blending and chemical bonding to enhance dielectric properties.Key parameters of the PI/POSS composite system,including dielectric constant,thermal conductivity,glass transition temperature,Young’s modulus,Poisson’s ratio,and interfacial adhesion energy,were systematically evaluated for both doping methods.The degradation behavior of the PI composites under high-temperature and electric field conditions was also simulated to elucidate degradation pathways and product distributions,providing insights for designing low-dielectric insulation materials.Doping with POSS significantly reduces the dielectric constant of PI,thereby improving insulation performance,thermal stability,mechanical strength,and interfacial adhesion.At an optimal POSS doping ratio,the thermal conductivity of PI is enhanced.Compared with the physical blending system,the chemical bonding system yields more substantial improvements across all evaluated properties.Under high-temperature and strong electric field conditions,POSS doping enhances interfacial adhesion and thermal stability,effectively suppressing the cleavage of key chemical bonds,reducingCOemissions,and increasing the formation of oxygen-containing intermediates and water molecules,which contributes to improved environmental sustainability.
基金financially supported by the Postdoctoral Fellowship Program of CPSF(Grant No.GZC20240372)China Postdoctoral Science Foundation(Grant No.2024M750728)+4 种基金Jiangsu Funding Program for Excellent Postdoctoral Talent(Grant No.2024ZB514)National Natural Science Foundation of China(Nos.21975185 and 51978239)Natural Science Foundation of Jiangsu Province(No.BK20220989)National Key R&D Program of China(Nos.2022YFC3203702 and 2023YFC3208900)the Australian Research Council(Nos.LP220100278,DP240102628 and DP240102728).
文摘To adapt to the trend of increasing miniaturization and high integration of microelectronic equipments,there is a high demand for multifunctional thermally conductive(TC)polymeric films combining excellent flame retardancy and low dielectric constant(ε).To date,there have been few successes that achieve such a performance portfolio in polymer films due to their different and even mutually exclusive governing mechanisms.Herein,we propose a trinity strategy for creating a rationally engineered heterostructure nanoadditive(FG@CuP@ZTC)by in situ self-assembly immobilization of copper-phenyl phosphonate(CuP)and zinc-3,5-diamino-1,2,4-triazole complex(ZTC)onto the fluorinated graphene(FG)surface.Benefiting from the synergistic effects of FG,CuP,and ZTC and the bionic lay-by-lay(LBL)strategy,the as-fabricated waterborne polyurethane(WPU)nanocomposite film with 30 wt%FG@CuP@ZTC exhibits a 55.6%improvement in limiting oxygen index(LOI),66.0%and 40.5%reductions in peak heat release rate and total heat release,respectively,and 93.3%increase in tensile strength relative to pure WPU film due to the synergistic effects between FG,CuP,and ZTC.Moreover,the WPU nanocomposite film presents a high thermal conductivity(λ)of 12.7 W m^(−1) K^(−1) and a lowεof 2.92 at 106 Hz.This work provides a commercially viable rational design strategy to develop high-performance multifunctional polymer nanocomposite films,which hold great potential as advanced polymeric thermal dissipators for high-power-density microelectronics.
基金financially supported by the Natural Science Foundation of Shandong Province(Nos.ZR2021ME055,ZR2022QB170 and ZR2022MB034)the Foundation(No.GZKF202128)of State Key Laboratory of Biobased Material and Green Papermaking,Qilu University of Technology,Shandong Academy of Sciencesthe Development Program Project of Young Innovation Team of Institutions of Higher Learning in Shandong Province.
文摘It is urgent to develop high-performance polyimide(PI)films that simultaneously exhibit high transparency,exceptional thermal stability,mechanical robustness,and low dielectric to fulfil the requirements of flexible display technologies.Herein,a series of fluorinated polyimide films(FPIs)were fabricated by the condensation of 5,5′-(perfluoropropane-2,2-diyl)bis(isobenzofuran-1,3-dione)(6FDA)and the fluorinated triphenylmethane diamine monomer(EDA,MEDA and DMEDA)with heat-crosslinkable tetrafluorostyrene side groups,which was incorporated by different numbers of methyl groups pendant in the ortho position of amino groups.Subsequently,the FPI films underwent heating to produce crosslinking FPIs(C-FPIs)through the self-crosslinking of double bonds in the tetrafluorostyrene.The transparency,solvent resistance,thermal stability,mechanical robustness and dielectric properties of FPI and C-FPI films can be tuned by the number of methyl groups and crosslinking,which were deeply investigated by virtue of molecular dynamics(MD)simulations and density functional theory(DFT).As a result,all the films exhibited exceptional optically colorless and transparent,with transmittance in the visible region of 450-700 nm exceeding 79.9%,and the cut-off wavelengths(λ_(off))were nearly 350 nm.The thermal decomposition temperatures at 5% weight loss(T_(d5%))for all samples exceeded 504℃.These films exhibited a wide range of tunable tensile strength(46.5-75.1 MPa).Significantly,they showed exceptional dielectric properties with the dielectric constant of 2.3-2.5 at full frequency(10^(7)-20 Hz).This study not only highlights the relationship between the polymer molecular structure and properties,but offer insights for balancing optical transparency,heat resistance and low dielectric constant in PI films.
