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Mixed-Mode Device Modeling of DGMOS RF Oscillators
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作者 Mourad Bella Saida Latreche +1 位作者 Samir Labiod Christian Gontrand 《Circuits and Systems》 2014年第1期18-26,共9页
A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest... A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest of the considered circuit is governed by Kirchhoff’s laws. The Linear Time Variant (LTV) model of phase noise is based on the Impulse Sensitivity Function of the Colpitts Oscillator which describes carefully the sensitivity of an oscillator to any impulse current injection in any node of the circuit. Finally, we improve the phase noise modeling, confronting some analytical developments to mixed-mode simulations. 展开更多
关键词 dgmos TRANSISTOR COLPITTS OSCILLATOR RADIOFREQUENCY Mixed Mode Simulation ISF Function Noise
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