Integer factorization,the core of the Rivest−Shamir−Adleman(RSA)attack,is an exciting but formidable challenge.As of this year,a group of researchers’latest quantum supremacy chip remains unavailable for cryptanalysi...Integer factorization,the core of the Rivest−Shamir−Adleman(RSA)attack,is an exciting but formidable challenge.As of this year,a group of researchers’latest quantum supremacy chip remains unavailable for cryptanalysis.Quantum annealing(QA)has a unique quantum tunneling advantage,which can escape local extremum in the exponential solution space,finding the global optimal solution with a higher probability.Consequently,we consider it an effective method for attacking cryptography.According to Origin Quantum Computing,QA computers are able to factor numbers several orders of magnitude larger than universal quantum computers.We try to transform the integer factorization problem in RSA attacks into a combinatorial optimization problem by using the QA algorithm of D-Wave quantum computer,and attack RSA-2048 which is composed of a class of special integers.The experiment factored this class of integers of size 22048,N=p×q.As an example,the article gives the results of 10 RSA-2048 attacks in the appendix.This marks the first successful factorization of RSA-2048 by D-Wave quantum computer,regardless of employing mathematical or quantum techniques,despite dealing with special integers,exceeding 21061−1 of California State University.This experiment verifies that the QA algorithm based on D-Wave is an effective method to attack RSA.展开更多
In the process of power scaling large-area Quantum Cascade Lasers(QCLs),challenges such as degradation of beam quality and emission of multilobed far-field modes are frequently encountered.These issues become particul...In the process of power scaling large-area Quantum Cascade Lasers(QCLs),challenges such as degradation of beam quality and emission of multilobed far-field modes are frequently encountered.These issues become particularly pronounced with an increase in ridge width,resulting in multimode problems.To tackle this,an innovative multi ridge waveguide structure based on the principle of supersymmetry(SUSY)was proposed.This structure comprises a wider main waveguide in the center and two narrower auxiliary waveguides on either side.The high-order modes of the main waveguide are coupled with the modes of the auxiliary waveguides through mode-matching design,and the optical loss of the auxiliary waveguides suppresses these modes,thereby achieving fundamental mode lasing of the wider main waveguide.This paper employs the finite difference eigenmode(FDE)method to perform detailed structural modeling and simulation optimization of the 4.6μm wavelength quantum cascade laser,successfully achieving a single transverse mode QCL with a ridge width of 10μm.In comparison to the traditional single-mode QCL(with a ridge width of about 5μm),the MRW structure has the potential to increase the gain area of the laser by 100%.This offers a novel design concept and methodology for enhancing the single-mode luminous power of mid-infrared quantum cascade lasers,which is of considerable significance.展开更多
Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and v...Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and viable quantum algorithms for simulating large-scale materials are still limited.We propose and implement random-state quantum algorithms to calculate electronic-structure properties of real materials.Using a random state circuit on a small number of qubits,we employ real-time evolution with first-order Trotter decomposition and Hadamard test to obtain electronic density of states,and we develop a modified quantum phase estimation algorithm to calculate real-space local density of states via direct quantum measurements.Furthermore,we validate these algorithms by numerically computing the density of states and spatial distributions of electronic states in graphene,twisted bilayer graphene quasicrystals,and fractal lattices,covering system sizes from hundreds to thousands of atoms.Our results manifest that the random-state quantum algorithms provide a general and qubit-efficient route to scalable simulations of electronic properties in large-scale periodic and aperiodic materials.展开更多
The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon ...The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon sources in the near-infrared band(λ∼700–1000 nm),several challenges have yet to be addressed for ideal single-photon emission at the telecommunication band.In this study,we present a droplet-epitaxy strategy for O-band to C-band single-photon source-based semiconductor quantum dots(QDs)using metal-organic vaporphase epitaxy(MOVPE).By investigating the growth conditions of the epitaxial process,we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ∼1200–1600 nm.The morphological and optical properties of the samples were characterized using atomic force microscopy and microphotoluminescence spectroscopy.The recorded single-photon purity of a plain QD structure reaches g^((2))(0)=0.16,with a radiative recombination lifetime as short as 1.5 ns.This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands,offering significant prospects for quantum network applications.展开更多
The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges be...The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges between 0.2 and 0.4.This enhancement prompts a critical question:to what extent can quantum wells(QWs)be strained while still preserving the fundamental QSHI phase?In this study,we demonstrate the controlled molecular beam epitaxial growth of highly strained-layer QWs with an indium composition of x=0.5.These structures possess a substantial compressive strain within the In_(0.5)Ga_(0.5)Sb QW.Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films,indicating coherent lattice structures and the absence of visible dislocations.Transport measurements further reveal that the QSHI phase in InAs/In_(0.5)Ga_(0.5)Sb QWs is robust and protected by time-reversal symmetry.Notably,the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field.This behavior is in agreement with the𝑍2 topological property predicted by the Bernevig–Hughes–Zhang model,confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.展开更多
InP quantum dots(QDs)have been a major building block of modern display technology due to their high photoluminescence quantum yield(PLQY)in the visible spectrum,superior stability,and eco-friendly composition.However...InP quantum dots(QDs)have been a major building block of modern display technology due to their high photoluminescence quantum yield(PLQY)in the visible spectrum,superior stability,and eco-friendly composition.However,their applications at short-wave infrared(SWIR)have been hindered by their low efficiency.Here,we report the synthesis of efficient and SWIR-emitting InP QDs by precisely controlling the InP core nucleation using a low-cost ammonia phosphorus precursor,while avoiding size-limiting ZnCl_(2) for effective copper doping.Subsequent epitaxial growth of a lattice-matched ZnSe/ZnS multishell enhanced the QD sphericity and surface smoothness and yielded a record PLQY of 66% with an emission peak at 960 nm.When QDs were integrated as the high-refractive-index luminescent core of a liquid waveguide-based luminescent solar concentrator(LSC),the device achieved an optical efficiency of 7.36%.This performance arises from their high PLQY,spectral alignment with the responsivity peak of silicon solar cells,and the optimized core/cladding waveguide structure.These results highlight the potential of InP QDs as a promising nanomaterial for SWIR emission and applications.展开更多
To fully utilize the resources provided by optical fiber networks,a cross-band quantum light source generating photon pairs,where one photon in a pair is at C band and the other is at O band,is proposed in this work.T...To fully utilize the resources provided by optical fiber networks,a cross-band quantum light source generating photon pairs,where one photon in a pair is at C band and the other is at O band,is proposed in this work.This source is based on spontaneous four-wave mixing(SFWM)in a piece of shallow-ridge silicon waveguide.Theoretical analysis shows that the waveguide dispersion could be tailored by adjusting the ridge width,enabling broadband photon pair generation by SFWM across C band and O band.The spontaneous Raman scattering(SpRS)in silicon waveguides is also investigated experimentally.It shows that there are two regions in the spectrum of generated photons from SpRS,which could be used to achieve cross-band photon pair generation.A chip of shallow-ridge silicon waveguide samples with different ridge widths has been fabricated,through which cross-band photon pair generation is demonstrated experimentally.The experimental results show that the source can be achieved using dispersion-optimized shallow-ridge silicon waveguides.This cross-band quantum light source provides a way to develop new fiber-based quantum communication functions utilizing both C band and O band and extends applications of quantum networks.展开更多
We have studied the quasiparticle transport in quantum-wire /ferromagnetic-insulator/d wave super- conductor Junction （q/FI/d） in the framework of the Blonder-Tinkham-Klapwijk model. We calculate the tunneling condu...We have studied the quasiparticle transport in quantum-wire /ferromagnetic-insulator/d wave super- conductor Junction （q/FI/d） in the framework of the Blonder-Tinkham-Klapwijk model. We calculate the tunneling conductance in q/FI/d as a function of the bias voltage at zero temperature and finite temperature based on Bogoliubov- de Gennes equations. Different from the case in normal-metal/insulator/d wave superconductor Junctions, the zero-bias conductance peaks vanish for the single-mode case. The tunneling conductance spectra depend on the magnitude of the exchange interaction at the ferromagnetic-insulator.展开更多
Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yiel...Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.展开更多
Implementing quantum wireless multi-hop network communication is essential to improve the global quantum network system. In this paper, we employ eight-level GHZ states as quantum channels to realize multi-hop quantum...Implementing quantum wireless multi-hop network communication is essential to improve the global quantum network system. In this paper, we employ eight-level GHZ states as quantum channels to realize multi-hop quantum communication, and utilize the logical relationship between the measurements of each node to derive the unitary operation performed by the end node. The hierarchical simultaneous entanglement switching(HSES) method is adopted, resulting in a significant reduction in the consumption of classical information compared to multi-hop quantum teleportation(QT)based on general simultaneous entanglement switching(SES). In addition, the proposed protocol is simulated on the IBM Quantum Experiment platform(IBM QE). Then, the data obtained from the experiment are analyzed using quantum state tomography, which verifies the protocol's good fidelity and accuracy. Finally, by calculating fidelity, we analyze the impact of four different types of noise(phase-damping, amplitude-damping, phase-flip and bit-flip) in this protocol.展开更多
The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investiga...The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.展开更多
The preparation of red,green,and blue quantum dot(QD)pixelated arrays with high precision,resolution,and brightness poses a significant challenge on the development of advanced micro-displays for virtual,augmented,and...The preparation of red,green,and blue quantum dot(QD)pixelated arrays with high precision,resolution,and brightness poses a significant challenge on the development of advanced micro-displays for virtual,augmented,and mixed reality applications.Alongside the controlled synthesis of high-performance QDs,a reliable QD patterning technology is crucial in overcoming this challenge.Among the various methods available,photolithography-based patterning technologies show great potentials in producing ultra-fine QD patterns at micron scale.This review article presents the recent advancements in the field of QD patterning using photolithography techniques and explores their applications in micro-display technology.Firstly,we discuss QD patterning through photolithography techniques employing photoresist(PR),which falls into two categories:PRassisted photolithography and photolithography of QDPR.Subsequently,direct photolithography techniques based on photo-induced crosslinking of photosensitive groups and photo-induced ligand cleavage mechanisms are thoroughly reviewed.Meanwhile,we assess the performance of QD arrays fabricated using these photolithography techniques and their integration into QD light emitting diode display devices as well as color conversionbased micro light emitting diode display devices.Lastly,we summarize the most recent developments in this field and outline future prospects.展开更多
Broad area quantum cascade lasers(BA QCLs)have significant applications in many areas,but suffer from demanding pulse operating conditions and poor beam quality due to heat accumulation and generation of high order mo...Broad area quantum cascade lasers(BA QCLs)have significant applications in many areas,but suffer from demanding pulse operating conditions and poor beam quality due to heat accumulation and generation of high order modes.A structure of mini-array is adopted to improve the heat dissipation capacity and beam quality of BA QCLs.The active region is etched to form a multi-emitter and the channels are filled with In P:Fe,which acts as a lateral heat dissipation channel to improve the lateral heat dissipation efficiency.A device withλ~4.8μm,a peak output power of 122 W at 1.2%duty cycle with a pulse of 1.5μs is obtained in room temperature,with far-field single-lobed distribution.This result allows BA QCLs to obtain high peak power at wider pump pulse widths and higher duty cycle conditions,promotes the application of the mid-infrared laser operating in pulsed mode in th e field of standoff photoacoustic chemical detection,space optical communication,and so on.展开更多
Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectr...Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectronics.However,QDs are typically degraded under humid and high-temperature circumstances,greatly limiting their practical value.Coating the QD surface with an inorganic silica layer is a feasible method for improving stability and endurance in a variety of applications.This paper comprehensively reviews silica coating methodologies on QD surfaces and explores their applications in optoelectronic domains.Firstly,the paper provides mainstream silica coating approaches,which can be divided into two categories:in-situ hydrolysis of silylating reagents on QD surfaces and template techniques for encapsulation QDs.Subsequently,the recent applications of the silica-coated QDs on optoelectronic fields including light-emitting diodes,solar cells,photodetectors were discussed.Finally,it reviews recent advances in silica-coated QD technology and prospects for future applications.展开更多
Aqueous zinc ion batteries have received widespread attention.However,the growth of zinc dendrites and hydrogen evolution reaction generation seriously hinder the practical application of zinc ion bat-teries.Herein,it...Aqueous zinc ion batteries have received widespread attention.However,the growth of zinc dendrites and hydrogen evolution reaction generation seriously hinder the practical application of zinc ion bat-teries.Herein,it is reported that a multifunctional dendrites-free low-temperature PVA-based gel elec-trolyte by introducing negatively charged polymer carbon quantum dots(QDs)and the organic antifreeze dimethyl sulfoxide(DMSO)into it.The QDs carrying a large number of functional groups on the surface can effectively adsorb Zn^(2+),eliminating the“tip effect”,and inducing the uniform deposition of Zn^(2+)and the formation of a dendrites-free structure.Meanwhile,the solvation structure of adsorbed Zn^(2+)can be controlled by charged groups to reduce the generation of side reactions,thus obtaining high-performance zinc ion batteries.The Zn/polyaniline(PANi)full battery can be stably cycled more than 1000 times at-20℃,and the design of this gel electrolyte can provide good feasibility for safe,stable,and flexible energy storage devices.展开更多
文摘Integer factorization,the core of the Rivest−Shamir−Adleman(RSA)attack,is an exciting but formidable challenge.As of this year,a group of researchers’latest quantum supremacy chip remains unavailable for cryptanalysis.Quantum annealing(QA)has a unique quantum tunneling advantage,which can escape local extremum in the exponential solution space,finding the global optimal solution with a higher probability.Consequently,we consider it an effective method for attacking cryptography.According to Origin Quantum Computing,QA computers are able to factor numbers several orders of magnitude larger than universal quantum computers.We try to transform the integer factorization problem in RSA attacks into a combinatorial optimization problem by using the QA algorithm of D-Wave quantum computer,and attack RSA-2048 which is composed of a class of special integers.The experiment factored this class of integers of size 22048,N=p×q.As an example,the article gives the results of 10 RSA-2048 attacks in the appendix.This marks the first successful factorization of RSA-2048 by D-Wave quantum computer,regardless of employing mathematical or quantum techniques,despite dealing with special integers,exceeding 21061−1 of California State University.This experiment verifies that the QA algorithm based on D-Wave is an effective method to attack RSA.
基金Supported by the National Natural Science Foundation of China(62105039)。
文摘In the process of power scaling large-area Quantum Cascade Lasers(QCLs),challenges such as degradation of beam quality and emission of multilobed far-field modes are frequently encountered.These issues become particularly pronounced with an increase in ridge width,resulting in multimode problems.To tackle this,an innovative multi ridge waveguide structure based on the principle of supersymmetry(SUSY)was proposed.This structure comprises a wider main waveguide in the center and two narrower auxiliary waveguides on either side.The high-order modes of the main waveguide are coupled with the modes of the auxiliary waveguides through mode-matching design,and the optical loss of the auxiliary waveguides suppresses these modes,thereby achieving fundamental mode lasing of the wider main waveguide.This paper employs the finite difference eigenmode(FDE)method to perform detailed structural modeling and simulation optimization of the 4.6μm wavelength quantum cascade laser,successfully achieving a single transverse mode QCL with a ridge width of 10μm.In comparison to the traditional single-mode QCL(with a ridge width of about 5μm),the MRW structure has the potential to increase the gain area of the laser by 100%.This offers a novel design concept and methodology for enhancing the single-mode luminous power of mid-infrared quantum cascade lasers,which is of considerable significance.
基金supported by the Major Project for the Integration of ScienceEducation and Industry (Grant No.2025ZDZX02)。
文摘Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and viable quantum algorithms for simulating large-scale materials are still limited.We propose and implement random-state quantum algorithms to calculate electronic-structure properties of real materials.Using a random state circuit on a small number of qubits,we employ real-time evolution with first-order Trotter decomposition and Hadamard test to obtain electronic density of states,and we develop a modified quantum phase estimation algorithm to calculate real-space local density of states via direct quantum measurements.Furthermore,we validate these algorithms by numerically computing the density of states and spatial distributions of electronic states in graphene,twisted bilayer graphene quasicrystals,and fractal lattices,covering system sizes from hundreds to thousands of atoms.Our results manifest that the random-state quantum algorithms provide a general and qubit-efficient route to scalable simulations of electronic properties in large-scale periodic and aperiodic materials.
基金supported by the National Natural Science Foundation of China (Grant Nos.12494604,12393834,12393831,62274014,6223501662335015)the National Key R&D Program of China (Grant No.2024YFA1208900)。
文摘The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon sources in the near-infrared band(λ∼700–1000 nm),several challenges have yet to be addressed for ideal single-photon emission at the telecommunication band.In this study,we present a droplet-epitaxy strategy for O-band to C-band single-photon source-based semiconductor quantum dots(QDs)using metal-organic vaporphase epitaxy(MOVPE).By investigating the growth conditions of the epitaxial process,we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ∼1200–1600 nm.The morphological and optical properties of the samples were characterized using atomic force microscopy and microphotoluminescence spectroscopy.The recorded single-photon purity of a plain QD structure reaches g^((2))(0)=0.16,with a radiative recombination lifetime as short as 1.5 ns.This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands,offering significant prospects for quantum network applications.
基金supported by the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos.XDB28000000 and XDB0460000)the Quantum Science and Technology-National Science and Technology Major Project (Grant No.2021ZD0302600)the National Key Research and Development Program of China(Grant No.2024YFA1409002)。
文摘The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges between 0.2 and 0.4.This enhancement prompts a critical question:to what extent can quantum wells(QWs)be strained while still preserving the fundamental QSHI phase?In this study,we demonstrate the controlled molecular beam epitaxial growth of highly strained-layer QWs with an indium composition of x=0.5.These structures possess a substantial compressive strain within the In_(0.5)Ga_(0.5)Sb QW.Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films,indicating coherent lattice structures and the absence of visible dislocations.Transport measurements further reveal that the QSHI phase in InAs/In_(0.5)Ga_(0.5)Sb QWs is robust and protected by time-reversal symmetry.Notably,the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field.This behavior is in agreement with the𝑍2 topological property predicted by the Bernevig–Hughes–Zhang model,confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.
文摘InP quantum dots(QDs)have been a major building block of modern display technology due to their high photoluminescence quantum yield(PLQY)in the visible spectrum,superior stability,and eco-friendly composition.However,their applications at short-wave infrared(SWIR)have been hindered by their low efficiency.Here,we report the synthesis of efficient and SWIR-emitting InP QDs by precisely controlling the InP core nucleation using a low-cost ammonia phosphorus precursor,while avoiding size-limiting ZnCl_(2) for effective copper doping.Subsequent epitaxial growth of a lattice-matched ZnSe/ZnS multishell enhanced the QD sphericity and surface smoothness and yielded a record PLQY of 66% with an emission peak at 960 nm.When QDs were integrated as the high-refractive-index luminescent core of a liquid waveguide-based luminescent solar concentrator(LSC),the device achieved an optical efficiency of 7.36%.This performance arises from their high PLQY,spectral alignment with the responsivity peak of silicon solar cells,and the optimized core/cladding waveguide structure.These results highlight the potential of InP QDs as a promising nanomaterial for SWIR emission and applications.
基金supported by the Quantum Science and Technology-National Science and Technology Major Project (Grant No.2024ZD0302502 for WZ)the National Natural Science Foundation of China(Grant No.92365210 for WZ)+1 种基金Tsinghua Initiative Scientific Research Program (for WZ)the project of Tsinghua University-Zhuhai Huafa Industrial Share Company Joint Institute for Architecture Optoelectronic Technologies (JIAOT,for YH)。
文摘To fully utilize the resources provided by optical fiber networks,a cross-band quantum light source generating photon pairs,where one photon in a pair is at C band and the other is at O band,is proposed in this work.This source is based on spontaneous four-wave mixing(SFWM)in a piece of shallow-ridge silicon waveguide.Theoretical analysis shows that the waveguide dispersion could be tailored by adjusting the ridge width,enabling broadband photon pair generation by SFWM across C band and O band.The spontaneous Raman scattering(SpRS)in silicon waveguides is also investigated experimentally.It shows that there are two regions in the spectrum of generated photons from SpRS,which could be used to achieve cross-band photon pair generation.A chip of shallow-ridge silicon waveguide samples with different ridge widths has been fabricated,through which cross-band photon pair generation is demonstrated experimentally.The experimental results show that the source can be achieved using dispersion-optimized shallow-ridge silicon waveguides.This cross-band quantum light source provides a way to develop new fiber-based quantum communication functions utilizing both C band and O band and extends applications of quantum networks.
基金The project supported by the Natural Science Foundation of the Education Committee of Jiangsu Province of China under Grant No.06KJB140009
文摘We have studied the quasiparticle transport in quantum-wire /ferromagnetic-insulator/d wave super- conductor Junction （q/FI/d） in the framework of the Blonder-Tinkham-Klapwijk model. We calculate the tunneling conductance in q/FI/d as a function of the bias voltage at zero temperature and finite temperature based on Bogoliubov- de Gennes equations. Different from the case in normal-metal/insulator/d wave superconductor Junctions, the zero-bias conductance peaks vanish for the single-mode case. The tunneling conductance spectra depend on the magnitude of the exchange interaction at the ferromagnetic-insulator.
文摘Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.
基金Project supported by the Open Fund of Anhui Key Laboratory of Mine Intelligent Equipment and Technology (Grant No. ZKSYS202204)the Talent Introduction Fund of Anhui University of Science and Technology (Grant No. 2021yjrc34)the Scientific Research Fund of Anhui Provincial Education Department (Grant No. KJ2020A0301)。
文摘Implementing quantum wireless multi-hop network communication is essential to improve the global quantum network system. In this paper, we employ eight-level GHZ states as quantum channels to realize multi-hop quantum communication, and utilize the logical relationship between the measurements of each node to derive the unitary operation performed by the end node. The hierarchical simultaneous entanglement switching(HSES) method is adopted, resulting in a significant reduction in the consumption of classical information compared to multi-hop quantum teleportation(QT)based on general simultaneous entanglement switching(SES). In addition, the proposed protocol is simulated on the IBM Quantum Experiment platform(IBM QE). Then, the data obtained from the experiment are analyzed using quantum state tomography, which verifies the protocol's good fidelity and accuracy. Finally, by calculating fidelity, we analyze the impact of four different types of noise(phase-damping, amplitude-damping, phase-flip and bit-flip) in this protocol.
基金support from the National Key Research and Development Program of China(2024YFA1207700)National Natural Science Foundation of China(52072141,52102170).
文摘The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.
基金supported by the National Natural Science Foundation of China(62374142,12175189 and 11904302)External Cooperation Program of Fujian(2022I0004)+1 种基金Fundamental Research Funds for the Central Universities(20720190005 and 20720220085)Major Science and Technology Project of Xiamen in China(3502Z20191015).
文摘The preparation of red,green,and blue quantum dot(QD)pixelated arrays with high precision,resolution,and brightness poses a significant challenge on the development of advanced micro-displays for virtual,augmented,and mixed reality applications.Alongside the controlled synthesis of high-performance QDs,a reliable QD patterning technology is crucial in overcoming this challenge.Among the various methods available,photolithography-based patterning technologies show great potentials in producing ultra-fine QD patterns at micron scale.This review article presents the recent advancements in the field of QD patterning using photolithography techniques and explores their applications in micro-display technology.Firstly,we discuss QD patterning through photolithography techniques employing photoresist(PR),which falls into two categories:PRassisted photolithography and photolithography of QDPR.Subsequently,direct photolithography techniques based on photo-induced crosslinking of photosensitive groups and photo-induced ligand cleavage mechanisms are thoroughly reviewed.Meanwhile,we assess the performance of QD arrays fabricated using these photolithography techniques and their integration into QD light emitting diode display devices as well as color conversionbased micro light emitting diode display devices.Lastly,we summarize the most recent developments in this field and outline future prospects.
文摘Broad area quantum cascade lasers(BA QCLs)have significant applications in many areas,but suffer from demanding pulse operating conditions and poor beam quality due to heat accumulation and generation of high order modes.A structure of mini-array is adopted to improve the heat dissipation capacity and beam quality of BA QCLs.The active region is etched to form a multi-emitter and the channels are filled with In P:Fe,which acts as a lateral heat dissipation channel to improve the lateral heat dissipation efficiency.A device withλ~4.8μm,a peak output power of 122 W at 1.2%duty cycle with a pulse of 1.5μs is obtained in room temperature,with far-field single-lobed distribution.This result allows BA QCLs to obtain high peak power at wider pump pulse widths and higher duty cycle conditions,promotes the application of the mid-infrared laser operating in pulsed mode in th e field of standoff photoacoustic chemical detection,space optical communication,and so on.
基金supported by the National Natural Science Foundation of China(Nos.62374142 and 22005255)Fundamental Research Funds for the Central Universities(Nos.20720220085 and 20720240064)+2 种基金External Cooperation Program of Fujian(No.2022I0004)Major Science and Technology Project of Xiamen in China(No.3502Z20191015)Xiamen Natural Science Foundation Youth Project(No.3502Z202471002)。
文摘Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectronics.However,QDs are typically degraded under humid and high-temperature circumstances,greatly limiting their practical value.Coating the QD surface with an inorganic silica layer is a feasible method for improving stability and endurance in a variety of applications.This paper comprehensively reviews silica coating methodologies on QD surfaces and explores their applications in optoelectronic domains.Firstly,the paper provides mainstream silica coating approaches,which can be divided into two categories:in-situ hydrolysis of silylating reagents on QD surfaces and template techniques for encapsulation QDs.Subsequently,the recent applications of the silica-coated QDs on optoelectronic fields including light-emitting diodes,solar cells,photodetectors were discussed.Finally,it reviews recent advances in silica-coated QD technology and prospects for future applications.
基金supported by the National Natural Science Foundation of China Project(No.52163001)the Guizhou Minzu University Research Platform Grant(No.GZMUGCZX[2021]01)+2 种基金the Guizhou Provincial Science and Technology Program Project Grant(Qiankehe Platform Talents-CXTD[2021]005,Qiankehe Platform Talents-GCC[2022]010-1,Qiankehe Fuqi[2023]001)the Central Guided Local Science and Technology Development Funds Project(Qiankehe Zhong Yindi[2023]035)the Doctor Startup Fund of Guizhou Minzu University(Grant No.GZMUZK[2024]QD77).
文摘Aqueous zinc ion batteries have received widespread attention.However,the growth of zinc dendrites and hydrogen evolution reaction generation seriously hinder the practical application of zinc ion bat-teries.Herein,it is reported that a multifunctional dendrites-free low-temperature PVA-based gel elec-trolyte by introducing negatively charged polymer carbon quantum dots(QDs)and the organic antifreeze dimethyl sulfoxide(DMSO)into it.The QDs carrying a large number of functional groups on the surface can effectively adsorb Zn^(2+),eliminating the“tip effect”,and inducing the uniform deposition of Zn^(2+)and the formation of a dendrites-free structure.Meanwhile,the solvation structure of adsorbed Zn^(2+)can be controlled by charged groups to reduce the generation of side reactions,thus obtaining high-performance zinc ion batteries.The Zn/polyaniline(PANi)full battery can be stably cycled more than 1000 times at-20℃,and the design of this gel electrolyte can provide good feasibility for safe,stable,and flexible energy storage devices.
