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Suppression of current-induced membrane discharge of bipolar membranes by regulating ion crossover transport
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作者 Tingting Yu Haolan Tao +2 位作者 Jingkun Li Cheng Lian Honglai Liu 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2024年第9期387-395,共9页
Bipolar membranes(BPMs)exhibit the unique capability to regulate the operating environment of electrochemical system through the water dissociation-combination processes.However,the industrial utilization of BPMs is l... Bipolar membranes(BPMs)exhibit the unique capability to regulate the operating environment of electrochemical system through the water dissociation-combination processes.However,the industrial utilization of BPMs is limited by instability and serious energy consumption.The current-induced membrane discharge(CIMD)at high-current conditions has a negative influence on the performance of anion-exchange membranes,but the underlying ion transport mechanisms in the BPMs remain unclear.Here,the CIMD-coupled Poisson-Nernst-Planck(PNP)equations are used to explore the ion transport mechanisms in the BPMs for both reverse bias and forward bias at neutral and acid-base conditions.It is demonstrated that the CIMD effect in the reverse-bias mode can be suppressed by enhancing the diffusive transport of salt counter-ions(Na^(+)and Cl^(−))into the BPMs,and that in the forward-bias mode with acid-base electrolytes can be suppressed by matching the transport rate of water counter-ions(H_(3)O^(+)and OH^(−)).Suppressing the CIMD can promote the water dissociation in the reverse-bias mode,as well as overcome the plateau of limiting current density and reduce the interfacial blockage of salt co-ions(Cl^(−))in the anion-exchange layer in the forward-bias mode with acid-base electrolytes.Our work highlights the importance of regulating ion crossover transport on improving the performance of BPMs. 展开更多
关键词 Bipolar membranes current-induced membrane discharge Salt ion crossover Diffusion-migration-reaction process
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Experiments on Interaction Between Current-Induced Vibration and Scour of Submarine Pipelines on Sandy Bottom 被引量:5
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作者 申仲翰 刘玉标 +2 位作者 李青平 黄清华 祝发荣 《China Ocean Engineering》 SCIE EI 2000年第4期423-434,共12页
In order to understand the dynamic behavior of submarine pipelines exposed to current and the mechanism of the interaction between current-induced vibration and scour of pipelines on a sandy bottom, an experimental in... In order to understand the dynamic behavior of submarine pipelines exposed to current and the mechanism of the interaction between current-induced vibration and scour of pipelines on a sandy bottom, an experimental investigation is conducted with a small scale model A test model which can be tested in the flume is set up by taking into account the typical working conditions of the pipelines and by applying the similarity theory. The interactions between the shape of the scour hole and the behavior of the pipeline as well as the flow patterns of the current are detailed, and the interaction mechanism outlined. The effect of vibration of the pipeline on the development of dynamic scour at different stages is found out. The proposed experimental method and test results provide an effective means for design of marine pipelines against scouring. 展开更多
关键词 dynamic scour current-induced vibration marine pipeline shedding of vortex lock-in vibration
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Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling
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作者 刘乃清 黄立捷 +1 位作者 王瑞强 胡梁宾 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第2期399-405,共7页
We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some paramete... We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase(or decrease) with the decrease(or increase) of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection. 展开更多
关键词 semiconductor/superconductor junctions spin-orbit coupling Andreev reflection current-induced spin polarization
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Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure 被引量:6
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《Science Foundation in China》 CAS 2017年第2期29-,共1页
Subject Code:F04 With the support by the National Natural Science Foundation of China,a study by the research group led by Prof.Wang Kaiyou(王开友)from the Institute of Semiconductors,Chinese Academy of Sciences demon... Subject Code:F04 With the support by the National Natural Science Foundation of China,a study by the research group led by Prof.Wang Kaiyou(王开友)from the Institute of Semiconductors,Chinese Academy of Sciences demonstrates all-electric and programmable manipulations of ferromagnetic bits without external 展开更多
关键词 Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure PMN
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Numerical modeling of current-induced scour around multi-wall foundation using large-eddy simulation
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作者 Jiujiang WU Lingjuan WANG Qiangong CHENG 《Frontiers of Structural and Civil Engineering》 SCIE EI CSCD 2023年第4期546-565,共20页
Scouring is one of the primary triggers of failure for bridges across rivers or seas.However,research concerning the scour mechanism of multi-wall foundations(MWFs)remains scarce,hindering the further application of M... Scouring is one of the primary triggers of failure for bridges across rivers or seas.However,research concerning the scour mechanism of multi-wall foundations(MWFs)remains scarce,hindering the further application of MWFs.In this study,for the first time,the scouring effect caused by unidirectional flow around MWFs was examined numerically using FLOW-3D involving a large-eddy simulation.Initially,the applicability of the scouring model and input parameters was validated using a case study based on published measured data.Subsequently,the scouring effects of four MWFs with different wall arrangements and inflow angles,including the flow field analysis and scour pit and depth,were investigated thoroughly.It was found that the maximum scour depth of MWFs with an inflow angle of 0°was smaller than that of those with an inflow angle of 45°,regardless of the wall arrangement.Meanwhile,changing the inflow angle significantly affects the scour characteristics of MWFs arranged in parallel.In practical engineering,MWFs arranged in parallel are preferred considering the need for scouring resistance.However,a comparative analysis should be performed to consider comprehensively whether to adopt the form of a round wall arrangement when the inflow angle is not 0°or the inflow direction is changeable. 展开更多
关键词 multi-wall foundation current-induced scour bridge foundation large-eddy simulation numerical analysis
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Spin switching in antiferromagnets using Néel-order spin-orbit torques 被引量:1
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作者 P Wadley K W Edmonds 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第10期88-95,共8页
Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to ... Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin–orbit coupling in environments with particular crystalline or structural symmetries, the electric current can induce an effective magnetic field with a sign that alternates on the lengthscale of the unit cell. The staggered effective field provides an efficient mechanism for switching antiferromagnetic domains and moving antiferromagnetic domain walls, with writing speeds in the terahertz regime. 展开更多
关键词 SPINTRONICS ANTIFERROMAGNETIC current-induced torques magnetic domains
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Current-voltage characteristics with several threshold currents in insulating low-doped La_(1–x)Sr_xMnO_3(x=0.10) thin films
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作者 赵昆 丰家峰 +4 位作者 何萌 吕惠宾 金奎娟 周岳亮 杨国桢 《Journal of Rare Earths》 SCIE EI CAS CSCD 2008年第4期567-570,共4页
The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves ... The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime. 展开更多
关键词 current-induced resistive effect MANGANITES voltage-current characteristic rare earths
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Magnetization switching modes in nanopillar spin valve under the external field
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作者 HUANG HouBing MA XingQiao +3 位作者 YUE Tao XIAO ZhiHua SHI SanQiang CHEN LongQing 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2011年第7期1227-1234,共8页
The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field.Magnetization switching is found to take place when the... The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field.Magnetization switching is found to take place when the current density exceeds a threshold.By analyzing precessional trajectories,evolutions of domain walls and magnetization switching times under the perpendicular magnetic field,there are two different magnetization switching modes:nucleation and domain wall motion reversal;uniform magnetization reversal.The first mode occurs at lower current density,which is realized by the formation of the reversal nucleus and domain wall motion;while the second mode occurs through complete magnetization reversal at higher current density.Furthermore,the switching time reduces as the spin-polarized current density increases,which can also be grouped into two reversal modes. 展开更多
关键词 current-induced nanopiUar spin transfer torque magnetization switching domain wall motion reversal uniform mag-netization reversal
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