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Centimeter-sized Cs_(3)Cu_(2)I_(5)single crystals grown by oleic acid assisted inverse temperature crystallization strategy and their films for high-quality X-ray imaging 被引量:2
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作者 Tao Chen Xin Li +9 位作者 Yong Wang Feng Lin Ruliang Liu Wenhua Zhang Jie Yang Rongfei Wang Xiaoming Wen Bin Meng Xuhui Xu Chong Wang 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2023年第4期382-389,共8页
Low-dimensional halide perovskites have become the most promising candidates for X-ray imaging,yet the issues of the poor chemical stability of hybrid halide perovskite,the high poisonousness of lead halides and the r... Low-dimensional halide perovskites have become the most promising candidates for X-ray imaging,yet the issues of the poor chemical stability of hybrid halide perovskite,the high poisonousness of lead halides and the relatively low detectivity of the lead-free halide perovskites which seriously restrain its commercialization.Here,we developed a solution inverse temperature crystal growth(ITCG)method to bring-up high quality Cs_(3)Cu_(2)I_(5)crystals with large size of centimeter order,in which the oleic acid(OA)is introduced as an antioxidative ligand to inhibit the oxidation of cuprous ions effieiently,as well as to decelerate the crystallization rate remarkalby.Based on these fine crystals,the vapor deposition technique is empolyed to prepare high quality Cs_(3)Cu_(2)I_(5)films for efficient X-ray imaging.Smooth surface morphology,high light yields and short decay time endow the Cs_(3)Cu_(2)I_(5)films with strong radioluminescence,high resolution(12 lp/mm),low detection limits(53 nGyair/s)and desirable stability.Subsequently,the Cs_(3)Cu_(2)I_(5)films have been applied to the practical radiography which exhibit superior X-ray imaging performance.Our work provides a paradigm to fabricate nonpoisonous and chemically stable inorganic halide perovskite for X-ray imaging. 展开更多
关键词 Inverse temperature crystal growth Cs_(3)Cu_(2)I_(5)single crystal Vapor deposition Cs_(3)Cu_(2)I_(5)films X-ray imaging
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Enhancing superconductivity of ultrathin YBa_(2)Cu_(3)O_(7)-δ films by capping non-superconducting oxides 被引量:1
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作者 Hai Bo Tianshuang Ren +2 位作者 Zheng Chen Meng Zhang Yanwu Xie 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第6期403-407,共5页
In this study,we have explored the ways to fabricate and optimize high-quality ultrathin YBa_(2)Cu_(3)O_(7)-δ(YBCO)films grown on single-crystal(001)SrTiO_(3) substrates.Nearly atomic-flat YBCO films are obtained by ... In this study,we have explored the ways to fabricate and optimize high-quality ultrathin YBa_(2)Cu_(3)O_(7)-δ(YBCO)films grown on single-crystal(001)SrTiO_(3) substrates.Nearly atomic-flat YBCO films are obtained by pulsed laser deposition.Our result shows that the termination of SrTiO_(3) has only a negligible effect on the properties of YBCO.In contrast,we found that capping a non-superconducting oxide layer can generally enhance the superconductivity of YBCO.PrBa_(2)Cu_(3)O_(7),La_(2)CuO_(4),LaMnO_(3),SrTiO_(3),and LaAlO_(3) have been examined as capping layers,and the minimum thickness of superconducting YBCO with capping is~2 unit cells–3 unit cells.This result might be useful in constructing good-performance YBCO-based field effect devices. 展开更多
关键词 YBa_(2)Cu_(3)O_(7)-δ(YBCO) SUPERCONDUCTIVITY OXIDES film
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Study on Morphology of Surface of Large Area YBCO Thin Films on Zr(Y)O_2 Substrate
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作者 王瑞坤 孙丽虹 +2 位作者 刘鸿飞 王小平 杨秉川 《Journal of Rare Earths》 SCIE EI CAS CSCD 1996年第3期195-200,共6页
Large area YBCO superconducting thin films were grown on the Zr(Y)O2 substrate at 750 and 800℃ respectively by magnetron sputtering, and the surface morphology was studied with AEM. STM and SEM with an EDS and ECP at... Large area YBCO superconducting thin films were grown on the Zr(Y)O2 substrate at 750 and 800℃ respectively by magnetron sputtering, and the surface morphology was studied with AEM. STM and SEM with an EDS and ECP attachments. The YBCO thin film was found to be a caxis orientated single crystal. At 800℃, the surface out-growths of the thin film Were mainly CuO particles and many small holes were found on the surface. which resulted in rougher surface; whereas, at 750℃, the out-growths were mainly the 123 structure in the form of rod-like and polygon and the surface was much smoother because of less small holes on the surface. The mechanism of the thin film growth and the formation of the small holes on the surface grown at the two temperature were discussed. 展开更多
关键词 Yba_2Cu_3O_y Thin film SURFACE MORPHOLOGY
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INFRARED DETECTOR USING SUPERCONDUCTING YBa_2Cu_3O_7-δTHIN FILMS
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作者 WU Youyu YI XinjianWuhan Automotive Polytechnic UniversityHuazhong University of Science and Technology 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 1999年第4期40-47,共8页
The patterning technologies and process order of high Tc(86K) super-conducting film bolometers have been studied. After the deposition, a conventional lithographic process was used to pattern the films with aqueous so... The patterning technologies and process order of high Tc(86K) super-conducting film bolometers have been studied. After the deposition, a conventional lithographic process was used to pattern the films with aqueous solution of HCl, and then the films were transferred into a tube furnace for annealing to form superconducting film. It eliminates the degradation of patterning process. The bolometric responsivity of approximately 34. 32 V/W is measured, and the detectivity is greater than 1. 62× 108cm · Hz1/2 · W-1, the noise equivalent powers NEP is 2. 1×10-9W. 展开更多
关键词 BOLOMETER PATTERNING etching solu- tion YBa_2Cu_3O_7 δ superconducting films
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Preparation of Y_(1-x)Ho_xBa_2Cu_3O_(7-δ) Superconductive Thin Films
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作者 彭正顺 杨秉川 +3 位作者 王小平 石东奇 华志强 赵忠贤 《Rare Metals》 SCIE EI CAS CSCD 1995年第2期106-109,共4页
Y_(1-x)Ho_xBa_2Cu_3O_(7-δ)(0<x<1) sinsle crystal thin films oriented with the caxis perpendicular to the sur-face were grown by DC magnetron sputtering technique. Target was pieced together with half of YBa_2Cu... Y_(1-x)Ho_xBa_2Cu_3O_(7-δ)(0<x<1) sinsle crystal thin films oriented with the caxis perpendicular to the sur-face were grown by DC magnetron sputtering technique. Target was pieced together with half of YBa_2Cu_3O_(7-δ)(YBCO) and half of HoBa_2Cu_3O_(7-δ)(HBCO) superconducting materials. As the distance between HBCO targetmaterial and substrate is varied , the Ho content in material is changed respectively. When the content of Ho is0. 7 (atom ratio) , the T_c>83K. 展开更多
关键词 e : Y_(1-x)Ho_xBa_2Cu_3O_(7-δ) SUPERCONDUCTOR Thin film DC magnetronsputtering High critical temperature
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High T_c HoBa_2Cu_3O_(7-δ) Thin Films Deposited on (100) Y_2O_3Stabilized ZrO_2 Substrates by Sputtering
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作者 彭正顺 杨秉川 +1 位作者 王小平 赵忠贤 《Rare Metals》 SCIE EI CAS CSCD 1995年第2期123-126,共4页
Thin films of superconductors HoBa_2Cu_3O_(7-δ)(HBCO) were prepared by DC-sputtering technique. The epi-taxial growth was controlled by the ratio of the oxygen pressure and Ar pressure (O_2/Ar) , the subetrate temper... Thin films of superconductors HoBa_2Cu_3O_(7-δ)(HBCO) were prepared by DC-sputtering technique. The epi-taxial growth was controlled by the ratio of the oxygen pressure and Ar pressure (O_2/Ar) , the subetrate temperature T_s and the distance of the target to subetrate. Thin films deposited under the optimum conditions (Po_2/P_(Ar)= 1:2 ; T_s=730℃) show a critical temlierature clase to 87K and a transition width less than 1K. X-raydiffraction analysis shows that the films are highiy c-axis oriented. Auger electron spectroscopy depth profilingdemonstrates Ho diffusion into the Zr(Y)O_2 subetrate owing to the Ho subetitution for Y. 展开更多
关键词 Superconducting material HoBa_2Cu_3O_(7-δ) Thin film
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磁控溅射Sn和CuS靶制备铜锡硫薄膜电池
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作者 徐信 王书荣 +4 位作者 陆熠磊 杨帅 李耀斌 唐臻 杨洪斌 《发光学报》 EI CAS CSCD 北大核心 2018年第11期1557-1564,共8页
为了验证采用金属单质靶与硫属化合物靶混合溅射法制备Cu_(2)Sn S_(3)(CTS)薄膜及太阳电池的可行性,在镀钼的钠钙玻璃上通过磁控溅射Sn和Cu S靶制备CTS预制层后,再经过低温合金化和高温硫化过程制备CTS薄膜,研究了硫化过程中不同升温速... 为了验证采用金属单质靶与硫属化合物靶混合溅射法制备Cu_(2)Sn S_(3)(CTS)薄膜及太阳电池的可行性,在镀钼的钠钙玻璃上通过磁控溅射Sn和Cu S靶制备CTS预制层后,再经过低温合金化和高温硫化过程制备CTS薄膜,研究了硫化过程中不同升温速率对CTS薄膜表面形貌的影响。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)及配属的能谱仪(EDS)、拉曼散射(Raman)对薄膜的晶体结构、表面和截面形貌、薄膜组分、物相进行表征分析,利用紫外-可见光光度计和霍尔测试系统表征了薄膜的光电特性。在硫化升温速率为35℃/min的条件下,获得了表面致密平整且纯相的单斜结构CTS薄膜,并用CTS薄膜制备了太阳电池。随后在标准测试条件(AM1.5,100 m W/cm^2,300 K)下采用KEITHLEY的2400数字源表测试了电池的I-V特性,其开路电压为299 m V,短路电流密度为16.6 m A/cm^2,光电转换效率为1.18%。结果表明,采用磁控溅射金属单质靶Sn与硫属化合物靶Cu S有望制备出高效CTS薄膜太阳电池。 展开更多
关键词 Cu_(2)SnS_(3)薄膜 磁控溅射 硫化 太阳电池
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室温脉冲激光原位沉积技术制备Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)/Bi_(2)S_(3)异质结及其光电性能
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作者 贾瑞彬 田静如 +3 位作者 沙震宗 夏丰金 马帅 于立岩 《青岛科技大学学报(自然科学版)》 CAS 2023年第3期30-37,共8页
采用具有磁性的Fe取代Cu_(2)ZnSnS_(4)(CZTS)中Zn组分,制备Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)(CZFTS)薄膜。将电子传输层Bi_(2)S_(3)与CZFTS耦合,采用室温脉冲激光沉积技术(RT-PLD)制备了CZFTS/Bi_(2)S_(3)异质结构。研究了Fe掺杂对于CZFT... 采用具有磁性的Fe取代Cu_(2)ZnSnS_(4)(CZTS)中Zn组分,制备Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)(CZFTS)薄膜。将电子传输层Bi_(2)S_(3)与CZFTS耦合,采用室温脉冲激光沉积技术(RT-PLD)制备了CZFTS/Bi_(2)S_(3)异质结构。研究了Fe掺杂对于CZFTS薄膜形貌、结晶度和吸光度的影响。测试了单层薄膜和异质结构的光电响应特性,实验表明与单层CZFTS薄膜相比,CZFTS/Bi_(2)S_(3)异质结在可见光区域内的光电响应速度至少提高了一个数量级,响应时间缩短至几十ms。 展开更多
关键词 Cu_(2)ZnSnS_(4)(CZTS) Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)(CZFTS) CZFTS/Bi_(2)S_(3)异质结 脉冲激光沉积 光电转换 光电探测
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Synthesis of Cu_(2)ZnSnS_(4)thin film from mixed solution of Cu_(2)SnS_(3)nanoparticles and Zn ions
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作者 Zheng-fu TONG Jia YANG +6 位作者 Chang YAN Meng-meng HAO Fang-yang LIU Liang-xing JIANG Yan-qing LAI Jie LI Ye-xiang LIU 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2016年第8期2102-2108,共7页
The Cu_(2)ZnSnS_(4)thin film was prepared by a facile solution method without vacuum environment and toxic substance.The formation mechanism of the film was studied by transmission electron microscopy(TEM),X-ray diffr... The Cu_(2)ZnSnS_(4)thin film was prepared by a facile solution method without vacuum environment and toxic substance.The formation mechanism of the film was studied by transmission electron microscopy(TEM),X-ray diffraction(XRD),scanning electron microscopy(SEM),energy dispersive X-ray spectroscopy(EDS),and Raman scattering measurements.Through cyclic voltammetry and photo-electricity tests,the electrocatalytic activity of the prepared film as the counter electrode of dye-sensitizedsolar cell was also studied.The results show that the mixed precursor solution mainly consists of Cu2SnS3 nanoparticles and Zn ions.After 550°C annealing process on the precursor film prepared from the mixed solution,Cu_(2)ZnSnS_(4)thin film is obtained.Besides,itis found that the prepared Cu_(2)ZnSnS_(4)thin film has the electrocatalytic activity toward the redox reaction of I3?/I?and the dye-sensitized solar cell with the prepared Cu_(2)ZnSnS_(4)thin film as the counter electrode achieves the efficiency of 1.09%. 展开更多
关键词 Cu_(2)ZnSnS_(4)thin film Cu_(2)SnS_(3)nanoparticle Zn ion ELECTROCATALYTIC dye-sensitized solar cells
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Study on Epitaxial YBa_2Cu_3O_(7-x) Thin Film Deposited on (1120) Sapphire with YSZ Buffer Layer
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作者 刘安生 邵贝羚 +3 位作者 陈岚峰 陈鹏飞 王瑞坤 袁冠森 《Journal of Rare Earths》 SCIE EI CAS CSCD 1996年第3期231-234,共4页
YBa2Cu3O7-x(YBCO) thin film has been epitaxially deposited on (1120) sapphire with Y2O3-stabilized ZrO2 (YSZ) buffer layer and shown a high critical current density Jc of 1. 6×106A/cm2 at 77 K in zero magnetic fi... YBa2Cu3O7-x(YBCO) thin film has been epitaxially deposited on (1120) sapphire with Y2O3-stabilized ZrO2 (YSZ) buffer layer and shown a high critical current density Jc of 1. 6×106A/cm2 at 77 K in zero magnetic field. The orientation relationship of the multilayer film superconductor has been determined. The(001) plane of the YBCO film is parallel to the(100) surface of the YSZ intermediate layer. YSZ buffer layer with(100) preferred orientation is about 20 nm thick and contains element Ba, due to out-diffusion of Ba from YBCO layer. The(100) preferred orientation of YSZ buffer permits the growth of high quality YBCO thin film. Y2BaCuO5 precipitates with small size distribute uniformly in the YBCO thin film and it is favourable to raise critical current density Jc. 展开更多
关键词 SUPERCONDUCTOR Yba_2Cu_3O_(7-x) thin film EPITAXY Microstructure Orientation
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退火时间及后退火对Cu_(2)(Cd x Zn_(1-x))SnS_(4)CdS薄膜太阳电池性能影响的研究
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作者 王佳文 黄勇 +3 位作者 郑超凡 王语灏 王威 毛梦洁 《人工晶体学报》 CAS 北大核心 2023年第3期476-484,共9页
Cu_(2)ZnSnS_(4)薄膜因其元素地壳含量丰富、无毒且具有优异的光电性能,受到研究者的广泛关注。本文基于纳米墨水法用Cd部分取代Zn制成了Cu_(2)(Cd x Zn_(1-x))SnS_(4)(CCZTS)薄膜,研究退火时间和后退火温度对薄膜及其太阳电池性能的影... Cu_(2)ZnSnS_(4)薄膜因其元素地壳含量丰富、无毒且具有优异的光电性能,受到研究者的广泛关注。本文基于纳米墨水法用Cd部分取代Zn制成了Cu_(2)(Cd x Zn_(1-x))SnS_(4)(CCZTS)薄膜,研究退火时间和后退火温度对薄膜及其太阳电池性能的影响。研究结果表明,所制备的薄膜为CCZTS相,无其他杂相,薄膜表面平整且致密,结晶性较好。随着退火时间增加,薄膜的晶粒尺寸有所增大,薄膜太阳电池的pn结质量得到提升,其性能也随之提高。通过对薄膜太阳电池进行后退火处理,分析了吸收层的元素扩散对电池性能的影响,在Cd元素形成梯度分布时,电池性能有所提高。随着后退火温度的增加,其电池性能和pn结质量呈现先提高后下降的趋势。经后退火300℃处理后,电池转换效率最佳,为3.13%。 展开更多
关键词 Cu_(2)(Cd x Zn_(1-x))SnS_(4)薄膜 CCZTS/CdS太阳电池 退火时间 后退火 纳米墨水法 化学浴沉积
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ZrO_(2)掺杂YBa_(2)Cu_(3)O_(7-δ)超导薄膜的磁通钉扎 被引量:1
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作者 童淑云 黄荣铁 +3 位作者 陈静 刘志勇 李敏娟 蔡传兵 《科学通报》 EI CAS CSCD 北大核心 2024年第8期1096-1104,共9页
YBa_(2)Cu_(3)O_(7-δ)(YBCO)超导薄膜的临界电流密度J_(c)会因为外磁场的增大而衰减.为了抑制这一现象,有必要引入人工钉扎中心.预制纳米晶能够实现对异质相大小和形状的预先调控,是一种非常高效的人工钉扎手段,能有效解决传统元素掺... YBa_(2)Cu_(3)O_(7-δ)(YBCO)超导薄膜的临界电流密度J_(c)会因为外磁场的增大而衰减.为了抑制这一现象,有必要引入人工钉扎中心.预制纳米晶能够实现对异质相大小和形状的预先调控,是一种非常高效的人工钉扎手段,能有效解决传统元素掺杂引起的尺寸和团聚问题.本文利用水热法可控地制备出两种尺寸小于10 nm的点状和棒状ZrO_(2)纳米晶,并采用葡萄糖酸对其表面进行修饰,实现它们在YBCO前驱液中的均匀单分散.单分散ZrO_(2)纳米晶的掺杂明显地提高了YBCO薄膜的低温磁通钉扎效果和在场临界载流性能,但是纳米晶掺杂量过多,又会因为生成BaZrO_(3)(BZO)而消耗过多Ba源,致使YBCO薄膜超导性能下降.另外,掺杂5%的点状ZrO_(2)纳米晶比棒状纳米晶对超导性能提升更优. 展开更多
关键词 YBa_(2)Cu_(3)O_(7-δ)超导薄膜 ZrO_(2)纳米晶 磁通钉扎 掺杂 临界电流密度
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Precision Control of Amphoteric Doping in Cu_(x)Bi_(2)Se_(3) Nanoplates
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作者 Huaying Ren Jingxuan Zhou +8 位作者 Ao Zhang Zixi Wu Jin Cai Xiaoyang Fu Jingyuan Zhou Zhong Wan Boxuan Zhou Yu Huang Xiangfeng Duan 《Precision Chemistry》 2024年第8期421-427,共7页
Copper-doped Bi_(2)Se_(3)(Cu_(x)Bi_(2)Se_(3))is of considerable interest for tailoring its electronic properties and inducing exotic charge correlations while retaining the unique Dirac surface states.However,the copp... Copper-doped Bi_(2)Se_(3)(Cu_(x)Bi_(2)Se_(3))is of considerable interest for tailoring its electronic properties and inducing exotic charge correlations while retaining the unique Dirac surface states.However,the copper dopants in Cu_(x)Bi_(2)Se_(3) display complex electronic behaviors and may function as either electron donors or acceptors depending on their concentration and atomic sites within the Bi_(2)Se_(3) crystal lattice.Thus,a precise understanding and control of the doping concentration and sites is of both fundamental and practical significance.Herein,we report a solution-based one-pot synthesis of Cu_(x)Bi_(2)Se_(3) nanoplates with systematically tunable Cu doping concentrations and doping sites.Our studies reveal a gradual evolution from intercalative sites to substitutional sites with increasing Cu concentrations.The Cu atoms at intercalative sites function as electron donors while those at the substitutional sites function as electron acceptors,producing distinct effects on the electronic properties of the resulting materials.We further show that Cu_(0.18)Bi_(2)Se_(3) exhibits superconducting behavior,which is not present in Bi_(2)Se_(3),highlighting the essential role of Cu doping in tailoring exotic quantum properties.This study establishes an efficient methodology for precise synthesis of Cu_(x)Bi_(2)Se_(3) with tailored doping concentrations,doping sites,and electronic properties. 展开更多
关键词 Cu_(x)Bi_(2)Se_(3) NANOPLATES amphoteric doping solution-based synthesis doping sites conducting thin film superconductivity
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