A highly reliable interface of self-aligned barrier CuSiN thin layer between the Cu film and the nano-porous SiC：H （p-SiC：H） capping barrier （k=3.3） has been developed in the present work. With the introduction ...A highly reliable interface of self-aligned barrier CuSiN thin layer between the Cu film and the nano-porous SiC：H （p-SiC：H） capping barrier （k=3.3） has been developed in the present work. With the introduction of self-aligned barrier （SAB） CuSiN between a Cu film and a p-SiC：H capping barrier, the interfacial thermal stability and the adhesion of the Cu/p-SiC：H film are considerably enhanced. A significant improvement of adhesion strength and thermal stability of Cu/p-SiC：H/SiOC：H film stack has been achieved by optimizing the pre-clean step before caplayer deposition and by forming the CuSiN-like phase. This cap layer on the surface of the Cu can provide a more cohesive interface and effectively suppress Cu atom migration as well.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11075112,61040034)Specialized Research Fund for the Doctoral Program of Higher Education(New Teachers,No.20100181120112)
文摘A highly reliable interface of self-aligned barrier CuSiN thin layer between the Cu film and the nano-porous SiC：H （p-SiC：H） capping barrier （k=3.3） has been developed in the present work. With the introduction of self-aligned barrier （SAB） CuSiN between a Cu film and a p-SiC：H capping barrier, the interfacial thermal stability and the adhesion of the Cu/p-SiC：H film are considerably enhanced. A significant improvement of adhesion strength and thermal stability of Cu/p-SiC：H/SiOC：H film stack has been achieved by optimizing the pre-clean step before caplayer deposition and by forming the CuSiN-like phase. This cap layer on the surface of the Cu can provide a more cohesive interface and effectively suppress Cu atom migration as well.
