CuIn（S,Se）2 thin films were prepared by thermal crystallization of co-sputtered Cu-In alloy precursors in S/Se atmosphere. In-depth compositional uniformity is an important prereq- uisite for obtaining device-qualit...CuIn（S,Se）2 thin films were prepared by thermal crystallization of co-sputtered Cu-In alloy precursors in S/Se atmosphere. In-depth compositional uniformity is an important prereq- uisite for obtaining device-quality CuIn（S,Se）2 absorber thin films. In order to figure out the influence of heat treatments on in-depth composition uniformity of CuIn（S,Se）2 thin films, two kinds of reaction temperature profiles were investigated. One process is ＂one step profile＂, referring to formation of CuIn（S,Se）2 thin films just at elevated temperature （e.g. 500 ℃）. The other is ＂two step profile＂, which allows for slow diffusion of S and Se elements into the alloy precursors at a low temperature before the formation and re-crystallization of CuIn（S,Se）2 thin films at higher temperature （e.g. first 250 ℃ then 500 ℃）. X-ray diffrac- tion studies reveal that there is a discrepancy in the shape of （112） peak. Samples annealed with ＂one step profile＂ have splits on （112） peaks, while samples annealed with ＂two step profile＂ have relatively symmetrical （112） peaks. Grazing incident X-ray diffraction and en- ergy dispersive spectrum measurements of samples successively etched in bromine methanol show that CuIn（S,Se）2 thin films have better in-depth composition uniformity after ＂two step profile＂ annealing. The reaction mechanism during the two thermal processing was also investigated by X-ray diffraction and Raman spectra.展开更多
In order to achieve low cost high efficiency thin film solar cells,a novel Semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is explored.Firstly...In order to achieve low cost high efficiency thin film solar cells,a novel Semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is explored.Firstly,the PV materials and technologies is investigated,then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported.These results shows that high quality CIGS polycrystalline thin films can be obtained by the ED method,in which the polycrystalline CIGS is definitely identified by the (112),(204,220) characteristic peaks of the tetragonal structure,the continuous CIGS thin film layers with particle average size of about 2μm of length and around 1 6μm of thickness.The thickness and solar grade quality of CIGS thin films can be produced with good repeatability.Discussion and analysis on the ED technique,CIGS energy band and sodium (Na) impurity properties,were also performed.The alloy CIGS exhibits not only increasing band gap with increasing x ,but also a change in material properties that is relevant to the device operation.The beneficial impurity Na originating from the low cost soda lime glass substrate becomes one prerequisite for high quality CIGS films.These novel material and technology are very useful for low cost high efficiency thin film solar cells and other devices.展开更多
光电化学水分解电池能够将太阳能直接转化为氢能,是一种理想的太阳能利用方式.p-n叠层电池具有理论转换效率高、成本低廉、材料选择灵活等优势,被认为是最具潜力的一类光电化学水分解电池.然而,目前这类叠层电池的太阳能转化效率还不高...光电化学水分解电池能够将太阳能直接转化为氢能,是一种理想的太阳能利用方式.p-n叠层电池具有理论转换效率高、成本低廉、材料选择灵活等优势,被认为是最具潜力的一类光电化学水分解电池.然而,目前这类叠层电池的太阳能转化效率还不高,主要原因是单个电极的效率太低.本文介绍了几种提高光电极分解水性能的方法—减小光生载流子的体相复合、表面复合以及抑制背反应等,同时综述了国内外关于几种p型半导体光阴极的研究进展,如Si、In P、Cu In1-xGaxS(Se)2、Cu2Zn Sn S4等.通过总结,作者提出一种p-Cu2Zn Sn S4(Cu In1-xGaxS(Se)2)/n-Ta3N5(Fe2O3)组装方式,有望获得高效低成本叠层光电化学水分解电池.展开更多
文摘CuIn（S,Se）2 thin films were prepared by thermal crystallization of co-sputtered Cu-In alloy precursors in S/Se atmosphere. In-depth compositional uniformity is an important prereq- uisite for obtaining device-quality CuIn（S,Se）2 absorber thin films. In order to figure out the influence of heat treatments on in-depth composition uniformity of CuIn（S,Se）2 thin films, two kinds of reaction temperature profiles were investigated. One process is ＂one step profile＂, referring to formation of CuIn（S,Se）2 thin films just at elevated temperature （e.g. 500 ℃）. The other is ＂two step profile＂, which allows for slow diffusion of S and Se elements into the alloy precursors at a low temperature before the formation and re-crystallization of CuIn（S,Se）2 thin films at higher temperature （e.g. first 250 ℃ then 500 ℃）. X-ray diffrac- tion studies reveal that there is a discrepancy in the shape of （112） peak. Samples annealed with ＂one step profile＂ have splits on （112） peaks, while samples annealed with ＂two step profile＂ have relatively symmetrical （112） peaks. Grazing incident X-ray diffraction and en- ergy dispersive spectrum measurements of samples successively etched in bromine methanol show that CuIn（S,Se）2 thin films have better in-depth composition uniformity after ＂two step profile＂ annealing. The reaction mechanism during the two thermal processing was also investigated by X-ray diffraction and Raman spectra.
基金Project Supported by the Innovation and Technology Fund ( ITF ) of The Government of The Hong Kong Special Administrative Region ( HK-SAR)China( Fund Grant Num ber:S/ P0 0 5 / 99)
文摘In order to achieve low cost high efficiency thin film solar cells,a novel Semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is explored.Firstly,the PV materials and technologies is investigated,then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported.These results shows that high quality CIGS polycrystalline thin films can be obtained by the ED method,in which the polycrystalline CIGS is definitely identified by the (112),(204,220) characteristic peaks of the tetragonal structure,the continuous CIGS thin film layers with particle average size of about 2μm of length and around 1 6μm of thickness.The thickness and solar grade quality of CIGS thin films can be produced with good repeatability.Discussion and analysis on the ED technique,CIGS energy band and sodium (Na) impurity properties,were also performed.The alloy CIGS exhibits not only increasing band gap with increasing x ,but also a change in material properties that is relevant to the device operation.The beneficial impurity Na originating from the low cost soda lime glass substrate becomes one prerequisite for high quality CIGS films.These novel material and technology are very useful for low cost high efficiency thin film solar cells and other devices.
文摘光电化学水分解电池能够将太阳能直接转化为氢能,是一种理想的太阳能利用方式.p-n叠层电池具有理论转换效率高、成本低廉、材料选择灵活等优势,被认为是最具潜力的一类光电化学水分解电池.然而,目前这类叠层电池的太阳能转化效率还不高,主要原因是单个电极的效率太低.本文介绍了几种提高光电极分解水性能的方法—减小光生载流子的体相复合、表面复合以及抑制背反应等,同时综述了国内外关于几种p型半导体光阴极的研究进展,如Si、In P、Cu In1-xGaxS(Se)2、Cu2Zn Sn S4等.通过总结,作者提出一种p-Cu2Zn Sn S4(Cu In1-xGaxS(Se)2)/n-Ta3N5(Fe2O3)组装方式,有望获得高效低成本叠层光电化学水分解电池.
