As an essential candidate for environment-friendly luminescent quantum dots(QDs),CuInS-based QDs have attracted more attention in recent years.However,several drawbacks still hamper their industrial applications,such ...As an essential candidate for environment-friendly luminescent quantum dots(QDs),CuInS-based QDs have attracted more attention in recent years.However,several drawbacks still hamper their industrial applications,such as lower photoluminescence quantum yield(PLQY),complex synthetic pathways,uncontrollable emission spectra,and insufficient photostability.In this study,CuInZnS@ZnS core/shell QDs was prepared via a one-pot/three-step synthetic scheme with accurate and tunable control of PL spectra.Then their ensemble spectroscopic properties during nucleation formation,alloying,and ZnS shell growth processes were systematically investigated.PL peaks of these QDs can be precisely manipulated from 530 to 850 nm by controlling the stoichiometric ratio of Cu/In,Zn^(2+)doping and ZnS shell growth.In particular,CuInZnS@ZnS QDs possess a significantly long emission lifetime(up to 750 ns),high PLQY(up to 85%),and excellent crystallinity.Their spectroscopic evolution is well validated by Cu-deficient related intragap emission model.By controlling the stoichiometric ratio of Cu/In,two distinct Cu-deficient related emission pathways are established based on the differing oxidation states of Cu defects.Therefore,this work provides deeper insights for fabricating high luminescent ternary or quaternary-alloyed QDs.展开更多
The deposition of copper selenide(CuSe)thin films was carried out using liquid phase chemical bath deposition process at the optimized growth parameters as:60℃deposition temperature,90 minutes deposition time,pH equa...The deposition of copper selenide(CuSe)thin films was carried out using liquid phase chemical bath deposition process at the optimized growth parameters as:60℃deposition temperature,90 minutes deposition time,pH equal to 10.5±0.1 and 72±2 r/min speed of mechanical rotation.The as-grown deposits exhibited excellent uniformity and physical adherency with the substrate surface and are smooth and diffusely reflecting with colour changing from yellowish orange to dark chocolate during deposition.The layer is of the order of 300 nm thick.The EDS analysis technique gave film composition to be nearly stoichiometric(Cu=47.89%,Se=52.11%).An X-ray diffraction analysis showed CuSe to be polycrystalline hexagonal with a good match of d-values and intensities of reflections.The crystallite size is in the nanorange(50-60 nm).The as-deposited CuSe exhibited a high coefficient of absorption(α=105cm-1)with a direct optical band gap of 1.81 eV.Compared to other chalcogenides,CuSe films exhibit low resistance;room temperature electrical resistivity being 1.55×103?cm.The electrical conductivity decreased with increase in temperature up to 473 K;showing totally unusual behaviour from that of the semiconducting property.The thermo probe measurements showed n-type conduction of the samples.展开更多
基金Fund Project for Transformation of Scientific and Technological Achievements of Jiangsu Province of China(BA2023020)。
文摘As an essential candidate for environment-friendly luminescent quantum dots(QDs),CuInS-based QDs have attracted more attention in recent years.However,several drawbacks still hamper their industrial applications,such as lower photoluminescence quantum yield(PLQY),complex synthetic pathways,uncontrollable emission spectra,and insufficient photostability.In this study,CuInZnS@ZnS core/shell QDs was prepared via a one-pot/three-step synthetic scheme with accurate and tunable control of PL spectra.Then their ensemble spectroscopic properties during nucleation formation,alloying,and ZnS shell growth processes were systematically investigated.PL peaks of these QDs can be precisely manipulated from 530 to 850 nm by controlling the stoichiometric ratio of Cu/In,Zn^(2+)doping and ZnS shell growth.In particular,CuInZnS@ZnS QDs possess a significantly long emission lifetime(up to 750 ns),high PLQY(up to 85%),and excellent crystallinity.Their spectroscopic evolution is well validated by Cu-deficient related intragap emission model.By controlling the stoichiometric ratio of Cu/In,two distinct Cu-deficient related emission pathways are established based on the differing oxidation states of Cu defects.Therefore,this work provides deeper insights for fabricating high luminescent ternary or quaternary-alloyed QDs.
文摘The deposition of copper selenide(CuSe)thin films was carried out using liquid phase chemical bath deposition process at the optimized growth parameters as:60℃deposition temperature,90 minutes deposition time,pH equal to 10.5±0.1 and 72±2 r/min speed of mechanical rotation.The as-grown deposits exhibited excellent uniformity and physical adherency with the substrate surface and are smooth and diffusely reflecting with colour changing from yellowish orange to dark chocolate during deposition.The layer is of the order of 300 nm thick.The EDS analysis technique gave film composition to be nearly stoichiometric(Cu=47.89%,Se=52.11%).An X-ray diffraction analysis showed CuSe to be polycrystalline hexagonal with a good match of d-values and intensities of reflections.The crystallite size is in the nanorange(50-60 nm).The as-deposited CuSe exhibited a high coefficient of absorption(α=105cm-1)with a direct optical band gap of 1.81 eV.Compared to other chalcogenides,CuSe films exhibit low resistance;room temperature electrical resistivity being 1.55×103?cm.The electrical conductivity decreased with increase in temperature up to 473 K;showing totally unusual behaviour from that of the semiconducting property.The thermo probe measurements showed n-type conduction of the samples.
