Kirkendall voids(KVs)at the Cu/Sn interface are a typical failure in integrated circuits,leading to solder joint cracking and electrical disconnection.Although the formation of KVs has been attributed to the differenc...Kirkendall voids(KVs)at the Cu/Sn interface are a typical failure in integrated circuits,leading to solder joint cracking and electrical disconnection.Although the formation of KVs has been attributed to the difference in atomic diffusion rates at the Cu/Sn interface,the role of Cu intrinsic"quality"parameters(crystal defects)in this process remains unclear.This work systematically investigated the effects of Cu crystal defects on KVs:Cu substrates with different lattice defects and grain boundaries were prepared using proprietary electrodeposition additives,and the number of defects was quantitatively characterized by micro-strain,geometric dislocation density,and geometric phase analysis.The thermal aging experiments further showed that the formation of intermetallic compounds and KVs was related to crystal defect energy.When the grain boundary energy was higher than the lattice energy,the additional driving force resulted in short-circuit diffusion,causing local Cu depletion and voids.The lowcrystal-defect samples maintained the local Cu/Sn interdiffusion equilibrium,resulting in fewer voids after 1000 h.This study emphasizes that regulating the crystal defects can reduce KVs and provides a new insight for improving the integrated solder joint's reliability.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.62274172 and 62304143)High-level Talent Innovation and Entrepreneurship Plan of Shenzhen Key Technology Research and Development Team Funding Application(No.JSGGKQTD20221101115650008)+2 种基金Shenzhen-Hong Kong-Macao Science and Technology Plan Project(Category C)(No.SGDX20220530111004028)Macao Science and Technology Development Fund(FDCT)for funding(No.0013/2024/RIB1)the Multi-Year Research Grant(MYRG)from University of Macao(Nos.MYRG-GRG2023-00140-IAPME-UMDF and MYRG-GRG2024-00206-IAPME)
文摘Kirkendall voids(KVs)at the Cu/Sn interface are a typical failure in integrated circuits,leading to solder joint cracking and electrical disconnection.Although the formation of KVs has been attributed to the difference in atomic diffusion rates at the Cu/Sn interface,the role of Cu intrinsic"quality"parameters(crystal defects)in this process remains unclear.This work systematically investigated the effects of Cu crystal defects on KVs:Cu substrates with different lattice defects and grain boundaries were prepared using proprietary electrodeposition additives,and the number of defects was quantitatively characterized by micro-strain,geometric dislocation density,and geometric phase analysis.The thermal aging experiments further showed that the formation of intermetallic compounds and KVs was related to crystal defect energy.When the grain boundary energy was higher than the lattice energy,the additional driving force resulted in short-circuit diffusion,causing local Cu depletion and voids.The lowcrystal-defect samples maintained the local Cu/Sn interdiffusion equilibrium,resulting in fewer voids after 1000 h.This study emphasizes that regulating the crystal defects can reduce KVs and provides a new insight for improving the integrated solder joint's reliability.
