This research studied the mechanism of the corrosion resistance enhancement of artificially aged 7075 aluminium alloy using advanced Cs-corrected scanning transmission electron microscopy(STEM).The corrosion behaviors...This research studied the mechanism of the corrosion resistance enhancement of artificially aged 7075 aluminium alloy using advanced Cs-corrected scanning transmission electron microscopy(STEM).The corrosion behaviors of artificially aged 7075 aluminium alloys in a 3.5 wt.%NaCl solution were investigated by impedance spectra,equivalent circuit analyses,polarization measurements and immersion tests.The results show that a longer aging treatment leads to better corrosion resistance,which can be attributed to the following microstructural features,as revealed by STEM.The Cu segregation at grain boundaries under over-aged conditions helps retard intergranular corrosion.The Mg(Zn,Cu)_(2) precipitates formed on the surfaces of Al_(18)Mg_(3)(Cr,Mn)_(2) dispersoids effectively insulate the dispersoids as cathodes in corrosion,from the Al matrix.This study demonstrates a potential strategy to design corrosion-resistant alloys achieved by proper alloying and subsequent aging.展开更多
Interfacial phase change memory （iPCM） based on GeTe and Sb2Te3 superlattices （SLs） is an emerging contender for non-volatile data storage applications. A detailed knowledge of the atomic structure of these materi...Interfacial phase change memory （iPCM） based on GeTe and Sb2Te3 superlattices （SLs） is an emerging contender for non-volatile data storage applications. A detailed knowledge of the atomic structure of these materials is crucial for further development of SLs and for a better understanding of the resistivity switching characteristics of iPCM devices. In this work, crystalline GeTe-Sb2TeB- based SLs, produced by pulsed laser deposition onto a Si（111） substrate at temperatures lower than in previous studies, are analyzed by advanced scanning transmission electron microscopy. The results reveal the formation of Ge-rich Ge（x＋y）Sb（2-y）Tez building blocks with specific numbers of ordered Ge cation layers （between I and 5） and disordered cation layers （4） for z = 6-10, as well as intermixed cation layers for z = 5, within the SLs. The G Ge（x＋y）Sb（2-y）Tez units are separated from the Sb2Te3 building blocks by van der Waals gaps. In particular, the interlayer bonding is promoted by the formation of outermost cation layers consisting of intermixed GeSb within the building blocks adjacent to the van der Waals gaps. The Ge（x＋y）Sb（2-y）Tez units with z 〉 5 retain metastable crystal structures with two-dimensional bonding within the SLs. The present study shed new light on the possible configurations of the building units that can be formed during the synthesis of GeTe-Sb2Te3-based iPCM materials. In addition, a possible switching mechanism active in iPCM materials is discussed.展开更多
基金supported by the Open Fund of the State Key Laboratory of Refractories and Metallurgy,China(No.G201907)。
文摘This research studied the mechanism of the corrosion resistance enhancement of artificially aged 7075 aluminium alloy using advanced Cs-corrected scanning transmission electron microscopy(STEM).The corrosion behaviors of artificially aged 7075 aluminium alloys in a 3.5 wt.%NaCl solution were investigated by impedance spectra,equivalent circuit analyses,polarization measurements and immersion tests.The results show that a longer aging treatment leads to better corrosion resistance,which can be attributed to the following microstructural features,as revealed by STEM.The Cu segregation at grain boundaries under over-aged conditions helps retard intergranular corrosion.The Mg(Zn,Cu)_(2) precipitates formed on the surfaces of Al_(18)Mg_(3)(Cr,Mn)_(2) dispersoids effectively insulate the dispersoids as cathodes in corrosion,from the Al matrix.This study demonstrates a potential strategy to design corrosion-resistant alloys achieved by proper alloying and subsequent aging.
文摘Interfacial phase change memory （iPCM） based on GeTe and Sb2Te3 superlattices （SLs） is an emerging contender for non-volatile data storage applications. A detailed knowledge of the atomic structure of these materials is crucial for further development of SLs and for a better understanding of the resistivity switching characteristics of iPCM devices. In this work, crystalline GeTe-Sb2TeB- based SLs, produced by pulsed laser deposition onto a Si（111） substrate at temperatures lower than in previous studies, are analyzed by advanced scanning transmission electron microscopy. The results reveal the formation of Ge-rich Ge（x＋y）Sb（2-y）Tez building blocks with specific numbers of ordered Ge cation layers （between I and 5） and disordered cation layers （4） for z = 6-10, as well as intermixed cation layers for z = 5, within the SLs. The G Ge（x＋y）Sb（2-y）Tez units are separated from the Sb2Te3 building blocks by van der Waals gaps. In particular, the interlayer bonding is promoted by the formation of outermost cation layers consisting of intermixed GeSb within the building blocks adjacent to the van der Waals gaps. The Ge（x＋y）Sb（2-y）Tez units with z 〉 5 retain metastable crystal structures with two-dimensional bonding within the SLs. The present study shed new light on the possible configurations of the building units that can be formed during the synthesis of GeTe-Sb2Te3-based iPCM materials. In addition, a possible switching mechanism active in iPCM materials is discussed.
