The interdependence of electrical parameters has long inhibited the progress of bismuth telluride(Bi_(2)Te3),limiting its widespread application in thermoelectric cooling and power generation.This work investigates th...The interdependence of electrical parameters has long inhibited the progress of bismuth telluride(Bi_(2)Te3),limiting its widespread application in thermoelectric cooling and power generation.This work investigates the n-type Bi_(2)Te_(2.79)Se_(0.21)I_(0.004)(Bi_(2)(Te,Se)_(3),BTS)system with light Zn doping,revealing that Zn addition simultaneously enhances the Seebeck coefficient(S)and electrical conductivity(σ)through the modulation of defect composition and multi-level band regulation.The substitution of Zn atoms at Bi sites enhances S via bandgap(E_(g))widening,band flattening,and band splitting effects,contributing to a competitive power factor(PF)of∼60μW⋅cm^(−1)⋅K^(−2).Additionally,thermal conductivity is maintained at a low level,leading to an extraordinary figure-of-merit(ZT)value of∼1.3 at room temperature.Furthermore,the Bi_(2)Zn_(0.01)Te_(2.79)Se_(0.21)I_(0.004) system demonstrates impressive thermoelectric device performance,with a maximum cooling temperature difference(ΔT_(max))of∼70.0 K at 300 K,rising to∼78.0 K at 323 K and∼85.7 K at 343 K,as well as a maximum conversion efficiency(η_(max))of∼6.2%under aΔT of 200 K.This study clarifies the mechanism of Zn doping and presents a cost-effective strategy for enhancing the performance of n-type BTS thermoelectrics and their devices.展开更多
The doping evolution of the nodal electron dynamics in the trilayer cuprate superconductor Bi_(2)Sr_(2)Ca_(2)Cu_(3)O_(10+δ)(Bi2223)is investigated using high-resolution laser-based angle-resolved photoemission spectr...The doping evolution of the nodal electron dynamics in the trilayer cuprate superconductor Bi_(2)Sr_(2)Ca_(2)Cu_(3)O_(10+δ)(Bi2223)is investigated using high-resolution laser-based angle-resolved photoemission spectroscopy(ARPES).Bi2223single crystals with different doping levels are prepared by controlled annealing,which cover the underdoped,optimallydoped and overdoped regions.The electronic phase diagram of Bi2223 is established which describes the Tcdependence on the sample doping level.The doping dependence of the nodal Fermi momentum for the outer(OP)and inner(IP)CuO_(2)planes is determined.Charge distribution imbalance between the OP and IP CuO_(2)planes is quantified,showing enhanced disparity with increasing doping.Nodal band dispersions demonstrate a prominent kink at~94 meV in the IP band,attributed to the unique Cu coordination in the IP plane,while a weaker~60 meV kink is observed in the OP band.The nodal Fermi velocity of both OP and IP bands is nearly constant at~1.62 eV·A independent of doping.These results provide important information to understand the origin of high Tcand superconductivity mechanism in high temperature cuprate superconductors.展开更多
High-entropy carbide ceramics(HECCs)exhibit superior properties compared to their constituent bi-nary compounds.However,high synthesis and sintering temperature are main obstacles that limit their widespread applicati...High-entropy carbide ceramics(HECCs)exhibit superior properties compared to their constituent bi-nary compounds.However,high synthesis and sintering temperature are main obstacles that limit their widespread applications.To address this issue,compositional and particle size controllable high-entropy(Ti_(0.2)Zr_(0.2)Hf_(0.2)Nb02Ta_(0.2))C_(x) powders were successfully prepared by a sugar hydrogel combined with the carbothermal reduction method.Owing to the introduction of carbon vacancy,the temperature for the formation of single-phase solid solution of the high-entropy(Ti_(0.2)Zr_(0.2)Hf_(0.2)Nb_(0.2)Ta_(0.2))C_(x) powders was decreased,and the addition of nitrogen decreased the densification temperature of the high-entropy(Ti_(0.2)Zr_(0.2)Hf_(0.2)Nb_(0.2)Ta_(0.2))C_(0.95) ceramic by 200℃.In addition,the flexural strength and fracture toughness of the high-entropy(Ti_(0.2)Zr_(0.2)Hf_(0.2)Nb_(0.2)Ta_(0.2))C_(0.95) ceramic were improved by 29%and 30%,respectively,compared with those without nitrogen doping.Atomic-resolution high angle annular dark field scanning transmission electron microscopy(HAADF-STEM)and energy dispersive spectroscopy(EDS)mapping re-veal that the segregation of N and small cation Ti as well as large lattice strains are responsible for the enhanced mechanical properties.Furthermore,with the introduction of nitrogen,the onset oxidation tem-perature(OOT)was increased,while the parabolic oxidation rate constant was decreased,revealing the beneficial effect of nitrogen doping on oxidation resistance.These results demonstrate that nitrogen dop-ing can not only improve the mechanical properties of HECCs but also enhance the oxidation resistance,which paves the way for the wide application of HECCs.展开更多
Mn^(2+)-doped CsPbCl_(3)(Mn^(2+):CsPbCl_(3)) nanocrystals(NCs) have attracted considerable attention due to their unique strong and broad orange-red emission band,presenting promising applications in the field of phot...Mn^(2+)-doped CsPbCl_(3)(Mn^(2+):CsPbCl_(3)) nanocrystals(NCs) have attracted considerable attention due to their unique strong and broad orange-red emission band,presenting promising applications in the field of photoelectric devices.However,pristine Mn^(2+):CsPbCl_(3)NCs commonly suffer from low photoluminescence quantum yield(PL QY) and stability issues.Herein,we introduced europium ions(Eu^(3+))into Mn^(2+):CsPbCl_(3)NCs via the thermal injection synthesis method to obtain high performance Eu^(3+)and Mn^(2+)codoped CsPbCl_(3)(Eu^(3+)/Mn^(2+):CsPbCl_(3)) NCs.The maximum PL QY of the resulting Eu^(3+)/Mn^(2+):CsPbCl_(3)NCs reaches up to 90.92%.It is found that the doping of Eu^(3+)ions significantly reduces the non-radiative recombination caused by high defect states,and improves the energy transfer efficiency from exciton to Mn^(2+),thereby boosting the PL performance.Moreover,doping Eu^(3+)ions notably improves the UV-light and water stability of Mn^(2+):CsPbCl_(3)NCs.We further demonstrate the application versatility of Eu^(3+)/Mn^(2+):CsPbCl_(3)NCs in white light emitting diodes(WLEDs) and optical anticounterfeiting applications.This work provides a valuable perspective for the attainment of high performance Mn^(2+):CsPbCl_(3)NCs and lays a foundation for the codoping of other lanthanide ions to adjust the luminescence properties of Mn^(2+):CsPbCl_(3)NCs.展开更多
The ultra-high nickel cathode material has important application prospect in power lithium-ion batteries.However,the poor structural stability and serious surface/interfacial side reactions during long cycles severely...The ultra-high nickel cathode material has important application prospect in power lithium-ion batteries.However,the poor structural stability and serious surface/interfacial side reactions during long cycles severely hinder the material's practical application.In this paper,Cs^(+)doping and polymethyl methacrylate(PMMA)coating are used to synergistically modify the NCM955 material.The results show that the corresponding discharge specific capacity of NCMCs-2@P-2 material reaches 152.02 m Ah/g at 1 C(1 C=200 m A/g)and 125.66 m Ah/g at 5 C after 300 cycles,and the capacity retention is 78.11%and72.21%,respectively.In addition,it still maintains 156.36 m Ah/g discharge specific capacity at 10 C,and these rate and cycle properties exceed those reported on ultra-high nickel cathode material.Moreover,NCMCs-2@P-2 material has higher migration energy barrier of Ni^(2+)and lower migration energy barrier of Li+than that of NCM955 material.Therefore,NCMCs-2@P-2 material has excellent electrochemical properties,which has been proved by a series of structural characterization,theoretical calculation and performance test.The synergistic enhancement of Cs^(+)doping and PMMA coating accelerates lithium ion diffusion kinetics,stabilizes crystal structure,and inhabits surface/interface side reaction.展开更多
Cerium oxide is an earth-abundant,highly researched multifunctional oxide with great technological importance and wide applications area.Trivalent rare earth(RE^(3+))dopants modify the defects concentration,create ple...Cerium oxide is an earth-abundant,highly researched multifunctional oxide with great technological importance and wide applications area.Trivalent rare earth(RE^(3+))dopants modify the defects concentration,create plenty of Ce^(3+)■Ce^(4+)redox centres and generate numerous oxygen vacancies than the pure ceria.In the present work,CeO_(2)(CE),10 mol%Gd doped ceria(Ce_(0.9)Gd_(0.1)O_(2-δ);CGO),and 10 mol%Sm doped ceria(Ce_(0.9)Sm_(0.1)O_(2-δ);CSO)were synthesized by sol-gel auto-combustion method.The phase formation,particle morphology,and elemental distribution of the synthesized powder samples were studied by X-ray diffraction,Fourier transform infrared spectroscopy,field emission scanning electron microscopy,and energy dispersive X-ray analysis.UV-diffuse reflectance spectroscopy was used to study the optical properties of the material.The band gaps of the CE,CSO and CGO were calculated to be2.81,2.71 and 2.60 eV,respectively.Electrochemical impedance spectroscopy(EIS)at room temperature(RT)investigated the materials'electrical properties.The improved electrical conductivity was registered for the doped variants.CGO reaches the highest one(0.4×10^(-7)S/cm)at RT.Cyclic voltammetry(CV)was performed to study the oxidation-reduction behavior and reversibility of the ion intercalation-deintercalation process of the materials in an electrolyte solution.For the doped ceria,a threefold improved current density is observed for the cathodic part,while a small improvement is reflected in the anodic part.Specific capacitance(C_(sp))was calculated at the Faradaic and non-Faradaic region of the voltammograms.C_(sp)of the materials increases in the order of CE<<CSO<CGO.The highest Csp 345.16 F/g at a scan rate of 5 mV/s is obtained for the CGO.Lastly,a correlation is drawn by analysing cyclic voltammograms to conclude the applicability of the doped ceria material for roomtemperature water-electrolysis in the alkaline medium.展开更多
Y_(3)Al_(2)Ga_(3)O_(12):Ce^(3+),Cr^(3+)(YAGG:Ce^(3+),Cr^(3+)),as a persistent luminescent material,has advantages of high initial luminescence intensity and long persistent time,which is promising in persistent lumine...Y_(3)Al_(2)Ga_(3)O_(12):Ce^(3+),Cr^(3+)(YAGG:Ce^(3+),Cr^(3+)),as a persistent luminescent material,has advantages of high initial luminescence intensity and long persistent time,which is promising in persistent luminescent material applications.At present,YAGG:Ce^(3+),Cr^(3+)powders exhibit good persistent performance,but their persistent performance of ceramics still needs to be further improved to meet the new requirements.In this work,(Y_(0.998)Ce_(0.002))_(3)(Al_(1-x)Cr_(x))_(2)Ga_(3)O_(12) ceramics with different Cr^(3+)doping concentrations were prepared by solid-state reaction,including air pre-sintering,hot isostatic pressing(HIP)post-treatment and air annealing,to investigate the effects of Cr^(3+)doping concentration on the microstructure,optical properties and persistent performance of the ceramics.The results showed that as the doping concentration of Cr^(3+)increased from 0.025%to 0.2%(in atom),no significant effect of Cr^(3+)concentration on the morphology of pre-sintered ceramics or HIP post-treatment ceramics was observed,but the in-line transmittance gradually increased while the persistent performance gradually decreased.Among them,YAGG:Ce^(3+),Cr^(3+)ceramics doped with 0.025%Cr^(3+)showed the strongest initial luminescence intensity exceeding 6055 mcd/m^(2) and a persistent time of 1030 min after air pre-sintering combined with HIP post-treatment and air annealing.By optimizing the Cr^(3+)doping concentration and the fabrication process,the persistent luminescence(PersL)performance of the YAGG:Ce^(3+),Cr^(3+)ceramics was obviously improved.展开更多
Lead-free halide double perovskites(HDPs)provide a promising platform for high-performance thermoelectric due to their intrinsically ultralow lattice thermal conductivity k_(l).In this study,we comprehensively investi...Lead-free halide double perovskites(HDPs)provide a promising platform for high-performance thermoelectric due to their intrinsically ultralow lattice thermal conductivity k_(l).In this study,we comprehensively investigate the lattice dynamics of Cs_(2)AgInCl_(6)using first-principles calculations.By explicitly incorporating four-phonon scattering and wave-like phonon tunneling,we predict a k_(l)of 0.52 W·m^(-1)·K^(-1)with a remarkably weak temperature dependence(k_(l)∝T^(-0.31)),confirming the intrinsically glass-like ultralow k_(l)in Cs_(2)AgInCl_(6).Further analyses reveal that hierarchical chemical bonds,loosely bonded rattling atoms and a mixed crystalline-liquid state collectively induce strong anharmonicity manifested in flat phonon modes.These factors dominate the glass-like thermal transport component of k_(l).This work uncovers the underlying mechanisms governing the unusual thermal transport properties in lead-free HDPs and offers guiding principles for designing novel energy conversion technologies.展开更多
This paper presents a newly designed ultra-thin, lead-free, and all-inorganic solar cell structure. The structure was optimized using the SCAPS-1D simulator, incorporating solid-state layers arranged as n-graphene/CsS...This paper presents a newly designed ultra-thin, lead-free, and all-inorganic solar cell structure. The structure was optimized using the SCAPS-1D simulator, incorporating solid-state layers arranged as n-graphene/CsSnGeI<sub>3</sub>/p-graphene. The objective was to investigate the potential of utilizing n-graphene as the electron transport layer and p-graphene as the hole transport layer to achieve maximum power conversion efficiency. Various materials for the electron transport layer were evaluated. The optimized cell structure achieved a maximum power conversion efficiency of 20.97%. The proposed solar cell structure demonstrates promising potential as an efficient, inorganic photovoltaic device. These findings provide important insights for developing and optimizing inorganic photovoltaic cells based on CsSnGeI<sub>3</sub>, with n-graphene electron transport layers and p-graphene hole transport layers.展开更多
The ceramics with Pb1.04Zr0.52Ti0.48O3 ＋ z wt.% Cr2O3 were prepared using the traditional technique. The effects of Cr2O3 doping on the phase structure, the microstructure, and the electrical properties of ceramics w...The ceramics with Pb1.04Zr0.52Ti0.48O3 ＋ z wt.% Cr2O3 were prepared using the traditional technique. The effects of Cr2O3 doping on the phase structure, the microstructure, and the electrical properties of ceramics were investigated. Meanwhile, the temperature stabilities of the resonant frequency （fx） were studied. The results showed that the △fr/fr,25℃ decreased with the addition of 0.2 wt.% - 0.8 wt.% Cr2O3 as compared with the undoped samples. The minimum value （-0.182%） of △fr/fr,25℃ was obtained for z = 0.6 wt.% Cr2O3 samples that sintered at 1260℃. The values of ε^τ33/ε0 = 1650, tanδ = 0.006, d33 = 328 pC/N, Kp = 0.63, Qm = 2300 were obtained when Cr2O3 was 0.6 wt.%, which exhibited more excellent piezoelectric properties than other compositions such as those with z = 0.2 wt.%, 0.4 wt.%, and 0.8 wt.%, but had a similar value as compared with the tmdoped samples. When the Cr2O3 additive increased, the Curie temperature moved toward low temperature and the changes of resonant frequency changed from positive to negative with increasing temperature.展开更多
Interface engineering has been regarded as an effective and noninvasive means to optimize the performance of perovskite solar cells(PSCs).Here,doping engineering of a ZnO electron transport layer(ETL)and CsPbI3/ZnO in...Interface engineering has been regarded as an effective and noninvasive means to optimize the performance of perovskite solar cells(PSCs).Here,doping engineering of a ZnO electron transport layer(ETL)and CsPbI3/ZnO interface engineering via introduction of an interfacial layer are employed to improve the performances of CsPbI3-based PSCs.The results show that when introducing a TiO2 buffer layer while increasing the ZnO layer doping concentration,the open-circuit voltage,power conversion efficiency,and fill factor of the CsPbI3-based PSCs can be improved to 1.31 V,21.06%,and 74.07%,respectively,which are superior to those of PSCs only modified by the TiO2 buffer layer or high-concentration doping of ZnO layer.On the one hand,the buffer layer relieves the band bending and structural disorder of CsPbI3.On the other hand,the increased doping concentration of the ZnO layer improves the conductivity of the TiO2/ZnO bilayer ETL because of the strong interaction between the TiO2 and ZnO layers.However,such phenomena are not observed for those of a PCBM/ZnO bilayer ETL because of the weak interlayer interaction of the PCBM/ZnO interface.These results provide a comprehensive understanding of the CsPbI3/ZnO interface and suggest a guideline to design high-performance PSCs.展开更多
0.144（K0.5Bi0.5）TiO3-0.85（Na0.5Bi0.5）TiO3-0.006BaTiO3（KBT-NBT-BT） lead-free piezoelectric ceramics were prepared using a conventional solid state method.The influence of Sb2O3 doping on the crystal phase,surface...0.144（K0.5Bi0.5）TiO3-0.85（Na0.5Bi0.5）TiO3-0.006BaTiO3（KBT-NBT-BT） lead-free piezoelectric ceramics were prepared using a conventional solid state method.The influence of Sb2O3 doping on the crystal phase,surface microstructure and properties of the KBT-NBT-BT lead-free piezoelectric ceramics were investigated using X-ray diffraction（XRD）,scanning electron microscope（SEM） and other analytical methods.The results show that all compositions are of pure perovskite structure solid states.Sb2O3 doping does not influence the microstructure of KBT-NBT-BT lead-free piezoelectric ceramics obviously in the Sb2O3 doping range of 0.1-0.5 wt.%.Sb2O3 functions as a donor when doped small amount,while functions as a acceptor when doped large amount.The piezoelectric strain constant（d33） increases first and then decreases;the dielectric constant（ε33^T/ε0） and the dielectric loss（tanδ） decrease continuously when the amount of Sb2O3 dopant increases.When the doping amount of Sb2O3 is 0.1 wt.%,the KBT-NBT-BT piezoelectric ceramics with good comprehensive properties are obtained,whose d33,ε33^T/ε0 and tanδ are 147 pC/N,1510 and 4.2%,respectively.展开更多
Ba0.85Ca0.15Ti0.9Zr0.1O3 （BCTZ） lead-free piezoelectric ceramics co-doped with CeO2 （x=0.1 wt.%, 0.2 wt.%, 0.3 wt.%, 0.4 wt.%, 0.5 wt.%） and Li2CO3 （0.6 wt.%） were prepared by conventional solid-state reaction m...Ba0.85Ca0.15Ti0.9Zr0.1O3 （BCTZ） lead-free piezoelectric ceramics co-doped with CeO2 （x=0.1 wt.%, 0.2 wt.%, 0.3 wt.%, 0.4 wt.%, 0.5 wt.%） and Li2CO3 （0.6 wt.%） were prepared by conventional solid-state reaction method. Influence of CeO2 doping amount on the piezoelectric properties, dielectric properties, phase composition and microstructure of prepared BCTZ lead-free piezoelectric ceramics doped with Li2CO3 were investigated by X-ray diffraction （XRD） and scanning electron microscopy （SEM） and other analytical methods. The results showed that the sintered temperature of BCTZ lead-free piezoelectric ceramics doped with CeO2 decreased greatly when Li2CO3 doping amount was 0.6 wt.%;a pure perovskite structure of BCTZ lead-free piezoelectric ceramics co-doped with Li2CO3 and CeO2 and sintered at 1050 ℃ could also be obtained. The piezoelectric constant （d33）, the relative permit-tivity （εr） and the planar electromechanical coupling factor （kp） of BCTZ ceramics doped with Li2CO3 increased firstly and then de-creased, the dielectric loss （tanδ） decreased firstly and then increased and decreased at last when CeO2 doping amount increased. The influence of CeO2 doping on the properties of BCTZ lead-free piezoelectric ceramics doped with Li2CO3 were caused by“soft effect”and “hard effect”piezoelectric additive and causing lattice distortion. When CeO2 doping amount （x） was 0.2 wt.%, the BCTZ ceramics doped with Li2CO3 （0.6 wt.%） and sintered at 1050 ℃ possessed the best piezoelectric property and dielectric property with d33 of 436 pC/N, kp of 48.3%,εr of 3650, tanδof 1.5%.展开更多
The Ba（0.96）Ca（0.04）Ti（0.90）Sn（0.10）O3-xNd2 O3（x = 0-0.08%） ceramics were prepared via traditional solid-state sintering method. The influences of Nd3＋ substitution on the phase structure, dielectric proper...The Ba（0.96）Ca（0.04）Ti（0.90）Sn（0.10）O3-xNd2 O3（x = 0-0.08%） ceramics were prepared via traditional solid-state sintering method. The influences of Nd3＋ substitution on the phase structure, dielectric properties,piezoelectric and ferroelectric properties of the ceramics were investigated. All the samples possess pure BaTiO3-type perovskite structure. MPB with orthorhombic and tetragonal phase coexist at around x = 0.03-0.04. Nd^（3＋） doping decreases both Tc and T（O-T） to lower temperature. All the samples exhibit an intermediate state with the coexistence of ferroelectric and diffuse relaxor ferroelectric behavior with the addition of Nd^（3＋）. The electric properties of the ceramics were optimized at x = 0.03 with d33, Kp, εr and Pr values of 545 pC/N, 51.9%, 24,412 and 10.74 μC/cm^2.展开更多
Quinary system piezoelectric ceramics PSN-PZN-PMS-PZT were prepared by using a two-step method. The effects of CeO2 doping on piezoelectric and dielectric properties of the system were investigated at morphotropic pha...Quinary system piezoelectric ceramics PSN-PZN-PMS-PZT were prepared by using a two-step method. The effects of CeO2 doping on piezoelectric and dielectric properties of the system were investigated at morphotropic phase boundary （MPB）. The results reveal that the relative dielectric constant ε33^T｜ε0, the Curie temperature To, the piezoelectric constant d33, the mechanical quality factor Qm, and the electromechanical coupling coefficient Kp are changed with the increase of CeO2 content. On the other hand, the effects of CeO2 doping on the dielectric properties of PSN-PZN-PMS-PZT piezoelectric ceramics at high electric field are consistent with the change at weak electric field. The values of dielectric constant and dielectric loss are enhanced with the increasing of electric field.展开更多
The formation of the mammalian nervous system and its maturation into sensory,motor,cognitive,and behavioral circuits is a complex process that begins during early embryogenesis and lasts until young adulthood.Impaire...The formation of the mammalian nervous system and its maturation into sensory,motor,cognitive,and behavioral circuits is a complex process that begins during early embryogenesis and lasts until young adulthood.Impaired neurodevelopment can result in various neurological and psychiatric conditions,jointly named neurodevelopmental disorders(NDDs).展开更多
基金supported by the National Key Research and Development Program of China (Grant No.2024YFA1210400)the National Science Fund for Distinguished Young Scholars (Grant No.52525101)+3 种基金the National Natural Science Foundation of China (Grant Nos.52450001 and 22409014)the International Cooperation and Exchange of the National Natural Science Foundation of China (Grant No.52411540237)the Tencent Xplorer Prizethe support of the National High-Level Talent Special Support Programs—Young Talents。
文摘The interdependence of electrical parameters has long inhibited the progress of bismuth telluride(Bi_(2)Te3),limiting its widespread application in thermoelectric cooling and power generation.This work investigates the n-type Bi_(2)Te_(2.79)Se_(0.21)I_(0.004)(Bi_(2)(Te,Se)_(3),BTS)system with light Zn doping,revealing that Zn addition simultaneously enhances the Seebeck coefficient(S)and electrical conductivity(σ)through the modulation of defect composition and multi-level band regulation.The substitution of Zn atoms at Bi sites enhances S via bandgap(E_(g))widening,band flattening,and band splitting effects,contributing to a competitive power factor(PF)of∼60μW⋅cm^(−1)⋅K^(−2).Additionally,thermal conductivity is maintained at a low level,leading to an extraordinary figure-of-merit(ZT)value of∼1.3 at room temperature.Furthermore,the Bi_(2)Zn_(0.01)Te_(2.79)Se_(0.21)I_(0.004) system demonstrates impressive thermoelectric device performance,with a maximum cooling temperature difference(ΔT_(max))of∼70.0 K at 300 K,rising to∼78.0 K at 323 K and∼85.7 K at 343 K,as well as a maximum conversion efficiency(η_(max))of∼6.2%under aΔT of 200 K.This study clarifies the mechanism of Zn doping and presents a cost-effective strategy for enhancing the performance of n-type BTS thermoelectrics and their devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.12488201 by X.J.Z.,12374066 by L.Z.,and 12374154 by X.T.L.)the National Key Research and Development Program of China(Grant Nos.2021YFA1401800 by X.J.Z.,2022YFA1604200 by L.Z.,2022YFA1403900 by G.D.L.and 2023YFA1406000by X.T.L.)+3 种基金the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB25000000by X.J.Z.)Innovation Program for Quantum Science and Technology(Grant No.2021ZD0301800 by X.J.Z.)the Youth Innovation Promotion Association of CAS(Grant No.Y2021006 by L.Z.)the Synergetic Extreme Condition User Facility(SECUF)。
文摘The doping evolution of the nodal electron dynamics in the trilayer cuprate superconductor Bi_(2)Sr_(2)Ca_(2)Cu_(3)O_(10+δ)(Bi2223)is investigated using high-resolution laser-based angle-resolved photoemission spectroscopy(ARPES).Bi2223single crystals with different doping levels are prepared by controlled annealing,which cover the underdoped,optimallydoped and overdoped regions.The electronic phase diagram of Bi2223 is established which describes the Tcdependence on the sample doping level.The doping dependence of the nodal Fermi momentum for the outer(OP)and inner(IP)CuO_(2)planes is determined.Charge distribution imbalance between the OP and IP CuO_(2)planes is quantified,showing enhanced disparity with increasing doping.Nodal band dispersions demonstrate a prominent kink at~94 meV in the IP band,attributed to the unique Cu coordination in the IP plane,while a weaker~60 meV kink is observed in the OP band.The nodal Fermi velocity of both OP and IP bands is nearly constant at~1.62 eV·A independent of doping.These results provide important information to understand the origin of high Tcand superconductivity mechanism in high temperature cuprate superconductors.
基金supported by the National Natural Science Foundation of China(Nos.52272060,51902067,51872066 and 52002001)the Key Program of National Natural Science Foundation of China(No.52032003)+6 种基金the China Postdoctoral Sci-ence Foundation(Nos.2019M651282 and 2022T150157)the Hei-longjiang Provincial Postdoctoral Science Foundation(Nos.LBH-Z19022 and LBH-TZ2207)Heilongjiang Touyan Innovation Team Program,the Shanghai Aerospace Science and Technology Innova-tion Fund(No.SAST2019-012)the Fundamental Research Funds for the Central Universities(No.FRFCU5710051022)the Science Foundation of National Key Laboratory of Science and Tech-nology on Advanced Composites in Special Environments(No.JCKYS2022603C011)the Domestic Visiting and Studying Project for Outstanding Young Key Talents in Universities of Anhui Province(No.gxgnfx2021131)Young and Middle-aged Top Talent Project of Anhui Polytechnic University.
文摘High-entropy carbide ceramics(HECCs)exhibit superior properties compared to their constituent bi-nary compounds.However,high synthesis and sintering temperature are main obstacles that limit their widespread applications.To address this issue,compositional and particle size controllable high-entropy(Ti_(0.2)Zr_(0.2)Hf_(0.2)Nb02Ta_(0.2))C_(x) powders were successfully prepared by a sugar hydrogel combined with the carbothermal reduction method.Owing to the introduction of carbon vacancy,the temperature for the formation of single-phase solid solution of the high-entropy(Ti_(0.2)Zr_(0.2)Hf_(0.2)Nb_(0.2)Ta_(0.2))C_(x) powders was decreased,and the addition of nitrogen decreased the densification temperature of the high-entropy(Ti_(0.2)Zr_(0.2)Hf_(0.2)Nb_(0.2)Ta_(0.2))C_(0.95) ceramic by 200℃.In addition,the flexural strength and fracture toughness of the high-entropy(Ti_(0.2)Zr_(0.2)Hf_(0.2)Nb_(0.2)Ta_(0.2))C_(0.95) ceramic were improved by 29%and 30%,respectively,compared with those without nitrogen doping.Atomic-resolution high angle annular dark field scanning transmission electron microscopy(HAADF-STEM)and energy dispersive spectroscopy(EDS)mapping re-veal that the segregation of N and small cation Ti as well as large lattice strains are responsible for the enhanced mechanical properties.Furthermore,with the introduction of nitrogen,the onset oxidation tem-perature(OOT)was increased,while the parabolic oxidation rate constant was decreased,revealing the beneficial effect of nitrogen doping on oxidation resistance.These results demonstrate that nitrogen dop-ing can not only improve the mechanical properties of HECCs but also enhance the oxidation resistance,which paves the way for the wide application of HECCs.
基金Project supported by the National Natural Science Foundation of China (12174075)the Scientific and Technological Bases and Talents of Guangxi (Guike AD21220016)+1 种基金Guangxi Science and Technology Major Project(AA23073018)the special fund for Guangxi Bagui Scholars。
文摘Mn^(2+)-doped CsPbCl_(3)(Mn^(2+):CsPbCl_(3)) nanocrystals(NCs) have attracted considerable attention due to their unique strong and broad orange-red emission band,presenting promising applications in the field of photoelectric devices.However,pristine Mn^(2+):CsPbCl_(3)NCs commonly suffer from low photoluminescence quantum yield(PL QY) and stability issues.Herein,we introduced europium ions(Eu^(3+))into Mn^(2+):CsPbCl_(3)NCs via the thermal injection synthesis method to obtain high performance Eu^(3+)and Mn^(2+)codoped CsPbCl_(3)(Eu^(3+)/Mn^(2+):CsPbCl_(3)) NCs.The maximum PL QY of the resulting Eu^(3+)/Mn^(2+):CsPbCl_(3)NCs reaches up to 90.92%.It is found that the doping of Eu^(3+)ions significantly reduces the non-radiative recombination caused by high defect states,and improves the energy transfer efficiency from exciton to Mn^(2+),thereby boosting the PL performance.Moreover,doping Eu^(3+)ions notably improves the UV-light and water stability of Mn^(2+):CsPbCl_(3)NCs.We further demonstrate the application versatility of Eu^(3+)/Mn^(2+):CsPbCl_(3)NCs in white light emitting diodes(WLEDs) and optical anticounterfeiting applications.This work provides a valuable perspective for the attainment of high performance Mn^(2+):CsPbCl_(3)NCs and lays a foundation for the codoping of other lanthanide ions to adjust the luminescence properties of Mn^(2+):CsPbCl_(3)NCs.
基金supported the National Science Foundation of China(Nos.22362011,22169007,51804199)the Science and Technology Major Project of Guangxi(No.AA19046001)+2 种基金the Open Research Fund of Guangxi Key Laboratory of Electrochemical and Magnetochemical Functional Materials(Nos.EMFM20201105,EMFM20181119)Shenzhen Medical Research Fund(No.20231211121324001)Shenzhen Science and Technology Program(No.KQTD20180412181422399)。
文摘The ultra-high nickel cathode material has important application prospect in power lithium-ion batteries.However,the poor structural stability and serious surface/interfacial side reactions during long cycles severely hinder the material's practical application.In this paper,Cs^(+)doping and polymethyl methacrylate(PMMA)coating are used to synergistically modify the NCM955 material.The results show that the corresponding discharge specific capacity of NCMCs-2@P-2 material reaches 152.02 m Ah/g at 1 C(1 C=200 m A/g)and 125.66 m Ah/g at 5 C after 300 cycles,and the capacity retention is 78.11%and72.21%,respectively.In addition,it still maintains 156.36 m Ah/g discharge specific capacity at 10 C,and these rate and cycle properties exceed those reported on ultra-high nickel cathode material.Moreover,NCMCs-2@P-2 material has higher migration energy barrier of Ni^(2+)and lower migration energy barrier of Li+than that of NCM955 material.Therefore,NCMCs-2@P-2 material has excellent electrochemical properties,which has been proved by a series of structural characterization,theoretical calculation and performance test.The synergistic enhancement of Cs^(+)doping and PMMA coating accelerates lithium ion diffusion kinetics,stabilizes crystal structure,and inhabits surface/interface side reaction.
文摘Cerium oxide is an earth-abundant,highly researched multifunctional oxide with great technological importance and wide applications area.Trivalent rare earth(RE^(3+))dopants modify the defects concentration,create plenty of Ce^(3+)■Ce^(4+)redox centres and generate numerous oxygen vacancies than the pure ceria.In the present work,CeO_(2)(CE),10 mol%Gd doped ceria(Ce_(0.9)Gd_(0.1)O_(2-δ);CGO),and 10 mol%Sm doped ceria(Ce_(0.9)Sm_(0.1)O_(2-δ);CSO)were synthesized by sol-gel auto-combustion method.The phase formation,particle morphology,and elemental distribution of the synthesized powder samples were studied by X-ray diffraction,Fourier transform infrared spectroscopy,field emission scanning electron microscopy,and energy dispersive X-ray analysis.UV-diffuse reflectance spectroscopy was used to study the optical properties of the material.The band gaps of the CE,CSO and CGO were calculated to be2.81,2.71 and 2.60 eV,respectively.Electrochemical impedance spectroscopy(EIS)at room temperature(RT)investigated the materials'electrical properties.The improved electrical conductivity was registered for the doped variants.CGO reaches the highest one(0.4×10^(-7)S/cm)at RT.Cyclic voltammetry(CV)was performed to study the oxidation-reduction behavior and reversibility of the ion intercalation-deintercalation process of the materials in an electrolyte solution.For the doped ceria,a threefold improved current density is observed for the cathodic part,while a small improvement is reflected in the anodic part.Specific capacitance(C_(sp))was calculated at the Faradaic and non-Faradaic region of the voltammograms.C_(sp)of the materials increases in the order of CE<<CSO<CGO.The highest Csp 345.16 F/g at a scan rate of 5 mV/s is obtained for the CGO.Lastly,a correlation is drawn by analysing cyclic voltammograms to conclude the applicability of the doped ceria material for roomtemperature water-electrolysis in the alkaline medium.
基金National Key R&D Program of China(2023YFB3506600)。
文摘Y_(3)Al_(2)Ga_(3)O_(12):Ce^(3+),Cr^(3+)(YAGG:Ce^(3+),Cr^(3+)),as a persistent luminescent material,has advantages of high initial luminescence intensity and long persistent time,which is promising in persistent luminescent material applications.At present,YAGG:Ce^(3+),Cr^(3+)powders exhibit good persistent performance,but their persistent performance of ceramics still needs to be further improved to meet the new requirements.In this work,(Y_(0.998)Ce_(0.002))_(3)(Al_(1-x)Cr_(x))_(2)Ga_(3)O_(12) ceramics with different Cr^(3+)doping concentrations were prepared by solid-state reaction,including air pre-sintering,hot isostatic pressing(HIP)post-treatment and air annealing,to investigate the effects of Cr^(3+)doping concentration on the microstructure,optical properties and persistent performance of the ceramics.The results showed that as the doping concentration of Cr^(3+)increased from 0.025%to 0.2%(in atom),no significant effect of Cr^(3+)concentration on the morphology of pre-sintered ceramics or HIP post-treatment ceramics was observed,but the in-line transmittance gradually increased while the persistent performance gradually decreased.Among them,YAGG:Ce^(3+),Cr^(3+)ceramics doped with 0.025%Cr^(3+)showed the strongest initial luminescence intensity exceeding 6055 mcd/m^(2) and a persistent time of 1030 min after air pre-sintering combined with HIP post-treatment and air annealing.By optimizing the Cr^(3+)doping concentration and the fabrication process,the persistent luminescence(PersL)performance of the YAGG:Ce^(3+),Cr^(3+)ceramics was obviously improved.
基金supported by the National Natural Science Foundation of China(Grant No.12204482),the Natural Science Foundation of Shanxi Province(Grant No.202403021221164)Higher education teaching reform and innovation project of Shanxi Province(Grant No.J20220480)the Natural Science Foundation of Hainan Province(Grant Nos.525MS080 and 225MS076).
文摘Lead-free halide double perovskites(HDPs)provide a promising platform for high-performance thermoelectric due to their intrinsically ultralow lattice thermal conductivity k_(l).In this study,we comprehensively investigate the lattice dynamics of Cs_(2)AgInCl_(6)using first-principles calculations.By explicitly incorporating four-phonon scattering and wave-like phonon tunneling,we predict a k_(l)of 0.52 W·m^(-1)·K^(-1)with a remarkably weak temperature dependence(k_(l)∝T^(-0.31)),confirming the intrinsically glass-like ultralow k_(l)in Cs_(2)AgInCl_(6).Further analyses reveal that hierarchical chemical bonds,loosely bonded rattling atoms and a mixed crystalline-liquid state collectively induce strong anharmonicity manifested in flat phonon modes.These factors dominate the glass-like thermal transport component of k_(l).This work uncovers the underlying mechanisms governing the unusual thermal transport properties in lead-free HDPs and offers guiding principles for designing novel energy conversion technologies.
文摘This paper presents a newly designed ultra-thin, lead-free, and all-inorganic solar cell structure. The structure was optimized using the SCAPS-1D simulator, incorporating solid-state layers arranged as n-graphene/CsSnGeI<sub>3</sub>/p-graphene. The objective was to investigate the potential of utilizing n-graphene as the electron transport layer and p-graphene as the hole transport layer to achieve maximum power conversion efficiency. Various materials for the electron transport layer were evaluated. The optimized cell structure achieved a maximum power conversion efficiency of 20.97%. The proposed solar cell structure demonstrates promising potential as an efficient, inorganic photovoltaic device. These findings provide important insights for developing and optimizing inorganic photovoltaic cells based on CsSnGeI<sub>3</sub>, with n-graphene electron transport layers and p-graphene hole transport layers.
文摘The ceramics with Pb1.04Zr0.52Ti0.48O3 ＋ z wt.% Cr2O3 were prepared using the traditional technique. The effects of Cr2O3 doping on the phase structure, the microstructure, and the electrical properties of ceramics were investigated. Meanwhile, the temperature stabilities of the resonant frequency （fx） were studied. The results showed that the △fr/fr,25℃ decreased with the addition of 0.2 wt.% - 0.8 wt.% Cr2O3 as compared with the undoped samples. The minimum value （-0.182%） of △fr/fr,25℃ was obtained for z = 0.6 wt.% Cr2O3 samples that sintered at 1260℃. The values of ε^τ33/ε0 = 1650, tanδ = 0.006, d33 = 328 pC/N, Kp = 0.63, Qm = 2300 were obtained when Cr2O3 was 0.6 wt.%, which exhibited more excellent piezoelectric properties than other compositions such as those with z = 0.2 wt.%, 0.4 wt.%, and 0.8 wt.%, but had a similar value as compared with the tmdoped samples. When the Cr2O3 additive increased, the Curie temperature moved toward low temperature and the changes of resonant frequency changed from positive to negative with increasing temperature.
基金financially supported by the National Natural Science Foundation of China(Nos.61604119,61704131,and 61804111)Initiative Postdocs Supporting Program(No.BX20180234)+2 种基金China Postdoctoral Science Foundation(No.2018M643578)Young Elite Scientists Sponsorship Program by CAST(2016QNRC001)Fundamental Research Funds for the Central Universities.
文摘Interface engineering has been regarded as an effective and noninvasive means to optimize the performance of perovskite solar cells(PSCs).Here,doping engineering of a ZnO electron transport layer(ETL)and CsPbI3/ZnO interface engineering via introduction of an interfacial layer are employed to improve the performances of CsPbI3-based PSCs.The results show that when introducing a TiO2 buffer layer while increasing the ZnO layer doping concentration,the open-circuit voltage,power conversion efficiency,and fill factor of the CsPbI3-based PSCs can be improved to 1.31 V,21.06%,and 74.07%,respectively,which are superior to those of PSCs only modified by the TiO2 buffer layer or high-concentration doping of ZnO layer.On the one hand,the buffer layer relieves the band bending and structural disorder of CsPbI3.On the other hand,the increased doping concentration of the ZnO layer improves the conductivity of the TiO2/ZnO bilayer ETL because of the strong interaction between the TiO2 and ZnO layers.However,such phenomena are not observed for those of a PCBM/ZnO bilayer ETL because of the weak interlayer interaction of the PCBM/ZnO interface.These results provide a comprehensive understanding of the CsPbI3/ZnO interface and suggest a guideline to design high-performance PSCs.
文摘0.144（K0.5Bi0.5）TiO3-0.85（Na0.5Bi0.5）TiO3-0.006BaTiO3（KBT-NBT-BT） lead-free piezoelectric ceramics were prepared using a conventional solid state method.The influence of Sb2O3 doping on the crystal phase,surface microstructure and properties of the KBT-NBT-BT lead-free piezoelectric ceramics were investigated using X-ray diffraction（XRD）,scanning electron microscope（SEM） and other analytical methods.The results show that all compositions are of pure perovskite structure solid states.Sb2O3 doping does not influence the microstructure of KBT-NBT-BT lead-free piezoelectric ceramics obviously in the Sb2O3 doping range of 0.1-0.5 wt.%.Sb2O3 functions as a donor when doped small amount,while functions as a acceptor when doped large amount.The piezoelectric strain constant（d33） increases first and then decreases;the dielectric constant（ε33^T/ε0） and the dielectric loss（tanδ） decrease continuously when the amount of Sb2O3 dopant increases.When the doping amount of Sb2O3 is 0.1 wt.%,the KBT-NBT-BT piezoelectric ceramics with good comprehensive properties are obtained,whose d33,ε33^T/ε0 and tanδ are 147 pC/N,1510 and 4.2%,respectively.
基金supported by Project of Combination of Producing,Learning and Studying of Guangdong Province and Education Department(2011B090400027)
文摘Ba0.85Ca0.15Ti0.9Zr0.1O3 （BCTZ） lead-free piezoelectric ceramics co-doped with CeO2 （x=0.1 wt.%, 0.2 wt.%, 0.3 wt.%, 0.4 wt.%, 0.5 wt.%） and Li2CO3 （0.6 wt.%） were prepared by conventional solid-state reaction method. Influence of CeO2 doping amount on the piezoelectric properties, dielectric properties, phase composition and microstructure of prepared BCTZ lead-free piezoelectric ceramics doped with Li2CO3 were investigated by X-ray diffraction （XRD） and scanning electron microscopy （SEM） and other analytical methods. The results showed that the sintered temperature of BCTZ lead-free piezoelectric ceramics doped with CeO2 decreased greatly when Li2CO3 doping amount was 0.6 wt.%;a pure perovskite structure of BCTZ lead-free piezoelectric ceramics co-doped with Li2CO3 and CeO2 and sintered at 1050 ℃ could also be obtained. The piezoelectric constant （d33）, the relative permit-tivity （εr） and the planar electromechanical coupling factor （kp） of BCTZ ceramics doped with Li2CO3 increased firstly and then de-creased, the dielectric loss （tanδ） decreased firstly and then increased and decreased at last when CeO2 doping amount increased. The influence of CeO2 doping on the properties of BCTZ lead-free piezoelectric ceramics doped with Li2CO3 were caused by“soft effect”and “hard effect”piezoelectric additive and causing lattice distortion. When CeO2 doping amount （x） was 0.2 wt.%, the BCTZ ceramics doped with Li2CO3 （0.6 wt.%） and sintered at 1050 ℃ possessed the best piezoelectric property and dielectric property with d33 of 436 pC/N, kp of 48.3%,εr of 3650, tanδof 1.5%.
基金supported by the National Natural Science Foundation of China(51702024)Sci-Tech Support Plan-Social Development of Changzhou City(CE20175041)the Priority Academic Program Development of Jiangsu Higher Education Institutions(15KJA43002)
文摘The Ba（0.96）Ca（0.04）Ti（0.90）Sn（0.10）O3-xNd2 O3（x = 0-0.08%） ceramics were prepared via traditional solid-state sintering method. The influences of Nd3＋ substitution on the phase structure, dielectric properties,piezoelectric and ferroelectric properties of the ceramics were investigated. All the samples possess pure BaTiO3-type perovskite structure. MPB with orthorhombic and tetragonal phase coexist at around x = 0.03-0.04. Nd^（3＋） doping decreases both Tc and T（O-T） to lower temperature. All the samples exhibit an intermediate state with the coexistence of ferroelectric and diffuse relaxor ferroelectric behavior with the addition of Nd^（3＋）. The electric properties of the ceramics were optimized at x = 0.03 with d33, Kp, εr and Pr values of 545 pC/N, 51.9%, 24,412 and 10.74 μC/cm^2.
文摘Quinary system piezoelectric ceramics PSN-PZN-PMS-PZT were prepared by using a two-step method. The effects of CeO2 doping on piezoelectric and dielectric properties of the system were investigated at morphotropic phase boundary （MPB）. The results reveal that the relative dielectric constant ε33^T｜ε0, the Curie temperature To, the piezoelectric constant d33, the mechanical quality factor Qm, and the electromechanical coupling coefficient Kp are changed with the increase of CeO2 content. On the other hand, the effects of CeO2 doping on the dielectric properties of PSN-PZN-PMS-PZT piezoelectric ceramics at high electric field are consistent with the change at weak electric field. The values of dielectric constant and dielectric loss are enhanced with the increasing of electric field.
基金supported by Danish National Research Foundation(#DNRF133)(to AN)。
文摘The formation of the mammalian nervous system and its maturation into sensory,motor,cognitive,and behavioral circuits is a complex process that begins during early embryogenesis and lasts until young adulthood.Impaired neurodevelopment can result in various neurological and psychiatric conditions,jointly named neurodevelopmental disorders(NDDs).
