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Direct Observation of Large Altermagnetic Splitting in CrSb(100)Thin Film
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作者 Sen Liao Xianglin Li +9 位作者 Xiuhua Chen Ziyan Yu Jianghao Yao Rui Xu Jiexiong Sun Zhengtai Liu Dawei Shen Yilin Wang Donglai Feng Juan Jiang 《Chinese Physics Letters》 2025年第6期285-290,共6页
Altermagnets represent a newly discovered class of magnetically ordered materials.Among all the candidates,CrSb stands out due to its largest spin splitting energy and highest Néel temperature exceeding 700 K,mak... Altermagnets represent a newly discovered class of magnetically ordered materials.Among all the candidates,CrSb stands out due to its largest spin splitting energy and highest Néel temperature exceeding 700 K,making it promising for room-temperature spintronic applications.Here we have successfully grown high quality CrSb(100)thin film on GaAs(110)substrate by molecular beam epitaxy.Using angle-resolved photoemission spectroscopy,we successfully obtained the three-dimensional electronic structure of the thin film.Moreover,we observed the emergence of the altermagnetic splitting bands corresponding to the calculated results along the low symmetry pathsT-QandP-D.The bands near the Fermi level are only spin splitting bands along theP-Ddirection,with splitting energy reaching as high as 910 meV.This finding provides insights into the magnetic properties of CrSb thin films and paves the way for further studies on their electronic structure and potential applications in spintronics. 展开更多
关键词 crsb thin film molecular beam epitaxyusing magnetic properties angle resolved photoemission spectroscopy electronic structure spin splitting bands large altermagnetic splitting magnetically ordered materialsamong
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Sn和Te掺杂对CrSb_2热电性能的不同影响
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作者 李海金 张清 +1 位作者 刘义 孙文斌 《材料研究学报》 EI CAS CSCD 北大核心 2010年第4期429-433,共5页
研究了Sn、Te掺杂对CrSb_2热电性能的不同影响。结果表明,Sn、Te掺杂引起的晶格畸变使电子浓度提高,Te替代Sb是n-型掺杂,而Sn替代Sb是p-型掺杂。由于补偿效应,CrSb_(1.99)Sn_(0.01)的电子浓度小于CrSb_(1.99)Te_(0.01)的电子浓度,导致S... 研究了Sn、Te掺杂对CrSb_2热电性能的不同影响。结果表明,Sn、Te掺杂引起的晶格畸变使电子浓度提高,Te替代Sb是n-型掺杂,而Sn替代Sb是p-型掺杂。由于补偿效应,CrSb_(1.99)Sn_(0.01)的电子浓度小于CrSb_(1.99)Te_(0.01)的电子浓度,导致Sn掺杂使CrSb_2的电阻率和热电势|S|降低的幅度较小。掺杂后声子杂质(Sn、Te)散射增强,CrSb_(1.99)Sn_(0.01)和CrSb_(1.99)Te_(0.01)的热导率都明显减小,而Te的原子量比Sn的大,散射作用更强,热导率减小的幅度更加明显。因此,Te掺杂改善了CrSb_2的热电性能,而Sn掺杂没有改善其性能。此外,由于Sn和Te的d轨道填满了电子而没有磁性,掺杂后样品的Neel温度没有明显改变. 展开更多
关键词 材料科学基础学科 crsb2 电阻率 热电势 热导率
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Elastic and optical properties of zinc-blende CrSb and its effective mass
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作者 Sahar Rezaee Arash Boochani +3 位作者 Masoud Majidiyan Atefeh Ghaderi Shahram Solaymani Mosayeb Naseri 《Rare Metals》 SCIE EI CAS CSCD 2014年第5期615-621,共7页
The elastic, optical, and effective mass properties of CrSb in zinc-blende(ZB) phase were investigated.The calculations were carried out using the full-potential linearized augmented plane wave plus local orbital ac... The elastic, optical, and effective mass properties of CrSb in zinc-blende(ZB) phase were investigated.The calculations were carried out using the full-potential linearized augmented plane wave plus local orbital according to the density functional theory. The results of elastic calculations by generalized gradient approximation and local density approximation approximations indicate that ZB CrSb is a ductile material and its Debye temperature is rather low. Band structure and density of state calculations introduce the ZB CrSb as a half-metal with spin polarization of100 %. In metal state, 16 th and 17 th bands cut off the Fermi level. Calculations study the effective mass, Fermi velocity,and Fermi surface at 16 th and 17 th bands. In continue,optical quantities such as dielectric function, energy loss function, and optical conductivity were investigated. 展开更多
关键词 HALF-METAL crsb Elastic properties Optical properties
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Physical Properties of CrSb/InP(001): Effect of Interface in Half-Metallic
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作者 Arash Boochani Shahram Solymani +3 位作者 Sahar Rezaee Negin Beryani Nezafat Sara Fakhrai Tadayon Amin Aminian 《World Journal of Nano Science and Engineering》 2013年第3期79-86,共8页
In this study, density functional theory in improved flat waves’ framework has been used. First of all, characterization, elastic and half-metallic properties of the CrSb-ZB compound at (GGA & LDA) and GGA + U ap... In this study, density functional theory in improved flat waves’ framework has been used. First of all, characterization, elastic and half-metallic properties of the CrSb-ZB compound at (GGA & LDA) and GGA + U approximation are calculated. The elastic calculations indicate that the CrSb-ZB is a ductile material. However, the calculation of Deby temperature indicates that the CrSb-ZB is meta-stable. The half-metallicity character is also preserved at CrSb/InP (001) interface by GGA + U. The conduction band minimum (CBM) of CrSb in the minority spin case lies about 1.26 eV above that of GaSb, suggesting that the major spin can be injected into GaSb without being flipped to the conduction bands of the minor spin. 展开更多
关键词 SPINTRONIC INTERFACE crsb-Inp Density FUNCTIONAL Theory GGA + U
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Tunneling Magnetoresistance Effect in Altermagnetic Tunnel Junctions with g-Wave Splitting
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作者 Xinlu Li Meng Zhu +3 位作者 Jianting Dong Kun Wu Fanxing Zheng Jia Zhang 《Chinese Physics Letters》 2025年第10期144-165,共22页
Altermagnets,a class of unconventional antiferromagnets with non-relativistic spin-splitting,offer promising potential for antiferromagnetic spintronic devices.While many altermagnets are limited by either low magneti... Altermagnets,a class of unconventional antiferromagnets with non-relativistic spin-splitting,offer promising potential for antiferromagnetic spintronic devices.While many altermagnets are limited by either low magnetic transition temperatures or weak spin splitting,the recently discovered metal CrSb,with high N′eel temperature(T_(N)=710 K)and significant spin-splitting due to its unique spin space group,provides a robust platform for remarkable tunneling magnetoresistance(TMR)in collinear all-antiferromagnetic tunnel junctions(AATJs).This study systematically investigates the spin-polarized Fermi surface of CrSb and spin-dependent electron transport in CrSb-based AATJs.The CrSb/β-InSe/CrSb junction with a three-monolayer InSe barrier exhibits a TMR ratio of approximately 290%,with energy-dependent analysis revealing TMR ratios that may exceed 850%when considering the shift of the Fermi energy.We also demonstrate the angle-dependent TMR of CrSb-based AATJs by adjusting N′eel vector orientations.Our findings might provide strong theoretical support for CrSb as a versatile building block for all-antiferromagnetic memory devices. 展开更多
关键词 G wave splitting antiferromagnetic spintronic deviceswhile tunneling magnetoresistance tmr Alt magnets low magnetic transition temperatures spin splittingthe tunneling magnetoresistance crsb
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