A simple semi-empirical model for radiative and Auger recombination constants is suggested,accounting for hole localization by composition fluctuations in InGaN alloys.Strengthening of fluctuation with the indium mola...A simple semi-empirical model for radiative and Auger recombination constants is suggested,accounting for hole localization by composition fluctuations in InGaN alloys.Strengthening of fluctuation with the indium molar fraction in InGaN is found to be largely responsible for decreases in both the radiative and Auger recombination constants with emission wavelength.The model provides good fitting of the experimental spectral dependencies of the recombination constants,thus demonstrating implication of the carrier localization to light-emitting diode efficiency reduction in the"green gap."展开更多
1.Introduction Multi-principal element alloys(MPEAs),with compositions in the central region of the multicomponent phase diagram,have been dubbed"high-entropy alloys"(HEAs)in recent years[1-11].A more genera...1.Introduction Multi-principal element alloys(MPEAs),with compositions in the central region of the multicomponent phase diagram,have been dubbed"high-entropy alloys"(HEAs)in recent years[1-11].A more general term currently accepted by the community for these MPEAs is complex concentrated alloys or compositionally complex alloys(CCAs)[12].These alloys are usually based on single-phase multi-principal element solid solutions,with no need or possibility to distinguish which species constitutes the solvent and which ones are solutes.This Viewpoint and Perspective article focuses on a salient feature in the internal structure of MPEAs,different from traditional metals and solvent-(dilute)solute solutions.Specifically,the unusual trait to be highlighted for these heavily concentrated solutions is their inherent chemical inhomogeneity on the nanoscale,in terms of the high propensity for compositional fluctuation and local chemical order.展开更多
High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarif...High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practic al applic ations.In this work,strain-balanced and high-quality In As/In_(x)Ga_(1-x)As_(y)Sb_(1-y)superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully.Superlattices grown on In As substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'results.Moreover,the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious.In addition,the optical properties of superlattices grown on different substrates are discussed systematically.Because of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates,the superlattices grown on In As substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission.Finally,the thermal quenching of emission intensity indicates that the superlattices grown on the In As substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.展开更多
Multi-principal element solid solutions are prone to develop local chemical inhomogeneities,i.e.,chemi-cal order/clustering and/or compositional undulation.However,these structural details from short-range(first coupl...Multi-principal element solid solutions are prone to develop local chemical inhomogeneities,i.e.,chemi-cal order/clustering and/or compositional undulation.However,these structural details from short-range(first couple of nearest-neighbor atomic shells)to nanometer length scale are very challenging to re-solve in both experimental characterization and computer simulations.For instance,Monte Carlo model-ing based on density-functional-theory calculations is severely limited by the sample size and the sim-ulation steps practical in the simulations.Adopting the cluster expansion approach,here we systemati-cally reveal the local chemical inhomogeneity,including chemical order and compositional fluctuation,in three representative equiatomic TiZrNb-based body-centered cubic refractory high-entropy alloys(HEAs):TiZrNb,TiZrHfNb and TiZrHfNbTa.Ti-Zr pairs are found to exhibit the highest degree of chemical pref-erence among all atomic pairs.Such chemical short-range order(CSRO)induces an accompanying com-positional undulation,both extending to characteristic dimensions of the order of one nanometer.The chemical inhomogeneity trend uncovered for this series of TiZrNb-based HEAs is expected to impact their mechanical properties;e.g.,incorporating the CSRO effects in a current model significantly improves its agreement with experimental measured yield strength.展开更多
Fe_(72.4)Co_(13.9)Cr_(10.4)Mn_(2.7)B_(0.34)high entropy steel was prepared by magnetron sputtering.The alloy exhibits a high yield strength of 2.92±0.36 GPa while achieving appreciable plasticity of 13.7±1.9...Fe_(72.4)Co_(13.9)Cr_(10.4)Mn_(2.7)B_(0.34)high entropy steel was prepared by magnetron sputtering.The alloy exhibits a high yield strength of 2.92±0.36 GPa while achieving appreciable plasticity of 13.7±1.9%at the ultimate compressive strength(3.37±0.36 GPa).The distribution of iron and chromium shows an un-usual,characteristic spinodal-like pattern at the nanometer scale,where compositions of Fe and Cr show strong anticorrelation and vary by as much as 20 at.%.The high strength is largely attributable to the compositional modulations,combined with fine grains with body-centered cubic(BCC)crystal structure,as well as grain boundary segregation of interstitial boron.The impressive plasticity is accommodated by the formation and operation of multiplanar,multicharacter dislocation slips,mediated by coherent in-terfaces,and controlled by shear bandings.The excellent strength-ductility combination is thus enabled by a range of distinctive strengthening mechanisms,rendering the new alloy a potential candidate for safety-critical,load-bearing structural applications.展开更多
基金European Union Seventh Framework Programme(FP7)(318388)
文摘A simple semi-empirical model for radiative and Auger recombination constants is suggested,accounting for hole localization by composition fluctuations in InGaN alloys.Strengthening of fluctuation with the indium molar fraction in InGaN is found to be largely responsible for decreases in both the radiative and Auger recombination constants with emission wavelength.The model provides good fitting of the experimental spectral dependencies of the recombination constants,thus demonstrating implication of the carrier localization to light-emitting diode efficiency reduction in the"green gap."
基金supported by the National Natural Science Foundation of China(Grant No.52231001)Evan Ma and Jun Ding also acknowledge XJTU for hosting their research at the Center for Alloy Innovation and Design(CAID).
文摘1.Introduction Multi-principal element alloys(MPEAs),with compositions in the central region of the multicomponent phase diagram,have been dubbed"high-entropy alloys"(HEAs)in recent years[1-11].A more general term currently accepted by the community for these MPEAs is complex concentrated alloys or compositionally complex alloys(CCAs)[12].These alloys are usually based on single-phase multi-principal element solid solutions,with no need or possibility to distinguish which species constitutes the solvent and which ones are solutes.This Viewpoint and Perspective article focuses on a salient feature in the internal structure of MPEAs,different from traditional metals and solvent-(dilute)solute solutions.Specifically,the unusual trait to be highlighted for these heavily concentrated solutions is their inherent chemical inhomogeneity on the nanoscale,in terms of the high propensity for compositional fluctuation and local chemical order.
基金financially supported by the National Natural Science Foundation of China(Nos.62074018,62174015 and 62275032)the Developing Project of Science and Technology of Jilin Province(No.20210509061RQ)+3 种基金the Natural Science Foundation of Jilin Province(No.20210101473JC)National Key R&D Program of China(No.2021YFB3201901)The Natural Science Foundation of Chongqing China(No.cstc2021jcyjmsxmX1060)supported by R&D project of Collighter Co.,Ltd。
文摘High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practic al applic ations.In this work,strain-balanced and high-quality In As/In_(x)Ga_(1-x)As_(y)Sb_(1-y)superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully.Superlattices grown on In As substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'results.Moreover,the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious.In addition,the optical properties of superlattices grown on different substrates are discussed systematically.Because of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates,the superlattices grown on In As substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission.Finally,the thermal quenching of emission intensity indicates that the superlattices grown on the In As substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.
基金J.D.and E.M.acknowledge XJTU for hosting their research at the Center for Alloy Innovation and Design(CAID).This work was funded by the Natural Science Foundation of China(No.12004294)National Youth Talents Program and the HPC platform of Xi’an Jiaotong University。
文摘Multi-principal element solid solutions are prone to develop local chemical inhomogeneities,i.e.,chemi-cal order/clustering and/or compositional undulation.However,these structural details from short-range(first couple of nearest-neighbor atomic shells)to nanometer length scale are very challenging to re-solve in both experimental characterization and computer simulations.For instance,Monte Carlo model-ing based on density-functional-theory calculations is severely limited by the sample size and the sim-ulation steps practical in the simulations.Adopting the cluster expansion approach,here we systemati-cally reveal the local chemical inhomogeneity,including chemical order and compositional fluctuation,in three representative equiatomic TiZrNb-based body-centered cubic refractory high-entropy alloys(HEAs):TiZrNb,TiZrHfNb and TiZrHfNbTa.Ti-Zr pairs are found to exhibit the highest degree of chemical pref-erence among all atomic pairs.Such chemical short-range order(CSRO)induces an accompanying com-positional undulation,both extending to characteristic dimensions of the order of one nanometer.The chemical inhomogeneity trend uncovered for this series of TiZrNb-based HEAs is expected to impact their mechanical properties;e.g.,incorporating the CSRO effects in a current model significantly improves its agreement with experimental measured yield strength.
基金supported by an Australian Research Council Discovery Project(Grant No.DP160104632)an Aus-tralian Government Research Training Program Scholarship.Y.J.Chen acknowledges the support provided by the Australian Re-search Council(Grant No.DE210101773).
文摘Fe_(72.4)Co_(13.9)Cr_(10.4)Mn_(2.7)B_(0.34)high entropy steel was prepared by magnetron sputtering.The alloy exhibits a high yield strength of 2.92±0.36 GPa while achieving appreciable plasticity of 13.7±1.9%at the ultimate compressive strength(3.37±0.36 GPa).The distribution of iron and chromium shows an un-usual,characteristic spinodal-like pattern at the nanometer scale,where compositions of Fe and Cr show strong anticorrelation and vary by as much as 20 at.%.The high strength is largely attributable to the compositional modulations,combined with fine grains with body-centered cubic(BCC)crystal structure,as well as grain boundary segregation of interstitial boron.The impressive plasticity is accommodated by the formation and operation of multiplanar,multicharacter dislocation slips,mediated by coherent in-terfaces,and controlled by shear bandings.The excellent strength-ductility combination is thus enabled by a range of distinctive strengthening mechanisms,rendering the new alloy a potential candidate for safety-critical,load-bearing structural applications.
