High-temperature piezoelectric ceramics are critical for aerospace and other advanced applications,yet achieving high sensitivity and stability under elevated temperatures remains challenging.In this study,we employ a...High-temperature piezoelectric ceramics are critical for aerospace and other advanced applications,yet achieving high sensitivity and stability under elevated temperatures remains challenging.In this study,we employ a multi-element co-doping strategy combined with domain engineering to significantly enhance the piezoelectric performance and Curie temperature of Bi_(4)Ti_(3)O_(12)(BIT)-based ceramics.Using a solid-state reaction method,W^(6+)/Nb^(5+)/Ta^(5+)/Sb^(3+)non-equivalently co-doped BIT ceramics were synthesized,achieving a high piezoelectric coefficient(d33)of 35 pC N^(-1),an elevated Curie temperature of 687℃,and an increased resistivity of 2.9×10^(6)Ωcm at an optimal doping level of x=0.02.This study further reveals the impact of poling conditions on domain structure,providing new insights for enhancing piezoelectric properties through domain configuration.A second high-voltage,short-duration poling process promotes the formation of large domains,underscoring the role of domain rearrangement in augmenting piezoelectric activity.This work demonstrates the potential of BIT-based ceramics in hightemperature sensing and precision actuation applications,presenting a novel strategy for designing high-performance piezoelectric materials for extreme environments.展开更多
基金financially supported by the National Natural Science Foundation of China(No.52172135)the Youth Top Talent Project of the National Special Support Program(No.2021-527-07)+1 种基金the Leading Talent Project of the National Special Support Program(No.2022WRLJ003)Guangdong Basic and Applied Basic Research Foundation for Distinguished Young Scholars(Nos.2022B1515020070 and 2021B1515020083)
文摘High-temperature piezoelectric ceramics are critical for aerospace and other advanced applications,yet achieving high sensitivity and stability under elevated temperatures remains challenging.In this study,we employ a multi-element co-doping strategy combined with domain engineering to significantly enhance the piezoelectric performance and Curie temperature of Bi_(4)Ti_(3)O_(12)(BIT)-based ceramics.Using a solid-state reaction method,W^(6+)/Nb^(5+)/Ta^(5+)/Sb^(3+)non-equivalently co-doped BIT ceramics were synthesized,achieving a high piezoelectric coefficient(d33)of 35 pC N^(-1),an elevated Curie temperature of 687℃,and an increased resistivity of 2.9×10^(6)Ωcm at an optimal doping level of x=0.02.This study further reveals the impact of poling conditions on domain structure,providing new insights for enhancing piezoelectric properties through domain configuration.A second high-voltage,short-duration poling process promotes the formation of large domains,underscoring the role of domain rearrangement in augmenting piezoelectric activity.This work demonstrates the potential of BIT-based ceramics in hightemperature sensing and precision actuation applications,presenting a novel strategy for designing high-performance piezoelectric materials for extreme environments.
