Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and...Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and subsequently annealed at 550℃ （sample I） exhibits a pseudo-epitaxial growth with partially ordered L21 phase. Sample I shows a four-fold magnetic anisotropy, in addition to a relatively weak uniaxial anisotropy. The Gilbert damping factor of sample I is smaller than 0.001, much smaller than reported ones. The possible reasons responsible for the small Gilbert damping factor are discussed, including weak spin-orbit coupling, small density of states at Fermi level, and so on.展开更多
The low Gilbert damping factor, which is usually measured by ferromagnetic resonance, is crucial in spintronic applications. Two-magnon scattering occurs when the orthogonMity of the ferromagnetic resonance mode and o...The low Gilbert damping factor, which is usually measured by ferromagnetic resonance, is crucial in spintronic applications. Two-magnon scattering occurs when the orthogonMity of the ferromagnetic resonance mode and other degenerate spin wave modes was broken by magnetic anisotropy, voids, second phase, surface defects, etc., which is important in analysis of ferromagnetic resonance linewidth. Direct fitting to linewidth with Gilbert damping is advisable only when the measured linewidth is a linear function of measuring frequency in a broad band measurement. We observe the nonlinear ferromagnetic resonance linewidth of Co2MnSi thin films with respect to measuring frequency in broad band measurement. Experimental data could be well fitted with the model including two-magnon scattering with no fixed parameters. The fitting results show that two-magnon scattering results in the nonlinear linewidth behavior, and the Gilbert damping factor is much smaller than reported ones, indicating that our Co2MnSi films are more suitable for the applications of spin transfer torque.展开更多
We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium（Ge） channel modulates the Schottky barrier height and the resistance–area product of the spin diode. W...We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium（Ge） channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height（SBH） occurs following the insertion of the graphene layer between Co_2MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore,the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2015CB921502the National Natural Science Foundation of China under Grant Nos 11474184 and 11174183+3 种基金the 111 Project under Grant No B13029the Natural Science Foundation of Shandong Province under Grant No JQ201201the Doctorate Foundation of Shandong Province under Grant No BS2013CL042the Young Scientists Fund of the National Natural Science Foundation of China under Grant No 11204164
文摘Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and subsequently annealed at 550℃ （sample I） exhibits a pseudo-epitaxial growth with partially ordered L21 phase. Sample I shows a four-fold magnetic anisotropy, in addition to a relatively weak uniaxial anisotropy. The Gilbert damping factor of sample I is smaller than 0.001, much smaller than reported ones. The possible reasons responsible for the small Gilbert damping factor are discussed, including weak spin-orbit coupling, small density of states at Fermi level, and so on.
基金Supported by the National Basic Research Program of China under Grant No 2015CB921502the National Natural Science Foundation of China under Grant Nos 11474184 and 11174183+4 种基金the Program for New Century Excellent Talents of China under Grant No NCET-10-0541the Scientific Research Foundation for Returned Overseas Chinese Scholars under Grant No B13029the Natural Science Foundation of Shandong Province under Grant No JQ201201the Doctorate Foundation of Shandong Province under Grant No BS2013CL042the Young Scientists Fund of the National Natural Science Foundation of China under Grant No 11204164
文摘The low Gilbert damping factor, which is usually measured by ferromagnetic resonance, is crucial in spintronic applications. Two-magnon scattering occurs when the orthogonMity of the ferromagnetic resonance mode and other degenerate spin wave modes was broken by magnetic anisotropy, voids, second phase, surface defects, etc., which is important in analysis of ferromagnetic resonance linewidth. Direct fitting to linewidth with Gilbert damping is advisable only when the measured linewidth is a linear function of measuring frequency in a broad band measurement. We observe the nonlinear ferromagnetic resonance linewidth of Co2MnSi thin films with respect to measuring frequency in broad band measurement. Experimental data could be well fitted with the model including two-magnon scattering with no fixed parameters. The fitting results show that two-magnon scattering results in the nonlinear linewidth behavior, and the Gilbert damping factor is much smaller than reported ones, indicating that our Co2MnSi films are more suitable for the applications of spin transfer torque.
基金Project supported by the National Natural Science Foundation of China(Grant No.61504107)the Fundamental Research Funds for the Central Universities,China(Grant Nos.3102014JCQ01059 and 3102015ZY043)
文摘We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium（Ge） channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height（SBH） occurs following the insertion of the graphene layer between Co_2MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore,the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.
