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Spin-splitting above room-temperature in Janus Mn_(2)ClSeH antiferromagnetic semiconductor with a large out-of-plane piezoelectricity
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作者 Haiming Lu Sitong Bao +4 位作者 Bocheng Lei Sutao Sun Linglu Wu Jian Zhou Lili Zhang 《npj Computational Materials》 2025年第1期748-756,共9页
Two-dimensional(2D)antiferromagnets have garnered considerable research interest due to their robustness against external magnetic perturbation,ultrafast dynamics,and magneto-transport effects.However,the lack of spin... Two-dimensional(2D)antiferromagnets have garnered considerable research interest due to their robustness against external magnetic perturbation,ultrafast dynamics,and magneto-transport effects.However,the lack of spin-splitting in antiferromagnetic(AFM)materials severely limits their potential in spintronics applications.Inspired by inherent out-of-plane potential gradient of Janus structure,we predict three stable AFM Janus Mn_(2)ClXH(X=O,S,and Se)monolayers with spontaneous spin-splitting based on first-principles calculations.Notably,Janus Mn2ClSeH exhibits a high Néel temperature of up to 510 K,robust perpendicular magnetocrystalline anisotropy,outstanding out-of-plane piezoelectricity of 0.454×10^(−10)C/m,and sizeable spontaneous valley polarization of 17.2 meV.Moreover,the spin-splitting can be significantly enhanced through appropriate synergistic regulation of biaxial strain and external electric field.These results demonstrate that the Janus Mn2ClSeH monolayer is a very potential candidate for designing intriguing antiferromagnet-based devices with fantastic piezoelectric and valleytronic characteristics. 展开更多
关键词 magnetic anisotropy biaxial strain Janus Mn clseh valley polarization spin splitting SPINTRONICS antiferromagnetic semiconductor PIEZOELECTRICITY
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