Abstract The study on the catalysis of ionic liquids for alkylation of benzene with 1-octadecene to synthesize LAB （linear alkylbenzenes） was performed. The results showed that the most important factor that governe...Abstract The study on the catalysis of ionic liquids for alkylation of benzene with 1-octadecene to synthesize LAB （linear alkylbenzenes） was performed. The results showed that the most important factor that governed the conversion of olefin and selectivity of LAB was reaction temperature. Moreover, the effects of different ionic liquids and molar ratio of benzene to 1-octadecene on the conversion and selectivity were obviously in different degrees. The reaction temperature, molar ratio of benzene to 1-octadecene and the amount of catalyst were lower, compared with the traditional reaction technologies. The experimental results demonstrated that the ionic liquid had higher activity at 30℃, with over 98% selectivity of monoalkylbenzene and 100% conversion of the olefin at the molar ratio 0.08 of FeCl3 in ionic liquid to 1-octadecene and 10 for benzene to 1-octadecene.展开更多
A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 rat...A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 ratio in the Cl2/Ar/BCI3 mixture (20%—60%), increasing the ICR power and dc bias, and decreasing the chamber pressure. Surface morphology of the etched heterostructures strongly depends on the gas chemistry and the chamber pressure. Specifically, with the addition of 20% BCI3 to Cl2/Ar (4:1) gas mixture, nonselective etching of GaN/Al0.28Ga0.72N heterostructures at high etch rate is maintained and the surface root-mean-square (rms) roughness is reduced from 10.622 to 0.495 nm, which is smoother than the as-grown sample. Auger electron spectroscopy (AES) analysis shows that the effective removal of residual oxygen from the surface of AIGaN during the etching process is crucial to the nonselective and smooth etching of GaN/AIGaN herterostructures at high etch rate.展开更多
基金Supported by the National Natural Science Foundation of China （No.20276038） and Beijing Natural Science Foundation （No.2052010）.
文摘Abstract The study on the catalysis of ionic liquids for alkylation of benzene with 1-octadecene to synthesize LAB （linear alkylbenzenes） was performed. The results showed that the most important factor that governed the conversion of olefin and selectivity of LAB was reaction temperature. Moreover, the effects of different ionic liquids and molar ratio of benzene to 1-octadecene on the conversion and selectivity were obviously in different degrees. The reaction temperature, molar ratio of benzene to 1-octadecene and the amount of catalyst were lower, compared with the traditional reaction technologies. The experimental results demonstrated that the ionic liquid had higher activity at 30℃, with over 98% selectivity of monoalkylbenzene and 100% conversion of the olefin at the molar ratio 0.08 of FeCl3 in ionic liquid to 1-octadecene and 10 for benzene to 1-octadecene.
基金the Foundation for Key Projects of Basic Research (TG2000036601)the '863' High Tech Foundation (2002AA31119Z, 2001AA312190) the National Natural Science Foundation of China (Grant No. 60244001).
文摘A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 ratio in the Cl2/Ar/BCI3 mixture (20%—60%), increasing the ICR power and dc bias, and decreasing the chamber pressure. Surface morphology of the etched heterostructures strongly depends on the gas chemistry and the chamber pressure. Specifically, with the addition of 20% BCI3 to Cl2/Ar (4:1) gas mixture, nonselective etching of GaN/Al0.28Ga0.72N heterostructures at high etch rate is maintained and the surface root-mean-square (rms) roughness is reduced from 10.622 to 0.495 nm, which is smoother than the as-grown sample. Auger electron spectroscopy (AES) analysis shows that the effective removal of residual oxygen from the surface of AIGaN during the etching process is crucial to the nonselective and smooth etching of GaN/AIGaN herterostructures at high etch rate.
