In this study,a compact 16-channel integrated charge-sensitive preamplifier named the smart preamplifier(SPA)was developed to support the large-scale detector array used in modern nuclear physics experiments.Two types...In this study,a compact 16-channel integrated charge-sensitive preamplifier named the smart preamplifier(SPA)was developed to support the large-scale detector array used in modern nuclear physics experiments.Two types of SPA,namely SPA02 and SPA03(with external field effect transistor),have been manufactured to match silicon detectors with small and large capacitances,respectively.The characteristics of the SPA include fast response of typically less than 6 ns for pulse rising time and low equivalent noise of 1.5 keV at zero input capacitance.The energy sensitivity and pulse decay time can be easily adjusted by changing the feedback capacitance Cfand resistance Rfin various applications.A good energy resolution of 24.4 keV for 5.803-MeV alpha particles from 244 Cm was achieved using a small-sized Si-PIN detector;for the silicon strip detectors in the test with the alpha source,a typical energy resolution of 0.6–0.8%was achieved.The integrated SPA has been employed in several experiments of silicon strip detectors with hundreds of channels,and a good performance has been realized.展开更多
Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscop...Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873 K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073 K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.展开更多
Position-sensitive micro-channel plate (MCP) detectors are frequently used for the detection of particles like electrons and ions in atomic collision processes[1??3]. In this report, we present a one-dimensional posit...Position-sensitive micro-channel plate (MCP) detectors are frequently used for the detection of particles like electrons and ions in atomic collision processes[1??3]. In this report, we present a one-dimensional position-sensitive MCP detector based on a novel parallel-strip resistance anode and a pair of integrated charge sensitive spectroscopy amplifiers.展开更多
基金supported by the National Key R&D Program of China(No.2018YFA0404404)the National Natural Science Foundation of China(Nos.11635015,U1732145,11705285,11805280,U1867212,and 11961131012)the Continuous Basic Scientific Research Project(No.WDJC-2019-13).
文摘In this study,a compact 16-channel integrated charge-sensitive preamplifier named the smart preamplifier(SPA)was developed to support the large-scale detector array used in modern nuclear physics experiments.Two types of SPA,namely SPA02 and SPA03(with external field effect transistor),have been manufactured to match silicon detectors with small and large capacitances,respectively.The characteristics of the SPA include fast response of typically less than 6 ns for pulse rising time and low equivalent noise of 1.5 keV at zero input capacitance.The energy sensitivity and pulse decay time can be easily adjusted by changing the feedback capacitance Cfand resistance Rfin various applications.A good energy resolution of 24.4 keV for 5.803-MeV alpha particles from 244 Cm was achieved using a small-sized Si-PIN detector;for the silicon strip detectors in the test with the alpha source,a typical energy resolution of 0.6–0.8%was achieved.The integrated SPA has been employed in several experiments of silicon strip detectors with hundreds of channels,and a good performance has been realized.
基金Project supported by the National Natural Science Foundation of China (Grant No 10575124)
文摘Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873 K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073 K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.
文摘Position-sensitive micro-channel plate (MCP) detectors are frequently used for the detection of particles like electrons and ions in atomic collision processes[1??3]. In this report, we present a one-dimensional position-sensitive MCP detector based on a novel parallel-strip resistance anode and a pair of integrated charge sensitive spectroscopy amplifiers.
