A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channel high-electron-mobility-transistors(HEMTs).For GaN channel HEMTs with gate-drain spacing LGD=2.5μm,the brea...A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channel high-electron-mobility-transistors(HEMTs).For GaN channel HEMTs with gate-drain spacing LGD=2.5μm,the breakdown voltage VBR increases from 518 V to 582 V by increasing gate metal height h from 0.2μm to 0.4μm.For GaN channel HEMTs with LGD=7μm,VBR increases from 953 V to 1310 V by increasing h from 0.8μm to 1.6μm.The breakdown voltage enhancement results from the increase of the gate sidewall capacitance and depletion region extension.For Al0.4Ga0.6N channel HEMT with LGD=7μm,VBR increases from 1535 V to 1763 V by increasing h from 0.8μm to 1.6μm,resulting in a high average breakdown electric field of 2.51 MV/cm.Simulation and analysis indicate that the high gate metal height is an effective method to enhance breakdown voltage in GaN-based HEMTs,and this method can be utilized in all the lateral semiconductor devices.展开更多
The extraordinary transmission (ET) phenomenon is examined for waves propagating through gaps of vertical thin barriers in channels with a hypersingular boundary element method model on the linear potential theory, an...The extraordinary transmission (ET) phenomenon is examined for waves propagating through gaps of vertical thin barriers in channels with a hypersingular boundary element method model on the linear potential theory, and an estimate formula based on small gap approximation for predicting the number of ET frequencies is proposed. Numerical computations are carried out to examine the influences of barrier number, barrier interval, gap size, gap position and barrier arrangement on extraordinary transmission and wave height in the channel. It shows that all of those factors evidently affect the extraordinary transmission frequencies. The contours of wave amplitude show that very high waves can be excited in the basins between barriers at the extraordinary transmission frequencies. Proper arrangement of barriers in a channel can avoid the occurrence of ET phenomenon and reduce wave height in the channel.展开更多
The flow of liquids in open channels has been studied since ancient Rome. However, the vast majority of published reports on flow in open channels are focused on the transport of drinking water and sewage disposal. Th...The flow of liquids in open channels has been studied since ancient Rome. However, the vast majority of published reports on flow in open channels are focused on the transport of drinking water and sewage disposal. The literature on the transport of molten metals in open channels is quite scarce. In this work, the uniform flow of pig iron and molten aluminum in rectangular open channels is studied. Specific energy curves are constructed and critical heights are analytically determined. The transition from subcritical to supercritical flow is analyzed as a function of the angle of inclination of the channel and the roughness of its walls. Manning’s equation is applied to the pig iron flow using data reported in the literature for molten aluminum. The need to correct the roughness coefficient for pig iron is observed in order to obtain results consistent with those previously reported.展开更多
基金Project supported by the National Key Science&Technology Special Project of China(Grant No.2017ZX01001301)the National Key Research and Development Program of China(Grant No.2016YFB0400100)the National Natural Science Foundation of China(Grant Nos.51777168 and 61801374).
文摘A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channel high-electron-mobility-transistors(HEMTs).For GaN channel HEMTs with gate-drain spacing LGD=2.5μm,the breakdown voltage VBR increases from 518 V to 582 V by increasing gate metal height h from 0.2μm to 0.4μm.For GaN channel HEMTs with LGD=7μm,VBR increases from 953 V to 1310 V by increasing h from 0.8μm to 1.6μm.The breakdown voltage enhancement results from the increase of the gate sidewall capacitance and depletion region extension.For Al0.4Ga0.6N channel HEMT with LGD=7μm,VBR increases from 1535 V to 1763 V by increasing h from 0.8μm to 1.6μm,resulting in a high average breakdown electric field of 2.51 MV/cm.Simulation and analysis indicate that the high gate metal height is an effective method to enhance breakdown voltage in GaN-based HEMTs,and this method can be utilized in all the lateral semiconductor devices.
基金financially supported by the National Natural Science Foundation of China(Grant Nos.51490672 and 51879039)
文摘The extraordinary transmission (ET) phenomenon is examined for waves propagating through gaps of vertical thin barriers in channels with a hypersingular boundary element method model on the linear potential theory, and an estimate formula based on small gap approximation for predicting the number of ET frequencies is proposed. Numerical computations are carried out to examine the influences of barrier number, barrier interval, gap size, gap position and barrier arrangement on extraordinary transmission and wave height in the channel. It shows that all of those factors evidently affect the extraordinary transmission frequencies. The contours of wave amplitude show that very high waves can be excited in the basins between barriers at the extraordinary transmission frequencies. Proper arrangement of barriers in a channel can avoid the occurrence of ET phenomenon and reduce wave height in the channel.
文摘The flow of liquids in open channels has been studied since ancient Rome. However, the vast majority of published reports on flow in open channels are focused on the transport of drinking water and sewage disposal. The literature on the transport of molten metals in open channels is quite scarce. In this work, the uniform flow of pig iron and molten aluminum in rectangular open channels is studied. Specific energy curves are constructed and critical heights are analytically determined. The transition from subcritical to supercritical flow is analyzed as a function of the angle of inclination of the channel and the roughness of its walls. Manning’s equation is applied to the pig iron flow using data reported in the literature for molten aluminum. The need to correct the roughness coefficient for pig iron is observed in order to obtain results consistent with those previously reported.
