60CeO2-40TiO2 thin films were deposited on soda-lime silicate glass substrates by R.F. magnetron sputtering. The effects of heat-treatment on the UV-absorption of the thin films were studied on the 60CeO2-40TiO2 thin ...60CeO2-40TiO2 thin films were deposited on soda-lime silicate glass substrates by R.F. magnetron sputtering. The effects of heat-treatment on the UV-absorption of the thin films were studied on the 60CeO2-40TiO2 thin film with the largest UV cut-off wavelength. The sample films with CeO2：TiO2=60：40 were heated at 773 K, 873 K, 973 K for 30 min. These films are characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and X-ray photoelectron spectroscopy and spectrometer （XPS）. XRD analysis proves that the addition of TiO2 to CeO2 changed the crystalline state of CeO2. But the UV absorption effect of CeO2-TiO2 films with CeO2 crystallite phase is inferior to that of the amorphous phase CeO2-TiO2 films. XPS analysis also indicates that the amorphous phase CeO2-TiO2 films have the most Ce3＋ content in these films. Amorphous phase and crystalline phase of the CeO2-TiO2 films have different effects on UV absorption of the thin films.展开更多
A detailed investigation about the dependence of microstructure and electrical properties on annealing temperature was carried out for cerium oxide(CeO2) ultra-thin films(18 nm to 110 nm) on n-type Si(100) substrates ...A detailed investigation about the dependence of microstructure and electrical properties on annealing temperature was carried out for cerium oxide(CeO2) ultra-thin films(18 nm to 110 nm) on n-type Si(100) substrates by RF magnetron sputtering. Substrate temperature was kept constant at 400 ℃ for all samples. The as-deposited films were subsequently annealed in air ambient at 700,800 and 900 ℃ for 1 h respectively. The crystallinity and surface morphology of the CeO2 films were analyzed with X-ray diffractometer(XRD),scanning electron microscope(SEM),atomic force microscope(AFM) and Raman scattering measurement. Electrical properties of the Au/CeO2/Si/Au structure were examined by high frequency capacitance-voltage(C-V) characteristics at 1 MHz and leakage current density-electric field(J-E) characteristics. A Raman peak of the CeO2 thin films was seen at 463 cm-1. From C-V data,these films exhibit dielectric constants ranging from 18 to 23,the hysteresis width(-VFB) ranging from 0.015 V to 0.12 V and the density of trapped charges ranging from 1.45×1011 to 3.01×1011 cm-2. A leakage current of 4.75×10-8 -9.0×10-7 A/cm2 at 2 MV/cm was observed. The experimental results show that the CeO2 buffer layers are suitable for non-volatile metal-ferroelectric-insulator-semiconductor(MFIS) structure field-effect-transistors(FETs) memory applications.展开更多
CeO2-TiO2 films and CeO2-TiO/SnO2：Sb （6 mol%） double films were deposited on glass substrates by radio-frequency magnetron sputtering （R.F. Sputtering）, using SnO2：Sb（6 mol%） target, and CeO2- TiO2 targets wit...CeO2-TiO2 films and CeO2-TiO/SnO2：Sb （6 mol%） double films were deposited on glass substrates by radio-frequency magnetron sputtering （R.F. Sputtering）, using SnO2：Sb（6 mol%） target, and CeO2- TiO2 targets with different molar ratio of CeO2 to TiO2 （CeO2：TiO2-0：1.0; 0.1：0.9; 0.2：0.8; 0.3：0.7; 0.4：0.6; 0.5：0.5; 0.6：0.4; 0.7：0.3; 0.8：0.2; 0.9：0.1; 1.0：0）. The films are characterized by UV-visible transmission and infrared reflection spectra, scanning electron microscopy （SEM）, Raman spectroscopy, X-ray photoelectron spectroscopy （XPS） and X-ray diffraction （XRD）, respectively. The obtained results show that the amorphous phases composed of CeO2-TiO2 play an important role in absorbing UV, there are Ce^3-, Ce^4- and Ti^4- on the surface of the films; the glass substrates coated with CeO2-TiO2 （Ce/Ti=0.5：0.5; 0.6：0.4）/SnO2：Sb（6 mol%） double films show high absorbing UV（〉99）, high visible light transmission （75%） and good infrared reflection （〉70%）. The sheet resistance of the films is 30-50 Ω/□. The glass substrates coated with the double functional films can be used as window glass of buildings, automobile and so on.展开更多
CeO2 then films have been fabricated on stainless steel substrate heated at 700℃ in an oxygen ambient by pulsed laser deposition. SEM showed that as-deposited films are mainly com- posed of uniform nanocrystalline pa...CeO2 then films have been fabricated on stainless steel substrate heated at 700℃ in an oxygen ambient by pulsed laser deposition. SEM showed that as-deposited films are mainly com- posed of uniform nanocrystalline particles. Films were characterized by X-ray diffraction from which the oxygen deficient polycrystalline Ce6O11, with a modified monoclinic strUcture has been demon- strated. The electrochemical properties of the films were measured with cyclic voltammetry and galvonostatic charge /discharge techniques. Our results showed that the CeO2 film exhibits good cy- clibility with a reversible capacity of 45mC. cm-2（in the range of 0.1 to 1.5V at current density 40μA. cm-2）. It can be suggested that CeO2 thin film is suitable for the anode of Li rechargeable microbattery.展开更多
基金the National Natural Science Foundation of China(No.51032005)the Fundamental Research Funds for the Central Universities(Wuhan University of Technology)+1 种基金the China Postdoctoral Science Foundation(No.2012M511285)the Fund for the Young Innovative Team(Hubei University of Education)(No.2012KQ05)
文摘60CeO2-40TiO2 thin films were deposited on soda-lime silicate glass substrates by R.F. magnetron sputtering. The effects of heat-treatment on the UV-absorption of the thin films were studied on the 60CeO2-40TiO2 thin film with the largest UV cut-off wavelength. The sample films with CeO2：TiO2=60：40 were heated at 773 K, 873 K, 973 K for 30 min. These films are characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and X-ray photoelectron spectroscopy and spectrometer （XPS）. XRD analysis proves that the addition of TiO2 to CeO2 changed the crystalline state of CeO2. But the UV absorption effect of CeO2-TiO2 films with CeO2 crystallite phase is inferior to that of the amorphous phase CeO2-TiO2 films. XPS analysis also indicates that the amorphous phase CeO2-TiO2 films have the most Ce3＋ content in these films. Amorphous phase and crystalline phase of the CeO2-TiO2 films have different effects on UV absorption of the thin films.
基金Project(076044) supported by the Cultivation Fund of the Key Scientific and Technical Innovation Projects, Ministry of Education of ChinaProject(KF0602) supported by the Open Project Program of LDMAT (Xiangtan University), Ministry of Education, China
文摘A detailed investigation about the dependence of microstructure and electrical properties on annealing temperature was carried out for cerium oxide(CeO2) ultra-thin films(18 nm to 110 nm) on n-type Si(100) substrates by RF magnetron sputtering. Substrate temperature was kept constant at 400 ℃ for all samples. The as-deposited films were subsequently annealed in air ambient at 700,800 and 900 ℃ for 1 h respectively. The crystallinity and surface morphology of the CeO2 films were analyzed with X-ray diffractometer(XRD),scanning electron microscope(SEM),atomic force microscope(AFM) and Raman scattering measurement. Electrical properties of the Au/CeO2/Si/Au structure were examined by high frequency capacitance-voltage(C-V) characteristics at 1 MHz and leakage current density-electric field(J-E) characteristics. A Raman peak of the CeO2 thin films was seen at 463 cm-1. From C-V data,these films exhibit dielectric constants ranging from 18 to 23,the hysteresis width(-VFB) ranging from 0.015 V to 0.12 V and the density of trapped charges ranging from 1.45×1011 to 3.01×1011 cm-2. A leakage current of 4.75×10-8 -9.0×10-7 A/cm2 at 2 MV/cm was observed. The experimental results show that the CeO2 buffer layers are suitable for non-volatile metal-ferroelectric-insulator-semiconductor(MFIS) structure field-effect-transistors(FETs) memory applications.
基金the program for Changjiang Scholars and Innovative Research Team in University (No.IRT0547
文摘CeO2-TiO2 films and CeO2-TiO/SnO2：Sb （6 mol%） double films were deposited on glass substrates by radio-frequency magnetron sputtering （R.F. Sputtering）, using SnO2：Sb（6 mol%） target, and CeO2- TiO2 targets with different molar ratio of CeO2 to TiO2 （CeO2：TiO2-0：1.0; 0.1：0.9; 0.2：0.8; 0.3：0.7; 0.4：0.6; 0.5：0.5; 0.6：0.4; 0.7：0.3; 0.8：0.2; 0.9：0.1; 1.0：0）. The films are characterized by UV-visible transmission and infrared reflection spectra, scanning electron microscopy （SEM）, Raman spectroscopy, X-ray photoelectron spectroscopy （XPS） and X-ray diffraction （XRD）, respectively. The obtained results show that the amorphous phases composed of CeO2-TiO2 play an important role in absorbing UV, there are Ce^3-, Ce^4- and Ti^4- on the surface of the films; the glass substrates coated with CeO2-TiO2 （Ce/Ti=0.5：0.5; 0.6：0.4）/SnO2：Sb（6 mol%） double films show high absorbing UV（〉99）, high visible light transmission （75%） and good infrared reflection （〉70%）. The sheet resistance of the films is 30-50 Ω/□. The glass substrates coated with the double functional films can be used as window glass of buildings, automobile and so on.
文摘CeO2 then films have been fabricated on stainless steel substrate heated at 700℃ in an oxygen ambient by pulsed laser deposition. SEM showed that as-deposited films are mainly com- posed of uniform nanocrystalline particles. Films were characterized by X-ray diffraction from which the oxygen deficient polycrystalline Ce6O11, with a modified monoclinic strUcture has been demon- strated. The electrochemical properties of the films were measured with cyclic voltammetry and galvonostatic charge /discharge techniques. Our results showed that the CeO2 film exhibits good cy- clibility with a reversible capacity of 45mC. cm-2（in the range of 0.1 to 1.5V at current density 40μA. cm-2）. It can be suggested that CeO2 thin film is suitable for the anode of Li rechargeable microbattery.
