Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) perform...Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. GoodPL results were obtained under condition of growth an interruption of 10 s combined with a moderatestrain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed intodevices. Broad area lasers (100 μm x 500 μm) show very low threshold current densities (43 A/cm^2)and high slop efficiency (0.34 W/A, per facet).展开更多
CdS/CdTe solar cells with ZnTe/ZnTe： Cu buffer layers were fabricated and studied. The energy band structure of it was analyzed. The C-V, I-V characteristics and the spectral response show that the ZnTe/ZnTe：Cu buff...CdS/CdTe solar cells with ZnTe/ZnTe： Cu buffer layers were fabricated and studied. The energy band structure of it was analyzed. The C-V, I-V characteristics and the spectral response show that the ZnTe/ZnTe：Cu buffer layers improve the back contact characteristic properties, the diode characteristics of the forward junction and the short-wave spectral response of the CdTe solar cells. The ZnTe/ZnTe-Cu buffer layers affect the solar cell conversion efficiencv and its fill factor.展开更多
When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and the CdTe/GaAs hybrid substrates suitable for growing Hg_(1-x)Cd_xTe(CMT)were obtained.The x value in CMT is between 0.2 and 0.8....When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and the CdTe/GaAs hybrid substrates suitable for growing Hg_(1-x)Cd_xTe(CMT)were obtained.The x value in CMT is between 0.2 and 0.8.The electrical properties of CMT depend upon the thickness of CdTe epi-layers.The CdTe/GaAs interface was examined by both scanning electron microscope(SEM)and electron auger spectra (EAS).The influence of defects observed at interface on electrical and optical properties of CMT fihns was dis- cussed.展开更多
Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-...Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-ray diffraction,TEM,DCXD,FTIR and Van der Pauw technique were employed to determine the crystalline,optical and electrical properties of CMT epilayers,which are effectively im- proved as compared with the previous data.展开更多
Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode （t-mode） photocathode materi...Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode （t-mode） photocathode materials before Cs-O activation. Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1-xAs/GaAs structure material. This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures. It also helps study various doping structures and optimize structure designs in the future.展开更多
文摘Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. GoodPL results were obtained under condition of growth an interruption of 10 s combined with a moderatestrain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed intodevices. Broad area lasers (100 μm x 500 μm) show very low threshold current densities (43 A/cm^2)and high slop efficiency (0.34 W/A, per facet).
基金the High Technology Research and Development Programme of China(No.2003AA513010)the National Natural Science Foundation of China(No.50079030).
文摘CdS/CdTe solar cells with ZnTe/ZnTe： Cu buffer layers were fabricated and studied. The energy band structure of it was analyzed. The C-V, I-V characteristics and the spectral response show that the ZnTe/ZnTe：Cu buffer layers improve the back contact characteristic properties, the diode characteristics of the forward junction and the short-wave spectral response of the CdTe solar cells. The ZnTe/ZnTe-Cu buffer layers affect the solar cell conversion efficiencv and its fill factor.
文摘When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and the CdTe/GaAs hybrid substrates suitable for growing Hg_(1-x)Cd_xTe(CMT)were obtained.The x value in CMT is between 0.2 and 0.8.The electrical properties of CMT depend upon the thickness of CdTe epi-layers.The CdTe/GaAs interface was examined by both scanning electron microscope(SEM)and electron auger spectra (EAS).The influence of defects observed at interface on electrical and optical properties of CMT fihns was dis- cussed.
文摘Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-ray diffraction,TEM,DCXD,FTIR and Van der Pauw technique were employed to determine the crystalline,optical and electrical properties of CMT epilayers,which are effectively im- proved as compared with the previous data.
基金supported by the General Administra-tion for Quality Supervision of China(No.2008QK328)the Zhejiang Provincial Natural Science Foundation of China(No.Y5090150)
文摘Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode （t-mode） photocathode materials before Cs-O activation. Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1-xAs/GaAs structure material. This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures. It also helps study various doping structures and optimize structure designs in the future.
