Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the opt...Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε') of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated展开更多
Transparent conducting oxides CdIn2O4 thin films were prepared by radio-frequenc y reactive sputtering from a Cd-In alloy target in Ar+O2 atmosphere. By transmis sion spectrum and Hall measurement for different sample...Transparent conducting oxides CdIn2O4 thin films were prepared by radio-frequenc y reactive sputtering from a Cd-In alloy target in Ar+O2 atmosphere. By transmis sion spectrum and Hall measurement for different samples prepared at different s ubstrate temperatures, it could be found that the carrier concentration would in crease with the decrease of substrate temperature, but absorption edge showed an abrupt variation from a blue shift to a red shift. Theoretically, the paper for mulated the effect of high-density point defects on band structures; it embodied the formation of band tailing, Burstein-Moss shift and band-gap narrowing. The density of holes will influence the magnitude of optical band gap and transmitta nce of light. Since extrapolation method does not fit degenerate semiconductor m aterials, a more accurate method of obtaining optical band gap is curve fitting. In addition, ionized impurities scattering is the main damping mechanism of the free electrons in CdIn2O4 films, the density of ionized impurities induced by a ltering substrate temperature will affect the carriers mobility.展开更多
文摘Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε') of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated
基金This work was supported by the National Natural Science Foundation of China(No,69876018).
文摘Transparent conducting oxides CdIn2O4 thin films were prepared by radio-frequenc y reactive sputtering from a Cd-In alloy target in Ar+O2 atmosphere. By transmis sion spectrum and Hall measurement for different samples prepared at different s ubstrate temperatures, it could be found that the carrier concentration would in crease with the decrease of substrate temperature, but absorption edge showed an abrupt variation from a blue shift to a red shift. Theoretically, the paper for mulated the effect of high-density point defects on band structures; it embodied the formation of band tailing, Burstein-Moss shift and band-gap narrowing. The density of holes will influence the magnitude of optical band gap and transmitta nce of light. Since extrapolation method does not fit degenerate semiconductor m aterials, a more accurate method of obtaining optical band gap is curve fitting. In addition, ionized impurities scattering is the main damping mechanism of the free electrons in CdIn2O4 films, the density of ionized impurities induced by a ltering substrate temperature will affect the carriers mobility.
