A novel high performance SemiSJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift region forms a lateral P/N junction, which can adjust the el...A novel high performance SemiSJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift region forms a lateral P/N junction, which can adjust the electric distribution in the forward-blocking mode to achieve a higher breakdown voltage compared to the conventional CSTBT. Also, the p-pillar can act as a hole collector at turn-off, which significantly enhances the turn-off speed and obtains a lower turn-off switching loss. Although the turn-off switching loss decreases as the depth of the p-pillar increases, there is no need for a very deep p-pillar. The associated voltage overshoot at turn-off increases dramatically with increasing the depth of p-pillar, which may cause destruction of the devices. Plus, this will add difficulty and cost to the manufacturing process of this new structure. Therefore, the proposed SemiSJ- CSTBT offers considerably better robustness compared to the conventional CSTBT and SJ-CSTBT. The simulation results show that the SemiSJ-CSTBT exhibits an increase in breakdown voltage by 160 V （13%） and a reduction of turn-off switching loss by approximately 15%.展开更多
We propose a novel high performance carrier stored trench bipolar transistor(CSTBT)with dual shielding structure(DSS-CSTBT).The proposed DSS-CSTBT features a double trench structure with different trench profiles in t...We propose a novel high performance carrier stored trench bipolar transistor(CSTBT)with dual shielding structure(DSS-CSTBT).The proposed DSS-CSTBT features a double trench structure with different trench profiles in the surface,in which a shallow gate trench is shielded by a deep emitter trench and a thick oxide layer under it.Compared with the conventional CSTBT(con-CSTBT),the proposed DSS-CSTBT not only alleviates the negative impact of the shallow gate trench and highly doped CS layer on the breakdown voltage(BV),but also well reduces the gate-collector capacitance CGC,gate charge Q_(G),and turn-off loss E_(OFF)of the device.Furthermore,lower turn-on loss E_(ON)and gate drive loss E_(DR)are also obtained.Simulation results show that with the same CS layer doping concentration N_(CS)=1.5×10^(16)cm^(-3),the BV increases from 1312 V of the con-CSTBT to 1423 V of the proposed DSS-CSTBT with oxide layer thickness under gate(T_(og2))of 1μm.Moreover,compared with the con-CSTBT,the C_(GC)at V_(CE)of 25 V and miller plateau charge(Q_(GC))for the proposed DSS-CSTBT with T_(og2)of 1μm are reduced by 79.4%and 74.3%,respectively.With the VGEincreases from 0 V to 15 V,the total QGfor the proposed DSS-CSTBT with T_(og2)of 1μm is reduced by 49.5%.As a result,at the same on-state voltage drop(V_(CEON))of 1.55 V,the E_(ON)and E_(OFF)are reduced from 20.3 mJ/cm^(2)and 19.3 mJ/cm^(2)for the con-CSTBT to8.2 mJ/cm^(2)and 9.7 mJ/cm^(2)for the proposed DSS-CSTBT with T_(og2)of 1μm,respectively.The proposed DSS-CSTBT not only significantly improves the trade-off relationship between the V_(CEON)and E_(OFF)but also greatly reduces the E_(ON).展开更多
A novel high performance carrier stored trench bipolar transistor （CSTBT） with a field- modified P-base region is proposed. Due to the p-pillars inserted into the drift region extending the P-base region to the bott...A novel high performance carrier stored trench bipolar transistor （CSTBT） with a field- modified P-base region is proposed. Due to the p-pillars inserted into the drift region extending the P-base region to the bottom of the trench gate, the electric field around the trench gate is modified, preventing the CSTBT from breakdown in advance caused by a concentration of the electric field at the edge of the trench gate. The p-pillars under the p-well forming the novel P-base region also provide extra paths for hole transportation. Thus, the switching time is also reduced. Simulation results have shown that the blocking voltage （BV） of the novel CSTBT is almost 430 V higher exhibiting avalanche breakdown properties compared with the conventional CSTBT. Moreover, the turn-off time of the novel structure is 0.3μs （17%） shorter than the conventional CSTBT with the same gate length.展开更多
A carrier stored trench-gate bipolar transistor（CSTBT） with a p-floating layer（PF-CSTBT） is proposed. Due to the p-floating layer,the thick and highly doped carrier stored layer can be induced,and the conductivity...A carrier stored trench-gate bipolar transistor（CSTBT） with a p-floating layer（PF-CSTBT） is proposed. Due to the p-floating layer,the thick and highly doped carrier stored layer can be induced,and the conductivity modulation effect will be enhanced near the emitter.The accumulation resistance and the spreading resistance are reduced.The on-state loss will be much lower than in a conventional CSTBT.With the p-floating layer,the distribution of electric fields of the conventional IGBT is reformed,and the breakdown voltage is remarkably improved.The simulation results have shown that the forward voltage drop（VCE-on）） of the novel structure is reduced by 20%and 17%respectively, compared with the conventional trench IGBT（TIGBT） and CSTBT under the same conditions.Moreover,an increment of more than 100 V of the breakdown voltage is achieved without sacrificing the SCSOA（short circuit safety operation area） compared with the conventional TIGBT.展开更多
基金supported by the National Major Science and Technology Special Project of China(No.2013ZX02305005-002)the Major Program of the National Natural Science Foundation of China(No.51490681)
文摘A novel high performance SemiSJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift region forms a lateral P/N junction, which can adjust the electric distribution in the forward-blocking mode to achieve a higher breakdown voltage compared to the conventional CSTBT. Also, the p-pillar can act as a hole collector at turn-off, which significantly enhances the turn-off speed and obtains a lower turn-off switching loss. Although the turn-off switching loss decreases as the depth of the p-pillar increases, there is no need for a very deep p-pillar. The associated voltage overshoot at turn-off increases dramatically with increasing the depth of p-pillar, which may cause destruction of the devices. Plus, this will add difficulty and cost to the manufacturing process of this new structure. Therefore, the proposed SemiSJ- CSTBT offers considerably better robustness compared to the conventional CSTBT and SJ-CSTBT. The simulation results show that the SemiSJ-CSTBT exhibits an increase in breakdown voltage by 160 V （13%） and a reduction of turn-off switching loss by approximately 15%.
基金the National Key Research and Development Program of China(Grant No.2018YFB1201802)the Key Realm R&D Program of Guangdong Province,China(Grant No.2018B010142001)the Guangdong Basic and Applied Basic Research Foundation,China(Grant No.2020A1515010128).
文摘We propose a novel high performance carrier stored trench bipolar transistor(CSTBT)with dual shielding structure(DSS-CSTBT).The proposed DSS-CSTBT features a double trench structure with different trench profiles in the surface,in which a shallow gate trench is shielded by a deep emitter trench and a thick oxide layer under it.Compared with the conventional CSTBT(con-CSTBT),the proposed DSS-CSTBT not only alleviates the negative impact of the shallow gate trench and highly doped CS layer on the breakdown voltage(BV),but also well reduces the gate-collector capacitance CGC,gate charge Q_(G),and turn-off loss E_(OFF)of the device.Furthermore,lower turn-on loss E_(ON)and gate drive loss E_(DR)are also obtained.Simulation results show that with the same CS layer doping concentration N_(CS)=1.5×10^(16)cm^(-3),the BV increases from 1312 V of the con-CSTBT to 1423 V of the proposed DSS-CSTBT with oxide layer thickness under gate(T_(og2))of 1μm.Moreover,compared with the con-CSTBT,the C_(GC)at V_(CE)of 25 V and miller plateau charge(Q_(GC))for the proposed DSS-CSTBT with T_(og2)of 1μm are reduced by 79.4%and 74.3%,respectively.With the VGEincreases from 0 V to 15 V,the total QGfor the proposed DSS-CSTBT with T_(og2)of 1μm is reduced by 49.5%.As a result,at the same on-state voltage drop(V_(CEON))of 1.55 V,the E_(ON)and E_(OFF)are reduced from 20.3 mJ/cm^(2)and 19.3 mJ/cm^(2)for the con-CSTBT to8.2 mJ/cm^(2)and 9.7 mJ/cm^(2)for the proposed DSS-CSTBT with T_(og2)of 1μm,respectively.The proposed DSS-CSTBT not only significantly improves the trade-off relationship between the V_(CEON)and E_(OFF)but also greatly reduces the E_(ON).
基金Project supported by the State Key Project of Science and Technology,China(No.2011ZX02706-003)
文摘A novel high performance carrier stored trench bipolar transistor （CSTBT） with a field- modified P-base region is proposed. Due to the p-pillars inserted into the drift region extending the P-base region to the bottom of the trench gate, the electric field around the trench gate is modified, preventing the CSTBT from breakdown in advance caused by a concentration of the electric field at the edge of the trench gate. The p-pillars under the p-well forming the novel P-base region also provide extra paths for hole transportation. Thus, the switching time is also reduced. Simulation results have shown that the blocking voltage （BV） of the novel CSTBT is almost 430 V higher exhibiting avalanche breakdown properties compared with the conventional CSTBT. Moreover, the turn-off time of the novel structure is 0.3μs （17%） shorter than the conventional CSTBT with the same gate length.
文摘A carrier stored trench-gate bipolar transistor（CSTBT） with a p-floating layer（PF-CSTBT） is proposed. Due to the p-floating layer,the thick and highly doped carrier stored layer can be induced,and the conductivity modulation effect will be enhanced near the emitter.The accumulation resistance and the spreading resistance are reduced.The on-state loss will be much lower than in a conventional CSTBT.With the p-floating layer,the distribution of electric fields of the conventional IGBT is reformed,and the breakdown voltage is remarkably improved.The simulation results have shown that the forward voltage drop（VCE-on）） of the novel structure is reduced by 20%and 17%respectively, compared with the conventional trench IGBT（TIGBT） and CSTBT under the same conditions.Moreover,an increment of more than 100 V of the breakdown voltage is achieved without sacrificing the SCSOA（short circuit safety operation area） compared with the conventional TIGBT.
