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Current Mismatches in Charge Pumps of DLL-Based RF CMOS Oscillators 被引量:1
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作者 李金城 仇玉林 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第11期1369-1373,共5页
A research on the spurious tones due to the current mismatch in charge pumps of DLL(Delay Locked Loop) based RF CMOS oscillators is performed.An equation for strength evaluation of the spurious tones is derived.Two t... A research on the spurious tones due to the current mismatch in charge pumps of DLL(Delay Locked Loop) based RF CMOS oscillators is performed.An equation for strength evaluation of the spurious tones is derived.Two tables are provided to make it obvious to understand for the characteristics of spurious tones changing with related parameters.Some suggestions are given for the design of a DLL based RF CMOS oscillators. 展开更多
关键词 spurious tone Phase Locked Loop (PLL) DLL RF cmos transceiver Local Oscillator(LO)
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The Jitter Performance Comparison Between DLL and PLL-Based RF CMOS Oscillators
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作者 李金城 仇玉林 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第10期1246-1249,共4页
By jitter performance comparison between PLL (Phase Locked Loop) and DLL (Delay Locked Loop),a helpful equation is derived for the structure choice between DLL and PLL based synthesizers fabricated in CMOS processes ... By jitter performance comparison between PLL (Phase Locked Loop) and DLL (Delay Locked Loop),a helpful equation is derived for the structure choice between DLL and PLL based synthesizers fabricated in CMOS processes to get an optimum jitter performance and power consumption.For a frequency synthesizer,a large multiple factor prefers PLL based configuration which consumes less power,while a small one needs DLL based topology which produces a better jitter performance. 展开更多
关键词 JITTER PLL DLL frequency synthesizer RF cmos transceiver Local Oscillator(LO) Voltage Controlled Delay Line(VCDL) VCO
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A NOVEL PHYSICAL-LAYER TRANSCEIVER USED IN USB2.0 SERIAL DATA LINK 被引量:1
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作者 Li Haoliang He Lenian Wang Zi Yan Xiaolang 《Journal of Electronics(China)》 2006年第5期736-740,共5页
The paper proposes a novel transceiver in physical layer for high-speed serial data link based upon Universal Serial Bus (USB) 2.0, comprising transmitter and receiver. In the design, transmitter contains pre-and-main... The paper proposes a novel transceiver in physical layer for high-speed serial data link based upon Universal Serial Bus (USB) 2.0, comprising transmitter and receiver. In the design, transmitter contains pre-and-main driver to satisfy slew rate of output data, receiver includes optimized topology to improve preci- sion of received data. The circuit simulation is based on Cadence’s spectre software and Taiwan Semiconduc- tor Manufacture Corporation’s library of 0.25μm mixed-signal Complementary Metal-Oxide Semiconductor (CMOS) model. The front and post-simulation results reveal that the transceiver designed can transmit and re- ceive high-speed data in 480Mbps, which is in agreement with USB2.0 specification. The chip of physi- cal-layer transceiver has been designed and implemented with 0.25μm standard CMOS technology. 展开更多
关键词 Complementary Metal-Oxide Semiconductor(cmos transceiver Physical layer High-speed Universal Serial Bus (USB) 2.0
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Terahertz metadevices for silicon plasmonics
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作者 Yuan Liang Hao Yu +2 位作者 Hong Wang Hao Chi Zhang Tie Jun Cui 《Chip》 2022年第4期37-65,共29页
Metamaterial devices(metadevices)have been developed in progress aiming to generate extraordinary performance over traditional de-vices in the(sub-)terahertz(THz)domain,and their planar integra-tion with complementary... Metamaterial devices(metadevices)have been developed in progress aiming to generate extraordinary performance over traditional de-vices in the(sub-)terahertz(THz)domain,and their planar integra-tion with complementary-metal-oxide-semiconductor(CMOS)cir-cuits pave a new way to build miniature silicon plasmonics that over-comes existing challenges in chip-to-chip communication.In an effort towards low-power,crosstalk-tolerance,and high-speed data link for future exascale data centers,this article reviews the recent progress on two metamaterials,namely,the spoof surface plasmon polaritons(SPPs),and the split-ring resonator(SRR),as well as their imple-mentations in silicon,focusing primarily on their fundamental the-ories,design methods,and implementations for future THz commu-nications.Owing to their respective dispersion characteristic at THz,these two metadevices are highly expected to play an important role in miniature integrated circuits and systems toward compact size,dense integration,and outstanding performance.A design example of a fully integrated sub-THz CMOS silicon plasmonic system integrating these two metadevices is provided to demonstrate a dual-channel crosstalk-tolerance and energy-efficient on-off keying(OOK)communication system.Future directions and potential applications for THz metade-vices are discussed. 展开更多
关键词 cmos I/O transceiver Channel crosstalk METAMATERIAL Metawaveguide Spoof surface plasmon polaritons Split-ring resonator TERAHERTZ Transmission line Interconnect
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