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An ultra-low-power CMOS temperature sensor for RFID applications 被引量:5
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作者 徐琮辉 高佩君 +3 位作者 车文毅 谈熙 闫娜 闵昊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第4期82-85,共4页
An ultra-low-power CMOS temperature sensor with analog-to-digital readout circuitry for RFID applications was implemented in a 0.18-μm CMOS process. To achieve ultra-low power consumption, an error model is proposed ... An ultra-low-power CMOS temperature sensor with analog-to-digital readout circuitry for RFID applications was implemented in a 0.18-μm CMOS process. To achieve ultra-low power consumption, an error model is proposed and the corresponding novel temperature sensor front-end with a new double-measure method is presented. Analog-to-digital conversion is accomplished by a sigma-delta converter. The complete system consumes only 26 μA @ 1.8 V for continuous operation and achieves an accuracy of ±0.65 °C from –20 to 120 °C after calibration at one temperature. 展开更多
关键词 cmos temperature sensor error analysis digital output low power RFID
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