This paper presents the design and the experimental measurements of two complementary metal-oxide-semiconductor (CMOS) LC-tuned voltage controlled oscillators (VCO) implemented in a 0.18 μm 6-metal-layer mixed-signal...This paper presents the design and the experimental measurements of two complementary metal-oxide-semiconductor (CMOS) LC-tuned voltage controlled oscillators (VCO) implemented in a 0.18 μm 6-metal-layer mixed-signal/RF CMOS technology. The design methodologies and approaches for the optimization of the ICs are presented. The first design is optimized for mixed-signal transistor, oscillated at 2.64 GHz with a phase noise of -93.5 dBc/Hz at 500 kHz offset. The second one optimized for RF transistor, using the same architecture, oscillated at 2.61 GHz with a phase noise of -95.8 dBc/Hz at 500 kHz offset. Under a 2 V supply, the power dissipation is 8 mW, and the maximum buffered output power for mixed-signal and RF transistor are -7 dBm and -5.4 dBm, respectively. Both kinds of oscillators make use of on-chip components only, allowing for simple and robust integration.展开更多
We propose a novel thermal-conscious power model for integrated circuits that can accurately predict power and temperature under voltage scaling. Experimental results show that the leakage power consumption is underes...We propose a novel thermal-conscious power model for integrated circuits that can accurately predict power and temperature under voltage scaling. Experimental results show that the leakage power consumption is underestimated by 52 % if thermal effects are omitted. Furthermore, an inconsistency arises when energy and temperature are simultaneously optimized by dynamic voltage scaling. Temperature is a limiting factor for future integrated circuits,and the thermal optimization approach can attain a temperature reduction of up to 12℃ with less than 1.8% energy penalty compared with the energy optimization one.展开更多
The folded-cascode structure is used to realize the low-voltage low-power consumption mixer, whose performance parameters have big influence on the navigation radio receiver＇s performance. Adopting the folded-cascode...The folded-cascode structure is used to realize the low-voltage low-power consumption mixer, whose performance parameters have big influence on the navigation radio receiver＇s performance. Adopting the folded-cascode structure, the folded-cascode mixer （FCM） has a lower power supply voltage of 1.2 V and realizes the design trade-offs among the high transconductance, high linearity and low noise. The difficulties of realizing the trade-offs between the linearity and noise performance, the linearity and conversion gain, the conversion gain and noise performance are reduced. Fabricated in an radio frequency （RF） 0.18 μm CMOS process, the FCM has an active area of about 200 μm ×150 μm and consumes approximate 3.9 mW. The test results show that the FCM features a conversion gain （Gc） of some 14.5 dB, an input 1 dB compression point （Pin-1dB） of almost -13 dBm and a dual sideband （DSB） noise figure of around 12 dB. The FCM can be applied to the navigation radio receivers and electronic systems for aviation and aerospace or other related fields.展开更多
The proposed DAC consists of a unit current-cell matrix for 8MSBs and a binary-weighted array for 4LSBs,trading-off between the precision,speed,and size of the chip.In order to ensure the linearity of the DAC,a double...The proposed DAC consists of a unit current-cell matrix for 8MSBs and a binary-weighted array for 4LSBs,trading-off between the precision,speed,and size of the chip.In order to ensure the linearity of the DAC,a double Centro symmetric current matrix is designed by the Q2 random walk strategy.To achieve better dynamic performance,a latch is added in front of the current switch to change the input signal,such as its optimal cross-point and voltage level.For a 12bit resolution,the converter reaches an update rate of 300MHz.展开更多
A novel superimposed photodetector （PD） is put forward. The photodetector can obtain a couple Of differential photocur- rent signals from one input optical signal. The light injection efficiency and the vertical wor...A novel superimposed photodetector （PD） is put forward. The photodetector can obtain a couple Of differential photocur- rent signals from one input optical signal. The light injection efficiency and the vertical work distance of this new.photode- tector are much higher than those of the others. The superimposed photodetctor is designed based on the standard 0.18 p.m CMOS process. The responsivity, bandwidth and transient response of the photodetector are simulated by a commercial simulation software of ATLAS. The responsivities of two obtained photocurrent signals are 0.035 A/W and 0.034 A/W, while the bandwidths are 3.8 GHz and 5.2 GHz, respectively. A full differential optical receiver which uses the superim- posed photodetector as input is simulated. The frequency response and 4 Gbit/s eye diagram of the optical receiver are also obtained. The results show that the two output signals can be used as the differential signal.展开更多
A CMOS folding and interpolating analog-to-digital converter (ADC) for embedded application is described.The circuit is fully compatible with standard digital CMOS technology.A modified folding block implemented witho...A CMOS folding and interpolating analog-to-digital converter (ADC) for embedded application is described.The circuit is fully compatible with standard digital CMOS technology.A modified folding block implemented without resistor contributes to a small chip area.At the input stage,offset averaging reduces the input capacitance and the distributed track-and-hold circuits are proposed to improve signal-to-noise-plus-distortion ratio.The 200Ms/s 8bit ADC with 177mW total power consumption at 3.3V power supply is realized in standard digital 0.18μm 3.3V CMOS technology.展开更多
Frequency synthesizer is an important part of optical and wireless communication system. Low power comsumption prescaler is one of the most critical unit of frequency synthesizer. For the frequency divider, it must be...Frequency synthesizer is an important part of optical and wireless communication system. Low power comsumption prescaler is one of the most critical unit of frequency synthesizer. For the frequency divider, it must be programmable for channel selection in multi-channel communication systems. A dual-modulus prescaler (DMP) is needed to provide variable division ratios. DMP is considered as a critical power dissipative block since it always operates at full speed. This paper introduces a high speed and low power complementary metal oxide semiconductor (CMOS) 15/16 DMP based on true single-phase-clock (TSPC) and transmission gates (TGs) cell. A conventional TSPC is optimized in terms of devices size, and it is resimulated. The TSPC is used in the synchronous and asynchronous counter. TGs are used in the control logic. The DMP circuit is implemented in 0.18 μm CMOS process. The simulation results are provided. The results show wide operating frequency range from 7.143 MHz to 4.76 GHz and it comsumes 3.625 mW under 1.8 V power supply voltage at 4.76 GHz.展开更多
A 1.9GHz down-conversion CMOS mixer with a novel folded Gilbert cell,intended for use in GSM1900 （PCS1900） low-IF receivers,is fabricated in a RF 0.18μm CMOS process. The prototype demonstrates good performance at ...A 1.9GHz down-conversion CMOS mixer with a novel folded Gilbert cell,intended for use in GSM1900 （PCS1900） low-IF receivers,is fabricated in a RF 0.18μm CMOS process. The prototype demonstrates good performance at an intermediate frequency of 100kHz. It achieves a conversion gain of 6dB, SSB noise figure of 18. 5dB （1MHz IF） ,and IIP3 11.5dBm while consuming a 7mA current from a 3.3V power supply.展开更多
With the increasing use of low voltage portable devices and wireless systems, energy harvesting has become an attractive approach to overcome the problems associated with battery life and power source. Among the diffe...With the increasing use of low voltage portable devices and wireless systems, energy harvesting has become an attractive approach to overcome the problems associated with battery life and power source. Among the different types of microenergy scavengers, the TEG （thermoelectric generators） are one of the most commonly used one. Unfortunately, due to the very small amount of voltage delivered by the TEG, an efficient DC/DC （direct current/direct current） conversion and power management techniques are needed. In this paper, a CMOS （complementary metal oxide semiconductor） fully-integrated DC/DC convener for energy harvesting applications is presented. The startup-voltage of the converter is about 140 mV, the output voltage exceeds 1.5 V, with a 20% power efficiency at least. The architecture for boosting such extremely low voltages is based on an ultra-low-voltage oscillator cross connected to two phase charge pump. The overall circuit does not require any external components and can be fully integrated in a standard CMOS low voltage technology. A test-chip has been designed in UMC （united microelectronics corporation） 180 nm CMOS process.展开更多
This paper presents a 2GS/s 10bit CMOS digital-to-analog converter （DAC） that consists of two unit current-cell matrixes for 6MSBs and 4LSBs, respectively, trading off between the precision and size of the chip. Cur...This paper presents a 2GS/s 10bit CMOS digital-to-analog converter （DAC） that consists of two unit current-cell matrixes for 6MSBs and 4LSBs, respectively, trading off between the precision and size of the chip. Current mode logic （CML） is used to ensure high speed,and a double centro-symmetric current matrix is designed by the Q^2 random walk strategy in order to ensure the linearity of the DAC. The DAC occupies 2.2mm × 2.2mm of die area and consumes 790mW with a single 3.3V power supply.展开更多
Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field ...Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4(BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced,which only needs a few technology parameters.With this transistor intrinsic gain model,complementary metal-oxide-semiconductor(CMOS) operational amplifier(op amp) DC gain could be predicted.A two-stage folded cascode op amp is used as an example in this work.Non-minimum length device is used to improve the op amp DC gain.An improvement of 20 dB is proved when using doubled channel length design.Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain.After these,a full op amp DC gain scaling roadmap is proposed,from 130 nm technology node to 32 nm technology node.Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB.Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology.The prediction based on our simplified gain model agrees with SPICE simulation results.展开更多
A low-power and high-speed 16:1 MUX IC designed for Optical fiber communication based on TSMC 0.25 μm CMOS technology is represented. A tree-type architecture was utilized. The output data bit rate is 2.5 Gb/s at inp...A low-power and high-speed 16:1 MUX IC designed for Optical fiber communication based on TSMC 0.25 μm CMOS technology is represented. A tree-type architecture was utilized. The output data bit rate is 2.5 Gb/s at input clock rate of 1.25 GHz. The simulation results show that the output signal has peak-to-peak amplitude of 400 mV, the power dissipation is less than 200 mW and the power dissipation of core circuit is less than 20 mW at the 2.5 Gb/s standard bit rate and supply voltage of 2.5 V. The chip area is （1.8） mm2.展开更多
This paper proposes a new battery management system （BMS） based on a master-slave control mode for multi-cell li-ion battery packs. The proposed BMS can be applied in li-ion battery packs with any cell number. The w...This paper proposes a new battery management system （BMS） based on a master-slave control mode for multi-cell li-ion battery packs. The proposed BMS can be applied in li-ion battery packs with any cell number. The whole system is composed of a master processor and a string of slave manager cells （SMCs）. Each battery cell corresponds to an SMC. Unlike the conventional BMS, the proposed one has a novel method for communication, and it collects the battery status information in a direct and simple way. An SMC communicates with its adjacent counterparts to transfer the battery information as well as the commands from the master processor. The nethermost SMC communicates with the master processor directly. This method allows the battery management chips to be implemented in a standard CMOS （ complementary metal-oxide-semiconductor transistor） process. A testing chip is fabricated in the CSMC 0.5 μm 5 V N-well CMOS process. The testing results verify that the proposed method for data communication and the battery management system can protect and manage multi-cell li-ion battery packs.展开更多
A compact direct digital frequency synthesizer （DDFS） for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase...A compact direct digital frequency synthesizer （DDFS） for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase to sine mapping data is compressed using sine symmetry technique, sine-phase difference technique, quad line approximation technique,and quantization and error read only memory （QE-ROM） technique. The ROM size is reduced by 98% using these techniques. A compact DDFS chip with 32bit phase storage depth and a 10bit on-chip digital to analog converter has been successfully implemented using a standard 0.35μm CMOS process. The core area of the DDFS is 1.6mm^2. It consumes 167mW at 3.3V,and its spurious free dynamic range is 61dB.展开更多
An optimized design of the monolithic switched capacitor DC-DC converter is presented.The general topologic circuit and its basic operating principles are discussed theoretically.Circuit equivalent resistance regulati...An optimized design of the monolithic switched capacitor DC-DC converter is presented.The general topologic circuit and its basic operating principles are discussed theoretically.Circuit equivalent resistance regulation method is proposed as a feasible method to design the on-chip converters.N-channel MOSFETs,instead of Schottky diodes,are used as the diodes in the converters because of their processing compatibility in monolithic fabrication.One more manufacture step,however,is expected to adjust the threshold voltage of the MOSFETs for improving output characteristics of the converters.As an example,a step-up switched-capacitor converter is fabricated in a 2μm p-well double-poly single-metal CMOS technology with breakdown voltage of 15V.Test results indicate that a single sampling cell with 0.4mm 2 of die size can deliver energy up to 0.63mW at 5V output under the condition of 3V input.Efficiency of the tested sample is 68% at 9.8MHz switching frequency...展开更多
A novel symmetrical chirped beam splitter based on a binary blazed grating is proposed, which adopts the fully-etched grating structure compatible with the current fabrication facilities for CMOS technology and conven...A novel symmetrical chirped beam splitter based on a binary blazed grating is proposed, which adopts the fully-etched grating structure compatible with the current fabrication facilities for CMOS technology and convenient for integration and manufacture process. This structure can realize nearly equal-power splitting operation under the condition of TE polarization incidence. When the absolutely normal incidence occurs at the wavelength of 1580 nm, the coupling efficiencies of the left and the right branches are 43.627% and 43.753%, respectively. Moreover, this structure has the tolerances of 20 nm in etched depth and 3?in incident angle, which is rather convenient to manufacture facility.展开更多
A low-power 14-bit 150MS/s an- alog-to-digital converter （ADC） is present- ed for communication applications. Range scaling enables a maximal 2-Vp-p input with a single-stage opamp adopted. Opamp and capacitor shari...A low-power 14-bit 150MS/s an- alog-to-digital converter （ADC） is present- ed for communication applications. Range scaling enables a maximal 2-Vp-p input with a single-stage opamp adopted. Opamp and capacitor sharing between the first multi- plying digital-to-analog converter （MDAC） and the second one reduces the total opamp power further. The dedicated sample-and- hold amplifier （SHA） is removed to lower the power and the noise. The blind calibration of linearity errors is proposed to improve the per- formance. The prototype ADC is fabricated in a 130rim CMOS process with a 1.3-V supply voltage. The SNDR of the ADC is 71.3 dB with a 2.4 MHz input and remains 68.5 dB for a 120 MHz input. It consumes 85 roW, which includes 57 mW for the ADC core, 11 mW for the low jitter clock receiver and 17 mW for the high-speed reference buffer.展开更多
A novel topology low-voltage high precision current reference based on subthreshold Metal-Oxide-Semiconductor Field Effect Transistors （MOSFETs） is presented. The circuit achieves a temperature-independent reference...A novel topology low-voltage high precision current reference based on subthreshold Metal-Oxide-Semiconductor Field Effect Transistors （MOSFETs） is presented. The circuit achieves a temperature-independent reference current by a proper combination current of two first-order temperature-compensation current references, which exploit the temperature characteristics of integrated poly2 resistors and the 1- V transconductance characteristics of MOSFET operating in the subthreshold region. The circuit, designed with the 1 st silicon 0.35 μm standard CMOS logic process technology, exhibits a stable current of about 2.25 μA with much low temperature coefficient of 3 × 10^-4μA/℃ in the temperature range of-40-150 ℃ at 1 V supply voltage, and also achieves a better power supply rejection ratio （PSRR） over a broad frequency. The PSRR is about -78 dB at DC and remains -42 dB at the frequency higher than 10 MHz. The maximal process error is about 6,7% based on the Monte Carlo simulation. So it has good process compatibility.展开更多
文摘Submicron CMOS IC technology, including triple layer resist lithography technology, RIE, LDD, Titanium Salicide, shallow junction, thin gate oxide, no bird's beak isolation and channel's multiple implantation doping technology have been developed. 0.50μm. CMOS integrated circuits have been fabricated using this submicron CMOS process.
基金TheNationalHighTechnologyResearchandDevelopmentProgramofChina (863Program ) (No .2 0 0 2AA1Z160 0 )
文摘This paper presents the design and the experimental measurements of two complementary metal-oxide-semiconductor (CMOS) LC-tuned voltage controlled oscillators (VCO) implemented in a 0.18 μm 6-metal-layer mixed-signal/RF CMOS technology. The design methodologies and approaches for the optimization of the ICs are presented. The first design is optimized for mixed-signal transistor, oscillated at 2.64 GHz with a phase noise of -93.5 dBc/Hz at 500 kHz offset. The second one optimized for RF transistor, using the same architecture, oscillated at 2.61 GHz with a phase noise of -95.8 dBc/Hz at 500 kHz offset. Under a 2 V supply, the power dissipation is 8 mW, and the maximum buffered output power for mixed-signal and RF transistor are -7 dBm and -5.4 dBm, respectively. Both kinds of oscillators make use of on-chip components only, allowing for simple and robust integration.
文摘We propose a novel thermal-conscious power model for integrated circuits that can accurately predict power and temperature under voltage scaling. Experimental results show that the leakage power consumption is underestimated by 52 % if thermal effects are omitted. Furthermore, an inconsistency arises when energy and temperature are simultaneously optimized by dynamic voltage scaling. Temperature is a limiting factor for future integrated circuits,and the thermal optimization approach can attain a temperature reduction of up to 12℃ with less than 1.8% energy penalty compared with the energy optimization one.
文摘The folded-cascode structure is used to realize the low-voltage low-power consumption mixer, whose performance parameters have big influence on the navigation radio receiver＇s performance. Adopting the folded-cascode structure, the folded-cascode mixer （FCM） has a lower power supply voltage of 1.2 V and realizes the design trade-offs among the high transconductance, high linearity and low noise. The difficulties of realizing the trade-offs between the linearity and noise performance, the linearity and conversion gain, the conversion gain and noise performance are reduced. Fabricated in an radio frequency （RF） 0.18 μm CMOS process, the FCM has an active area of about 200 μm ×150 μm and consumes approximate 3.9 mW. The test results show that the FCM features a conversion gain （Gc） of some 14.5 dB, an input 1 dB compression point （Pin-1dB） of almost -13 dBm and a dual sideband （DSB） noise figure of around 12 dB. The FCM can be applied to the navigation radio receivers and electronic systems for aviation and aerospace or other related fields.
文摘The proposed DAC consists of a unit current-cell matrix for 8MSBs and a binary-weighted array for 4LSBs,trading-off between the precision,speed,and size of the chip.In order to ensure the linearity of the DAC,a double Centro symmetric current matrix is designed by the Q2 random walk strategy.To achieve better dynamic performance,a latch is added in front of the current switch to change the input signal,such as its optimal cross-point and voltage level.For a 12bit resolution,the converter reaches an update rate of 300MHz.
基金supported by the National Natural Science Foundation of China(No.61036002)the Natural Science Foundation of Tianjin(No.11JCZDJC15100)
文摘A novel superimposed photodetector （PD） is put forward. The photodetector can obtain a couple Of differential photocur- rent signals from one input optical signal. The light injection efficiency and the vertical work distance of this new.photode- tector are much higher than those of the others. The superimposed photodetctor is designed based on the standard 0.18 p.m CMOS process. The responsivity, bandwidth and transient response of the photodetector are simulated by a commercial simulation software of ATLAS. The responsivities of two obtained photocurrent signals are 0.035 A/W and 0.034 A/W, while the bandwidths are 3.8 GHz and 5.2 GHz, respectively. A full differential optical receiver which uses the superim- posed photodetector as input is simulated. The frequency response and 4 Gbit/s eye diagram of the optical receiver are also obtained. The results show that the two output signals can be used as the differential signal.
基金supported by the National Natural Science Foundation of China (No. 61474081)Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology (No. DH201513)
文摘A CMOS folding and interpolating analog-to-digital converter (ADC) for embedded application is described.The circuit is fully compatible with standard digital CMOS technology.A modified folding block implemented without resistor contributes to a small chip area.At the input stage,offset averaging reduces the input capacitance and the distributed track-and-hold circuits are proposed to improve signal-to-noise-plus-distortion ratio.The 200Ms/s 8bit ADC with 177mW total power consumption at 3.3V power supply is realized in standard digital 0.18μm 3.3V CMOS technology.
文摘Frequency synthesizer is an important part of optical and wireless communication system. Low power comsumption prescaler is one of the most critical unit of frequency synthesizer. For the frequency divider, it must be programmable for channel selection in multi-channel communication systems. A dual-modulus prescaler (DMP) is needed to provide variable division ratios. DMP is considered as a critical power dissipative block since it always operates at full speed. This paper introduces a high speed and low power complementary metal oxide semiconductor (CMOS) 15/16 DMP based on true single-phase-clock (TSPC) and transmission gates (TGs) cell. A conventional TSPC is optimized in terms of devices size, and it is resimulated. The TSPC is used in the synchronous and asynchronous counter. TGs are used in the control logic. The DMP circuit is implemented in 0.18 μm CMOS process. The simulation results are provided. The results show wide operating frequency range from 7.143 MHz to 4.76 GHz and it comsumes 3.625 mW under 1.8 V power supply voltage at 4.76 GHz.
文摘A 1.9GHz down-conversion CMOS mixer with a novel folded Gilbert cell,intended for use in GSM1900 （PCS1900） low-IF receivers,is fabricated in a RF 0.18μm CMOS process. The prototype demonstrates good performance at an intermediate frequency of 100kHz. It achieves a conversion gain of 6dB, SSB noise figure of 18. 5dB （1MHz IF） ,and IIP3 11.5dBm while consuming a 7mA current from a 3.3V power supply.
文摘With the increasing use of low voltage portable devices and wireless systems, energy harvesting has become an attractive approach to overcome the problems associated with battery life and power source. Among the different types of microenergy scavengers, the TEG （thermoelectric generators） are one of the most commonly used one. Unfortunately, due to the very small amount of voltage delivered by the TEG, an efficient DC/DC （direct current/direct current） conversion and power management techniques are needed. In this paper, a CMOS （complementary metal oxide semiconductor） fully-integrated DC/DC convener for energy harvesting applications is presented. The startup-voltage of the converter is about 140 mV, the output voltage exceeds 1.5 V, with a 20% power efficiency at least. The architecture for boosting such extremely low voltages is based on an ultra-low-voltage oscillator cross connected to two phase charge pump. The overall circuit does not require any external components and can be fully integrated in a standard CMOS low voltage technology. A test-chip has been designed in UMC （united microelectronics corporation） 180 nm CMOS process.
文摘This paper presents a 2GS/s 10bit CMOS digital-to-analog converter （DAC） that consists of two unit current-cell matrixes for 6MSBs and 4LSBs, respectively, trading off between the precision and size of the chip. Current mode logic （CML） is used to ensure high speed,and a double centro-symmetric current matrix is designed by the Q^2 random walk strategy in order to ensure the linearity of the DAC. The DAC occupies 2.2mm × 2.2mm of die area and consumes 790mW with a single 3.3V power supply.
文摘Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4(BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced,which only needs a few technology parameters.With this transistor intrinsic gain model,complementary metal-oxide-semiconductor(CMOS) operational amplifier(op amp) DC gain could be predicted.A two-stage folded cascode op amp is used as an example in this work.Non-minimum length device is used to improve the op amp DC gain.An improvement of 20 dB is proved when using doubled channel length design.Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain.After these,a full op amp DC gain scaling roadmap is proposed,from 130 nm technology node to 32 nm technology node.Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB.Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology.The prediction based on our simplified gain model agrees with SPICE simulation results.
文摘A low-power and high-speed 16:1 MUX IC designed for Optical fiber communication based on TSMC 0.25 μm CMOS technology is represented. A tree-type architecture was utilized. The output data bit rate is 2.5 Gb/s at input clock rate of 1.25 GHz. The simulation results show that the output signal has peak-to-peak amplitude of 400 mV, the power dissipation is less than 200 mW and the power dissipation of core circuit is less than 20 mW at the 2.5 Gb/s standard bit rate and supply voltage of 2.5 V. The chip area is （1.8） mm2.
基金The Key Science and Technology Project of Zhejiang Province(No.2007C21021)
文摘This paper proposes a new battery management system （BMS） based on a master-slave control mode for multi-cell li-ion battery packs. The proposed BMS can be applied in li-ion battery packs with any cell number. The whole system is composed of a master processor and a string of slave manager cells （SMCs）. Each battery cell corresponds to an SMC. Unlike the conventional BMS, the proposed one has a novel method for communication, and it collects the battery status information in a direct and simple way. An SMC communicates with its adjacent counterparts to transfer the battery information as well as the commands from the master processor. The nethermost SMC communicates with the master processor directly. This method allows the battery management chips to be implemented in a standard CMOS （ complementary metal-oxide-semiconductor transistor） process. A testing chip is fabricated in the CSMC 0.5 μm 5 V N-well CMOS process. The testing results verify that the proposed method for data communication and the battery management system can protect and manage multi-cell li-ion battery packs.
文摘A compact direct digital frequency synthesizer （DDFS） for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase to sine mapping data is compressed using sine symmetry technique, sine-phase difference technique, quad line approximation technique,and quantization and error read only memory （QE-ROM） technique. The ROM size is reduced by 98% using these techniques. A compact DDFS chip with 32bit phase storage depth and a 10bit on-chip digital to analog converter has been successfully implemented using a standard 0.35μm CMOS process. The core area of the DDFS is 1.6mm^2. It consumes 167mW at 3.3V,and its spurious free dynamic range is 61dB.
文摘An optimized design of the monolithic switched capacitor DC-DC converter is presented.The general topologic circuit and its basic operating principles are discussed theoretically.Circuit equivalent resistance regulation method is proposed as a feasible method to design the on-chip converters.N-channel MOSFETs,instead of Schottky diodes,are used as the diodes in the converters because of their processing compatibility in monolithic fabrication.One more manufacture step,however,is expected to adjust the threshold voltage of the MOSFETs for improving output characteristics of the converters.As an example,a step-up switched-capacitor converter is fabricated in a 2μm p-well double-poly single-metal CMOS technology with breakdown voltage of 15V.Test results indicate that a single sampling cell with 0.4mm 2 of die size can deliver energy up to 0.63mW at 5V output under the condition of 3V input.Efficiency of the tested sample is 68% at 9.8MHz switching frequency...
基金supported by the National Natural Science Foundation of China (No.60907003)
文摘A novel symmetrical chirped beam splitter based on a binary blazed grating is proposed, which adopts the fully-etched grating structure compatible with the current fabrication facilities for CMOS technology and convenient for integration and manufacture process. This structure can realize nearly equal-power splitting operation under the condition of TE polarization incidence. When the absolutely normal incidence occurs at the wavelength of 1580 nm, the coupling efficiencies of the left and the right branches are 43.627% and 43.753%, respectively. Moreover, this structure has the tolerances of 20 nm in etched depth and 3?in incident angle, which is rather convenient to manufacture facility.
基金supported by the Major National Science & Technology Program of China under Grant No.2012ZX03004004-002National High Technology Research and Development Program of China under Grant No. 2013AA014302
文摘A low-power 14-bit 150MS/s an- alog-to-digital converter （ADC） is present- ed for communication applications. Range scaling enables a maximal 2-Vp-p input with a single-stage opamp adopted. Opamp and capacitor sharing between the first multi- plying digital-to-analog converter （MDAC） and the second one reduces the total opamp power further. The dedicated sample-and- hold amplifier （SHA） is removed to lower the power and the noise. The blind calibration of linearity errors is proposed to improve the per- formance. The prototype ADC is fabricated in a 130rim CMOS process with a 1.3-V supply voltage. The SNDR of the ADC is 71.3 dB with a 2.4 MHz input and remains 68.5 dB for a 120 MHz input. It consumes 85 roW, which includes 57 mW for the ADC core, 11 mW for the low jitter clock receiver and 17 mW for the high-speed reference buffer.
文摘A novel topology low-voltage high precision current reference based on subthreshold Metal-Oxide-Semiconductor Field Effect Transistors （MOSFETs） is presented. The circuit achieves a temperature-independent reference current by a proper combination current of two first-order temperature-compensation current references, which exploit the temperature characteristics of integrated poly2 resistors and the 1- V transconductance characteristics of MOSFET operating in the subthreshold region. The circuit, designed with the 1 st silicon 0.35 μm standard CMOS logic process technology, exhibits a stable current of about 2.25 μA with much low temperature coefficient of 3 × 10^-4μA/℃ in the temperature range of-40-150 ℃ at 1 V supply voltage, and also achieves a better power supply rejection ratio （PSRR） over a broad frequency. The PSRR is about -78 dB at DC and remains -42 dB at the frequency higher than 10 MHz. The maximal process error is about 6,7% based on the Monte Carlo simulation. So it has good process compatibility.
