This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the Chi...This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.展开更多
This paper presents a resolution reconfigurable two-step successive approximation register analog-to-digital(A/D)converter(ADC)with the pseudo-multiple sampling(PMS)and gain error calibration method for CMOS image sen...This paper presents a resolution reconfigurable two-step successive approximation register analog-to-digital(A/D)converter(ADC)with the pseudo-multiple sampling(PMS)and gain error calibration method for CMOS image sensors.The proposed ADC can be configured with 10-bit,11-bit and 12-bit by adjusting the number of 10-bit A/D conversions,thereby satisfying various demands in different situations.The PMS method enables the attainment of high-resolution ADC results by summing the conversion outputs of several low-resolution ADCs,thereby reducing the number of unit capacitors and the area of the capacitor array.A compensation technique is proposed to expand the quantization range and improve the effective resolution of the proposed ADC.A calibration method suitable for bottom-plate sampling is proposed,which reduces the gain error between reference voltages.Simulated in a 55 nm process,the proposed ADC in the 12-bit mode achieves a differential nonlinearity of+0.47/-0.50 least significant bit(LSB)and an integral nonlinearity of+0.75/-0.84 LSB at a sampling frequency of 3.497×10^(5)per second with the calibration.The effective number of bits reaches 11.63 bits.The area occupied by a single ADC column is 39.5μm×119.2μm and the power consumption is 62.8μW.展开更多
This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process.Based on the plasma-wave theory proposed by Dya...This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process.Based on the plasma-wave theory proposed by Dyakonov and Shur,we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser(QCL).Furthermore,we present a fully integrated high-speed 32×32-pixel 3.0 THz CMOS image sensor(CIS).The full CIS measures 2.81×5.39 mm^(2) and achieves a 423 V/W responsivity(Rv)and a 5.3 nW integral noise equivalent power(NEP)at room temperature.In experiments,we demonstrate a testing speed reaching 319 fps under continuous-wave(CW)illumina-tion of a 3.0 THz QCL.The results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection.展开更多
The impact of the parasitic phenomenon on the performance of the analog accumulator in TDI CMOS image sensor is analyzed and resolved. A 128-stage optimized accumulator based on 0.18-μm one-poly four-metal 3.3 V CMOS...The impact of the parasitic phenomenon on the performance of the analog accumulator in TDI CMOS image sensor is analyzed and resolved. A 128-stage optimized accumulator based on 0.18-μm one-poly four-metal 3.3 V CMOS technology is designed and simulated. A charge injection effect from the top plate sampling is em- ployed to compensate the un-eliminated parasitics based on the accumulator with a decoupling switch, and then a calibration circuit is designed to restrain the mismatch and Process, Voltage and Temperature （PVT） variations. The post layout simulation indicates that the improved SNR of the accumulator upgrades from 17.835 to 21.067 dB, while an ideal value is 21.072 dB. In addition, the linearity of the accumulator is 99.62%. The simulation results of two extreme cases and Monte Carlo show that the mismatch and PVT variations are restrained by the calibration circuit. Furthermore, it is promising to design a higher stage accumulator based on the proposed structure.展开更多
基金supported by the Young Elite Scientists Sponsorship Program by CAST(No.YESS20210441)the National Natural Science Foundation of China(Nos.U2167208,11875223)。
文摘This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.
基金supported by Key Research Project of Jiangsu Province(No.BE2023019-3)Joint Project of Yangtze River Delta Community of Sci-Tech Innovation(No.2022CSJGG0402)。
文摘This paper presents a resolution reconfigurable two-step successive approximation register analog-to-digital(A/D)converter(ADC)with the pseudo-multiple sampling(PMS)and gain error calibration method for CMOS image sensors.The proposed ADC can be configured with 10-bit,11-bit and 12-bit by adjusting the number of 10-bit A/D conversions,thereby satisfying various demands in different situations.The PMS method enables the attainment of high-resolution ADC results by summing the conversion outputs of several low-resolution ADCs,thereby reducing the number of unit capacitors and the area of the capacitor array.A compensation technique is proposed to expand the quantization range and improve the effective resolution of the proposed ADC.A calibration method suitable for bottom-plate sampling is proposed,which reduces the gain error between reference voltages.Simulated in a 55 nm process,the proposed ADC in the 12-bit mode achieves a differential nonlinearity of+0.47/-0.50 least significant bit(LSB)and an integral nonlinearity of+0.75/-0.84 LSB at a sampling frequency of 3.497×10^(5)per second with the calibration.The effective number of bits reaches 11.63 bits.The area occupied by a single ADC column is 39.5μm×119.2μm and the power consumption is 62.8μW.
基金Project supported by the National Natural Science Foundation of China under Grant Nos.61874107,62075211.
文摘This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process.Based on the plasma-wave theory proposed by Dyakonov and Shur,we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser(QCL).Furthermore,we present a fully integrated high-speed 32×32-pixel 3.0 THz CMOS image sensor(CIS).The full CIS measures 2.81×5.39 mm^(2) and achieves a 423 V/W responsivity(Rv)and a 5.3 nW integral noise equivalent power(NEP)at room temperature.In experiments,we demonstrate a testing speed reaching 319 fps under continuous-wave(CW)illumina-tion of a 3.0 THz QCL.The results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection.
基金supported by the National Natural Science Foundation of China(Nos.61404090,61434004)
文摘The impact of the parasitic phenomenon on the performance of the analog accumulator in TDI CMOS image sensor is analyzed and resolved. A 128-stage optimized accumulator based on 0.18-μm one-poly four-metal 3.3 V CMOS technology is designed and simulated. A charge injection effect from the top plate sampling is em- ployed to compensate the un-eliminated parasitics based on the accumulator with a decoupling switch, and then a calibration circuit is designed to restrain the mismatch and Process, Voltage and Temperature （PVT） variations. The post layout simulation indicates that the improved SNR of the accumulator upgrades from 17.835 to 21.067 dB, while an ideal value is 21.072 dB. In addition, the linearity of the accumulator is 99.62%. The simulation results of two extreme cases and Monte Carlo show that the mismatch and PVT variations are restrained by the calibration circuit. Furthermore, it is promising to design a higher stage accumulator based on the proposed structure.
