为了减小氮化镓驱动电路高频工作时的损耗,针对共栅共源氮化镓高电子迁移率晶体管(Cascode GaN HEMT)提出一种高频谐振驱动电路,采用储能元件替代传统驱动电路中的耗能元件,电感电流为GaN器件栅极电容充/放电,有源密勒钳位电路抑制桥臂...为了减小氮化镓驱动电路高频工作时的损耗,针对共栅共源氮化镓高电子迁移率晶体管(Cascode GaN HEMT)提出一种高频谐振驱动电路,采用储能元件替代传统驱动电路中的耗能元件,电感电流为GaN器件栅极电容充/放电,有源密勒钳位电路抑制桥臂串扰。该文重点研究高频谐振驱动电路的工作模态,对电路损耗进行详细分析,给出电感取值的选取原则,并利用PSIM软件对电路进行仿真。最终搭建实验平台对电路的性能进行测试。结果表明,电感为电容充/放电提供低阻抗通路,能有效减小GaN器件驱动电路的电压振荡,明显降低驱动电路的损耗。仿真和实验同时证明了所提出的电路具有较好的性能。展开更多
This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process.Multiple bandwidth enhancement techniques,including input bonding wire,input series on-chip i...This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process.Multiple bandwidth enhancement techniques,including input bonding wire,input series on-chip inductive peak-ing and negative capacitance compensation,are adopted to overcome the large off-chip photodiode capacitive loading and the miller capacitance of the input device,achieving an overall bandwidth enhancement ratio of 8.5.The electrical measure-ment shows TIA achieves 58 dBΩup to 12.7 GHz with a 180-fF off-chip photodetector.The optical measurement demonstrates a clear open eye of 20 Gb/s.The TIA dissipates 4 mW from a 1.2-V supply voltage.展开更多
A differential cross-coupled regulated cascode(RGC)transimpedance amplifier(TIA)is proposed. The theory of multi-stage common-source(CS) configuration as an auxiliary amplifier to enhance the bandwidth and output impe...A differential cross-coupled regulated cascode(RGC)transimpedance amplifier(TIA)is proposed. The theory of multi-stage common-source(CS) configuration as an auxiliary amplifier to enhance the bandwidth and output impedance of RGC topology is analyzed. Additionally, negative Miller capacitance and shunt active inductor compensation are exploited to further expand the bandwidth. The proposed RGC TIA is simulated based on UMC 0.18 μm standard CMOS process. The simulation results demonstrate that the proposed TIA has a high transimpedance of 60.5 d B?, and a-3 d B bandwidth of 5.4 GHz is achieved for 0.5 p F input capacitance. The average equivalent input noise current spectral density is about 20 p A/Hz^(1/2) in the interested frequency, and the TIA consumes 20 m W DC power under 1.8 V supply voltage. The voltage swing is 460 m V pp, and the saturation input current is 500 μA.展开更多
Wide bandgap(WBG)semiconductors,such as silicon carbide(SiC)and gallium nitride(GaN),exhibit superior physical properties and demonstrate great potential for replacing conventional silicon(Si)semiconductors with WBG t...Wide bandgap(WBG)semiconductors,such as silicon carbide(SiC)and gallium nitride(GaN),exhibit superior physical properties and demonstrate great potential for replacing conventional silicon(Si)semiconductors with WBG technology,pushing the boundaries of power devices to handle higher blocking voltages,switching frequencies,output power levels,and operating temperatures.However,tradeoffs in switching performance and converter efficiency when substituting GaN devices for Si and SiC counterparts are not well-defined,especially in a cascode configuration.Additional research with further detailed investigation and analysis is necessitated for medium-voltage GaN devices in power converter applications.Therefore,the aim of this research is to experimentally investigate the impact of emerging 650/900 V cascode GaN devices on bidirectional dc-dc converters that are suitable for energy storage and distributed renewable energy systems.Dynamic characteristics of Si,SiC,and cascode GaN power devices are examined through the double-pulse test(DPT)circuit at different gate resistance values,device currents,and DC bus voltages.Furthermore,the switching behavior and energy loss as well as the rate of voltage and current changes over the time are studied and analyzed at various operating conditions.A 500 W experimental converter prototype is implemented to validate the benefits of cascode GaN devices on the converter operation and performance.Comprehensive analysis of the power losses and efficiency improvements for Si-based,SiC-based,and GaN-based converters are performed and evaluated as the switching frequency,working temperature,and output power level are in-creased.The experimental results reveal significant improvements in switching performance and energy efficiency from the emerging cascode GaN devices in the bidirectional converters.展开更多
This paper presents a cascode configuration synchronous rectifier device based on silicon MOSFET and Schottky diode,which can replace traditional power diode directly.This structure has self-driven ability with simple...This paper presents a cascode configuration synchronous rectifier device based on silicon MOSFET and Schottky diode,which can replace traditional power diode directly.This structure has self-driven ability with simple external circuit,and the conduction characteristic is preferable to a power diode.Static characterization and switching behavior analysis of proposed structure are conducted in this paper.The switching process is illustrated in detail using real model which considers the parasitic inductances and the nonlinearity of junction capacitors.The real time internal voltage and current value during switching transition are deduced with the equivalent circuit.To validate the analysis,two voltage specification rectifiers are built.Finally,double-pulse test results and the practical design example verify the performance advantages of proposed structure.展开更多
A 4.1 GHz two-stage cascode Low-Noise Amplifier(LNA) with Electro-Static Discharge(ESD) protection is presented in this paper.The LNA has been optimized using ESD and LNA co-design methodology to achieve a good perfor...A 4.1 GHz two-stage cascode Low-Noise Amplifier(LNA) with Electro-Static Discharge(ESD) protection is presented in this paper.The LNA has been optimized using ESD and LNA co-design methodology to achieve a good performance.Post-layout simulation results exhibit a forward gain(S21) of about 21 dB, a reverse isolation(S12) of less than-18 dB, an input return loss(S11) of less than-16 dB, and an output return loss(S22) of less than-17 dB.Moreover, the Noise Figure(NF) is 2.6 dB.This design is implemented in TSMC0.18μm RF CMOS technology and the die area is 0.9 mm×0.9 mm.展开更多
An s-domain analysis of the full dynamics of the pole-zero pair (frequency doublet) associated with the broadly used CMOS active-cascode gain-enhancement technique is presented. Quantitative results show that three sc...An s-domain analysis of the full dynamics of the pole-zero pair (frequency doublet) associated with the broadly used CMOS active-cascode gain-enhancement technique is presented. Quantitative results show that three scenarios can arise for the settling behavior of a closed-loop active-cascode operational amplifier depending on the relative locations of the unity-gain frequencies of the auxiliary and the main amplifiers. The analysis also reveals that, although theoretically possible, it is practically difficult to achieve an exact pole-zero cancellation. The analytical results presented here provide theoretical guidelines to the design of CMOS operational amplifiers using this technique.展开更多
This study investigated the irradiation effect of cascode-structure GaN HEMT(High Electron Mobility Transistor)devices,employing high-energy electrons with an energy of 10 MeV and irradiation doses ranging from 5 to 8...This study investigated the irradiation effect of cascode-structure GaN HEMT(High Electron Mobility Transistor)devices,employing high-energy electrons with an energy of 10 MeV and irradiation doses ranging from 5 to 80 Mrad(Si).The variation of electrical properties of the device under annealing condition was analyzed.Geant4 and TCAD simulations were used to analyze the irradiation effect and damage mechanisms.The results show that the threshold voltage has obvious negative drift and the drain current increases after irradiation.The threshold voltage deviation amplitude of the device increases with the increase of irradiation dose,and the maximum deviation is 1.41V.Annealing at high temperatures(80℃,120℃ and 145℃)partially restores the electrical properties,with a 0.49 V restoration in threshold voltage at 145℃.Geant4 simulations reveal that enhanced Si MOSFET is more susceptible to total dose effects.TCAD simulations of enhanced Si MOSFET devices demonstrate an increase in electric field intensity,trapped electron concentration,and hole concentration in Si and SiO_(2) layers with the increase of irradiation dose.These findings can provide support for the space application and irradiation hardening of cascode GaN HEMT devices.展开更多
A practical analytical model to calculate the switching loss of cascode gallium nitride high electron mobility transistors(GaN HEMTs)is proposed.To facilitate analysis and application,the transmission delays introduce...A practical analytical model to calculate the switching loss of cascode gallium nitride high electron mobility transistors(GaN HEMTs)is proposed.To facilitate analysis and application,the transmission delays introduced by Si MOSFET and interconnection inductances are ignored in modeling.Meanwhile,the nonlinear junction capacitances of the device and circuit stray inductances are also incorporated to increase the accuracy of the model.The turn-on and turn-off switching processes are described in detail and the simplified equations can be easily solved by using mathematical tools.Based on the analytical model,loss evaluation of totem-pole PFC converter is introduced briefly.Finally,the accuracy of the model is validated by comparing the calculated loss and converter’s efficiency with experiment results.Peak efficiency of 99.26%is achieved for a 3.6 kW single phase CCM Totem-Pole PFC AC/DC converter switching at 50 kHz based on 650 V cascode GaN HEMTs.展开更多
文摘为了减小氮化镓驱动电路高频工作时的损耗,针对共栅共源氮化镓高电子迁移率晶体管(Cascode GaN HEMT)提出一种高频谐振驱动电路,采用储能元件替代传统驱动电路中的耗能元件,电感电流为GaN器件栅极电容充/放电,有源密勒钳位电路抑制桥臂串扰。该文重点研究高频谐振驱动电路的工作模态,对电路损耗进行详细分析,给出电感取值的选取原则,并利用PSIM软件对电路进行仿真。最终搭建实验平台对电路的性能进行测试。结果表明,电感为电容充/放电提供低阻抗通路,能有效减小GaN器件驱动电路的电压振荡,明显降低驱动电路的损耗。仿真和实验同时证明了所提出的电路具有较好的性能。
基金supported in part by the National NaturalScience Foundation of China under Grant 62074074in part by Natural Science Foundation of Guangdong Province under Grant 2021A1515011266in part by the Science and Technology Plan of Shenzhen under Grants JCYJ20190809142017428 and JCYJ20200109141225025。
文摘This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process.Multiple bandwidth enhancement techniques,including input bonding wire,input series on-chip inductive peak-ing and negative capacitance compensation,are adopted to overcome the large off-chip photodiode capacitive loading and the miller capacitance of the input device,achieving an overall bandwidth enhancement ratio of 8.5.The electrical measure-ment shows TIA achieves 58 dBΩup to 12.7 GHz with a 180-fF off-chip photodetector.The optical measurement demonstrates a clear open eye of 20 Gb/s.The TIA dissipates 4 mW from a 1.2-V supply voltage.
基金Supported by the National Natural Science Foundation of China(No.61474081)
文摘A differential cross-coupled regulated cascode(RGC)transimpedance amplifier(TIA)is proposed. The theory of multi-stage common-source(CS) configuration as an auxiliary amplifier to enhance the bandwidth and output impedance of RGC topology is analyzed. Additionally, negative Miller capacitance and shunt active inductor compensation are exploited to further expand the bandwidth. The proposed RGC TIA is simulated based on UMC 0.18 μm standard CMOS process. The simulation results demonstrate that the proposed TIA has a high transimpedance of 60.5 d B?, and a-3 d B bandwidth of 5.4 GHz is achieved for 0.5 p F input capacitance. The average equivalent input noise current spectral density is about 20 p A/Hz^(1/2) in the interested frequency, and the TIA consumes 20 m W DC power under 1.8 V supply voltage. The voltage swing is 460 m V pp, and the saturation input current is 500 μA.
文摘Wide bandgap(WBG)semiconductors,such as silicon carbide(SiC)and gallium nitride(GaN),exhibit superior physical properties and demonstrate great potential for replacing conventional silicon(Si)semiconductors with WBG technology,pushing the boundaries of power devices to handle higher blocking voltages,switching frequencies,output power levels,and operating temperatures.However,tradeoffs in switching performance and converter efficiency when substituting GaN devices for Si and SiC counterparts are not well-defined,especially in a cascode configuration.Additional research with further detailed investigation and analysis is necessitated for medium-voltage GaN devices in power converter applications.Therefore,the aim of this research is to experimentally investigate the impact of emerging 650/900 V cascode GaN devices on bidirectional dc-dc converters that are suitable for energy storage and distributed renewable energy systems.Dynamic characteristics of Si,SiC,and cascode GaN power devices are examined through the double-pulse test(DPT)circuit at different gate resistance values,device currents,and DC bus voltages.Furthermore,the switching behavior and energy loss as well as the rate of voltage and current changes over the time are studied and analyzed at various operating conditions.A 500 W experimental converter prototype is implemented to validate the benefits of cascode GaN devices on the converter operation and performance.Comprehensive analysis of the power losses and efficiency improvements for Si-based,SiC-based,and GaN-based converters are performed and evaluated as the switching frequency,working temperature,and output power level are in-creased.The experimental results reveal significant improvements in switching performance and energy efficiency from the emerging cascode GaN devices in the bidirectional converters.
基金supported in part by the National Natural Science Foundation of China (No.51777093)
文摘This paper presents a cascode configuration synchronous rectifier device based on silicon MOSFET and Schottky diode,which can replace traditional power diode directly.This structure has self-driven ability with simple external circuit,and the conduction characteristic is preferable to a power diode.Static characterization and switching behavior analysis of proposed structure are conducted in this paper.The switching process is illustrated in detail using real model which considers the parasitic inductances and the nonlinearity of junction capacitors.The real time internal voltage and current value during switching transition are deduced with the equivalent circuit.To validate the analysis,two voltage specification rectifiers are built.Finally,double-pulse test results and the practical design example verify the performance advantages of proposed structure.
文摘A 4.1 GHz two-stage cascode Low-Noise Amplifier(LNA) with Electro-Static Discharge(ESD) protection is presented in this paper.The LNA has been optimized using ESD and LNA co-design methodology to achieve a good performance.Post-layout simulation results exhibit a forward gain(S21) of about 21 dB, a reverse isolation(S12) of less than-18 dB, an input return loss(S11) of less than-16 dB, and an output return loss(S22) of less than-17 dB.Moreover, the Noise Figure(NF) is 2.6 dB.This design is implemented in TSMC0.18μm RF CMOS technology and the die area is 0.9 mm×0.9 mm.
文摘An s-domain analysis of the full dynamics of the pole-zero pair (frequency doublet) associated with the broadly used CMOS active-cascode gain-enhancement technique is presented. Quantitative results show that three scenarios can arise for the settling behavior of a closed-loop active-cascode operational amplifier depending on the relative locations of the unity-gain frequencies of the auxiliary and the main amplifiers. The analysis also reveals that, although theoretically possible, it is practically difficult to achieve an exact pole-zero cancellation. The analytical results presented here provide theoretical guidelines to the design of CMOS operational amplifiers using this technique.
基金supported by the Grant of National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment,China(WDZC-HGD-2022-11)State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,China,and the Postgraduate Research and Practice Innovation Program of Jiangsu Province,China(No.SJCX23_1930)National Natural Science Foundation of China(NSFC)Youth Project“Study on the Generation and Evolutionary behavior of Proton Irradiation Defects in temperature-dependent CsPbBr3 quantum Dots”(Project No.:12305310).
文摘This study investigated the irradiation effect of cascode-structure GaN HEMT(High Electron Mobility Transistor)devices,employing high-energy electrons with an energy of 10 MeV and irradiation doses ranging from 5 to 80 Mrad(Si).The variation of electrical properties of the device under annealing condition was analyzed.Geant4 and TCAD simulations were used to analyze the irradiation effect and damage mechanisms.The results show that the threshold voltage has obvious negative drift and the drain current increases after irradiation.The threshold voltage deviation amplitude of the device increases with the increase of irradiation dose,and the maximum deviation is 1.41V.Annealing at high temperatures(80℃,120℃ and 145℃)partially restores the electrical properties,with a 0.49 V restoration in threshold voltage at 145℃.Geant4 simulations reveal that enhanced Si MOSFET is more susceptible to total dose effects.TCAD simulations of enhanced Si MOSFET devices demonstrate an increase in electric field intensity,trapped electron concentration,and hole concentration in Si and SiO_(2) layers with the increase of irradiation dose.These findings can provide support for the space application and irradiation hardening of cascode GaN HEMT devices.
基金Supported by National Key Research and Development Program of China(2016YFB0900400)National Natural Science Foundation of China(51777084),and Lite-On Research Program(HUST201501).
文摘A practical analytical model to calculate the switching loss of cascode gallium nitride high electron mobility transistors(GaN HEMTs)is proposed.To facilitate analysis and application,the transmission delays introduced by Si MOSFET and interconnection inductances are ignored in modeling.Meanwhile,the nonlinear junction capacitances of the device and circuit stray inductances are also incorporated to increase the accuracy of the model.The turn-on and turn-off switching processes are described in detail and the simplified equations can be easily solved by using mathematical tools.Based on the analytical model,loss evaluation of totem-pole PFC converter is introduced briefly.Finally,the accuracy of the model is validated by comparing the calculated loss and converter’s efficiency with experiment results.Peak efficiency of 99.26%is achieved for a 3.6 kW single phase CCM Totem-Pole PFC AC/DC converter switching at 50 kHz based on 650 V cascode GaN HEMTs.
