When the input signal has been interfered and glitches occur,the power consumption of Double-Edge Triggered Flip-Flops(DETFFs)will significantly increase.To effectively reduce the power consumption,this paper presents...When the input signal has been interfered and glitches occur,the power consumption of Double-Edge Triggered Flip-Flops(DETFFs)will significantly increase.To effectively reduce the power consumption,this paper presents an anti-interference low-power DETFF based on C-elements.The improved C-element is used in this DETFF,which effectively blocks the glitches in the input signal,prevents redundant transitions inside the DETFF,and reduces the charge and discharge frequencies of the transistor.The C-element has also added pull-up and pull-down paths,reducing its latency.Compared with other existing DETFFs,the DETFF proposed in this paper only flips once on the clock edge,which greatly reduces the redundant transitions caused by glitches and effectively reduces power consumption.This paper uses HSPICE to simulate the proposed DETFF and other 10 DETFFs.The findings show that compared with the other 10 types of DETFFs,the proposed DETFF has achieved large performance indexes in the total power consumption,total power consumption with glitches,delays,and power delay product.A detailed analysis of variance indicates that the proposed DETFF features less sensitivity to process,voltage,temperature,and Negative Bias Temperature Instability(NBTI)-induced aging variations.展开更多
This paper presents a radiation hardened flip-flop with an annular gate and a Muller C-element. The proposed cell has multiple working modes which can be used in different situations. Each part of the cell can be veri...This paper presents a radiation hardened flip-flop with an annular gate and a Muller C-element. The proposed cell has multiple working modes which can be used in different situations. Each part of the cell can be verified easily and completely by using different modes. This cell has been designed under an SMIC 0.13 μm process and 3-D simulated by using Synopsys TCAD. Heavy-ion testing has been done on the cell and its counterparts. The test results demonstrate that the presented cell reduces the cell＇s saturation cross section by approximately two orders of magnitude with little penalty on performance.展开更多
A radiation-hardened flip-flop is proposed to mitigate the single event upset （SEU） effect. Immunity was achieved through the use of C-elements and redundant storage elements. It takes advantage of the property of a...A radiation-hardened flip-flop is proposed to mitigate the single event upset （SEU） effect. Immunity was achieved through the use of C-elements and redundant storage elements. It takes advantage of the property of a C-element in which it enters a high impedance mode when its inputs are of different logic values. Redundant storage nodes are then used to drive the C-elements so that a single upset pulse in any storage will be prevented from altering the state of the output of the flip-flop. The flip-flop was implemented using 48 transistors and occupied an area of 30.78 μm2, using 65 nm CMOS process. It consumed 22.6% fewer transistors as compared to the traditional SEU resilient TMR flip-flop.展开更多
基金supported in part by the National Natural Science Foundation of China(Nos.61874156,61874157,61904001,and 61904047)。
文摘When the input signal has been interfered and glitches occur,the power consumption of Double-Edge Triggered Flip-Flops(DETFFs)will significantly increase.To effectively reduce the power consumption,this paper presents an anti-interference low-power DETFF based on C-elements.The improved C-element is used in this DETFF,which effectively blocks the glitches in the input signal,prevents redundant transitions inside the DETFF,and reduces the charge and discharge frequencies of the transistor.The C-element has also added pull-up and pull-down paths,reducing its latency.Compared with other existing DETFFs,the DETFF proposed in this paper only flips once on the clock edge,which greatly reduces the redundant transitions caused by glitches and effectively reduces power consumption.This paper uses HSPICE to simulate the proposed DETFF and other 10 DETFFs.The findings show that compared with the other 10 types of DETFFs,the proposed DETFF has achieved large performance indexes in the total power consumption,total power consumption with glitches,delays,and power delay product.A detailed analysis of variance indicates that the proposed DETFF features less sensitivity to process,voltage,temperature,and Negative Bias Temperature Instability(NBTI)-induced aging variations.
文摘This paper presents a radiation hardened flip-flop with an annular gate and a Muller C-element. The proposed cell has multiple working modes which can be used in different situations. Each part of the cell can be verified easily and completely by using different modes. This cell has been designed under an SMIC 0.13 μm process and 3-D simulated by using Synopsys TCAD. Heavy-ion testing has been done on the cell and its counterparts. The test results demonstrate that the presented cell reduces the cell＇s saturation cross section by approximately two orders of magnitude with little penalty on performance.
文摘A radiation-hardened flip-flop is proposed to mitigate the single event upset （SEU） effect. Immunity was achieved through the use of C-elements and redundant storage elements. It takes advantage of the property of a C-element in which it enters a high impedance mode when its inputs are of different logic values. Redundant storage nodes are then used to drive the C-elements so that a single upset pulse in any storage will be prevented from altering the state of the output of the flip-flop. The flip-flop was implemented using 48 transistors and occupied an area of 30.78 μm2, using 65 nm CMOS process. It consumed 22.6% fewer transistors as compared to the traditional SEU resilient TMR flip-flop.
