以碳纤维纱穿刺叠层铺放的缎纹碳布为纤维预制体,采用化学气相渗透法(Chemical Vapor Infiltration,CVI)结合先驱体浸渍裂解法(Precursor Infiltration and Pyrolysis,PIP)制备了细编穿刺C/C-SiC复合材料,在(3.2±0.32)MW/m^(2)氧-...以碳纤维纱穿刺叠层铺放的缎纹碳布为纤维预制体,采用化学气相渗透法(Chemical Vapor Infiltration,CVI)结合先驱体浸渍裂解法(Precursor Infiltration and Pyrolysis,PIP)制备了细编穿刺C/C-SiC复合材料,在(3.2±0.32)MW/m^(2)氧-乙炔焰作用下考核了C/C-SiC复合材料在碳布叠层和穿刺方向上的抗烧蚀性能,用扫描电子显微镜(Scanning Electron Microscope,SEM)对材料烧蚀表面及剖面的微观形貌进行表征与分析。结果表明:在60 s氧-乙炔焰考核后,C/C-SiC复合材料碳布叠层方向和穿刺方向的线烧蚀率分别为(1.67±0.23)μm/s和(2.39±0.22)μm/s,质量烧蚀率分别为(2.33±0.09)mg/s和(1.46±0.19)mg/s;当热流方向垂直于复合材料碳布叠层方向时,SiC基体氧化后生成的SiO2在碳纤维束及邻近基体表面形成较为连续的氧化膜,可有效阻挡高温热流对材料内部的进一步氧化烧蚀;当热流方向平行于复合材料碳布叠层方向时,穿刺纱中SiC分布较少,使得碳纤维在高温有氧环境下发生显著烧蚀,诱发穿刺纱端部出现明显氧化烧蚀凹坑;基体SiC分布方式和复合材料微结构特征是细编穿刺C/C-SiC复合材料在不同方向上表现出抗烧蚀性能差异的主要因素。展开更多
To improve the compactness and properties of C/C-SiC-ZrC composites produced by precursor infiltration and pyrolysis(PIP)method,the low-temperature reactive melt infiltration(RMI)process was used to seal the composite...To improve the compactness and properties of C/C-SiC-ZrC composites produced by precursor infiltration and pyrolysis(PIP)method,the low-temperature reactive melt infiltration(RMI)process was used to seal the composites using Zr_(2)Cu as the filler.The microstructure,mechanical properties,and ablation properties of the Zr_(2)Cu packed composites were analyzed.Results show that during Zr_(2)Cu impregnation,the melt efficiently fills the large pores of the composites and is converted to ZrCu due to a partial reaction of zirconium with carbon.This results in an increase in composite density from 1.91 g/cm^(3)to 2.24 g/cm^(3)and a reduction in open porosity by 27.35%.Additionally,the flexural strength of Zr_(2)Cu packed C/C-SiC-ZrC composites is improved from 122.78±8.09 MPa to 135.53±5.40 MPa.After plasma ablation for 20 s,the modified composites demonstrate superior ablative resistance compared to PIP C/C-SiC-ZrC,with mass ablation and linear ablation rates of 2.77×10^(−3)g/s and 2.60×10^(−3)mm/s,respectively.The“selftranspiration”effect of the low-melting point copper-containing phase absorbs the heat of the plasma flame,further reducing the ablation temperature and promoting the formation of refined ZrO_(2)particles within the SiO_(2)melting layer.This provides more stable erosion protection for Zr_(2)Cu packed C/C-SiC-ZrC composites.展开更多
Silicon carbide offers distinct advantages in the field of power electronic devices.However,manufacturing processes remain a significant barrier to its widespread adoption.Polycrystalline SiC is less expensive and eas...Silicon carbide offers distinct advantages in the field of power electronic devices.However,manufacturing processes remain a significant barrier to its widespread adoption.Polycrystalline SiC is less expensive and easier to produce than single crystal.But stabilizing and controlling its performance are critical challenges that must be addressed urgently.Due to its material properties and excellent performance in applications,3C-SiC is gaining increasing attention in research.This article presents the electrical and material properties of a series of polycrystalline 3C-SiC samples and investigates their interrelationship.The samples were examined using TEM,which confirmed their polycrystalline structure.Combined with XRD and Raman spectroscopy,the grain orientations within the samples were analyzed,and the presence of stress was verified.EBSD was employed to statistically examine the grain structure and size across samples.For samples with similar doping levels,grain size is the most influential factor in determining electrical characteristics.Further EBSD measurements reveal the relationship between resistivity and grain size as log(ρ)=-1.93+8.67/d.These findings provide a foundation for the quantitative control and application of polycrystalline 3C-SiC.This work offers theoretical evidence for optimizing the performance tuning of 3C-SiC ceramics and enhancing their effectiveness in electronic applications.展开更多
文摘以碳纤维纱穿刺叠层铺放的缎纹碳布为纤维预制体,采用化学气相渗透法(Chemical Vapor Infiltration,CVI)结合先驱体浸渍裂解法(Precursor Infiltration and Pyrolysis,PIP)制备了细编穿刺C/C-SiC复合材料,在(3.2±0.32)MW/m^(2)氧-乙炔焰作用下考核了C/C-SiC复合材料在碳布叠层和穿刺方向上的抗烧蚀性能,用扫描电子显微镜(Scanning Electron Microscope,SEM)对材料烧蚀表面及剖面的微观形貌进行表征与分析。结果表明:在60 s氧-乙炔焰考核后,C/C-SiC复合材料碳布叠层方向和穿刺方向的线烧蚀率分别为(1.67±0.23)μm/s和(2.39±0.22)μm/s,质量烧蚀率分别为(2.33±0.09)mg/s和(1.46±0.19)mg/s;当热流方向垂直于复合材料碳布叠层方向时,SiC基体氧化后生成的SiO2在碳纤维束及邻近基体表面形成较为连续的氧化膜,可有效阻挡高温热流对材料内部的进一步氧化烧蚀;当热流方向平行于复合材料碳布叠层方向时,穿刺纱中SiC分布较少,使得碳纤维在高温有氧环境下发生显著烧蚀,诱发穿刺纱端部出现明显氧化烧蚀凹坑;基体SiC分布方式和复合材料微结构特征是细编穿刺C/C-SiC复合材料在不同方向上表现出抗烧蚀性能差异的主要因素。
基金Open Fund of Zhijian Laboratory,Rocket Force University of Engineering(2024-ZJSYS-KF02-09)National Natural Science Foundation of China(51902028,52272034)+1 种基金Key Research and Development Program of Shaanxi(2023JBGS-15)Fundamental Research Funds for the Central Universities(Changan University,300102313202,300102312406)。
文摘To improve the compactness and properties of C/C-SiC-ZrC composites produced by precursor infiltration and pyrolysis(PIP)method,the low-temperature reactive melt infiltration(RMI)process was used to seal the composites using Zr_(2)Cu as the filler.The microstructure,mechanical properties,and ablation properties of the Zr_(2)Cu packed composites were analyzed.Results show that during Zr_(2)Cu impregnation,the melt efficiently fills the large pores of the composites and is converted to ZrCu due to a partial reaction of zirconium with carbon.This results in an increase in composite density from 1.91 g/cm^(3)to 2.24 g/cm^(3)and a reduction in open porosity by 27.35%.Additionally,the flexural strength of Zr_(2)Cu packed C/C-SiC-ZrC composites is improved from 122.78±8.09 MPa to 135.53±5.40 MPa.After plasma ablation for 20 s,the modified composites demonstrate superior ablative resistance compared to PIP C/C-SiC-ZrC,with mass ablation and linear ablation rates of 2.77×10^(−3)g/s and 2.60×10^(−3)mm/s,respectively.The“selftranspiration”effect of the low-melting point copper-containing phase absorbs the heat of the plasma flame,further reducing the ablation temperature and promoting the formation of refined ZrO_(2)particles within the SiO_(2)melting layer.This provides more stable erosion protection for Zr_(2)Cu packed C/C-SiC-ZrC composites.
基金supported in part by the Major Science and Technology Innovation Project of Shandong Province under Grant 2022CXGC010103Taishan Scholars Program of Shandong Province under Grant tstp20231210。
文摘Silicon carbide offers distinct advantages in the field of power electronic devices.However,manufacturing processes remain a significant barrier to its widespread adoption.Polycrystalline SiC is less expensive and easier to produce than single crystal.But stabilizing and controlling its performance are critical challenges that must be addressed urgently.Due to its material properties and excellent performance in applications,3C-SiC is gaining increasing attention in research.This article presents the electrical and material properties of a series of polycrystalline 3C-SiC samples and investigates their interrelationship.The samples were examined using TEM,which confirmed their polycrystalline structure.Combined with XRD and Raman spectroscopy,the grain orientations within the samples were analyzed,and the presence of stress was verified.EBSD was employed to statistically examine the grain structure and size across samples.For samples with similar doping levels,grain size is the most influential factor in determining electrical characteristics.Further EBSD measurements reveal the relationship between resistivity and grain size as log(ρ)=-1.93+8.67/d.These findings provide a foundation for the quantitative control and application of polycrystalline 3C-SiC.This work offers theoretical evidence for optimizing the performance tuning of 3C-SiC ceramics and enhancing their effectiveness in electronic applications.
