We present a systematic investigation of calculating quantum dots （QDs） energy levels using finite element method in the frame of eight-band k · p method. Numerical results including piezoelectricity, electron ...We present a systematic investigation of calculating quantum dots （QDs） energy levels using finite element method in the frame of eight-band k · p method. Numerical results including piezoelectricity, electron and hole levels, as well as wave functions are achieved. In the calculation of energy levels, we do observe spurious solutions （SSs） no matter Burt Foreman or symmetrized Hamiltonians are used. Different theories are used to analyse the SSs, we find that the ellipticity theory can give a better explanation for the origin of SSs and symmetrized Hamiltonian is easier to lead to SSs. The energy levels simulated with the two Hamiltonians are compared to each other after eliminating SSs, different Hamiltonians cause a larger difference on electron energy levels than that on hole energy levels and this difference decreases with the increase of QD size.展开更多
In this paper, we present an investigation of type-II ＇W＇ quantum wells for the InAs/Ga1-xInxSb/A1Sb family, where ＇W＇ denotes the conduction profile of the material. We focus our attention on using the eight-band...In this paper, we present an investigation of type-II ＇W＇ quantum wells for the InAs/Ga1-xInxSb/A1Sb family, where ＇W＇ denotes the conduction profile of the material. We focus our attention on using the eight-band k. p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period--A1Sb/InAs/Ga1-xInxSb/InAs/A1Sb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Cal_xInxSb layer and the alloy composition in Ga1-xInxSb separately. In the last part, in order to compare the eight-band k·p model, we recalculate the conduction bands of the ＇W＇ structure using the one-band k·p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.展开更多
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2006AA03Z401)'One-Hundred Talents Program' of the Chinese Academy of Sciences,and the National Natural Science Foundation of China (Grant No.60876033)
文摘We present a systematic investigation of calculating quantum dots （QDs） energy levels using finite element method in the frame of eight-band k · p method. Numerical results including piezoelectricity, electron and hole levels, as well as wave functions are achieved. In the calculation of energy levels, we do observe spurious solutions （SSs） no matter Burt Foreman or symmetrized Hamiltonians are used. Different theories are used to analyse the SSs, we find that the ellipticity theory can give a better explanation for the origin of SSs and symmetrized Hamiltonian is easier to lead to SSs. The energy levels simulated with the two Hamiltonians are compared to each other after eliminating SSs, different Hamiltonians cause a larger difference on electron energy levels than that on hole energy levels and this difference decreases with the increase of QD size.
基金supported by the National Natural Science Foundation of China (Grant No. 60636030)
文摘In this paper, we present an investigation of type-II ＇W＇ quantum wells for the InAs/Ga1-xInxSb/A1Sb family, where ＇W＇ denotes the conduction profile of the material. We focus our attention on using the eight-band k. p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period--A1Sb/InAs/Ga1-xInxSb/InAs/A1Sb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Cal_xInxSb layer and the alloy composition in Ga1-xInxSb separately. In the last part, in order to compare the eight-band k·p model, we recalculate the conduction bands of the ＇W＇ structure using the one-band k·p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.
