A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate a...A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer,so as to reduce the system defects.At the same time,the influence of different interface structures of Al In Sb on the surface morphology of buffer layer is explored.The propagation mechanism of defects with the growth of buffer layer is compared and analyzed.The relationship between the quality of In Sb thin films and the structure of buffer layer is summarized.Finally,the growth of high quality In Sb thin films is realized.展开更多
Values of the second thermodynamic dissociation constant pK2 of the protonated form of monosodium 1,4-piperazinediethanesulfonate (PIPES) have been determined at twelve different temperatures in the temperature range ...Values of the second thermodynamic dissociation constant pK2 of the protonated form of monosodium 1,4-piperazinediethanesulfonate (PIPES) have been determined at twelve different temperatures in the temperature range from (278.15 to 328.15) K including the body temperature 310.15 K by measurement of the electromotive-force for cells without liquid junction of the type: Pt (s), H2 (g), 101.325 kPa|Na-PIPES (m1) + Na 2-PIPES (m2) + NaCl (m3)|AgCl (s), Ag (s), where m1, m2 and m3 indicate the molalities of the corresponding species at 1 atm = 101.325 kPa in SI units. The pK2 values for the dissociation of Na-PIPES are represented by the equation: pK2 = -1303.76/T + 48.369 - 6.46889 lnT with an uncertainty of ± 0.001. The values of pK2 for Na-PIPES were found to be 7.1399 ± 0.0004 at 298.15 K and 7.0512 ± 0.0004 at 310.15 K, respectively, and indicate that this buffer would be useful as pH standard in the range of physiological application. Standard thermodynamic quantities for the acidic dissociation process of Na-PIPES have been derived from the temperature coefficients of the pK2. These values are compared with those of structurally related N-substituted PIPERAZINE and TAURINE at 298.15 K.展开更多
Volatile organic compounds(VOCs)are difficult to be eliminated safely and effectively because of their large concentration fluctuations.Thus,maintaining a stable concentration of VOCs is a significant study.In this re...Volatile organic compounds(VOCs)are difficult to be eliminated safely and effectively because of their large concentration fluctuations.Thus,maintaining a stable concentration of VOCs is a significant study.In this research,H2O,Tween-80,[Emim]BF4,[Emim]PF6,and[Hnmp]HSO4 were applied to absorb and desorb simulated VOCs.The ionic liquid[Emim]BF4 demonstrated the best performance and was thus selected for further experiments.As the ionic liquid acted as a buffer,the toluene concentration with a fluctuation of 2000–20000 mg·m-3 was stabilized at 6000–12000 mg·m-3.Heating distillation(90°C)was highly efficient to recover[Emim]BF4 from toluene.The regenerated[Emim]BF4 could retain its initial absorption capacity even after multiple cycles.Moreover,[Emim]BF4 had the same buffer function on various aromatic hydrocarbons.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774130,11474248,61790581,and 51973070)the Ph.D.Program Foundation of the Ministry of Education of China(Grant No.20105303120002)the National Key Technology Research and Development Program of China(Grant No.2018YFA0209101)。
文摘A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer,so as to reduce the system defects.At the same time,the influence of different interface structures of Al In Sb on the surface morphology of buffer layer is explored.The propagation mechanism of defects with the growth of buffer layer is compared and analyzed.The relationship between the quality of In Sb thin films and the structure of buffer layer is summarized.Finally,the growth of high quality In Sb thin films is realized.
文摘Values of the second thermodynamic dissociation constant pK2 of the protonated form of monosodium 1,4-piperazinediethanesulfonate (PIPES) have been determined at twelve different temperatures in the temperature range from (278.15 to 328.15) K including the body temperature 310.15 K by measurement of the electromotive-force for cells without liquid junction of the type: Pt (s), H2 (g), 101.325 kPa|Na-PIPES (m1) + Na 2-PIPES (m2) + NaCl (m3)|AgCl (s), Ag (s), where m1, m2 and m3 indicate the molalities of the corresponding species at 1 atm = 101.325 kPa in SI units. The pK2 values for the dissociation of Na-PIPES are represented by the equation: pK2 = -1303.76/T + 48.369 - 6.46889 lnT with an uncertainty of ± 0.001. The values of pK2 for Na-PIPES were found to be 7.1399 ± 0.0004 at 298.15 K and 7.0512 ± 0.0004 at 310.15 K, respectively, and indicate that this buffer would be useful as pH standard in the range of physiological application. Standard thermodynamic quantities for the acidic dissociation process of Na-PIPES have been derived from the temperature coefficients of the pK2. These values are compared with those of structurally related N-substituted PIPERAZINE and TAURINE at 298.15 K.
基金Supported by the Zhejiang University Students Science and Technology Innovation Activity Plan Funding(No.2018R403078).
文摘Volatile organic compounds(VOCs)are difficult to be eliminated safely and effectively because of their large concentration fluctuations.Thus,maintaining a stable concentration of VOCs is a significant study.In this research,H2O,Tween-80,[Emim]BF4,[Emim]PF6,and[Hnmp]HSO4 were applied to absorb and desorb simulated VOCs.The ionic liquid[Emim]BF4 demonstrated the best performance and was thus selected for further experiments.As the ionic liquid acted as a buffer,the toluene concentration with a fluctuation of 2000–20000 mg·m-3 was stabilized at 6000–12000 mg·m-3.Heating distillation(90°C)was highly efficient to recover[Emim]BF4 from toluene.The regenerated[Emim]BF4 could retain its initial absorption capacity even after multiple cycles.Moreover,[Emim]BF4 had the same buffer function on various aromatic hydrocarbons.