A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated chara...A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.展开更多
Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunne...Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunneling diodes(FTDs)with tunneling distances of 10 and 5 nm are fabricated,which demonstrate remarkable characteristics,including ultrahigh asymmetry(1.6×10^(4)for 10 nm device and 1.6×10^(3) for 5 nm device),high responsivity(25.3 V^(-1) for 10 nm device and 28.3 V^(-1) for 5 nm device)at zero bias,surpassing the thermal voltage limit of conventional Schottky diodes,and low turn-on voltage(V_(on))of approximately 100 mV for both devices,making them ideal for power conversion applications.Using technology computer-aided design(TCAD)simulations,the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling(FNT)and trap-assisted tunneling(TAT)under different biasing conditions,as illustrated by the corresponding energy band profiles.Furthermore,by integrating the FTDs,a rectifier bridge circuit is designed and exhibits full-wave rectification behavior,validated through SPICE simulations for THz-band operations.This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.展开更多
This paper demonstrated a monolithically integrated 200 nm-ultrathin amorphous-Ga_(2)O_(3)vertical SBD-based bridge rectifier and its hybrid buck conversion system with a Si-MOSFET.The fabricated vertical Ga_(2)O_(3)S...This paper demonstrated a monolithically integrated 200 nm-ultrathin amorphous-Ga_(2)O_(3)vertical SBD-based bridge rectifier and its hybrid buck conversion system with a Si-MOSFET.The fabricated vertical Ga_(2)O_(3)SBD exhibits excellent characteristics and a high breakdown electric field strength of 1.35 MV/cm.The bridge rectifier circuit maintains stable operation at high frequencies of 50 kHz.And the hybrid buck system composed of the Ga_(2)O_(3)bridge rectifier and Si-MOSFET achieves adjustable step-down voltage output under the conditions of a 20 kHz switching frequency of Si-MOSFET and 50 Hz Vin.This work validates the practical value of Ga_(2)O_(3)rectifiers in high-frequency conversion systems.展开更多
This paper first discusses the operating principle of instantaneous reactive power theory. Then, the theory is introduced into shunt active power filter and its control scheme is studied. Finally, Matlab/Simulink powe...This paper first discusses the operating principle of instantaneous reactive power theory. Then, the theory is introduced into shunt active power filter and its control scheme is studied. Finally, Matlab/Simulink power system toolbox is used to simulate the system. In the simulation model, as the most common harmonic source, 3-phase thyristor bridge rectifier circuit is constructed. The simulation results before and after the shunt active filter was switched to the system corresponding to different firing angles of the thyristors are presented and analyzed, which demonstrate the practicability and reliability of the proposed shunt active filter scheme.展开更多
基金supported by Natural Science Basic Research Program of Shaanxi Province of China(Grant No.2023JCYB574)National Natural Science Foundation of China(Grant No.62204203)。
文摘A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.
基金National Key Research and Development Program of China(2024YFA1410700,2021YFA1200700)National Natural Science Foundation of China(62474065,T2222025,62174053)+3 种基金Natural Science Foundation of Chongqing(CSTB2024NSCQ-JQX0005)Shanghai Science and Technology Innovation Action Plan(24QA2702300,24YF2710400)National Postdoctoral Program(GZB20240225)Fundamental Research Funds for the Central Universities。
文摘Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunneling diodes(FTDs)with tunneling distances of 10 and 5 nm are fabricated,which demonstrate remarkable characteristics,including ultrahigh asymmetry(1.6×10^(4)for 10 nm device and 1.6×10^(3) for 5 nm device),high responsivity(25.3 V^(-1) for 10 nm device and 28.3 V^(-1) for 5 nm device)at zero bias,surpassing the thermal voltage limit of conventional Schottky diodes,and low turn-on voltage(V_(on))of approximately 100 mV for both devices,making them ideal for power conversion applications.Using technology computer-aided design(TCAD)simulations,the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling(FNT)and trap-assisted tunneling(TAT)under different biasing conditions,as illustrated by the corresponding energy band profiles.Furthermore,by integrating the FTDs,a rectifier bridge circuit is designed and exhibits full-wave rectification behavior,validated through SPICE simulations for THz-band operations.This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.
基金supported by Natural Science Basic Research Program of Shaanxi Province of China(Grant No.2023JCYB574)National Natural Science Foundation of China(Grant No.62304178)。
文摘This paper demonstrated a monolithically integrated 200 nm-ultrathin amorphous-Ga_(2)O_(3)vertical SBD-based bridge rectifier and its hybrid buck conversion system with a Si-MOSFET.The fabricated vertical Ga_(2)O_(3)SBD exhibits excellent characteristics and a high breakdown electric field strength of 1.35 MV/cm.The bridge rectifier circuit maintains stable operation at high frequencies of 50 kHz.And the hybrid buck system composed of the Ga_(2)O_(3)bridge rectifier and Si-MOSFET achieves adjustable step-down voltage output under the conditions of a 20 kHz switching frequency of Si-MOSFET and 50 Hz Vin.This work validates the practical value of Ga_(2)O_(3)rectifiers in high-frequency conversion systems.
文摘This paper first discusses the operating principle of instantaneous reactive power theory. Then, the theory is introduced into shunt active power filter and its control scheme is studied. Finally, Matlab/Simulink power system toolbox is used to simulate the system. In the simulation model, as the most common harmonic source, 3-phase thyristor bridge rectifier circuit is constructed. The simulation results before and after the shunt active filter was switched to the system corresponding to different firing angles of the thyristors are presented and analyzed, which demonstrate the practicability and reliability of the proposed shunt active filter scheme.
