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High-Efficiency Bottom-Emitting Organic Light-Emitting Diodes with Double Aluminum as Electrodes
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作者 张宏梅 王丹蓓 +2 位作者 吴远武 方达 黄维 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第10期154-158,共5页
Bottom-emitting organic light-emitting diodes (BOLEDs), using AI/MoO3 as the semitransparent anode and LiF/Al as the reflective cathode and Alqa as the emitter, are fabricated. At the same time, the performance impr... Bottom-emitting organic light-emitting diodes (BOLEDs), using AI/MoO3 as the semitransparent anode and LiF/Al as the reflective cathode and Alqa as the emitter, are fabricated. At the same time, the performance improvement of the BOLEDs having a capping layer inserted between the semitransparent anode and the glass substrate is studied. The optimized microcavity BOLED shows a current efficiency (5.49cd/A) enhancement of 10% compared with a conventional BOLED based on ITO (5.0cd/A). Slight color variation is observed in 120° forward viewing angle with 5Onto BCP as the capping layer. Strong dependence of efficiency on A1 anode thickness and the thickness and refractor index of the capping layer is explained. The results indicate that the BOLEDs with the double-aluminum electrode have potential practical applications. 展开更多
关键词 OLEDs Al High-Efficiency bottom-emitting Organic Light-Emitting Diodes with Double Aluminum as Electrodes BCP
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Large Aperture Low Threshold Current 980nm VCSELs Fabricated with Pulsed Anodic Oxidation
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作者 CUI Jin-jiang1,2, NING Yong-qiang1, LI Te1,2, LIU Guang-yu1,2, ZHANG Yan1,2,PENG Biao1,2, SUN Yan-fang1,2, WANG Li-jun1 (1. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China 2. Graduate School of Chinese Academy of Sciences, Beijing, 100039, China) 《光机电信息》 2007年第12期36-40,共5页
Pulsed anodic oxidation technique, a new way of forming current blocking layers, was successfully used in ridge-waveguide QW laser fabrication. This method was applied in 980 nm VCSELs fabrication to form a high-quali... Pulsed anodic oxidation technique, a new way of forming current blocking layers, was successfully used in ridge-waveguide QW laser fabrication. This method was applied in 980 nm VCSELs fabrication to form a high-quality native oxide current blocking layer, which simplifies the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500 μm diameter device has a current threshold as low as 0.48 W. The maximum CW operation output power at room temperature is 1.48 W. The lateral divergence angle θ‖ and vertical divergence angle θ⊥ are as low as 15.3° and 13.8° without side-lobes at a current of 6 A. 展开更多
关键词 VCSELS bottom-emitting PAO blocking layer low threshold native oxide SELF-ALIGNED MESA quantum well
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